公开(公告)号：US10746611B2

公开(公告)日：2020-08-18

申请号：US15835048

申请日：2017-12-07

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee

IPC: G01L1/12 ,  G01B7/24 ,  H01L41/12

Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient λ that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% Δ R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.

公开(公告)号：US10374004B2

公开(公告)日：2019-08-06

申请号：US16257410

申请日：2019-01-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won Lee ,  William David French ,  Keith Ryan Green

IPC: H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  H01L43/04

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

公开(公告)号：US10365123B2

公开(公告)日：2019-07-30

申请号：US15656749

申请日：2017-07-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won Lee ,  Erika Lynn Mazotti ,  William David French

IPC: G01D5/16 ,  G01D5/14 ,  G01R33/09

Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.

公开(公告)号：US20190164934A1

公开(公告)日：2019-05-30

申请号：US16264733

申请日：2019-02-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won Lee ,  William D. French ,  Ann Gabrys

IPC: H01L25/065 ,  H01L23/00 ,  H01F17/00 ,  H01L23/522

Abstract: An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.

公开(公告)号：US20190157342A1

公开(公告)日：2019-05-23

申请号：US16257410

申请日：2019-01-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won Lee ,  William David French ,  Keith Ryan Green

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06

CPC classification number: H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

公开(公告)号：US20180130849A1

公开(公告)日：2018-05-10

申请号：US15865825

申请日：2018-01-09

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  William David French ,  Keith Ryan Green

IPC: H01L27/22 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04

CPC classification number: H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

公开(公告)号：US20180096784A1

公开(公告)日：2018-04-05

申请号：US15832884

申请日：2017-12-06

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  Sudtida Lavangkul ,  Erika Lynn Mazotti ,  William David French

IPC: H01F27/34 ,  G01R33/00 ,  H01F27/24 ,  H01L43/12 ,  H01L23/522 ,  H01L23/528 ,  G01R33/04 ,  H01F27/28

CPC classification number: H01F27/346 ,  G01R33/0029 ,  G01R33/04 ,  H01F27/24 ,  H01F27/28 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

公开(公告)号：US20170299661A1

公开(公告)日：2017-10-19

申请号：US15099561

申请日：2016-04-14

Applicant: Texas Instruments Incorporated

Inventor： Iouri N. Mirgorodski ,  Roozbeh Parsa ,  William French ,  Dok Won Lee ,  Ann Gabrys

IPC: G01R33/00 ,  H05K1/02 ,  H05K3/06

CPC classification number: G01R33/0005 ,  G01R33/0052 ,  H05K1/0296 ,  H05K1/0306 ,  H05K3/064 ,  H05K2201/083

Abstract: A magnetic sensor has a circuit segment with a quadrupole region. The quadrupole region includes a supply line, a first return line and a second return line, all in a conductor layer. The first supply line is laterally adjacent to the supply line on a first side, and the second return line is laterally adjacent to the supply line on a second, opposite side. A space between the supply line and the first return line is free of the conductor layer; similarly, a space between the supply line and the second return line is free of the conductor layer. The first return line and the second return line are electrically coupled to the supply line at a terminus of the circuit segment.

公开(公告)号：US20150340422A1

公开(公告)日：2015-11-26

申请号：US14286562

申请日：2014-05-23

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  William D. French ,  Andrei Papou

IPC: H01L49/02 ,  H01F27/28 ,  H01L25/10 ,  H01L23/522 ,  H01L23/00

CPC classification number: H01L28/10 ,  H01F17/0033 ,  H01F27/2804 ,  H01F2027/2809 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L25/105 ,  H01L2224/0345 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2224/1705 ,  H01L2224/30505 ,  H01L2224/80031 ,  H01L2224/80862 ,  H01L2225/1011 ,  H01L2924/01029 ,  H01L2924/06 ,  H01L2924/364 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method of manufacturing an inductor on a wafer level process that can operate at 20 MHz with good efficiency and a high inductance density is disclosed, wherein the inductor design allows high frequency operation, low RDSON values and high efficiency.

Abstract translation: 公开了一种在能够以20MHz以高效率和高电感密度工作的晶片级工艺上制造电感器的方法，其中电感器设计允许高频操作，低RDSON值和高效率。

公开(公告)号：US20240319234A1

公开(公告)日：2024-09-26

申请号：US18737108

申请日：2024-06-07

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  Jo Bito ,  Keith Ryan Green

IPC: G01R15/20 ,  H01L23/495 ,  H10B61/00 ,  H10N52/00 ,  H10N52/80 ,  H10N59/00

CPC classification number: G01R15/207 ,  G01R15/202 ,  H01L23/49586 ,  H10N52/00 ,  H10N52/80 ,  H10B61/00 ,  H10N59/00

Abstract: In one example, a device comprises a lead frame, a semiconductor die, a spacer, and a magnetic concentrator. The lead frame comprises a conductor. The spacer is between the semiconductor die and the conductor. The magnetic concentrator overlaps at least partially with the conductor.