公开(公告)号：KR1020140099964A

公开(公告)日：2014-08-14

申请号：KR1020130012174

申请日：2013-02-04

Applicant: 스마트전자 주식회사 ,  아주대학교산학협력단

Inventor： 정종일 ,  강두원 ,  안규진 ,  진상준 ,  김현창 ,  이경미 ,  백창용 ,  우창수 ,  강태헌 ,  김창구 ,  조성운 ,  김준현

IPC: C23C16/448 ,  C23C16/44

Abstract: The present invention relates to a manufacturing method of a surge absorber. In particular, according to the manufacturing method of a surge absorber, a thin film with high purity can be formed as a conductive thin film is formed by a low pressure chemical vapor deposition. Numerical ranges, in which critical threshold of pressure, the deposition temperature, a flow volume ratio, and deposition time in a reactor are recognized, are suggested by the present invention. Therefore, a response speed of the surge absorber can be maximized, and an efficiency of a process can be increased.

Abstract translation: 本发明涉及浪涌吸收器的制造方法。 特别地，根据浪涌吸收体的制造方法，可以通过低压化学气相沉积形成导电薄膜，形成高纯度的薄膜。 本发明提出了数值范围，其中压力的临界阈值，沉积温度，流动体积比和反应器中的沉积时间被识别。 因此，浪涌吸收器的响应速度可以最大化，并且可以提高处理的效率。