公开(公告)号：KR1020070013509A

公开(公告)日：2007-01-31

申请号：KR1020050067876

申请日：2005-07-26

Applicant: 삼성전기주식회사

Inventor： 고주열 ,  최원태 ,  박득희 ,  강신재

IPC: H04N5/361 ,  H04N5/374

CPC classification number: H04N5/3745 ,  H04N5/361

Abstract: A unit pixel of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to compensate a dark current generated in a photo diode by detecting an output voltage of a drive transistor and supplying a compensation current to the photo diode when the output voltage is reduced at a predetermined level or less. A photo diode(PD) generates and stores an optical charge. A gate of a drive transistor(Q2) receives the charge stored in the photo diode(PD), and a source of the drive transistor(Q2) outputs the received charge as a voltage value. A drain of the drive transistor(Q2) receives a power supply voltage. A saturation sensing device having an inverter(21) and a feedback line(22) receives the source voltage of the drive transistor(Q2), and judges a current state as a saturation state when the source voltage is lower than a predetermined reference voltage. A switching transistor(Q4) short-circuits/opens connection of the power supply voltage and the gate of the drive transistor(Q2) according to the saturation state judgment of the saturation sensing device.

Abstract translation: 提供CMOS（互补金属氧化物半导体）图像传感器的单位像素，以通过检测驱动晶体管的输出电压并在输出电压降低时向光电二极管提供补偿电流来补偿光电二极管中产生的暗电流 在预定水平以下。 光电二极管（PD）产生并存储光电荷。 驱动晶体管（Q2）的栅极接收存储在光电二极管（PD）中的电荷，驱动晶体管（Q2）的源极将接收的电荷作为电压值输出。 驱动晶体管（Q2）的漏极接收电源电压。 具有反相器（21）和反馈线（22）的饱和感测装置接收驱动晶体管（Q2）的源极电压，并且当源极电压低于预定参考电压时，判断为饱和状态。 开关晶体管（Q4）根据饱和感测装置的饱和状态判断来短路/断开驱动晶体管（Q2）的电源电压和栅极的连接。

公开(公告)号：KR1020070008264A

公开(公告)日：2007-01-17

申请号：KR1020050063353

申请日：2005-07-13

Applicant: 삼성전기주식회사

Inventor： 박득희 ,  최원태 ,  강신재 ,  고주열

IPC: H04N5/365 ,  H04N5/3745

CPC classification number: H04N5/365 ,  H04N5/3745

Abstract: An image sensor array is provided to use a CMOS(Complementary Metal Oxide Semiconductor) transistor included in plural image sensors as a component for an operational amplifier, thereby removing fixed pattern noise. An image sensor array comprises plural image sensors(100a,100b) and a common output unit(200) for composing an operational amplifier. The plural image sensors(100a,100b) comprises the followings: a photodiode(PD); a drive transistor(M2) which is connected to the photodiode(PD) and operates as a source follower; and a select transistor(M3) which is connected with the drive transistor(M2) in parallel, and is turned on when a selection signal is applied, and then operates the drive transistor(M2). The common output unit(200) is commonly connected to the plural image sensors(100a,100b), and includes a common input terminal which is differentially combined with the drive transistor(M2) and the select transistor(M3) of each image sensor(100a,100b), and to which a switching control signal synchronized with the selection signal is applied. The common output unit(200) decides a drive transistor(M2) and a select transistor(M3) of an image sensor(100a,100b), to which the selection signal is applied among the plural image sensors(100a,100b), as the first input terminal and decides the common input terminal as the second input terminal. The common output unit(200) converts an electron generated in the photodiode(PD) into a voltage signal and outputs the voltage signal to an output unit.

Abstract translation: 提供图像传感器阵列以使用包含在多个图像传感器中的CMOS（互补金属氧化物半导体）晶体管作为运算放大器的组件，从而消除固定图案噪声。 图像传感器阵列包括用于组成运算放大器的多个图像传感器（100a，100b）和公共输出单元（200）。 多个图像传感器（100a，100b）包括：光电二极管（PD）; 驱动晶体管（M2），其连接到光电二极管（PD）并用作源极跟随器; 以及与驱动晶体管（M2）并联连接的选择晶体管（M3），在施加选择信号时导通，然后对驱动晶体管（M2）进行动作。 公共输出单元（200）通常连接到多个图像传感器（100a，100b），并且包括与驱动晶体管（M2）和每个图像传感器的选择晶体管（M3）差分地组合的公共输入端子 100a，100b），并且施加与选择信号同步的切换控制信号。 公共输出单元（200）决定在多个图像传感器（100a，100b）中施加了选择信号的图像传感器（100a，100b）的驱动晶体管（M2）和选择晶体管（M3）作为 第一输入端子并且将公共输入端子确定为第二输入端子。 公共输出单元（200）将在光电二极管（PD）中产生的电子转换为电压信号，并将该电压信号输出到输出单元。

公开(公告)号：KR1020060037693A

公开(公告)日：2006-05-03

申请号：KR1020040086726

申请日：2004-10-28

Applicant: 삼성전기주식회사

Inventor： 고주열 ,  강신재 ,  권경수

IPC: H01L31/00

CPC classification number: H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  Y02E10/50

Abstract: 본 발명에 따른 다파장 수광소자는 제 1 타입 기판; 상기 제 1 기판 상에 위치한 제 1 진성층(first intrinsic layer); 상기 제 1 진성층상에 위치한 고농도 제 2 타입 매립층(heavily-doped second-type buried-layer); 상기 고농도 제 2 타입 매립층상에 위치한 제 2 진성층(second intrinsic layer); 및 상기 제 2 진성층에 얕은 깊이로 형성된 다수의 고농도 제 1 타입 핑거(heavily-doped first-type finger);를 포함하고, 상기 제 1 타입과 제 2 타입은 도핑된 상태가 서로 반대의 타입인 것을 특징으로 한다.
다파장 수광소자, PD, PDIC, CD, DVD, BD