公开(公告)号：US11819827B2

公开(公告)日：2023-11-21

申请号：US16492975

申请日：2018-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo Hosono ,  Kazuhisa Kishida ,  Masaaki Kitano ,  Toshiharu Yokoyama

IPC: B01J23/75 ,  B01J23/46 ,  B01J23/745 ,  B01J23/755 ,  B01J35/10 ,  C01B3/04 ,  C01C1/04 ,  B01J27/24

CPC classification number: B01J23/75 ,  B01J23/462 ,  B01J23/745 ,  B01J23/755 ,  B01J35/1004 ,  C01B3/047 ,  C01C1/0411 ,  B01J27/24

Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1): MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2 g−1 or more.

公开(公告)号：US11757433B2

公开(公告)日：2023-09-12

申请号：US17881034

申请日：2022-08-04

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima

IPC: H03K3/00 ,  H03K3/02 ,  H03K5/01 ,  H03K19/20 ,  H03K5/00

CPC classification number: H03K3/02 ,  H03K5/01 ,  H03K19/20 ,  H03K2005/00013

Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.

公开(公告)号：US20230095617A1

公开(公告)日：2023-03-30

申请号：US17796026

申请日：2021-01-28

Applicant: Japan Science and Technology Agency

Inventor： Yoichi Murakami ,  Yukitaka Kato ,  Hiroki Takasu ,  Xiaohan Wang

IPC: C09K5/16 ,  F28D20/00 ,  F28D20/02

Abstract: A composite material including a covalent organic framework (COF) single crystal having a major axis length of larger than 120 μm or a COF polycrystal including a plurality of the single crystals, and at least one heat-storage compound. The heat-storage compound is a compound that generates heat or absorbs heat by adsorption to or desorption from the COF single crystal. Also, a heat dissipation/storage member containing the composite material as a heat storage/dissipation material a COF single crystal having a major axis length of larger than 120 μm, and a method for producing a COF single crystal by crystallizing COF raw material compounds via a solution containing an ionic liquid or an organic salt and an equilibrium adjusting agent to grow a COF single crystal.

公开(公告)号：US11591238B2

公开(公告)日：2023-02-28

申请号：US16647333

申请日：2018-09-14

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takashi Tachikawa

IPC: B32B5/16 ,  C01G23/00 ,  B01J23/02 ,  B01J35/00 ,  B01J37/10 ,  B82Y30/00

Abstract: There are provided a new type of crystal laminate of an alkaline earth metal titanate having improved catalytic activity, and a method for producing the same. The crystal laminate is provided having a crystal of the alkaline earth metal titanate as a constitutional unit, wherein the crystal being the constitutional unit is a cubic crystal, a tetragonal crystal or an orthorhombic crystal; the crystal being the constitutional unit has a primary particle diameter of 500 nm or less; and the crystal is layered with an orientation in a {100} plane direction thereof.

公开(公告)号：US20220406370A1

公开(公告)日：2022-12-22

申请号：US17877452

申请日：2022-07-29

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Satoshi Sugahara ,  Yusaku Shiotsu

IPC: G11C11/412 ,  G11C11/419 ,  H03K3/3565 ,  H01L27/11

Abstract: A bistable circuit includes a pair of inverter circuits each including a first FET being connected between a power supply line and an intermediate node and having a gate coupled to an input node and a first conductivity type channel, a second FET being connected between the intermediate node and an output node and having a gate coupled to the input node and the first conductivity type channel, a third FET being connected between the intermediate node and a bias node, a fourth FET being connected between the output node and a control line and having a gate coupled to a word line and a second conductivity type channel, wherein the pair of inverter circuits are connected in a loop shape, and gates of the third FETs of the pair of inverter circuits are coupled to one of the input and output nodes of the pair of inverter circuits.

公开(公告)号：US20220393563A1

公开(公告)日：2022-12-08

申请号：US17769919

申请日：2020-10-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima ,  Akira Toriumi

IPC: H02M1/00 ,  H02M7/12 ,  H02M3/156 ,  G01R15/09

Abstract: A current sensor includes an element that is in a high-resistance state when an absolute value of a current flowing between a first terminal and a second terminal is within a first range, and changes to a low-resistance state in which a resistance value is lower than that in the high-resistance state when the absolute value of the current exceeds the first range, and a circuit that supplies a current to be measured to the element, and senses a value of the current to be measured based on at least one of voltages of the first terminal and the second terminal.

公开(公告)号：US20220376797A1

公开(公告)日：2022-11-24

申请号：US17790819

申请日：2020-12-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Shingo KONO ,  Yasunobu NAKAMURA

IPC: H04B10/70 ,  G21K1/00 ,  G06N10/40

Abstract: A microwave photon control device includes a first qubit and a second qubit that are connected in parallel to a waveguide through which microwave photons propagate, and a direct coupling between the first qubit and the second qubit. An interval between the first qubit and the second qubit is (¼+n/2) times as long as a wavelength of microwave photons (where n is an integer equal to or larger than 0). A quantum entangled state is formed between the first qubit and the second qubit. The direct coupling cancels out a coupling via the waveguide between the first qubit and the second qubit. By a relaxation rate of the first qubit and the second qubit, and a phase of the quantum entangled state being controlled, the microwave photon control device operates while switching between a first operation mode, a second operation mode, and a third operation mode.

公开(公告)号：US20220376681A1

公开(公告)日：2022-11-24

申请号：US17880821

申请日：2022-08-04

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima

IPC: H03K3/02 ,  H03K5/01 ,  H03K19/20

Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.

公开(公告)号：US11492432B2

公开(公告)日：2022-11-08

申请号：US16818003

申请日：2020-03-13

Applicant: Japan Science and Technology Agency

Inventor： Hiroshi Yabu ,  Yuta Saito

IPC: C08F220/54 ,  B32B27/00 ,  G03F7/00 ,  C09D133/24 ,  B32B27/08 ,  B32B27/30 ,  B29C59/00 ,  B29C59/02 ,  C08F220/70 ,  B29K33/00

Abstract: Provided is a resin for nanoimprinting, which is capable of preventing removal of a transfer-receiving resin from a substrate when a mold is separated during nanoimprinting, and which is also capable of transferring a pattern on a mold to a transfer-receiving resin with high accuracy during thermal nanoimprinting, while improving the throughput. A resin for nanoimprinting, which is represented by formula (1). (In the formula, each of R1-R5 independently represents —H or —OH, and at least one of the R1-R5 moieties represents —OH; R6 represents a linear, branched or cyclic alkyl group having 1-20 carbon atoms, an aryl group having 6-20 carbon atoms or an aralkyl group having 7-20 carbon atoms; X represents an amide or an ester; Y may be absent, or represents an amide or an ester; P represents an integer of 1-10; and each of m and n represents an integer of 1 or more.)

公开(公告)号：US11456406B2

公开(公告)日：2022-09-27

申请号：US16957642

申请日：2018-12-26

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Junichiro Shiomi ,  Makoto Kashiwagi ,  Takashi Kodama

IPC: H01L35/22 ,  H01L35/34 ,  C01B33/02 ,  B22F1/00 ,  B22F1/054

Abstract: Provided is a silicon bulk thermoelectric conversion material in which thermoelectric performance is improved by reducing the thermal conductivity as compared with the prior art. In the silicon bulk thermoelectric conversion material, the ZT is greater than 0.2 at room temperature with the elemental silicon. In the silicon bulk thermoelectric conversion material, a plurality of silicon grains have an average of 1 nm or more and 300 nm or less, a first hole have an average of 1 nm or more and 30 nm or less present in the plurality of silicon grains and surfaces of the silicon grains, and a second hole have an average of 100 nm or more and 300 nm or less present between the plurality of silicon grains, wherein the aspect ratio of a crystalline silicon grain is less than 10.