公开(公告)号：US11912724B2

公开(公告)日：2024-02-27

申请号：US17592075

申请日：2022-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyun Kwon ,  Sangdong Kim ,  Hyungjun Kim ,  Virendra Kumar Rai ,  Bumwoo Park ,  Myungsun Sim ,  Jeoungin Yi ,  Yongsuk Cho ,  Byoungki Choi ,  Jongwon Choi

IPC: C07F15/00

CPC classification number: C07F15/0033

Abstract: An organometallic compound represented by Formula 1:

M1(Ln1)n1(Ln2)n2  Formula 1

wherein M1 is a transition metal, Ln1 is a ligand represented by Formula 1-1, Ln2 is a bidentate ligand, n1 is 1, 2, or 3, and n2 is 0, 1, or 2,







wherein X1, X2, X11 to X14, Y1, R10, R20, ring CY2, b10, and b20 are as defined herein, and wherein * and *′ each indicate a binding site to M1.

公开(公告)号：US11858829B2

公开(公告)日：2024-01-02

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung Jo ,  Chan Kwak ,  Hyungjun Kim ,  Euncheol Do ,  Hyeoncheol Park ,  Changsoo Lee

IPC: C01G33/00 ,  C01G31/00 ,  C01G35/00 ,  C04B35/645 ,  H01L49/02 ,  C04B35/626 ,  H10B12/00

CPC classification number: C01G33/006 ,  C04B35/6261 ,  C04B35/62695 ,  C04B35/645 ,  H01L28/40 ,  H10B12/37 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2006/10 ,  C01P2006/40

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

公开(公告)号：US11824081B2

公开(公告)日：2023-11-21

申请号：US17209762

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Changsoo Lee ,  Sangwoon Lee ,  Chan Kwak ,  Hyungjun Kim ,  Euncheol Do

IPC: H01L49/02 ,  H01L27/108 ,  C04B35/057 ,  C04B35/01 ,  C04B35/64 ,  C04B35/495 ,  H10B12/00

CPC classification number: H01L28/55 ,  C04B35/01 ,  C04B35/057 ,  C04B35/495 ,  C04B35/64 ,  H10B12/038 ,  H10B12/37

Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.

A2-xB3-yO10-z  

In Formula 1, A, B, x, y, and z are disclosed in the specification.

公开(公告)号：US11763989B2

公开(公告)日：2023-09-19

申请号：US17038904

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

Inventor： Hyungjun Kim ,  Taniguchi Takaaki ,  Sasaki Takayoshi ,  Osada Minoru ,  Chan Kwak ,  Youngnam Kwon ,  Changsoo Lee

IPC: H01G4/12 ,  H01G4/005 ,  H01L49/02

CPC classification number: H01G4/1209 ,  H01G4/005 ,  H01L28/56

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen.

A2Bn−3CnO3n+1  



wherein, in Formula 1, A is a divalent element,
B is a monovalent element,
C is a pentavalent element, and
n is a number from 3 to 8.

公开(公告)号：US11739262B2

公开(公告)日：2023-08-29

申请号：US17108310

申请日：2020-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwon Chung ,  Hyungjun Kim ,  Byunghwa Seo ,  YongChul Kim

IPC: H01L51/50 ,  C09K11/66 ,  H10K85/10 ,  H10K85/60 ,  H10K50/15 ,  H10K50/16

CPC classification number: C09K11/665 ,  H10K85/151 ,  H10K85/633 ,  H10K85/654 ,  H10K85/655 ,  H10K50/15 ,  H10K50/16

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.

公开(公告)号：US20230253447A1

公开(公告)日：2023-08-10

申请号：US18147289

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsun Kim ,  Boeun Park ,  Cheolhyun An ,  Hyungjun Kim ,  Younggeun Park ,  Jeongil Bang

IPC: H01L21/02

CPC classification number: H01L28/87 ,  H01L28/56 ,  H01L28/75

Abstract: A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is formed on the dielectric layer. The forming a dielectric layer includes forming a first dielectric layer having a single-crystal perovskite structure on the first electrode, and forming a second dielectric layer on the first dielectric layer. An upper surface of the first dielectric layer adjacent to the second dielectric layer has a greater surface roughness than an upper surface of the second dielectric layer adjacent to the second electrode.

公开(公告)号：US20230209856A1

公开(公告)日：2023-06-29

申请号：US18145084

申请日：2022-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungyeon Kwak ,  Byungjoon Kang ,  Hyungjun Kim ,  Myungsun Sim ,  Kum Hee Lee ,  Sunghun Lee ,  Yong Joo Lee ,  Byoungki Choi ,  Youngki Hong

IPC: H10K50/125 ,  H10K85/30

CPC classification number: H10K50/125 ,  H10K85/346 ,  H10K85/342 ,  H10K2101/40

Abstract: A light-emitting device and an electronic apparatus including the same are disclosed. The light-emitting device, includes: a first electrode; a second electrode facing the first electrode; and an interlayer arranged between the first electrode and the second electrode, wherein the interlayer includes a first emission layer and a second emission layer, the first emission layer includes a first compound that emits a first light having a first spectrum, the second emission layer includes a second compound that emits a second light having a second spectrum, the first compound includes a first transition metal, the second compound includes a second transition metal, the first transition metal and the second transition metal are different from each other, |HOMO(1)−HOMO(2)| is about 0.05 eV to about 0.4 eV, and |λmax(1)−λmax(2)| is about 0 nm to about 30 nm, wherein HOMO(1), HOMO(2), λmax(1), and λmax(2) are as described herein.

公开(公告)号：US20230112032A1

公开(公告)日：2023-04-13

申请号：US17836434

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungsun Sim ,  Seungyeon Kwak ,  Sungmin Kim ,  Hyungjun Kim ,  Banglin Lee ,  Sunghun Lee ,  Yong Joo Lee ,  Byoungki Choi

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: A composition including a first compound and a second compound, wherein the first compound is an organometallic compound represented by Formula 1, the second compound is an organometallic compound represented by Formula 2, the first compound and the second compound are different from each other, the first compound and the second compound are each not tris[2-phenylpyridine]iridium, and |λP(Ir1)-λP(Ir2)| is in a range of 0 nm to about 30 nm, and at least one of Expressions 1 to 4 presented in the specification is satisfied, Ir(L11)n11(L12)n12(L13)n13  Formula 1 Ir(L21)n21(L22)n22(L23)n23  Formula 2 wherein L11 to L13, L21 to L23, n11 to n13, and n21 to n23 are as provided herein.

公开(公告)号：US11515363B2

公开(公告)日：2022-11-29

申请号：US17194372

申请日：2021-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungyeon Kwak ,  Byungjoon Kang ,  Hyungjun Kim ,  Myungsun Sim ,  Kum Hee Lee ,  Banglin Lee ,  Sunghun Lee ,  Byoungki Choi ,  Kyuyoung Hwang

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/00

Abstract: A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial wavelength of the incident green light (Δλ) may be 3.6 or greater and 13 or less.

公开(公告)号：US20220185834A1

公开(公告)日：2022-06-16

申请号：US17552573

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyun Kwon ,  Virendra Kumar RAI ,  Bumwoo Park ,  Sangdong Kim ,  Hyungjun Kim ,  Myungsun Sim ,  Byoungki Choi

IPC: C07F15/00 ,  H01L51/00

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)n2   Formula 1 wherein Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 0, 1, or 2, n2 is 1, 2, or 3, provided that the sum of n1 and n2 is at least 3, wherein CY1, CY2, CY3, R10, R20, R30, X1, X2, Y1 to Y8, and b10 to b30 are as described herein, and wherein * and *′ each indicate a binding site to M1.