公开(公告)号：US20070017631A1

公开(公告)日：2007-01-25

申请号：US11187407

申请日：2005-07-22

Applicant: Frank Xu

Inventor： Frank Xu

IPC: B32B37/00

CPC classification number: B32B37/14 ,  B32B38/06 ,  B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C08L59/00 ,  C09J5/00 ,  C09J2205/31 ,  C09J2451/00 ,  G03F7/0002 ,  Y10T156/10

Abstract: The present invention provides a method adhering a layer to a substrate that features defining first and second interfaces by having a composition present between the layer and the substrate that forms covalent bonds to the layer and adheres to the substrate employing one or more of covalent bonds, ionic bonds and Van der Waals forces. In this manner, the strength of the adhering force of the layer to the composition is assured to be stronger than the adhering force of the layer to the composition formed from a predetermined adhering mechanism, i.e., an adhering mechanism that does not include covalent bonding.

Abstract translation: 本发明提供了一种通过使层与衬底之间存在的组合物与层形成共价键并且使用一种或多种共价键粘合到衬底上而将层粘附到基底上的方法，其特征在于限定第一和第二界面， 离子键和范德华力。 以这种方式，确保层对组合物的粘附力的强度比由预定粘合机构即不包括共价键的粘合机构形成的组合物的层的粘合力更强。

公开(公告)号：KR1020160102386A

公开(公告)日：2016-08-30

申请号：KR1020167006523

申请日：2014-12-17

Applicant: 디아이씨 가부시끼가이샤

Inventor： 이베,다케시 ,  야다,마코토

IPC: G03F7/00 ,  C08F12/32 ,  C08F12/34 ,  C08F257/00 ,  G03F7/20 ,  G03F1/80 ,  G03F9/00

CPC classification number: C08F12/36 ,  B29C59/026 ,  B81C2201/0153 ,  C08F12/32 ,  C08F12/34 ,  C08F257/00 ,  C08K5/00 ,  C08L101/02 ,  C09D125/16 ,  G03F7/0002 ,  H01L21/31144 ,  G03F1/80 ,  G03F7/2055 ,  G03F9/7042

Abstract: 본발명은, 비닐기가연결된방향족기를포함하는특정한구조를측쇄에갖는중합체 (A)를함유하는드라이에칭레지스트용경화성수지조성물이며, 해당중합체 (A) 중의특정한구조가중합체 (A) 중에서 80 내지 100중량%인것을특징으로하는드라이에칭레지스트용경화성수지조성물을제공하는것이다. 또한, 해당드라이에칭레지스트용경화성조성물을경화해서이루어지는것을특징으로하는드라이에칭용레지스트마스크, 및나노임프린트법에의한패턴을갖는것인드라이에칭용레지스트마스크를제공하는것이다.

Abstract translation: 提供一种干蚀刻抗蚀剂用固化性树脂组合物，该固化性树脂组合物含有在侧链具有包含具有乙烯基的芳香族基团的特定结构的聚合物（A）。 聚合物（A）包括80至100重量％的特定结构。 此外，提供了通过固化用于干蚀刻抗蚀剂的可固化组合物获得的干蚀刻抗蚀剂掩模，以及具有通过纳米压印法形成的图案的干蚀刻抗蚀剂掩模。

公开(公告)号：KR101416112B1

公开(公告)日：2014-07-08

申请号：KR1020087003583

申请日：2006-06-05

Applicant: 캐논 나노테크놀로지즈 인코퍼레이티드

Inventor： 슈프랭크와이.

IPC: B29B9/00 ,  C30B23/00 ,  C30B25/00

CPC classification number: B32B37/14 ,  B32B38/06 ,  B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C08L59/00 ,  C09J5/00 ,  C09J2205/31 ,  C09J2451/00 ,  G03F7/0002 ,  Y10T156/10

Abstract: 본 발명은 층과 공유 결합을 형성하고, 공유 결합, 이온 결합, 및 반데르 발스 힘 중 하나 이상을 채용하여 기판과 접착하는, 층과 기판 사이에 존재하는 조성물을 가짐으로써, 제1 및 제2 경계면을 형성하는 단계를 특징으로 하는 기판에 층을 접착시키는 방법을 개시한다. 이러한 방법으로, 층과 조성물의 접착력의 강도는 소정의 접착 메카니즘, 즉 공유 결합을 포함하지 않는 접착 메카니즘으로 형성된 층과 조성물의 접착력보다 강한 것이 보장된다. 따라서, 본 발명은 제1 및 제2 재료를 서로 접착시키는 조성물에 관한 것이다. 이 조성물은 백본 그룹 및 제1 및 제2 작용기를 갖춘 다중-작용기 반응성 화합물; 가교제; 및 촉매를 특징으로 한다. 제1 작용기는 제1 화학선 에너지와 반응하여 가교된 분자를 형성하고, 제1 재료의 서브셋에 접착된다. 제2 작용기는, 제1 화학선 에너지와 상이한, 제2 화학선 에너지와 반응하여 제2 재료에 접착된다.
기판, 층, 조성물, 경계면, 공유 결합, 이온 결합, 반데르 발스 힘, 백본 그룹, 제1 및 제2 작용기, 다중-작용기 반응성 화합물, 촉매, 가교제.

公开(公告)号：US20150037922A1

公开(公告)日：2015-02-05

申请号：US14345675

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs

IPC: H01L31/18

CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

Abstract translation: 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 差距在其间。 在抗蚀剂和印模的延伸表面之间留有间隙。 如果沉积的抗蚀剂层比目标量稍厚一些，则将简单地导致抗蚀剂和工具之间的较小的间隙。 连续间隙的存在确保印章下没有压力。 因此，突起上的力i仅由压力上方的压力确定并且被良好地控制，导致良好控制的孔尺寸。 间隙防止抗蚀剂完全从任何一个区域泵出，从而防止任何区域不被抗蚀剂覆盖。 印模可以与基板接触地脉动，使压痕突起重复变形。 几个脉冲比单次压机更好地清除任何浮渣层，如通过蚀刻测试比较正常蚀刻对正常时间蚀刻掉的衬底材料的程度所测量的。 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 在它们之间的差距。 在抗蚀剂和印模的延伸表面之间留有间隙。

公开(公告)号：US07928004B2

公开(公告)日：2011-04-19

申请号：US11671688

申请日：2007-02-06

Applicant: Robert Seidel ,  Carsten Peters ,  Frank Feustel

Inventor： Robert Seidel ,  Carsten Peters ,  Frank Feustel

IPC: H01L21/4763

CPC classification number: B81B7/0006 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/28114 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76817 ,  H01L21/76838 ,  H01L21/76852 ,  H01L21/76885 ,  H01L2221/1021

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract translation: 通过基于压印技术形成金属化结构，其中可以通常形成通孔和沟槽，由于根据常规工艺技术所要求的至少一个进一步对准过程，可以实现工艺复杂性的显着降低。 此外，可以通过提供适当设计的压印模具来提高压印光刻的灵活性和效率，以便提供表现出增加的填充能力的通孔开口和沟槽，从而也提高了最终获得的金属化结构在可靠性，抗性 电迁移等。

公开(公告)号：US07803712B2

公开(公告)日：2010-09-28

申请号：US11636264

申请日：2006-12-07

Applicant: Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

Inventor： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

IPC: H01L21/308

CPC classification number: H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.

公开(公告)号：US20070257389A1

公开(公告)日：2007-11-08

申请号：US11741603

申请日：2007-04-27

Applicant: Alexander Ruf

Inventor： Alexander Ruf

IPC: B29C41/02 ,  B29C41/52

CPC classification number: B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  G03F9/7042 ,  G03F9/7053

Abstract: An imprint mask for defining a structure on a substrate is provided with a probe which generates a signal as a function of the displacement of the probe by a force with a lateral component. The imprint mask is aligned relative to a substrate with an alignment mark based upon an interaction of the probe and the alignment mark.

Abstract translation: 用于在衬底上限定结构的压印掩模设置有探针，其通过具有侧向分量的力产生作为探针的位移的函数的信号。 基于探针和对准标记的相互作用，压印掩模相对于具有对准标记的基板对准。

公开(公告)号：US20070228523A1

公开(公告)日：2007-10-04

申请号：US11710314

申请日：2007-02-23

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L29/41

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

公开(公告)号：US20070190786A1

公开(公告)日：2007-08-16

申请号：US11623817

申请日：2007-01-17

Applicant: Kenji Murao ,  Kosuke Kuwabara ,  Masahiko Ogino

Inventor： Kenji Murao ,  Kosuke Kuwabara ,  Masahiko Ogino

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/0046 ,  B29C43/021 ,  B29C2043/025 ,  B81B2201/0214 ,  B81B2203/0361 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: It is an object of the present invention to provide a method which can easily and selectively modify specific sites on indentations or protrusions of indentation/protrusion structures fabricated by nano-imprinting. Pressing a mold having indentation/protrusion structures onto a polymer substrate comprising at least two layers of different chemical composition exposes the second layer, which has been covered by the outermost layer, in pillars formed as a result of the pressing. Site-specific chemical modification of the pillars can be achieved by formulating a desired chemical composition for the second layer beforehand, or by chemical modification of the exposed second layer cross-sections in the pillars.

Abstract translation: 本发明的一个目的是提供一种方法，其可以容易且选择性地改变通过纳米压印制造的压痕/突起结构的凹陷或凸起上的特定部位。 将具有凹陷/突起结构的模具压到包含至少两层不同化学组成的聚合物基材上，将由最外层覆盖的第二层暴露在由压制形成的柱中。 可以通过预先为第二层配制所需的化学组合物，或者通过化学修饰柱中暴露的第二层横截面来实现柱的特定位点的化学修饰。

公开(公告)号：US07189635B2

公开(公告)日：2007-03-13

申请号：US10943559

申请日：2004-09-17

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L21/20

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

Abstract translation: 纳米级设备和方法可以减少设备上特征的特征尺寸。 具有间隔开的第一纳米线的图案的器件衬底的表面被消耗，使得第一纳米线的尺寸减小。 第二纳米线形成在相邻的第一纳米线之间的沟槽或间隙中，使得纳米级器件包括一组特征，其包括具有减小的尺寸的第一纳米线，并且第二纳米线与相邻的第一纳米线间隔开，第二纳米线通过 小壕沟