公开(公告)号：JPS53105116A

公开(公告)日：1978-09-13

申请号：JP1947577

申请日：1977-02-24

Applicant: SONY CORP

Inventor： KOMURO SHIGEO ,  HASHIMOTO TAKEO ,  KANOU YASUO ,  YAMAZAKI HIROSHI ,  ANDOU TETSUO

IPC: H01L27/148 ,  H01L31/00 ,  H04N5/30 ,  H04N5/335 ,  H04N5/341 ,  H04N5/3725

Abstract: PURPOSE:To improve the transfer efficiency by making photo detection regions for long-wavelength light and short-wavelength light equal with the image part constituted specially in the frame transfer system.

公开(公告)号：JPS5369517A

公开(公告)日：1978-06-21

申请号：JP14586976

申请日：1976-12-03

Applicant: SONY CORP

Inventor： KANOU YASUO ,  OCHI NARIYUKI

IPC: H01L27/148 ,  H01L31/00 ,  H04N5/30 ,  H04N5/335 ,  H04N5/369 ,  H04N5/3728

Abstract: PURPOSE:The thickness of the insulating layer of a transfer gate region is made equal to that of the insulating layer of a gate region in the same process, and the surface potential of the transfer gate region is made equal to that of the gate region, thereby improving its reliability.