公开(公告)号：JP2010251385A

公开(公告)日：2010-11-04

申请号：JP2009096488

申请日：2009-04-10

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TAKAHASHI MASANORI ,  TANAKA SATOSHI ,  INOUE SOICHI ,  SANHONGI AKIKO ,  KODERA KATSUMASA ,  TAKAGI TAKAMASA

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/68 ,  G03F7/20

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for easily forming various kinds of patterns which are finer compared with an upper layer pattern. SOLUTION: The pattern forming method for forming the pattern onto a substrate includes: a resist layer laminating step of laminating a resist layer 3X on the upper layer side of a pattern formation layer 4X to be used for forming a desired pattern on the substrate; a diffraction pattern forming step of forming a diffraction pattern 1A having an opening opened at a predetermined pitch p for diffracting exposure light on the upper layer side of the resist layer 3X; and a whole image exposure step of performing whole image exposure with respect to the resist layer 3X in which a refractive index with respect to the exposure light is n, with diffracted light acquired by irradiation of exposure light having a wavelength λ from above the diffraction pattern 1A, which is then diffracted by the diffraction pattern 1A. The predetermined pitch p of the diffraction pattern 1A, the wavelength λ of the exposure light, and the refractive index n satisfy a condition of p>λ/n. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于容易地形成与上层图案相比更精细的各种图案的图案形成方法。 解决方案：用于在基板上形成图案的图案形成方法包括：抗蚀剂层层压步骤，在图案形成层4X的上层侧层叠抗蚀剂层3X，以在图案形成层4X上形成所需图案 基质; 衍射图案形成步骤，形成具有以预定间距p开口的开口的衍射图案1A，用于在抗蚀剂层3X的上层侧衍射曝光光; 以及对于相对于曝光光的折射率为n的抗蚀剂层3X进行全部图像曝光的整体图像曝光步骤，通过从衍射图案的上方照射具有波长λ的曝光光而获得的衍射光 1A，然后用衍射图1A衍射。 衍射图案1A的预定间距p，曝光光的波长λ和折射率n满足p>λ/ n的条件。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010211117A

公开(公告)日：2010-09-24

申请号：JP2009059456

申请日：2009-03-12

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： MATSUNAWA TETSUAKI ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027

CPC classification number: G06K9/036 ,  G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a pattern correction device capable of quickly and accurately performing correction processing of a pattern for use in manufacturing a semiconductor device.
SOLUTION: The pattern correction device includes: a pattern shape variable mask 12 formed by arranging a plurality of dot-shaped cells capable of varying transmittance or reflectance; a photodetector part 14 which is formed by arranging a plurality of dot-shaped optical sensor cells for detecting light and detects an optical image of a mask pattern formed by the pattern shape variable mask 12; a projection optical system 13 which forms an image of light radiated from a lighting part 11 to the pattern shape variable mask 14, on the photodetector part 14; and a control part 23 which controls cells of the pattern shape variable mask 12 in accordance with a shape of design layout to form a mask pattern and determines a correction amount of the mask pattern so that the difference between the optical image obtained in the photodetector part 14 by light radiated to the mask pattern and the design layout is within a prescribed range.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够快速且准确地执行用于制造半导体器件的图案的校正处理的图案校正装置。 解决方案：图案校正装置包括：通过布置能够改变透射率或反射率的多个点状单元形成的图案形状可变掩模12; 通过布置多个用于检测光的点状光学传感器单元并检测由图案形状可变掩模12形成的掩模图案的光学图像而形成的光电检测器部分14; 投影光学系统13，其在光电检测器部分14上形成从照明部分11辐射到图案形状可变掩模14的光的图像; 以及控制部23，其根据设计布局的形状来控制图案形状可变掩模12的单元，以形成掩模图案，并确定掩模图案的校正量，使得在光电检测器部分中获得的光学图像之间的差异 通过照射到掩模图案的光，并且设计布局在规定的范围内。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009218518A

公开(公告)日：2009-09-24

申请号：JP2008063343

申请日：2008-03-12

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUKUHARA KAZUYA ,  TANAKA SATOSHI ,  ITO MASAMITSU ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03B27/54 ,  G03F7/70083 ,  G03F7/70133 ,  G03F7/70308

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of increasing precision in resist dimensions on a semiconductor substrate.
SOLUTION: By the method of manufacturing a semiconductor device, light from a light source is transmitted or reflected in a prescribed region on a photomask for emitting to a photoresist on the substrate, thus manufacturing the semiconductor device. The manufacturing method includes: a step of calculating exposure amount correction information, namely distribution on the photomask having intensity of incident light, where intensity of emitted light from the photomask becomes uniform, based on the ratio of emitted light, namely the ratio of intensity of emitted light transmitted or reflected by the photomask to that of incident light at each position in the surface of the photomask; and a step of exposing an exposure region, while correcting intensity of incident light so that a dosage to the irradiation region of the photomask corresponding to the exposure region on the substrate becomes the exposure amount correction information at a corresponding position.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供一种能够提高半导体衬底的抗蚀剂尺寸精度的半导体器件的制造方法。 解决方案：通过制造半导体器件的方法，将光源的光在规定的区域中透射或反射到用于发射到基板上的光致抗蚀剂的光掩模上，从而制造半导体器件。 该制造方法包括：基于发射光的比例，即发光的强度比，计算曝光量校正信息的步骤，即具有入射光强度的光掩模的分布，其中来自光掩模的发射光的强度变得均匀 由光掩模透射或反射的光在光掩模表面的每个位置处的入射光的发射光; 以及在校正入射光强度的同时暴露曝光区域的步骤，使得对应于基板上的曝光区域的光掩模的照射区域的剂量变为相应位置处的曝光量校正信息。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009026827A

公开(公告)日：2009-02-05

申请号：JP2007186154

申请日：2007-07-17

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SATO TAKASHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F7/706 ,  G03B27/42 ,  G03F1/44

Abstract: PROBLEM TO BE SOLVED: To provide a method of inspecting an exposure apparatus and the exposure apparatus which can measure the state of the optical system of the exposure apparatus at a low cost, quickly, by a high precision, and easily. SOLUTION: The method has a step of so illuminating a first mask pattern by an inspecting light from the direction shifted by a predetermined angle θ from an optical axis H of an illuminating light and so diffracting the inspecting light by the first mask pattern as to generate a first diffracting light, a step of so diffracting the inspecting light by a second mask pattern as to generate a second diffracting light, and a step of so measuring a relative distance δx interposed between a first image generated by the first mask pattern projected on a wafer W via a projecting optical system 15 and a second image generated by the second mask pattern as to inspect the state of the projecting optical system 15 based on the relative distance δx. Hereupon, the first diffracting light is so dispersed unsymmetrically to the direction of the optical axis H as to irradiate thereby the projecting optical system 15, and the second diffracting light is so dispersed symmetrically to the direction of the optical axis H as to irradiate thereby the projecting optical system 15. The predetermined angle θ is so set that the above operations are performed. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够以低成本，高精度，容易地以低成本测量曝光装置的光学系统的状态的曝光装置和曝光装置的检查方法。 解决方案：该方法具有通过来自照明光的光轴H偏移预定角度θ的方向的检查光来照射第一掩模图案的步骤，从而将检查光衍射为第一掩模图案 为了产生第一衍射光，通过第二掩模图案衍射检查光以产生第二衍射光的步骤，以及测量插入由第一掩模图案产生的第一图像之间的相对距离δx的步骤 通过投影光学系统15投影在晶片W上，并且由第二掩模图案产生的第二图像基于相对距离δx来检查投影光学系统15的状态。 因此，第一衍射光如此散射到光轴H的方向不对称，从而照射投影光学系统15，并且第二衍射光如此被分散成对称于光轴H的方向照射，由此 投影光学系统15.预定角度θ被设定为执行上述操作。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008311502A

公开(公告)日：2008-12-25

申请号：JP2007158904

申请日：2007-06-15

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NAKAMURA HIROKO ,  HASHIMOTO KOJI ,  INOUE SOICHI ,  KOTANI TOSHIYA

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method of relaxing restrictions on a pattern, decreasing chip area, or improving reliability of wiring.
SOLUTION: The pattern forming method of forming a plurality of kinds of patterns includes a process (S101) of classifying the plurality of kinds of patterns into a first pattern formed by first lighting in a first lighting shape and a second pattern formed by second lighting in a second lighting shape different from the first lighting shape; a process (S104) of exposing a first resist layer to the first pattern by the first lighting; and a process (S110) of exposing a second resist layer different from the first resist layer to the second pattern by the second lighting.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种放松对图案的限制，减小芯片面积或提高布线可靠性的图案形成方法。 解决方案：形成多种图案的图案形成方法包括：将多种图案分类为通过第一照明形状的第一次点亮形成的第一图案和由第一照明形状形成的第二图案的处理（S101） 第二种照明形状与第一种照明形状不同; 通过第一次照明将第一抗蚀剂层曝光到第一图案的工序（S104） 以及通过第二次照明将与第一抗蚀剂层不同的第二抗蚀剂层曝光到第二图案的工序（S110）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007150354A

公开(公告)日：2007-06-14

申请号：JP2007038646

申请日：2007-02-19

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUKUHARA KAZUYA ,  TOUKI TATSUHIKO ,  INOUE SOICHI

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a practical pattern predicting method of patterns formed in a lithography process, and to provide a program for a computer to execute the pattern predicting method.
SOLUTION: This pattern predicting method is for predicting patterns formed on a photosensitive substrate by irradiating a light to a photo mask and by collecting a light passing through the photo mask on the photosensitive substrate via a projection optical system, wherein the method comprises: a process for approximating a transmittance fluctuation of the projection optical system fluctuating depending on the difference of the path of the light passing through the projection optical system, using an orthogonal polynomial defined by an iris coordinate of the projection optical system; and a process for predicting the above pattern based on an expansion coefficient of the orthogonal polynomial approximating the transmittance fluctuation of the projection optical system.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供在光刻工艺中形成的图案的实用模式预测方法，并且提供用于计算机执行图案预测方法的程序。 解决方案：该模式预测方法用于通过将光照射到光掩模上并通过投影光学系统收集通过感光基板上的光掩模的光来预测在感光基板上形成的图案，其中该方法包括 ：使用由投影光学系统的虹膜坐标定义的正交多项式来近似根据通过投影光学系统的光的路径的差异而波动的投影光学系统的透射率波动的处理; 以及基于近似投影光学系统的透射率波动的正交多项式的展开系数来预测上述图案的处理。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004327831A

公开(公告)日：2004-11-18

申请号：JP2003122339

申请日：2003-04-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KANEMITSU SHINGO ,  DEWA KYOKO ,  INOUE SOICHI ,  ITO SHINICHI ,  HIRANO TAKASHI

IPC: A61N5/00 ,  G03C5/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  G21G5/00 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/32 ,  G03F1/44 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a mask for a focus monitor which can form a highly precise monitor mark in a short time by using charged beams.
SOLUTION: This manufacturing method comprises a process of forming a first opening and a second opening 21 having a pattern shape corresponding to the first opening and surrounded by a laminated film consisting of a halftone film 2 on a translucent substrate and a light shielding film 3 on the halftone film in the surface region of the translucent substrate 1, and a process of etching the translucent substrate inside the second opening by irradiating an edge part of the second opening, the inside part of the second opening, and the outside part of the second opening with charged beams 52.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004126010A

公开(公告)日：2004-04-22

申请号：JP2002287363

申请日：2002-09-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： FUKUHARA KAZUYA ,  TOUKI TATSUHIKO ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F7/207 ,  G06F17/50 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/70

Abstract: PROBLEM TO BE SOLVED: To realize a practical photomask design method for reducing the influence of pupil transmissivity variation of a projection optical system.
SOLUTION: In the photomask design method, a transmissivity characteristic of the projection optical system 6 which changes depending on the difference of passways of diffracted rays L1-L3 passing through the projection optical system 6 in the projection optical system 6 is obtained and, by using the transmissivity characteristic, the mask bias of a photomask 5 is obtained.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004109453A

公开(公告)日：2004-04-08

申请号：JP2002271546

申请日：2002-09-18

Applicant: Toshiba Corp ,  Toshiba Microelectronics Corp ,  東芝マイクロエレクトロニクス株式会社 ,  株式会社東芝

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI ,  ICHIKAWA HIROTAKA ,  KOBAYASHI SACHIKO

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To correct a designed pattern to shorten the mask pattern generation time in a method of generating a mask pattern for manufacturing a semiconductor apparatus.
SOLUTION: The method of generating a mask pattern comprises a step of preparing the designed pattern, a step of preparing a correction parameter, a step of preparing a first correction library in which pairs of edge coordinate groups and correction value groups for correcting the edge coordinate groups are registered, a step of acquiring an edge coordinate group of the designed patten, a step of generating a second correction library in which only a pair of an edge coordinate group agreeing with the acquired edge coordinate group and a correction value group is registered by simulation using information registered in the first correction library and the correction parameter, and a step of correcting the designed pattern to generate a mask pattern by using the edge coordinate group and the correction value group registered in the second correction library.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003303742A

公开(公告)日：2003-10-24

申请号：JP2002109311

申请日：2002-04-11

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a process parameter creating method that can obtain a desired pattern. SOLUTION: The method has a step to prepare a parameter group containing a plurality of process parameters, a step to obtain a second pattern by correcting the first parameters on the basis of the parameter group, a step to forecast a third pattern to be formed on a semiconductor substrate by etching on the basis of the parameter group and the second parameters, a step to obtain an evaluation result by comparing the third pattern and the first pattern, a step to determine if the evaluation result satisfies a predetermined condition, a step, if not, to return to the step to correct the first pattern by correcting the process parameters in the parameter group, and a step, if satisfied, to decide the process parameters in the parameter group as the final process parameters. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供可以获得期望图案的工艺参数创建方法。 解决方案：该方法具有准备包含多个处理参数的参数组的步骤，通过基于参数组校正第一参数来获得第二模式的步骤，将第三模式预测为 通过基于参数组和第二参数的蚀刻在半导体衬底上形成步骤，通过比较第三图案和第一图案来获得评估结果的步骤，确定评估结果是否满足预定条件的步骤， 如果没有，则通过校正参数组中的过程参数来返回到校正第一模式的步骤，如果满足，则将步骤参数组中的过程参数确定为最终过程参数。 版权所有（C）2004，JPO