Optical image intensity calculation method, patterning method, method of manufacturing semiconductor device, and optical image intensity distribution calculation program
    31.
    发明专利
    Optical image intensity calculation method, patterning method, method of manufacturing semiconductor device, and optical image intensity distribution calculation program 有权
    光学图像强度计算方法,绘图方法,制造半导体器件的方法和光学图像强度分布计算程序

    公开(公告)号:JP2011129721A

    公开(公告)日:2011-06-30

    申请号:JP2009286973

    申请日:2009-12-17

    CPC classification number: G03F7/70441 G03F1/36 G03F7/70466

    Abstract: PROBLEM TO BE SOLVED: To provide an optical image intensity calculation method of calculating an optical image intensity distribution formed by whole image exposure in a short time and correctly. SOLUTION: The optical image intensity distribution formed on a resist disposed on the side of a lower layer of a diffraction pattern by performing whole image exposure from the side of an upper surface of the diffraction pattern formed by lines L and spaces S on a substrate at a predetermined pattern pitch is calculated by using a multi-mode waveguide path analytic model or fractional Fourier transform for the diffraction pattern. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种光学图像强度计算方法,用于在短时间内正确地计算由整个图像曝光形成的光学图像强度分布。 解决方案:通过从由线L和间隔S形成的衍射图案的上表面的一侧进行整体图像曝光,形成在设置在衍射图案的下层侧的抗蚀剂上的光学图像强度分布 通过使用用于衍射图案的多模式波导路径分析模型或分数阶傅里叶变换来计算预定图案间距的基板。 版权所有(C)2011,JPO&INPIT

    Process model evaluation method, process model generation method and process model evaluation program
    32.
    发明专利
    Process model evaluation method, process model generation method and process model evaluation program 审中-公开
    过程模型评估方法,过程模型生成方法和过程模型评估程序

    公开(公告)号:JP2010087299A

    公开(公告)日:2010-04-15

    申请号:JP2008255636

    申请日:2008-09-30

    CPC classification number: G03F1/36

    Abstract: PROBLEM TO BE SOLVED: To provide: a process model evaluation method capable of suitably evaluating or generating a process model; a process model generation method; and a process model evaluation program.
    SOLUTION: The process model evaluation method includes: obtaining a dimensional difference amount between a first pattern formed by actually applying a process onto a plurality of prescribed patterns and a second pattern calculated based upon the plurality of prescribed patterns by applying a process model modeling the process for obtaining the first pattern from the prescribed pattern; and evaluating the process model by an evaluation index based on the number of the patterns at which the dimensional difference amount out of the second patterns is equal to or less than a threshold value.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供:能够适当地评估或生成过程模型的过程模型评估方法; 过程模型生成方法; 和过程模型评估程序。 解决方案:过程模型评估方法包括:通过将过程模型应用于通过实际应用多个规定模式形成的第一模式和基于多个规定模式计算的第二模式来获得尺寸差异量 建模从规定的图案获得第一图案的过程; 以及基于第二图案之间的尺寸差异量等于或小于阈值的图案的数量的评估指标来评估处理模型。 版权所有(C)2010,JPO&INPIT

    Generating method for pattern data, and pattern data generating program
    33.
    发明专利
    Generating method for pattern data, and pattern data generating program 有权
    模式数据生成方法和模式数据生成程序

    公开(公告)号:JP2010079184A

    公开(公告)日:2010-04-08

    申请号:JP2008250293

    申请日:2008-09-29

    CPC classification number: G03F1/36

    Abstract: PROBLEM TO BE SOLVED: To provide a generating method for pattern data in which occurrence of a fatal error is suppressed when a semiconductor manufacturing process is implemented based upon a cell pattern to be evaluated. SOLUTION: A first simulation result is obtained by performing process simulation on mask pattern data based upon the cell pattern to be evaluated on data to be evaluated, a marginal error pattern in the cell pattern to be evaluated is extracted from the result, and a cell to be evaluated with a peripheral environmental pattern which has a peripheral environment pattern disposed on the marginal error pattern so that a second simulation result obtained by generating the mask pattern data and performing the process simulation becomes worse than the first simulation result is generated. Process simulation is performed on mask pattern data based upon the cell pattern to be evaluated with the peripheral environment pattern and if there is a fatal error pattern, the cell pattern to be evaluated including the marginal error pattern or the mask pattern data based upon the cell to be evaluated is corrected. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种当基于要评估的单元图案来实现半导体制造处理时抑制致命错误的发生的图形数据的生成方法。 解决方案:通过基于要评估的数据要评估的单元格图案对掩模图案数据进行处理模拟来获得第一模拟结果,从结果中提取要评估的单元格图案中的边缘误差图案, 以及周边环境模式进行评估的单元,其具有设置在边缘误差图案上的周边环境图案,从而生成通过生成掩模图案数据并进行处理模拟而获得的第二模拟结果变得比第一模拟结果更差 。 基于要利用外围环境模式评估的单元图案对掩模图案数据执行过程模拟,并且如果存在致命错误模式,则基于该单元的待评估的单元图案包括边缘误差图案或掩模图案数据 被评估被更正。 (C)2010,JPO&INPIT

    Pattern formation defective area calculating method and pattern layout evaluating method
    34.
    发明专利
    Pattern formation defective area calculating method and pattern layout evaluating method 有权
    模式形成缺陷区计算方法和模式布局评估方法

    公开(公告)号:JP2010079063A

    公开(公告)日:2010-04-08

    申请号:JP2008248785

    申请日:2008-09-26

    CPC classification number: G06F17/5081

    Abstract: PROBLEM TO BE SOLVED: To provide an exposure defective area calculating method of accurately calculating a pattern formation detective area, caused by a step pattern in a step pattern layout plane, in a short time. SOLUTION: Correspondence relation between the distance from a pattern of a gate G1, in the substrate plane and information regarding a possibility of an exposure defective area; a layout used for pattern formation of a gate G1 are used to calculate, as a defect occurrence risk degree map 21; and an area where a pillar pattern P has a pattern formation defect, when the pillar pattern P is formed after the gate G1, after the gate G1 is formed as the step pattern on the substrate. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种在短时间内精确地计算由步进图案布局平面中的台阶图案引起的图案形成检测区域的曝光缺陷区域计算方法。 < P>解决方案:从基板平面中的栅极G1的图案的距离和关于曝光缺陷区域的可能性的信息之间的对应关系; 使用用于门G1的图案形成的布局作为缺陷发生风险度映射21来计算; 以及在栅极G1形成为基板上的台阶图形之后,当在栅极G1之后形成柱状图案P时,柱状图案P具有图案形成缺陷的区域。 版权所有(C)2010,JPO&INPIT

    Exposure method and semiconductor device
    35.
    发明专利
    Exposure method and semiconductor device 审中-公开
    曝光方法和半导体器件

    公开(公告)号:JP2010074026A

    公开(公告)日:2010-04-02

    申请号:JP2008242093

    申请日:2008-09-22

    CPC classification number: G03B27/32

    Abstract: PROBLEM TO BE SOLVED: To provide an exposure method that improves a production yield, and to provide a semiconductor device produced by the exposure method. SOLUTION: The exposure method includes an exposure process for exposing a substrate through a halftone mask 30 with quadrupole illumination to form plural columnar portions that are disposed into a matrix shape in a first direction and a second direction orthogonal to the first direction. The halftone mask 30 includes a first pattern 31 that is extended in the first direction and disposed at predetermined pitches in the second direction; and a second pattern 32 that is extended in the second direction and disposed at predetermined pitches in the first direction such that an intersection portion 33 intersecting the first pattern 31 is formed. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供提高生产率的曝光方法,以及提供通过曝光方法制造的半导体器件。 解决方案:曝光方法包括用四极照明使基板通过半色调掩模30曝光的曝光工艺,以形成沿与第一方向正交的第一方向和第二方向成矩阵形状的多个柱状部分。 半色调掩模30包括沿第一方向延伸并以第二方向以预定间距设置的第一图案31; 以及第二图案32,其沿第二方向延伸并且以第一方向以预定间距设置,使得形成与第一图案31相交的交叉部33。 版权所有(C)2010,JPO&INPIT

    Pattern verification-inspection method, method for acquiring distribution of optical image intensity, and program for acquiring distribution of optical image intensity
    36.
    发明专利
    Pattern verification-inspection method, method for acquiring distribution of optical image intensity, and program for acquiring distribution of optical image intensity 审中-公开
    图形验证检验方法,获取光学图像强度分布的方法,以及获取光学图像强度分布的程序

    公开(公告)号:JP2010002772A

    公开(公告)日:2010-01-07

    申请号:JP2008162508

    申请日:2008-06-20

    CPC classification number: G03F1/86

    Abstract: PROBLEM TO BE SOLVED: To obtain a pattern verification-inspection method by which a pattern dimension of a mask pattern is inspected with high accuracy.
    SOLUTION: The pattern verification-inspection method for inspecting a pattern dimension of a mask pattern formed in a photomask includes: an illumination condition deriving step of deriving illumination conditions at the position of an inspection object based on the position of the inspection object that is the position of a mask pattern as an inspection object within the photomask plane and based on the distribution of illumination conditions within the photomask plane of the exposure light irradiating the photomask by an exposure apparatus; a simulation step of carrying out lithographic simulation of the mask pattern at each position of the inspection object based on the illumination conditions at the position of the inspection object and the pattern contour of the mask pattern; and a verification-inspection step of inspecting the pattern dimension based on the result of the lithography simulation.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:获得以高精度检查掩模图案的图案尺寸的图案验证检查方法。 解决方案:用于检查形成在光掩模中的掩模图案的图案尺寸的图案验证检查方法包括:基于检查对象的位置导出检查对象位置处的照明条件的照明条件导出步骤 即作为光掩模平面内的检查对象的掩模图案的位置,并且基于通过曝光装置照射光掩模的曝光光的光掩模面内的照明条件的分布; 基于检查对象的位置的照明条件和掩模图案的图案轮廓,对检查对象的各位置处的掩模图案进行光刻模拟的模拟步骤; 以及基于光刻仿真的结果检查图案尺寸的验证检查步骤。 版权所有(C)2010,JPO&INPIT

    Lithography simulation method
    37.
    发明专利
    Lithography simulation method 审中-公开
    LITHOGRAPHY模拟方法

    公开(公告)号:JP2009294386A

    公开(公告)日:2009-12-17

    申请号:JP2008147106

    申请日:2008-06-04

    CPC classification number: G03F7/705 G03F1/36

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography simulation method, by which calculation time can be reduced.
    SOLUTION: The simulation method includes steps of: (S1) dividing a mask pattern by a plurality of first calculation region A1, the size of which is determined by the range affecting an optical proximity effect; (S2) dividing each of the first calculation regions A1 into a plurality of second calculation regions A2; (S3) calculating a plurality of electromagnetic field distributions to be formed by irradiation of the mask pattern with exposure light, corresponding to the plurality of second calculation regions A2 in each of the plurality of first calculation regions A1; (S4) compounding the plurality of electromagnetic field distributions calculated in the above step in each of the first calculation regions A1 to obtain a plurality of electromagnetic field distributions respectively corresponding to the plurality of the first calculation regions A1; and (S5) calculating an optical image to be formed on the substrate by using the plurality of electromagnetic field distributions respectively corresponding to the first calculation regions A1.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供可以减少计算时间的光刻模拟方法。 解决方案:模拟方法包括以下步骤:(S1)将掩模图案除以多个第一计算区域A1,其大小由影响光学邻近效应的范围确定; (S2)将第一计算区域A1分割为多个第二计算区域A2; (S3)对应于多个第一计算区域A1中的每一个中的多个第二计算区域A2,计算通过用曝光光照射掩模图案而形成的多个电磁场分布; (S4)将上述步骤中计算出的多个电磁场分布复合到第一计算区域A1中,以获得分别对应于多个第一计算区域A1的多个电磁场分布; 以及(S5)通过使用分别对应于第一计算区域A1的多个电磁场分布来计算要在基板上形成的光学图像。 版权所有(C)2010,JPO&INPIT

    Method and program for preparing evaluation pattern
    38.
    发明专利
    Method and program for preparing evaluation pattern 审中-公开
    用于准备评估模式的方法和程序

    公开(公告)号:JP2009181053A

    公开(公告)日:2009-08-13

    申请号:JP2008021558

    申请日:2008-01-31

    Abstract: PROBLEM TO BE SOLVED: To provide a method and program for preparing an evaluation pattern, which can appropriately evaluate pattern transfer fidelity. SOLUTION: The method for preparing a pattern includes: a step of inspecting the pattern transfer fidelity of an object to be inspected for each peripheral candidate pattern, wherein a plurality of the marginal candidate patterns are arranged on a periphery of the object to be inspected; a step of extracting at least one peripheral pattern from among the plurality of the marginal candidate patterns based on the inspection results; and a step of preparing the evaluation pattern by arranging the peripheral patterns on the periphery of the object to be evaluated. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供可以适当地评估图案转印保真度的用于制备评估图案的方法和程序。 解决方案:用于制备图案的方法包括:检查每个外围候选图案的待检查对象的图案转印保真度的步骤,其中多个边缘候选图案布置在对象的周边上 被检查 基于检查结果从多个边缘候选图案中提取至少一个外围图案的步骤; 以及通过将周边图案布置在待评估对象的周围来准备评估图案的步骤。 版权所有(C)2009,JPO&INPIT

    Database system and data management method
    39.
    发明专利
    Database system and data management method 审中-公开
    数据库系统和数据管理方法

    公开(公告)号:JP2008299450A

    公开(公告)日:2008-12-11

    申请号:JP2007142659

    申请日:2007-05-29

    Abstract: PROBLEM TO BE SOLVED: To provide a database system and a data management method for reducing a transmission load to a communication network by dispensing with data matching among a plurality of data servers while maintaining the backup of data by the data servers.
    SOLUTION: For managing data records having a plurality of fields while making into a database, data servers are installed corresponding to the field values of at least two fields so that a data server group can be configured. In the case of registering data records from a client terminal, the data records are registered in all the data servers in the data server group corresponding to the field values of the data records, and one data server is selected as the object of retrieval based on a predetermined priority order from among the data servers, and retrieval is performed in the case of retrieval.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种数据库系统和数据管理方法,用于通过在保持数据服务器的数据备份的同时,通过分配多个数据服务器之间的数据匹配来减少对通信网络的传输负荷。 解决方案:为了在进入数据库的同时管理具有多个字段的数据记录,与至少两个字段的字段值对应地安装数据服务器,从而可以配置数据服务器组。 在从客户终端注册数据记录的情况下,数据记录被登记在与数据记录的字段值相对应的数据服务器组中的所有数据服务器中,并且一个数据服务器被选择为基于 在数据服务器中预定的优先级顺序,并且在检索的情况下执行检索。 版权所有(C)2009,JPO&INPIT

    Pattern information generating method
    40.
    发明专利
    Pattern information generating method 有权
    模式信息生成方法

    公开(公告)号:JP2008233687A

    公开(公告)日:2008-10-02

    申请号:JP2007075482

    申请日:2007-03-22

    CPC classification number: G06T7/001 G03F1/86 G06T2207/10056 G06T2207/30148

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern information generating method in which suitable pattern information can be generated. SOLUTION: The pattern information generating method includes a stage S11 of acquiring an image of a mask pattern; a stage S13 of matching the image of the mask pattern with a reference pattern; a stage S14 of setting reference points at a contour of the reference pattern at set intervals corresponding to distances from a vertex of the reference pattern; and a stage S15 of outputting contour points of the image of the mask pattern to positions predefined by the reference points. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供可以生成合适的图案信息的图案信息生成方法。 解决方案:图案信息生成方法包括获取掩模图案的图像的阶段S11; 将掩模图案的图像与参考图案进行匹配的阶段S13; 在参考图案的轮廓处以与参考图案的顶点的距离对应的设定间隔设置参考点的阶段S14; 以及将掩模图案的图像的轮廓点输出到由参考点预定义的位置的台S15。 版权所有(C)2009,JPO&INPIT

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