OXIDE SUPERCONDUCTOR AND ITS PRODUCTION

    公开(公告)号:JP2000302596A

    公开(公告)日:2000-10-31

    申请号:JP10861199

    申请日:1999-04-15

    Abstract: PROBLEM TO BE SOLVED: To provide an oxide superconductor having a thick-filmy oxide superconducting layer on a base material and also to provide an oxide superconductor production process by which a thick-filmy oxide superconducting layer can be formed on a base material at a remarkably higher film forming rate as compared with that attained by a vapor phase process without causing any damage to the base material by a melt. SOLUTION: This superconductor is provided with: a base material 1 consisting of a high-melting point metal; an oxide intermediate layer 2 formed on at least one surface of the base material 1; an oxide superconductor seed film 3 formed on the intermediate layer 2; a superconducting base material layer 5 that contains at least one of constituent elements of the oxide intermediate layer 2 and is formed on the oxide superconductor seed film 3 by a liquid phase epitaxy; and a thick-filmy oxide superconducting layer 6 formed on the superconducting base material layer 5 by a liquid phase epitaxy.

    OXIDE SUPERCONDUCTOR AND ITS PRODUCTION

    公开(公告)号:JP2000281336A

    公开(公告)日:2000-10-10

    申请号:JP2000063319

    申请日:2000-03-03

    Abstract: PROBLEM TO BE SOLVED: To produce 'an oxide superconductor containing Ba as a constituent element' which exhibits stably high superconductor characteristics and is free from the deterioration with the passage of time. SOLUTION: It was found that the cause of the deterioration of the characteristics of a Ba-containing oxide superconductor (e.g. Hg-or Nd-system can be eliminated by lowering the content of the impurity carbon to be less than a prescribed level, which impurity carbon is mainly introduced through a raw material for feeding Ba. Based on this fact, the characteristics of the Ba-containing oxide superconductor are improved by allowing the superconductor to have such a constitution that the content of the impurity carbon is controlled to be not more than 2.0 atom.%. The Ba-containing oxide superconductor is produced by using, as the Ba-supplying raw material, BaO in which the content of the impurity carbon is reduced to be not more than 0.5% and further mixing the raw materials and synthesizing the product in a dry atmosphere in which the content of the gas containing carbon is restricted.

    SUPERCONDUCTIVE LATCHING/SFQ HYBRID RAM

    公开(公告)号:JP2000260187A

    公开(公告)日:2000-09-22

    申请号:JP5937699

    申请日:1999-03-05

    Abstract: PROBLEM TO BE SOLVED: To substantially reduce a necessary AC bias current by using an effective combination of an AC type logical circuit biased by an AC current and a fluxoid type logic circuit biased by a DC current. SOLUTION: A 256 RAM block construction comprises a memory cell with 16 row and 16 columns, a voltage type logic driver circuit and sense circuit composed of superconductive latching elements biased by an AC current, and a fluxoid type logic decoder circuit composed of a superconductive single fluxoid quantum (FSQ) biased by a DC current. An AC power used for the whole RAMs can largely be reduced by arranging the decoder circuit part to be a fluxoid type logic circuit biased by a DC current, and an increase in AC power consumption in the driver circuit can be absorbed by adopting a multi-driver system.

    METHOD FOR JOINING OXIDE SUPERCONDUCTING MATERIAL TO NORMAL CONDUCTOR

    公开(公告)号:JP2000252115A

    公开(公告)日:2000-09-14

    申请号:JP5397099

    申请日:1999-03-02

    Abstract: PROBLEM TO BE SOLVED: To suppress the occurrence of a reaction layer at the interface between an oxide superconducting material and a normal conductor, by partly or wholly dipping a member formed of the oxide superconducting material in the normal conductor maintained in a molten state, after mixing a material having the same component as the metallic component of the superconducting material in the member. SOLUTION: A member 1, formed of an oxide superconducting material, is partly or wholly dipped in a normal conductor 2 maintained in a molten state after a material having at least the same component as the metallic component of the superconducting material is mixed in the member 1. A Y-based high-temperature superconducting material is used as the material mixed in the normal conductor 2. At mixing of the Y-based superconducting material in the conductor 2, the material is pulverized. A mixing ratio of the superconducting material to 100 pts.wt. of normal conductor 2 is adjusted to about 0.5-20 pts.wt. The conductor 2 mixed with the superconducting material is melted in a crucible 4 made of alumina. Therefore, the occurrence of a reaction layer at the interface between the oxide superconducting material and normal conductor 2 can be suppressed.

    SUPERCONDUCTING WIRE HAVING HIGH CRITICAL CURRENT DENSITY

    公开(公告)号:JPH11111080A

    公开(公告)日:1999-04-23

    申请号:JP28315597

    申请日:1997-10-01

    Abstract: PROBLEM TO BE SOLVED: To improve critical current density in a magnetic field by the introduction of low inclination grain boundaries into a superconducting oxide film by forming a biaxially oriented superconducting oxide film on a metallic silver substrate having a 100} texture. SOLUTION: An oxide intermediate layer biaxially oriented in a substrate plane, a parallel plane of a substrate is proper in 100}, and magnesium oxide MgO is used as a material. When a lattice miss fit of oxide and superconducting oxide of this intermediate layer is high like 6 to 11%. The superconducting oxide growing on the oxide of the intermediate layer performs pseudo epitaxial growth having fluctuation in in-plane orientation. Due to this fluctuation, low inclination grain boundaries less than one degree of an inclination of a degree of not interrupting a path of a superconducting current, are generated in large numbers in a C axis oriented superconducting oxide film manufactured on the oxide of the intermediate layer. Since these low inclination grain boundaries operate as pin fastening points to trap a magnetic field, high critical current density in the magnetic field can be realized.

    SUPERCONDUCTING SINGLE MAGNETIC FLUX QUANTUM MULTI- INPUT EXCLUSIVE OR CIRCUIT

    公开(公告)号:JP2003264458A

    公开(公告)日:2003-09-19

    申请号:JP2002061425

    申请日:2002-03-07

    Abstract: PROBLEM TO BE SOLVED: To provide a superconducting single magnetic flux quantum multi-input exclusive OR circuit which can be operated at high speed without increasing the number of logic stages. SOLUTION: In the conventional superconducting single magnetic flux quantum two input exclusive OR circuit having a function that performs arithmetic operations of exclusive OR to a first input signal and a second input signal and outputs the result to an output end, it is constituted so that it has functions that perform arithmetic operations of exclusive OR to the first, second and third input signals and output the results on the output end by further providing an input circuit for inputting at least one or more third input signals in addition to the first and second input signals and providing the input circuit with a function that delays the phase of the third input signal to the phases of the first and second input signals in a desired time. COPYRIGHT: (C)2003,JPO

    HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTION AND SUPERCONDUCTING ELECTRONIC DEVICE HAVING IT

    公开(公告)号:JP2003264319A

    公开(公告)日:2003-09-19

    申请号:JP2002064448

    申请日:2002-03-08

    Abstract: PROBLEM TO BE SOLVED: To provide a high temperature superconducting Josephson junction in which a variation in characteristics of Josephson junction is suppressed and the characteristics and reliability of a product employing the Josephson junction can be enhanced, and a superconducting electronic device employing it. SOLUTION: The inventive high temperature superconducting Josephson junction sandwiches a barrier layer 5 by two superconductors 2 and 4 wherein the superconductors 2 and 4 contain one or more kinds of elements selected from among Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more kinds of elements selected from among Ba, Sr and Ca, Cu and oxygen, and the barrier layer 5 contains one or more kinds of elements selected from among La, Nd, Sm and Eu, and one or more kinds of elements selected from among Y, Gd, Dy, Ho, Er, Tm, Yb and Lu. COPYRIGHT: (C)2003,JPO

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