Thin film, photo-mask blank, and method and apparatus for film deposition thereof
    31.
    发明专利
    Thin film, photo-mask blank, and method and apparatus for film deposition thereof 有权
    薄膜,照片遮罩及其膜沉积的方法和装置

    公开(公告)号:JP2010215946A

    公开(公告)日:2010-09-30

    申请号:JP2009061844

    申请日:2009-03-13

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus reducing defects in film deposition in a thin film to be used in a semi-conductor device, a display device, a photo mask or the like. SOLUTION: In a magnetron sputtering film deposition method for producing a thin film by which the film deposition is performed by masking a part of a target, the mask includes an area where the re-adhesion (deposition) amount on the target is larger than the sputtering amount of the target, and includes an area where the sputtering amount of the target is comparable with the re-adhesion (deposition) amount on the target. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种薄膜沉积方法和薄膜沉积设备,以减少半导体器件,显示器件,照相掩模等中使用的薄膜中的膜沉积缺陷。 解决方案:在用于制造薄膜的磁控溅射膜沉积方法中,通过掩模目标的一部分进行成膜,掩模包括靶上的再附着(沉积)量为 大于靶的溅射量,并且包括靶的溅射量与靶上的再附着(沉积)量相当的区域。 版权所有(C)2010,JPO&INPIT

    Reflective photomask blank, reflective photomask, inspection device for reflective photomask, and method of inspecting the same
    32.
    发明专利
    Reflective photomask blank, reflective photomask, inspection device for reflective photomask, and method of inspecting the same 有权
    反射型光电隔离膜,反射型光电检测器,反射型光电检测装置及其检测方法

    公开(公告)号:JP2010181457A

    公开(公告)日:2010-08-19

    申请号:JP2009022593

    申请日:2009-02-03

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide: a reflective photomask blank in which the accuracy of pattern inspection on a reflective photomask is improved and the time required for the inspection can be reduced; a reflective photomask; an inspection device for a reflective photomask; and a method of inspecting the mask. SOLUTION: The reflective photomask includes: a substrate; a reflective film reflecting exposure light emitted to the substrate; an absorber absorbing the exposure light, the absorber being formed by patterning on the reflective film; and a polarizer formed by patterning on the absorber. The inspection device includes an analyzer. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供:反射光掩模坯料,其中提高了反射光掩模上的图案检查的精度,并且可以减少检查所需的时间; 反光光掩模 用于反射光掩模的检查装置; 以及检查面罩的方法。 反射光掩模包括:基板; 反射发射到衬底的曝光光的反射膜; 吸收吸收曝光光的吸收体,所述吸收体通过在所述反射膜上图案化而形成; 以及通过在吸收体上图案化形成的偏振片。 检查装置包括分析器。 版权所有(C)2010,JPO&INPIT

    Reflective mask blank and reflective mask
    33.
    发明专利
    Reflective mask blank and reflective mask 审中-公开
    反光面罩和反光面膜

    公开(公告)号:JP2009088166A

    公开(公告)日:2009-04-23

    申请号:JP2007254688

    申请日:2007-09-28

    Abstract: PROBLEM TO BE SOLVED: To provide a reflective mask blank comprising at least a substrate, a multilayer reflecting film for reflecting exposure light, and an absorber for absorbing the exposure light, the absorber having a smaller film thickness for preventing the degradation of resolution around a pattern during exposure, and to provide a reflective mask. SOLUTION: In the reflective mask blank, the absorber contains at least In, Ga, and Zn elements, or at least In, Ga, Sn, and O elements. The absorber has a sheet resistance value of at least ≤1 MΩ/sq. and is non-polycrystal. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:为了提供一种至少包括基板的反射掩模坯料,用于反射曝光光的多层反射膜和用于吸收曝光光的吸收体,具有较小膜厚度的吸收体以防止劣化 在曝光期间围绕图案的分辨率,并提供反射掩模。 解决方案:在反射掩模板中,吸收体至少包含In,Ga和Zn元素,或至少包含In,Ga,Sn和O元素。 该吸收体具有至少≤1MΩ/ sq的薄层电阻值。 并且是非多晶体。 版权所有(C)2009,JPO&INPIT

    Method of depositing oxide thin film
    34.
    发明专利
    Method of depositing oxide thin film 审中-公开
    沉积氧化物薄膜的方法

    公开(公告)号:JP2007123701A

    公开(公告)日:2007-05-17

    申请号:JP2005316404

    申请日:2005-10-31

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To suppress variations in quality among products at the minimum by depositing a film while always keeping oxygen partial pressure in a chamber constant, irrespective of the releasing rate of a gas containing oxygen atoms to be released from an object to be deposited that is introduced into the chamber.
    SOLUTION: When the oxide thin film is formed in a gas atmosphere containing oxygen on the object to be deposited releasing a gas while it is left in a vacuum, the films is formed while controlling an oxygen flow rate to be introduced into the chamber by monitoring the light-emitting strength of oxygen in plasma so that an oxygen proportion in the chamber in which the released gas component contains oxygen atoms can be a certain set value. Thus, the above problem is solved.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:通过沉积薄膜同时始终保持室内的氧分压恒定来抑制产品之间质量的变化,而与包含要从物体中释放的氧原子的气体的释放速率无关 被沉积,被引入腔室。 解决方案:当氧化物薄膜在待沉积物体上的含氧气体气氛中形成时,将其放置在真空中时释放气体,形成膜,同时控制将氧气流速引入到 通过监测等离子体中的氧的发光强度,使得释放的气体组分含有氧原子的室中的氧气比例可以是一定的设定值。 因此,解决了上述问题。 版权所有(C)2007,JPO&INPIT

    Thin-film transistor and method of manufacturing same
    35.
    发明专利
    Thin-film transistor and method of manufacturing same 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:JP2007123698A

    公开(公告)日:2007-05-17

    申请号:JP2005316393

    申请日:2005-10-31

    Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor in which an amorphous oxide semiconductor thin film containing no In and having small environmental load is deposited as an active layer, and to provide a method of manufacturing the same.
    SOLUTION: Using a target made of ZnGa2O4 or SnGa2O5, a thin film made of any one of ZnGa2Ox (3≤x≤4) or SnGa2Ox (4≤x≤5) is deposited on a flexible board at a room temperature by a sputtering method, thereby forming the active layer of the thin-film transistor which contains no In. Thus, the problem is solved.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 解决的问题:提供一种薄膜晶体管,其中沉积不含In并具有小环境负荷的非晶氧化物半导体薄膜作为活性层,并提供其制造方法。 解决方案:使用由ZnGa 2 O 4或SnGa 2 O 5制成的靶,将由ZnGa 2 O x(3≤x≤4)或SnGa 2 O x(4≤x≤5)中的任一种制成的薄膜在室温下在柔性基板上沉积 溅射法,从而形成不含In的薄膜晶体管的有源层。 因此,问题得到解决。 版权所有(C)2007,JPO&INPIT

    Transistor and its manufacturing method
    36.
    发明专利
    Transistor and its manufacturing method 审中-公开
    晶体管及其制造方法

    公开(公告)号:JP2007109918A

    公开(公告)日:2007-04-26

    申请号:JP2005299678

    申请日:2005-10-14

    Abstract: PROBLEM TO BE SOLVED: To provide a transistor whose manufacturing process is simplified and reduced in cost but which is provided with excellent ON/OFF characteristics, mobility and conductivity under a low-off current low in interface ranking, by employing the same material for the formation of a semiconductor active layer and a gate insulating film.
    SOLUTION: Upon manufacturing the gate insulating film and the semiconductor layer by the same spatter target, the flow rate of oxygen in spatter gas is controlled whereby the semiconductor layer having a conductivity of not less than 1×10
    -10 S/cm and not more than 1×10
    -2 S/cm, and the gate insulating film having the conductivity of not more than 10
    -11 S/cm, can be formed in the same vacuum tank while evacuation upon forming the semiconductor layer and the gate insulating film can be carried out by one time whereby the transistor can be manufactured at a low cost.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:为了提供一种简化制造工艺并降低成本但是在接口级别低的低关断电流下具有优异的ON / OFF特性,迁移率和导电性的晶体管,通过使用它们 用于形成半导体有源层和栅极绝缘膜的材料。 解决方案:在通过相同的溅射靶制造栅极绝缘膜和半导体层时,控制溅射气体中的氧气的流量,由此导电率不小于1×10 -10的半导体层 S / cm且不大于1×10 -2 S / cm,并且导电率不大于10 / cm,可以在形成半导体层的同时在相同的真空槽中形成,并且栅极绝缘膜可以进行一次,从而可以以低成本制造晶体管。 版权所有(C)2007,JPO&INPIT

    Charged particle beam forming material and method for forming charged particle beam using the same
    37.
    发明专利
    Charged particle beam forming material and method for forming charged particle beam using the same 审中-公开
    带有粒子束形成材料的方法和使用其的带电粒子束的方法

    公开(公告)号:JP2007027360A

    公开(公告)日:2007-02-01

    申请号:JP2005206627

    申请日:2005-07-15

    Abstract: PROBLEM TO BE SOLVED: To provide a conductive charged particle beam forming material having improved edge roughness of a pattern, and also to provide a method to form charged particle beam using the same material. SOLUTION: The charged particle beam forming material 100 is constituted by forming a conductive film layer 41 of the amorphous structure on the front surface of the charged particle beam forming material 30, wherein a through-hole 32 is formed to a thin film (membrane) 31a joined to a supporting frame 11a via a joining layer 21a. Moreover, the charged particle beam forming material 300 is constituted by forming the conductive film layer 41 of the amorphous structure on the front surface, side surface and rear surface of the charged particle beam forming material 40, where an aperture 33 is formed to the thin film (membrane) 31a joined to the supporting frame 11a via a silicon oxide 21a. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供具有改进的图案的边缘粗糙度的导电带电粒子束形成材料,并且还提供使用相同材料形成带电粒子束的方法。 解决方案:带电粒子束形成材料100通过在带电粒子束形成材料30的前表面上形成无定形结构的导电膜层41而形成,其中通孔32形成为薄膜 (膜)31a通过接合层21a接合到支撑框架11a。 此外,带电粒子束形成材料300通过在带电粒子束形成材料40的前表​​面,侧表面和后表面上形成无定形结构的导电膜层41而构成,其中孔33形成为薄的 通过氧化硅21a与支撑框架11a接合的膜(膜)31a。 版权所有(C)2007,JPO&INPIT

    Stencil mask, blank therefor, and manufacturing method therefor
    38.
    发明专利
    Stencil mask, blank therefor, and manufacturing method therefor 审中-公开
    STENCIL MASK,BLANK THEREFOR及其制造方法

    公开(公告)号:JP2006245225A

    公开(公告)日:2006-09-14

    申请号:JP2005057786

    申请日:2005-03-02

    Abstract: PROBLEM TO BE SOLVED: To provide a stencil mask and a mask blank therefor by which the stencil mask with appropriate pattern position accuracy can be obtained without curving or peeling of a thin film, and to provide a method for manufacturing them. SOLUTION: The mask blank for a stencil mask has a double-layer structure and is provided with a supporting substrate and a silicon thin film supported by the supporting substrate, and the stress of the silicon thin film is adjusted at ≥0 MPa and ≤100 MPa. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:为了提供一种模板掩模和掩模坯料,通过该模板掩模和掩模坯料,可以获得具有适当图案位置精度的模版掩模而不会使薄膜弯曲或剥离,并提供其制造方法。 解决方案:用于模板掩模的掩模坯料具有双层结构,并且设置有支撑基板和由支撑基板支撑的硅薄膜,并且将硅薄膜的应力调节至≥0MPa ≤100MPa。 版权所有(C)2006,JPO&NCIPI

    Film deposition apparatus
    39.
    发明专利
    Film deposition apparatus 审中-公开
    胶片沉积装置

    公开(公告)号:JP2012201900A

    公开(公告)日:2012-10-22

    申请号:JP2011064922

    申请日:2011-03-23

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a multilayered film, wherein the size of the entire apparatus can be reduced.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a deposition treatment drum at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multilayered film can be readily deposited by rotating a rotary drum equipped with a film deposition source in the deposition treatment drum.

    Abstract translation: 要解决的问题:提供一种能够沉积多层膜的成膜装置,其中可以减少整个装置的尺寸。 解决方案:成膜装置被构造成将薄膜沉积在待处理的基板的内表面上,同时以规定的角度绕着基板周围的沉积处理滚筒,并连续或间歇地转印基板,使得尺寸 的整个装置。 通过在沉积处理滚筒中旋转装有成膜源的旋转滚筒,可以容易地沉积多层薄膜。 版权所有(C)2013,JPO&INPIT

    Rotary drum in film deposition apparatus for atomic layer chemical vapor deposition and film deposition apparatus for atomic layer chemical vapor deposition
    40.
    发明专利
    Rotary drum in film deposition apparatus for atomic layer chemical vapor deposition and film deposition apparatus for atomic layer chemical vapor deposition 有权
    用于原子层化学蒸气沉积的薄膜沉积装置中的旋转喷枪和用于原子层化学蒸气沉积的膜沉积装置

    公开(公告)号:JP2012201899A

    公开(公告)日:2012-10-22

    申请号:JP2011064921

    申请日:2011-03-23

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide a rotary drum in a film deposition apparatus for an atomic layer chemical vapor deposition, which is capable of depositing a multi-layered film, wherein the size of the entire apparatus can be reduced, and to provide the film deposition apparatus for the atomic layer chemical vapor deposition.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a deposition treatment drum 100 at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multi-layered film can be readily deposited by rotating the rotary drum equipped with a film deposition source in the deposition treatment drum.

    Abstract translation: 解决的问题:为了提供能够沉积多层膜的原子层化学气相沉积的成膜装置中的旋转鼓,其中整个装置的尺寸可以减小,并且 提供原子层化学气相沉积的成膜装置。 解决方案:成膜装置被构造成将薄膜沉积在待处理的基板的内表面上,同时以规定的角度将基板卷绕在沉积处理滚筒100周围,并连续地或间歇地传送基板,使得 整个装置的尺寸减小。 通过在沉积处理滚筒中旋转装有成膜源的旋转滚筒,可以容易地沉积多层膜。 版权所有(C)2013,JPO&INPIT

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