Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus reducing defects in film deposition in a thin film to be used in a semi-conductor device, a display device, a photo mask or the like. SOLUTION: In a magnetron sputtering film deposition method for producing a thin film by which the film deposition is performed by masking a part of a target, the mask includes an area where the re-adhesion (deposition) amount on the target is larger than the sputtering amount of the target, and includes an area where the sputtering amount of the target is comparable with the re-adhesion (deposition) amount on the target. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide: a reflective photomask blank in which the accuracy of pattern inspection on a reflective photomask is improved and the time required for the inspection can be reduced; a reflective photomask; an inspection device for a reflective photomask; and a method of inspecting the mask. SOLUTION: The reflective photomask includes: a substrate; a reflective film reflecting exposure light emitted to the substrate; an absorber absorbing the exposure light, the absorber being formed by patterning on the reflective film; and a polarizer formed by patterning on the absorber. The inspection device includes an analyzer. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a reflective mask blank comprising at least a substrate, a multilayer reflecting film for reflecting exposure light, and an absorber for absorbing the exposure light, the absorber having a smaller film thickness for preventing the degradation of resolution around a pattern during exposure, and to provide a reflective mask. SOLUTION: In the reflective mask blank, the absorber contains at least In, Ga, and Zn elements, or at least In, Ga, Sn, and O elements. The absorber has a sheet resistance value of at least ≤1 MΩ/sq. and is non-polycrystal. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To suppress variations in quality among products at the minimum by depositing a film while always keeping oxygen partial pressure in a chamber constant, irrespective of the releasing rate of a gas containing oxygen atoms to be released from an object to be deposited that is introduced into the chamber. SOLUTION: When the oxide thin film is formed in a gas atmosphere containing oxygen on the object to be deposited releasing a gas while it is left in a vacuum, the films is formed while controlling an oxygen flow rate to be introduced into the chamber by monitoring the light-emitting strength of oxygen in plasma so that an oxygen proportion in the chamber in which the released gas component contains oxygen atoms can be a certain set value. Thus, the above problem is solved. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a thin-film transistor in which an amorphous oxide semiconductor thin film containing no In and having small environmental load is deposited as an active layer, and to provide a method of manufacturing the same. SOLUTION: Using a target made of ZnGa2O4 or SnGa2O5, a thin film made of any one of ZnGa2Ox (3≤x≤4) or SnGa2Ox (4≤x≤5) is deposited on a flexible board at a room temperature by a sputtering method, thereby forming the active layer of the thin-film transistor which contains no In. Thus, the problem is solved. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation:解决的问题:提供一种薄膜晶体管,其中沉积不含In并具有小环境负荷的非晶氧化物半导体薄膜作为活性层,并提供其制造方法。 解决方案:使用由ZnGa 2 O 4或SnGa 2 O 5制成的靶,将由ZnGa 2 O x(3≤x≤4)或SnGa 2 O x(4≤x≤5)中的任一种制成的薄膜在室温下在柔性基板上沉积 溅射法,从而形成不含In的薄膜晶体管的有源层。 因此,问题得到解决。 版权所有(C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a transistor whose manufacturing process is simplified and reduced in cost but which is provided with excellent ON/OFF characteristics, mobility and conductivity under a low-off current low in interface ranking, by employing the same material for the formation of a semiconductor active layer and a gate insulating film. SOLUTION: Upon manufacturing the gate insulating film and the semiconductor layer by the same spatter target, the flow rate of oxygen in spatter gas is controlled whereby the semiconductor layer having a conductivity of not less than 1×10 -10 S/cm and not more than 1×10 -2 S/cm, and the gate insulating film having the conductivity of not more than 10 -11 S/cm, can be formed in the same vacuum tank while evacuation upon forming the semiconductor layer and the gate insulating film can be carried out by one time whereby the transistor can be manufactured at a low cost. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation:要解决的问题:为了提供一种简化制造工艺并降低成本但是在接口级别低的低关断电流下具有优异的ON / OFF特性,迁移率和导电性的晶体管,通过使用它们 用于形成半导体有源层和栅极绝缘膜的材料。 解决方案:在通过相同的溅射靶制造栅极绝缘膜和半导体层时,控制溅射气体中的氧气的流量,由此导电率不小于1×10 -10的半导体层 SP> S / cm且不大于1×10 -2 SP> S / cm,并且导电率不大于10 SP> / cm,可以在形成半导体层的同时在相同的真空槽中形成,并且栅极绝缘膜可以进行一次,从而可以以低成本制造晶体管。 版权所有(C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a conductive charged particle beam forming material having improved edge roughness of a pattern, and also to provide a method to form charged particle beam using the same material. SOLUTION: The charged particle beam forming material 100 is constituted by forming a conductive film layer 41 of the amorphous structure on the front surface of the charged particle beam forming material 30, wherein a through-hole 32 is formed to a thin film (membrane) 31a joined to a supporting frame 11a via a joining layer 21a. Moreover, the charged particle beam forming material 300 is constituted by forming the conductive film layer 41 of the amorphous structure on the front surface, side surface and rear surface of the charged particle beam forming material 40, where an aperture 33 is formed to the thin film (membrane) 31a joined to the supporting frame 11a via a silicon oxide 21a. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a stencil mask and a mask blank therefor by which the stencil mask with appropriate pattern position accuracy can be obtained without curving or peeling of a thin film, and to provide a method for manufacturing them. SOLUTION: The mask blank for a stencil mask has a double-layer structure and is provided with a supporting substrate and a silicon thin film supported by the supporting substrate, and the stress of the silicon thin film is adjusted at ≥0 MPa and ≤100 MPa. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a multilayered film, wherein the size of the entire apparatus can be reduced.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a deposition treatment drum at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multilayered film can be readily deposited by rotating a rotary drum equipped with a film deposition source in the deposition treatment drum.
Abstract:
PROBLEM TO BE SOLVED: To provide a rotary drum in a film deposition apparatus for an atomic layer chemical vapor deposition, which is capable of depositing a multi-layered film, wherein the size of the entire apparatus can be reduced, and to provide the film deposition apparatus for the atomic layer chemical vapor deposition.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a deposition treatment drum 100 at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multi-layered film can be readily deposited by rotating the rotary drum equipped with a film deposition source in the deposition treatment drum.