Abstract:
PROBLEM TO BE SOLVED: To provide an optical image intensity calculation method of calculating an optical image intensity distribution formed by whole image exposure in a short time and correctly. SOLUTION: The optical image intensity distribution formed on a resist disposed on the side of a lower layer of a diffraction pattern by performing whole image exposure from the side of an upper surface of the diffraction pattern formed by lines L and spaces S on a substrate at a predetermined pattern pitch is calculated by using a multi-mode waveguide path analytic model or fractional Fourier transform for the diffraction pattern. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide: a process model evaluation method capable of suitably evaluating or generating a process model; a process model generation method; and a process model evaluation program. SOLUTION: The process model evaluation method includes: obtaining a dimensional difference amount between a first pattern formed by actually applying a process onto a plurality of prescribed patterns and a second pattern calculated based upon the plurality of prescribed patterns by applying a process model modeling the process for obtaining the first pattern from the prescribed pattern; and evaluating the process model by an evaluation index based on the number of the patterns at which the dimensional difference amount out of the second patterns is equal to or less than a threshold value. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a generating method for pattern data in which occurrence of a fatal error is suppressed when a semiconductor manufacturing process is implemented based upon a cell pattern to be evaluated. SOLUTION: A first simulation result is obtained by performing process simulation on mask pattern data based upon the cell pattern to be evaluated on data to be evaluated, a marginal error pattern in the cell pattern to be evaluated is extracted from the result, and a cell to be evaluated with a peripheral environmental pattern which has a peripheral environment pattern disposed on the marginal error pattern so that a second simulation result obtained by generating the mask pattern data and performing the process simulation becomes worse than the first simulation result is generated. Process simulation is performed on mask pattern data based upon the cell pattern to be evaluated with the peripheral environment pattern and if there is a fatal error pattern, the cell pattern to be evaluated including the marginal error pattern or the mask pattern data based upon the cell to be evaluated is corrected. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an exposure defective area calculating method of accurately calculating a pattern formation detective area, caused by a step pattern in a step pattern layout plane, in a short time. SOLUTION: Correspondence relation between the distance from a pattern of a gate G1, in the substrate plane and information regarding a possibility of an exposure defective area; a layout used for pattern formation of a gate G1 are used to calculate, as a defect occurrence risk degree map 21; and an area where a pillar pattern P has a pattern formation defect, when the pillar pattern P is formed after the gate G1, after the gate G1 is formed as the step pattern on the substrate. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an exposure method that improves a production yield, and to provide a semiconductor device produced by the exposure method. SOLUTION: The exposure method includes an exposure process for exposing a substrate through a halftone mask 30 with quadrupole illumination to form plural columnar portions that are disposed into a matrix shape in a first direction and a second direction orthogonal to the first direction. The halftone mask 30 includes a first pattern 31 that is extended in the first direction and disposed at predetermined pitches in the second direction; and a second pattern 32 that is extended in the second direction and disposed at predetermined pitches in the first direction such that an intersection portion 33 intersecting the first pattern 31 is formed. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a pattern verification-inspection method by which a pattern dimension of a mask pattern is inspected with high accuracy. SOLUTION: The pattern verification-inspection method for inspecting a pattern dimension of a mask pattern formed in a photomask includes: an illumination condition deriving step of deriving illumination conditions at the position of an inspection object based on the position of the inspection object that is the position of a mask pattern as an inspection object within the photomask plane and based on the distribution of illumination conditions within the photomask plane of the exposure light irradiating the photomask by an exposure apparatus; a simulation step of carrying out lithographic simulation of the mask pattern at each position of the inspection object based on the illumination conditions at the position of the inspection object and the pattern contour of the mask pattern; and a verification-inspection step of inspecting the pattern dimension based on the result of the lithography simulation. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithography simulation method, by which calculation time can be reduced. SOLUTION: The simulation method includes steps of: (S1) dividing a mask pattern by a plurality of first calculation region A1, the size of which is determined by the range affecting an optical proximity effect; (S2) dividing each of the first calculation regions A1 into a plurality of second calculation regions A2; (S3) calculating a plurality of electromagnetic field distributions to be formed by irradiation of the mask pattern with exposure light, corresponding to the plurality of second calculation regions A2 in each of the plurality of first calculation regions A1; (S4) compounding the plurality of electromagnetic field distributions calculated in the above step in each of the first calculation regions A1 to obtain a plurality of electromagnetic field distributions respectively corresponding to the plurality of the first calculation regions A1; and (S5) calculating an optical image to be formed on the substrate by using the plurality of electromagnetic field distributions respectively corresponding to the first calculation regions A1. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method and program for preparing an evaluation pattern, which can appropriately evaluate pattern transfer fidelity. SOLUTION: The method for preparing a pattern includes: a step of inspecting the pattern transfer fidelity of an object to be inspected for each peripheral candidate pattern, wherein a plurality of the marginal candidate patterns are arranged on a periphery of the object to be inspected; a step of extracting at least one peripheral pattern from among the plurality of the marginal candidate patterns based on the inspection results; and a step of preparing the evaluation pattern by arranging the peripheral patterns on the periphery of the object to be evaluated. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a database system and a data management method for reducing a transmission load to a communication network by dispensing with data matching among a plurality of data servers while maintaining the backup of data by the data servers. SOLUTION: For managing data records having a plurality of fields while making into a database, data servers are installed corresponding to the field values of at least two fields so that a data server group can be configured. In the case of registering data records from a client terminal, the data records are registered in all the data servers in the data server group corresponding to the field values of the data records, and one data server is selected as the object of retrieval based on a predetermined priority order from among the data servers, and retrieval is performed in the case of retrieval. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern information generating method in which suitable pattern information can be generated. SOLUTION: The pattern information generating method includes a stage S11 of acquiring an image of a mask pattern; a stage S13 of matching the image of the mask pattern with a reference pattern; a stage S14 of setting reference points at a contour of the reference pattern at set intervals corresponding to distances from a vertex of the reference pattern; and a stage S15 of outputting contour points of the image of the mask pattern to positions predefined by the reference points. COPYRIGHT: (C)2009,JPO&INPIT