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公开(公告)号：WO2016040925A1
公开(公告)日：2016-03-17
申请号：PCT/US2015/049917
申请日：2015-09-14
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC: G02B6/12
CPC classification number: G02B6/10 , G02B6/1221
Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.
Abstract translation: 提供了一种用于制造包括导光结构的结构的解决方案。 导光结构可以由氟聚合物基材料形成，并且包括一个或多个区域，每个区域填充有对具有目标波长的辐射如紫外线辐射透明的流体。 区域可以使用填料材料制成，填料材料至少基本上被含氟聚合物基材料包围，随后从每个区域移除。 该结构还可以包括集成到导光结构中的至少一个光学元件。
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公开(公告)号：WO2015157589A1
公开(公告)日：2015-10-15
申请号：PCT/US2015/025228
申请日：2015-04-10
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , SHATALOV, Maxim, S. , DOBRINSKY, Alexander , GASKA, Remigijus
IPC: H01L21/20
CPC classification number: H01L23/367 , H01L21/02428 , H01L21/0254 , H01L21/187 , H01L21/4871 , H01L21/76251 , H01L23/3732 , H01L23/3736 , H01L29/0676 , H01L29/2003 , H01L29/7786 , H01L33/007 , H01L33/0079 , H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
Abstract: A structured substrate configured for epitaxial growth of a semiconductor layer thereon is provided. Structures can be formed on a side of the structured substrate opposite that of the growth surface for the semiconductor layer. The structures can include cavities and/or pillars, which can be patterned, randomly distributed, and/or the like. The structures can be configured to modify one or more properties of the substrate material such that growth of a higher quality semiconductor layer can be obtained.
Abstract translation: 提供了构造成用于在其上外延生长半导体层的结构化衬底。 可以在结构化衬底的与半导体层的生长表面相反的一侧上形成结构。 该结构可以包括空腔和/或支柱，其可被图案化，随机分布和/或类似。 该结构可以被配置为修改衬底材料的一个或多个特性，使得可以获得更高质量的半导体层的生长。
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公开(公告)号：WO2015035132A1
公开(公告)日：2015-03-12
申请号：PCT/US2014/054240
申请日：2014-09-05
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SMETONA, Saulius , DOBRINSKY, Alexander , BETTLES, Timothy, James , BILENKO, Yuri , GASKA, Ignas , SHUR, Michael , GASKA, Remigijus
IPC: F21S2/00 , F21V7/00 , G02F1/13357 , G02B5/00
CPC classification number: A61L2/10 , A61L2202/14 , H05B33/0854 , H05B37/0227
Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.
Abstract translation: 提供了用于产生紫外线漫射辐射的解决方案。 扩散紫外线照射器包括位于反射腔内的至少一个紫外线辐射源，该反射腔包括多个表面。 多个表面中的至少一个可以被配置为扩散地反射至少70％的紫外线辐射，并且多个表面中的至少一个可被配置为透射至少30％的紫外线辐射并且反射至少10％ 的紫外线辐射。
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公开(公告)号：WO2014172052A2
公开(公告)日：2014-10-23
申请号：PCT/US2014/030962
申请日：2014-03-18
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： BEATTLES, Timothy, J. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
CPC classification number: A61L2/10 , A61L2202/14 , A61L2202/16
Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.
Abstract translation: 用于消毒可流动产品（例如液体，悬浮液，乳膏，胶体，乳液，粉末和/或类似物）以及与其相关的附件和产品（例如容器，盖， 提供使用紫外辐射的刷子，涂抹器和/或类似物。 在一个实施例中，紫外线不可透过的盖被构造成封闭对应于可流动产品的体积。 至少一个紫外辐射源可以安装在帽上并且被配置为产生紫外辐射以消毒封闭区域。 紫外线辐射源可以配置为当体积被紫外线防渗帽封闭时仅产生紫外辐射。
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45.发明申请
公开(公告)号：WO2014110195A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010770
申请日：2014-01-09
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHATALOV, Maxim, S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
CPC classification number: H01L33/0025 , H01L33/007 , H01L33/02 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2933/0033 , H01S5/021 , H01S5/0213 , H01S5/32341 , H01S2301/173
Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Abstract translation: 提供了包括部分松弛的半导体层的发光异质结构。 可以包括部分松弛的半导体层作为发光异质结构的接触半导体层的子层。 也可以在部分松弛的半导体层附近包括位错阻挡结构。
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Patent Agency Ranking
公开(公告)号：WO2014066301A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066035
申请日：2013-10-22
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： BILENKO, Yuri , SHUR, Michael , GASKA, Remigijus
CPC classification number: H01L33/52 , H01L24/81 , H01L24/94 , H01L27/15 , H01L33/60 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/1403 , H01L2224/16245 , H01L2224/81191 , H01L2224/94 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2933/0066 , H01L2924/00 , H01L2224/81
Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
Abstract translation: 提供了用于封装诸如发光二极管的两个终端设备的解决方案。 在一个实施例中，一种封装双端子器件的方法包括：图案化金属片以包括多个开口; 将至少一个两个端子装置接合到所述金属板，其中第一开口对应于所述至少一个两个端子装置的第一触点和第二触点之间的距离; 以及围绕所述至少一个两端子装置中的每一个切割金属片，其中所述金属片形成到所述第一接触件的第一电极和到所述第二接触件的第二电极。
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公开(公告)号：WO2014036137A1
公开(公告)日：2014-03-06
申请号：PCT/US2013/057077
申请日：2013-08-28
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , SHATALOV, Maxim, S. , BETTLES, Timothy, J. , BILENKO, Yuri , SMETONA, Saulius , DOBRINSKY, Alexander , GASKA, Remigijus
CPC classification number: A61L2/10 , A61L2202/14 , A61L2202/21 , F25D17/042 , F25D27/005 , F25D2317/0417
Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration, each of which can include a corresponding target wavelength rang and/or target intensity range.
Abstract translation: 紫外线辐射指向一个区域内。 在一段时间内监视位于该区域内的区域和/或该区域的一个或多个条件。 基于监测，通过调节由紫外线辐射源产生的紫外线辐射的方向，强度，图案和/或光谱功率来控制紫外线辐射源。 对紫外线辐射源的调整可以对应于多个可选操作配置中的一个，包括存储寿命保存操作配置，消毒操作配置和乙烯分解操作配置，每个操作配置可以包括相应的目标波长范围 和/或目标强度范围。
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公开(公告)号：WO2014036089A1
公开(公告)日：2014-03-06
申请号：PCT/US2013/056997
申请日：2013-08-28
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , SHATALOV, Maxim, S. , BETTLES, Timothy, J. , BILENKO, Yuri , DOBRINSKY, Alexander , SMETONA, Saulius , GASKA, Remigijus
CPC classification number: A61L2/10 , A61L2202/14
Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.
Abstract translation: 紫外线辐射指向一个区域内。 紫外线辐射源的目标波长范围和/或目标强度范围可以对应于包括病毒破坏操作配置和细菌消毒操作配置的多种可选操作配置中的至少一种。 每个配置可以包括目标波长范围和目标强度范围的独特组合。
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公开(公告)号：WO2014036080A9
公开(公告)日：2014-03-06
申请号：PCT/US2013/056983
申请日：2013-08-28
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： SHUR, Michael , SHATALOV, Maxim, S. , BETTLES, Timothy, J. , BILENKO, Yuri , SMETONA, Saulius , DOBRINSKY, Alexander , GASKA, Remigijus
Abstract: Ultraviolet radiation is directed within an area. The storage area is scanned and monitored for the presence of biological activity within designated zones. Once biological activity is identified, ultraviolet radiation is directed to sterilize and disinfect designated zones within the storage area.
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公开(公告)号：WO2013184654A1
公开(公告)日：2013-12-12
申请号：PCT/US2013/044065
申请日：2013-06-04
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： GAEVSKI, Mikhail , SIMIN, Grigory , SHATALOV, Maxim, S. , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC: H01L21/20 , H01L21/336 , H01L29/778
CPC classification number: H01L21/768 , H01L21/28575 , H01L21/28587 , H01L21/28593 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/452 , H01L33/38 , H01L2933/0016
Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。
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