公开(公告)号：US08071970B2

公开(公告)日：2011-12-06

申请号：US12328745

申请日：2008-12-04

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L47/00

CPC classification number: H01L45/1675 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

Abstract translation: 一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是 披露

公开(公告)号：US07906774B2

公开(公告)日：2011-03-15

申请号：US12189087

申请日：2008-08-08

Applicant: Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

Inventor： Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

IPC: H01L47/00 ,  G11C11/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5

Abstract translation: 公开了一种相变存储器件，包括衬底，衬底上的相变层，电连接相变层的第一侧的第一电极，电连接相变层的第二侧的第二电极，其中， 相变层主要由镓（Ga），锑（Sb）和碲（Te）和不可避免的杂质构成，其组成范围为GaxTeySbz，5

公开(公告)号：US07835177B2

公开(公告)日：2010-11-16

申请号：US11493595

申请日：2006-07-27

Applicant: Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hung Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hung Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: G11C11/00

CPC classification number: H01L45/1675 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.

Abstract translation: 通过将锥形结构蚀刻成相变层而制造的相变存储器（PCM）单元，并且平坦化相变层上的电介质层直到锥形结构的尖端暴露以接触加热电极。 因此，相变层的露出端的面积被控制为极小的尺寸，相变层和加热电极之间的接触面积减小，从而降低了工作电流。

公开(公告)号：US20090147900A1

公开(公告)日：2009-06-11

申请号：US12121319

申请日：2008-05-15

Applicant: Chien-Min Lee ,  Ren-Jr Chen

Inventor： Chien-Min Lee ,  Ren-Jr Chen

IPC: H04L7/04

CPC classification number: H04L27/2662 ,  H04L27/2678

Abstract: A method and a device for detecting a synchronization signal with a high identification rate are provided, which are suitable for a wide-area Orthogonal Frequency Division Multiplexing (OFDM) system. The method and device can precisely detect information of a synchronization signal, without being interfered by transmission channels and noises in an external environment. Three sliding windows are used to obtaining a balance value as an offset value for the output signal of the method and the device. A peak position of the output signal is identified and then compensated for a delay caused by the length of one of the sliding windows. Such a position is an edge of the synchronization signal.

Abstract translation: 提供了一种用于检测具有高识别率的同步信号的方法和装置，其适用于广域正交频分复用（OFDM）系统。 该方法和装置可以精确地检测同步信号的信息，而不受外部环境中的传输信道和噪声的干扰。 使用三个滑动窗口来获得平衡值作为方法和装置的输出信号的偏移值。 识别输出信号的峰值位置，然后补偿由一个滑动窗口的长度引起的延迟。 这样的位置是同步信号的边缘。

公开(公告)号：US20090067543A1

公开(公告)日：2009-03-12

申请号：US12177070

申请日：2008-07-21

Applicant: Chang-Lung HSIAO ,  Ren-Jr CHEN ,  Chung-Lien HO ,  Chien-Min LEE ,  Wern-Ho SHEEN

Inventor： Chang-Lung HSIAO ,  Ren-Jr CHEN ,  Chung-Lien HO ,  Chien-Min LEE ,  Wern-Ho SHEEN

IPC: H04L27/36 ,  H04L27/00

CPC classification number: H04L1/0013 ,  H04B7/0617 ,  H04L1/0067 ,  H04L1/0071 ,  H04L1/06

Abstract: An apparatus for data processing in a multi-channel communication system is provided. The apparatus includes an encoder configured to encode a number of bits for transmission via channels in the multi-channel communication system into coded bits and split the coded bits into a number of first sets of bits at a first ratio, a number of first rate units coupled to the encoder, each of the first rate units being configured to adjust one set of the first sets of bits in size at at least one rate, and a controller configured to assign the first ratio to the encoder and the at least one rate to each of the first rate units based on conditions of the channels.

Abstract translation: 提供了一种用于多通道通信系统中的数据处理的装置。 该装置包括：编码器，被配置为对多个比特进行编码，以便经由多信道通信系统中的信道传输成编码比特，并将编码比特以第一比率分成多个第一组比特，第一比率单元 耦合到所述编码器，所述第一速率单元中的每一个被配置为以至少一个速率来调整大小的一组所述第一组位，以及控制器，被配置为将所述第一比率分配给所述编码器，并且所述至少一个速率 每个第一费率单位根据渠道的条件。

公开(公告)号：US20070148862A1

公开(公告)日：2007-06-28

申请号：US11437661

申请日：2006-05-22

Applicant: Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Wen-Han Wang ,  Wei-Su Chen ,  Min-Hung Lee

Inventor： Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Wen-Han Wang ,  Wei-Su Chen ,  Min-Hung Lee

IPC: H01L21/336

CPC classification number: H01L45/165 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1641

Abstract: A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.

Abstract translation: 提供了一种相变存储器层及其制造方法和相变存储单元。 通过加入与相变材料不反应的一种或多种非晶体晶体作为晶核，相变记忆层结晶，从而减少从非晶态转变为结晶态的时间。

公开(公告)号：US09300393B2

公开(公告)日：2016-03-29

申请号：US12914208

申请日：2010-10-28

Applicant: Tzu-Ming Lin ,  Chien-Min Lee

Inventor： Tzu-Ming Lin ,  Chien-Min Lee

IPC: H04B7/26 ,  H04B7/155 ,  H04L12/66

CPC classification number: H04B7/2606 ,  H04B7/155 ,  H04L12/66

Abstract: A method for a base station to transmit data, the data to be relayed by a relay station to user equipment, the method including: encoding, based on an identification of the relay station or an identification of the user equipment, control information that indicates resource allocation for the relay station; and transmitting the control information to the relay station.

Abstract translation: 一种用于基站发送数据的方法，将要由中继站中继的数据发送给用户设备，所述方法包括：基于中继站的标识或用户设备的标识编码指示资源的控制信息 中继站分配; 以及将所述控制信息发送到所述中继站。

公开(公告)号：US08971197B2

公开(公告)日：2015-03-03

申请号：US13431984

申请日：2012-03-28

Applicant: Chien-Min Lee ,  Chia-Pang Yen

Inventor： Chien-Min Lee ,  Chia-Pang Yen

IPC: H04W24/10 ,  H04L5/00

CPC classification number: H04W24/10 ,  H04L5/0007 ,  H04L5/0048 ,  H04L5/0053

Abstract: A method for reporting uplink control information and a wireless communication device using the same are disclosed. The wireless communication device supports multiple component carriers (CC), and the proposed method includes following steps. When a base station requests the wireless communication device to transmit aperiodic channel state information (CSI) report of one or more downlink CC to the base station, but the CSI of the downlink CCs may be invalid, following steps are executed on the downlink CC. Full payloads of channel quality indicator (CQI)/precoding matrix indicator (PMI) corresponding to a plurality of selectable RI values of the downlink CC are respectively calculated. Additionally, an RI value of the downlink CC is selected according to the full payloads of the CQI/PMI corresponding to the selectable RI values.

Abstract translation: 公开了一种用于报告上行链路控制信息的方法和使用其的无线通信设备。 无线通信装置支持多分量载波（CC），所提出的方法包括以下步骤。 当基站请求无线通信设备向基站发送一个或多个下行链路CC的非周期信道状态信息（CSI）报告，但是下行链路CC的CSI可能无效时，在下行链路CC上执行以下步骤。 分别计算与下行链路CC的多个可选RI值对应的信道质量指示符（CQI）/预编码矩阵指示符（PMI）的全部有效载荷。 此外，根据与可选择的RI值相对应的CQI / PMI的全部有效载荷来选择下行链路CC的RI值。

公开(公告)号：US08885525B2

公开(公告)日：2014-11-11

申请号：US13551614

申请日：2012-07-18

Applicant: Chia-Wen Hsieh ,  Chien-Min Lee

Inventor： Chia-Wen Hsieh ,  Chien-Min Lee

IPC: H04J3/00 ,  H04L1/18

CPC classification number: H04L1/1845 ,  H04L1/1822

Abstract: A method for partitioning a soft buffer in a time-division duplex system and an apparatus using the same are disclosed. The method includes the following steps. A total number of soft channel bits, a maximum number of transport blocks transmittable to a user equipment (UE) in a transmission time interval (TTI), a maximum number of downlink (DL) hybrid automatic retransmit request (HARQ) processes, and a configured maximum number of HARQ processes are determined. A partition size of the soft buffer is selected according at least to the total number of soft channel bits, the maximum number of transport blocks transmittable to the UE in the TTI, the maximum number of DL HARQ processes, and the preconfigured maximum number of HARQ processes.

Abstract translation: 公开了一种用于对时分双工系统中的软缓冲器进行分区的方法及其使用方法。 该方法包括以下步骤。 软通道位的总数，在传输时间间隔（TTI）中传输到用户设备（UE）的最大数量的传输块，最大数量的下行链路（DL）混合自动重传请求（HARQ）处理和 确定配置的最大数量的HARQ进程。 软缓冲器的分区大小至少根据软信道比特的总数，在TTI中可传送给UE的最大传输块数，DL HARQ进程的最大数目和预先配置的HARQ最大数量进行选择 过程。

公开(公告)号：US08629519B2

公开(公告)日：2014-01-14

申请号：US13333951

申请日：2011-12-21

Applicant: Chien-Min Lee ,  Kuang-Ching Chen ,  Fu-Tai Liou

Inventor： Chien-Min Lee ,  Kuang-Ching Chen ,  Fu-Tai Liou

IPC: H01L29/82

CPC classification number: H01L43/02 ,  G01R33/098 ,  H01F10/3254 ,  H01L27/22

Abstract: A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.

Abstract translation: 提供了包括基板，绝缘层，隧道磁阻部件和电极阵列的隧道式磁阻传感器。 绝缘层设置在基板上。 隧道磁阻分量嵌入在绝缘层中。 电极阵列形成在单个金属层中，并且设置在TMR部件的下方或上方的绝缘层中。 电极阵列包括多个单独的电极。 电极电连接到隧道磁阻分量以形成电流 - 平面隧穿传导模式。 这种结构中的隧道磁阻传感器可以以降低的成本制造并且同时保持高性能。