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    CAPACITIVELY COUPLING LAYERS OF A MULTILAYER DEVICE
    41.
    发明申请
    CAPACITIVELY COUPLING LAYERS OF A MULTILAYER DEVICE 审中-公开
    多层设备的电容耦合层

    公开(公告)号：WO2008088720A1

    公开(公告)日：2008-07-24

    申请号：PCT/US2008/000367

    申请日：2008-01-10

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  KAMINS, Theodore, I. ,  STEWART, Duncan ,  QUITORIANO, Nathaniel, J.

    Inventor： KAMINS, Theodore, I. ,  STEWART, Duncan ,  QUITORIANO, Nathaniel, J.

    IPC: H05K3/46

    CPC classification number: H01L31/02002 ,  G02B6/43 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A multilayer device (100, 200, 300, 400, 500) includes an electronic device layer (104, 204, 304, 404, 504) a first electrode (110, 210, 410, 510) associated witht electronic layer (104, 204, 304, 404, 504), an optical layer (108, 208, 308, 408, 508), a second electrode (112, 212, 412, 512) associated with the optical layer (108, 208, 308, 408, 508), and an insulator layer (106, 206, 306, 406, 506) provided between the first and second electrodes. The first and second electrodes are capacitively coupled to each other to faciliate electrical communication between the electronic device layer (104, 204, 304, 404, 504) and the optical layer (108, 208, 308, 408, 508) through transmission of an electrical signal between the first and second electrodes. The electrical signal may be transmiited through the insulator layer (106, 206, 306, 406, 506). In additional, the electronic device layer (104, 204, 304, 404, 504 and the optical layer (108, 208, 308, 408, 508) may be in electrical communication with each other through capacitive coupling of the first electrode (110, 210, 410, 510) and the second electrode (112, 212, 412, 512).

    Abstract translation: 多层器件（100,200,300,400,500）包括与电子层（104,204）相关联的第一电极（110,210,410,510）的电子器件层（104,204,304,404,504） ，304,404,504），光学层（108,208,308,408,508），与所述光学层（108,208,308,408,508）508相关联的第二电极（112,212,412,512） ）和设置在第一和第二电极之间的绝缘体层（106,206,306,406,506）。 第一和第二电极彼此电容耦合以通过传输电子装置层（104,204,304,504）和光学层（108,208,308,408,508）之间的电通信来促进电子设备层 第一和第二电极之间的电信号。 电信号可以透过绝缘体层（106,206,306,406,506）传输。 另外，电子器件层（104,204,304,404,504）和光学层（108,208,308,408,508）可以通过第一电极（110,104）的电容耦合而彼此电连通， 210,410,510）和所述第二电极（112,212,412,512）。

    CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD
    42.
    发明申请
    CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 审中-公开
    联系人地平线设备，系统和方法

    公开(公告)号：WO2008048215A3

    公开(公告)日：2008-07-24

    申请号：PCT/US2006028299

    申请日：2006-07-21

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  STEWART DUNCAN ,  WU WEI

    Inventor： STEWART DUNCAN ,  WU WEI

    IPC: G03F7/00 ,  G03F7/20

    CPC classification number: G03F7/7035 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: A contact lithography apparatus (100,220), system (200) and method (300) use a deformation (320) to facilitate pattern transfer (300). The apparatus (100,220), system (200) and method 300 include a spacer (120,226) that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask (110,228a,222) and a substrate (130,228b,224), when in mutual contact with the spacer (120,226). One or more of the mask (110,228a,222), the substrate (130,228b,224) and the spacer (120,226) is deformable, such that deformation (320) thereof facilitates the pattern transfer (300).

    Abstract translation: 接触光刻设备（100,220），系统（200）和方法（300）使用变形（320）以便于图案转印（300）。 设备（100,220），系统（200）和方法300包括间隔物（120,226），其提供光刻元件的间隔开的平行和近端取向310，例如掩模（110,228a，222）和基底（130,228b， 224），当与间隔物（120,226）相互接触时。 掩模（110,228a，222），基板（130,228b，224）和间隔件（120,226）中的一个或多个可变形，使得其变形（320）有助于图案转印（300）。

    CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES
    46.
    发明申请
    CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
    量子阱介质中接触电阻的控制

    公开(公告)号：WO03100823A3

    公开(公告)日：2004-05-27

    申请号：PCT/GB0302186

    申请日：2003-05-21

    Applicant: INTENSE PHOTONICS LTD ,  NAJDA STEPHEN ,  MCDOUGALL STEWART DUNCAN ,  LIU XUEFENG

    Inventor： NAJDA STEPHEN ,  MCDOUGALL STEWART DUNCAN ,  LIU XUEFENG

    IPC: H01L21/00 ,  H01L21/18 ,  H01L33/00 ,  H01S5/34 ,  H01S5/343 ,  H01L21/285 ,  H01S5/02

    CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01L33/005 ,  H01S5/3414 ,  H01S5/343 ,  H01S5/34313

    Abstract: A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.

    Abstract translation: 在半导体器件结构中执行量子阱混合的方法使用在QWI处理之后去除的帽层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。 该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）对器件结构进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻工艺在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

    CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES
    47.
    发明申请
    CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
    量子阱介质器件接触电阻的控制

    公开(公告)号：WO2003100823A2

    公开(公告)日：2003-12-04

    申请号：PCT/GB2003/002186

    申请日：2003-05-21

    Applicant: INTENSE PHOTONICS LIMITED ,  NAJDA, Stephen ,  McDOUGALL, Stewart, Duncan ,  LIU, Xuefeng

    Inventor： NAJDA, Stephen ,  McDOUGALL, Stewart, Duncan ,  LIU, Xuefeng

    IPC: H01L

    CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01L33/005 ,  H01S5/3414 ,  H01S5/343 ,  H01S5/34313

    Abstract: A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.

    Abstract translation: 在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。 该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定的蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）在器件结构上执行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻程序在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

    DETECTION OF VAGINAL INFECTIONS
    48.
    发明申请
    DETECTION OF VAGINAL INFECTIONS 审中-公开
    检测阴道感染

    公开(公告)号：WO1996023900A1

    公开(公告)日：1996-08-08

    申请号：PCT/GB1996000203

    申请日：1996-01-30

    Applicant: CBL PRODUCTS LTD. ,  STEWART, Duncan ,  HIGGINS, John ,  SONNEX, Christopher

    Inventor： CBL PRODUCTS LTD.

    IPC: C12Q01/04

    CPC classification number: C12Q1/04

    Abstract: An electronics olfactory sensing system adapted to detect bacterial vaginosis has an olfactory sensing element. The olfactory sensing element has circuitry connected thereto for identifying amines characteristic of bacterial vaginosis. Means are provided for supplying vapours (2) from a sample (4) to the olfactory sensing element.

    Abstract translation: 适用于检测细菌性阴道炎的电子嗅觉感测系统具有嗅觉感测元件。 嗅觉感测元件具有连接到其上的电路，用于识别细菌性阴道病特征的胺。 提供了用于将蒸气（2）从样品（4）供应到嗅觉感测元件的装置。

    APPARATUS FOR THE DETECTION OF VOLATILE AMINES
    49.
    发明申请
    APPARATUS FOR THE DETECTION OF VOLATILE AMINES 审中-公开
    用于检测挥发性氨基酸的装置

    公开(公告)号：WO1994004916A1

    公开(公告)日：1994-03-03

    申请号：PCT/GB1993001678

    申请日：1993-08-09

    Applicant: CAMBRIDGE RESEARCH & INNOVATION LIMITED ,  BOLBOT, John, Anthony ,  D'COSTA, Eric, Joseph ,  SONNEX, Christopher ,  STEWART, Duncan

    Inventor： CAMBRIDGE RESEARCH & INNOVATION LIMITED

    IPC: G01N31/22

    CPC classification number: C12Q1/04 ,  C12Q2304/48 ,  G01N31/22 ,  G01N33/52 ,  G01N2001/028

    Abstract: Apparatus for detecting the presence of volatile amines in a sample is disclosed. The apparatus has a receptacle (6, 40) containing a test composition. A swab (10, 16, 58) brings a sample into contact with the test composition and an indicator substance (30, 44) is arranged to detect vapour arising as a result of reaction of the sample with the test composition and to change colour if said vapour contains volatile amines. The apparatus can be used in the diagnosis of bacterial vaginosis.

    Abstract translation: 公开了用于检测样品中挥发性胺的存在的装置。 该装置具有容纳测试组合物的容器（6,40）。 拭子（10,16,58）使样品与测试组合物接触，并且布置指示剂物质（30,44）以检测由于样品与测试组合物的反应而产生的蒸气，并且如果 所述蒸气含有挥发性胺。 该装置可用于诊断细菌性阴道炎。

    LIGHT-EMITTING DEVICES
    50.
    发明申请
    LIGHT-EMITTING DEVICES 审中-公开
    发光装置

    公开(公告)号：WO2010011207A1

    公开(公告)日：2010-01-28

    申请号：PCT/US2008/009077

    申请日：2008-07-25

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  FATTAL, David, A. ,  STEWART, Duncan

    Inventor： FATTAL, David, A. ,  STEWART, Duncan

    IPC: H01L33/00

    CPC classification number: H01L33/06 ,  H01L33/08

    Abstract: Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied.

    Abstract translation: 本发明的各种实施例涉及提供超过10G比特/秒的节能高速调制速率的半导体发光器件。 这些器件包括嵌入两个较厚的半导体层之间的发光层。 能量效率高的调制速率是由与发光层相邻的层组成的，这些半导体材料由具有电子状态的半导体材料构成，当电流为适当的发光电压时，有助于将载流子注入发光层进行发光 当施加适当的光熄灭电压时，施加并促进载体的去除。

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