公开(公告)号：KR1019920001877B1

公开(公告)日：1992-03-06

申请号：KR1019880016826

申请日：1988-12-17

Applicant: 삼성전자주식회사

Inventor： 김효성

IPC: H01L21/00

Abstract: The hydric annealing method for removing an unstable coupling in the neighborhood of a boundary of silicon-metallic film or silicon- SiO2 film upon alloy process to stabilize device charactristics comprises the steps of saturating an heating furnace (10) as N2 gas; injecting pure H2 gas into the furnace (10) to anneal a wafer under H2 atmosphere; and supplying N2 gas into the furnace (10), exhausting the H2 has to the exterior of the furnace gradually and burning the H2 gas in advance by using a lighting means. The lighting means comprises a number of ignition coils (21,23,25) controlled by an ignition control means (20).

Abstract translation: 用于去除在合金工艺上的硅 - 金属膜或硅-SiO 2膜边界附近的不稳定耦合以稳定器件特性的水合退火方法包括将加热炉（10）饱和作为N 2气体的步骤; 将H 2气注入炉（10）中以在H2气氛下退火晶片; 向炉子（10）供给N 2气体后，向炉内排出H2，并且，通过使用照明装置，预先使H2气体燃烧。 照明装置包括由点火控制装置（20）控制的多个点火线圈（21,23,25）。