公开(公告)号：US6024620A

公开(公告)日：2000-02-15

申请号：US196302

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：US10056219B2

公开(公告)日：2018-08-21

申请号：US15603340

申请日：2017-05-23

Applicant: ELWHA LLC

Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood

IPC: H01J1/48 ,  H01J3/02

CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

Abstract: Graphene grids are configured for applications in vacuum electronic devices. A multilayer graphene grid is configured as a filter for electrons in a specific energy range, in a field emission device or other vacuum electronic device. A graphene grid can be deformable responsive to an input to vary electric fields proximate to the grid. A mesh can be configured to support a graphene grid.

公开(公告)号：US09659735B2

公开(公告)日：2017-05-23

申请号：US14706485

申请日：2015-05-07

Applicant: ELWHA LLC

Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01J1/48 ,  H01J3/02

CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

Abstract: Graphene grids are configured for applications in vacuum electronic devices. A multilayer graphene grid is configured as a filter for electrons in a specific energy range, in a field emission device or other vacuum electronic device. A graphene grid can be deformable responsive to an input to vary electric fields proximate to the grid. A mesh can be configured to support a graphene grid.

公开(公告)号：US20160148774A1

公开(公告)日：2016-05-26

申请号：US14929792

申请日：2015-11-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： So Ra PARK ,  Yoon Ho SONG ,  Jin Woo JEONG ,  Jae Woo KIM ,  Min Sik SHIN

IPC: H01J21/10 ,  H01J19/24

CPC classification number: H01J3/021 ,  H01J29/46 ,  H01J29/467 ,  H01J2203/0216 ,  H01J2203/0232

Abstract: The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

Abstract translation: 本公开可以提供具有增强的光束会聚的场发射装置。 为此，器件可以包括设置在阴极电极和阳极电极之间的栅极结构，其中栅极结构包括栅电极和设置在栅电极上的原子层片，栅电极面向发射极并具有至少一个 孔中形成。

公开(公告)号：US20120006784A1

公开(公告)日：2012-01-12

申请号：US13052064

申请日：2011-03-19

Applicant: XIAO-YANG LIN ,  CHEN FENG ,  LI-NA ZHANG ,  KAI-LI JIANG

Inventor： XIAO-YANG LIN ,  CHEN FENG ,  LI-NA ZHANG ,  KAI-LI JIANG

IPC: B32B37/14 ,  B32B37/12 ,  B32B37/02 ,  B32B38/10 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01J9/14 ,  H01J1/48 ,  H01J37/20 ,  H01J2203/0232

Abstract: The present disclosure relates to a method for making a transmission electron microscope grid. The method includes: (a) providing a substrate with a graphene layer on a surface of the substrate; (b) applying a carbon nanotube film structure to cover the graphene layer; (c) removing the substrate, to obtain a graphene layer-carbon nanotube film composite structure; and (d) placing the graphene layer-carbon nanotube film composite structure on a grid.

Abstract translation: 本公开涉及一种制造透射电子显微镜栅格的方法。 该方法包括：（a）在衬底的表面上提供具有石墨烯层的衬底; （b）施加覆盖所述石墨烯层的碳纳米管膜结构; （c）除去基板，得到石墨烯层 - 碳纳米管膜复合结构体; 和（d）将石墨烯层 - 碳纳米管膜复合结构放置在栅格上。

公开(公告)号：US20090195138A1

公开(公告)日：2009-08-06

申请号：US12317999

申请日：2008-12-31

Applicant: Lin Xiao ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Lin Xiao ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01J1/90

CPC classification number: H01J31/127 ,  H01J3/021 ,  H01J3/027 ,  H01J29/467 ,  H01J2203/0232 ,  H01J2329/463

Abstract: An electron emission device includes a cathode device and a gate electrode. The gate electrode is separated and insulted from the cathode device. The gate electrode includes a carbon nanotube layer having a plurality of spaces. A display device includes a cathode device, an anode device spaced from the cathode electrode and a gate electrode. The gate electrode is disposed between the cathode device and the anode device. The cathode device, the anode device and the gate electrode are separated and insulted from each other. The gate electrode comprises a carbon nanotube layer having a plurality of spaces.

Abstract translation: 电子发射装置包括阴极装置和栅电极。 栅电极与阴极器件分离并被侮辱。 栅电极包括具有多个空间的碳纳米管层。 显示装置包括阴极装置，与阴极电极隔开的阳极装置和栅电极。 栅电极设置在阴极器件和阳极器件之间。 阴极器件，阳极器件和栅电极彼此分离并被侮辱。 栅电极包括具有多个空间的碳纳米管层。

公开(公告)号：US06228667B1

公开(公告)日：2001-05-08

申请号：US09607563

申请日：2000-06-29

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01L2100

CPC classification number: H01J3/021 ,  H01J9/148 ,  H01J29/467 ,  H01J31/127 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 硅化物层通过暴露于氮源在高于1000℃的温度下进行处理，硅化物耐受后续的化学侵蚀，例如参与缓冲氧化物蚀刻工艺的化学侵蚀。

公开(公告)号：US6133056A

公开(公告)日：2000-10-17

申请号：US256882

申请日：1999-02-24

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。

公开(公告)号：US5956611A

公开(公告)日：1999-09-21

申请号：US922871

申请日：1997-09-03

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：TW200904746A

公开(公告)日：2009-02-01

申请号：TW097118618

申请日：2008-05-21

Applicant: 奈特洛公司 NANTERO, INC.

Inventor： 施布特 SEGAL, BRENT M. ,  盧湯瑪 RUECKES, THOMAS ,  魏喬森 WARD, JONATHAN W.

IPC: B82B ,  H01J

CPC classification number: H01J21/10 ,  H01J3/021 ,  H01J19/38 ,  H01J2203/0232 ,  Y10S977/742

Abstract: 提供具有奈米碳管薄膜、膜層、帶狀物及織物的真空微電子裝置。本發明所揭露的微電子真空裝置包含了具有三端點(射極、柵極及陽極)的三極管結構以及更高級別的裝置如四極管與五極管,上述之所有者皆使用奈米碳管來形成裝置的不同元件。在某些實施例中,奈米管織物的圖案部份可被用來作為網柵/閘極元件、導電軌道等。奈米管織物可懸浮或順形設置。在某些實施例中,使用强化的奈米管織物的方法。揭露各種施加、選擇性移除(例如蝕刻)、懸浮及强化的垂直地與水平地設置之奈米管織物的方法,其為與CMOS匹配的製造方法。在某些實施例中,奈米管織物三極管提供高速、小尺寸、低功率的裝置,其可被用於强烈輻射的應用中。

Abstract in simplified Chinese: 提供具有奈米碳管薄膜、膜层、带状物及织物的真空微电子设备。本发明所揭露的微电子真空设备包含了具有三端点(射极、栅极及阳极)的三极管结构以及更高级别的设备如四极管与五极管,上述之所有者皆使用奈米碳管来形成设备的不同组件。在某些实施例中,奈米管织物的图案部份可被用来作为网栅/闸极组件、导电轨道等。奈米管织物可悬浮或顺形设置。在某些实施例中,使用强化的奈米管织物的方法。揭露各种施加、选择性移除(例如蚀刻)、悬浮及强化的垂直地与水平地设置之奈米管织物的方法,其为与CMOS匹配的制造方法。在某些实施例中,奈米管织物三极管提供高速、小尺寸、低功率的设备,其可被用于强烈辐射的应用中。