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公开(公告)号：KR101282775B1
公开(公告)日：2013-07-05
申请号：KR1020060108217
申请日：2006-11-03
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
IPC: H01L33/02
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/32
Abstract: 본 발명은 수직형 발광 소자 및 그 제조방법에 관한 것으로 특히, 발광 소자의 발광 효율과 신뢰성을 향상시킬 수 있는 수직형 발광 소자 및 그 제조방법에 관한 것이다. 이러한 본 발명은, 발광 소자에 있어서, 제1전도성 반도체층과; 상기 제1전도성 반도체층 상에 위치하는 발광층과; 상기 발광층 상에 위치하며, 식각장벽층을 포함하는 제2전도성 반도체층을 포함하여 구성되는 것이 바람직하다.
발광 소자, 식각, 광추출 구조, 광전화학, LED.-
公开(公告)号：KR1020130022938A
公开(公告)日：2013-03-07
申请号：KR1020110085987
申请日：2011-08-26
Applicant: 엘지이노텍 주식회사
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32
Abstract: PURPOSE: A light emitting device is provided to improve light output efficiency by reducing an operation voltage and minimizing a leakage current. CONSTITUTION: An active layer(124) includes a quantum barrier and a quantum well. A first conductive semiconductor layer(122) is formed on one side of the active layer. A second conductive semiconductor layer(126) is formed on the other side of the active layer. The first conductive semiconductor layer or the second semiconductor layer includes a barrier layer(121). The barrier layer includes a plurality of barrier layers and a base layer formed between the plurality of barrier layers. The barrier layers includes a first section(301) in which an energy band gap increases, and a second section(302) in which the energy band gap decreases.
Abstract translation: 目的：提供一种发光器件，通过降低工作电压和最小化漏电流来提高光输出效率。 构成：活性层（124）包括量子势垒和量子阱。 第一导电半导体层（122）形成在有源层的一侧上。 第二导电半导体层（126）形成在有源层的另一侧上。 第一导电半导体层或第二半导体层包括阻挡层（121）。 阻挡层包括多个阻挡层和形成在多个阻挡层之间的基底层。 阻挡层包括能带隙增加的第一部分（301）和能带隙减小的第二部分（302）。
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公开(公告)号：KR101231477B1
公开(公告)日：2013-02-07
申请号：KR1020110067691
申请日：2011-07-08
Applicant: 엘지이노텍 주식회사
IPC: H01L33/22
Abstract: 실시예는 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템에 관한 것이다.
실시예에 따른 발광소자는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형 제2 반도체층; 상기 제2 도전형 제2 반도체층 상에 돌출부를 포함하는 신뢰성 강화층; 및 상기 신뢰성 강화층신뢰성 강화층형 제3 반도체층;을 포함한다.-
公开(公告)号：KR1020120135787A
公开(公告)日：2012-12-17
申请号：KR1020110054695
申请日：2011-06-07
Applicant: 엘지이노텍 주식회사
IPC: H01L33/22
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to uniformly inject a carrier by forming a porosity graphene layer on first and second conductive semiconductor layers. CONSTITUTION: A porosity graphene layer(128) is formed within a first conductivity type semiconductor layer(122) and a second conductivity type semiconductor layer(126). The porosity graphene layer comprises porosity formed on a carbon film. The diameter of the porosity formed on the porosity graphene layer is 5nm to 5μm. The porosity of the porosity graphene layer is formed through a mask formation process and an etching process. The porosity of the porosity graphene layer is formed into a periodic pattern or an aperiodic pattern.
Abstract translation: 目的：提供一种发光器件及其制造方法，以在第一和第二导电半导体层上形成孔隙度石墨烯层来均匀地注入载体。 构成：孔隙度石墨烯层（128）形成在第一导电类型半导体层（122）和第二导电类型半导体层（126）内。 孔隙度石墨烯层包括形成在碳膜上的孔隙。 在孔隙度石墨烯层上形成的孔隙的直径为5nm至5μm。 通过掩模形成工艺和蚀刻工艺形成孔隙度石墨烯层的孔隙率。 孔隙度石墨烯层的孔隙率形成为周期性图案或非周期性图案。
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公开(公告)号：KR101210646B1
公开(公告)日：2012-12-07
申请号：KR1020060042861
申请日：2006-05-12
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
Abstract: 본발명은수직형발광소자에관한것으로특히, 높은전도성을갖는고품위반도체박막을갖는수직형발광소자및 그제조방법에관한것이다. 이러한본 발명은, 제1전극과; 상기제1전극위에위치하는제1전도성층과; 상기제1전도성층위에위치하는활성층과; 상기활성층위에위치하며, 적어도하나이상의반도체층과, 적어도하나이상의전도성반도체층을포함하는제2전도성층과; 상기제2전도성층위에위치하는제2전극을포함하여구성되는것이바람직하다.
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Patent Agency Ranking
公开(公告)号：KR101198759B1
公开(公告)日：2012-11-12
申请号：KR1020070055360
申请日：2007-06-07
Applicant: 엘지전자 주식회사 , 엘지이노텍 주식회사
Inventor： 문용태
Abstract: 본 발명은 질화물계 발광 소자에 관한 것으로 특히, 발광 소자의 발광 효율과 신뢰성을 향상시킬 수 있는 질화물계 발광 소자에 관한 것이다. 이러한 본 발명은, 질화물계 발광 소자에 있어서, 제1양자장벽층과; 상기 제1양자장벽층 상에 위치하는 응력완화층과; 상기 응력완화층 상에 위치하는 제2양자장벽층과; 상기 제2양자장벽층 상에 위치하는 양자우물층과; 상기 양자우물층 상에 위치하는 제1양자장벽층으로 이루어지는 적어도 하나 이상의 양자우물구조를 포함하여 구성되는 것이 바람직하다.
발광 소자, 양자우물, 응력, 질화물, LED.-
公开(公告)号：KR1020120053190A
公开(公告)日：2012-05-25
申请号：KR1020100114334
申请日：2010-11-17
Applicant: 엘지이노텍 주식회사
IPC: H01L33/04
Abstract: PURPOSE: A light emitting device is provided to increase external extraction efficiency of light generated from an active layer by forming an uneven part on the surface of a first conductive semiconductor layer using a PEC(Photo Enhanced Chemical) etching method. CONSTITUTION: A first conductive semiconductor layer with an open surface is formed on a substrate. A super lattice layer group including two super lattice layers or more is formed on the first conductive semiconductor layer. An active layer is formed on the super lattice layer group. A second conductive semiconductor layer is formed on the active layer. An energy band gap of the super lattice layer near the active layer is smaller than the energy band gap of the super lattice layer near the first conductive semiconductor layer.
Abstract translation: 目的：提供一种发光器件，通过使用PEC（Photo Enhanced Chemical）蚀刻方法在第一导电半导体层的表面上形成不均匀部分，以增加由有源层产生的光的外部提取效率。 构成：在基板上形成具有开口表面的第一导电半导体层。 在第一导电半导体层上形成包括两层以上的超晶格层以上的超晶格层组。 在超晶格层组上形成有源层。 在有源层上形成第二导电半导体层。 有源层附近的超晶格层的能带隙比第一导电半导体层附近的超晶格层的能带隙小。
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公开(公告)号：KR1020120007383A
公开(公告)日：2012-01-20
申请号：KR1020100068122
申请日：2010-07-14
Applicant: 엘지이노텍 주식회사
Inventor： 문용태
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/20 , H01L2924/12041
Abstract: PURPOSE: An light emitting device is provided to reduce non-emitting loss due to a crystal defect while reducing auger non-emitting loss in applying a high current. CONSTITUTION: An active layer is formed between a first conductive semiconductor layer(105) and a second conductive semiconductor layer(109). The active layer includes a first quantum-well layer(107a) neighboring the first conductive semiconductor layer and a second quantum-well layer(107f) neighboring the second conductive semiconductor layer. The second quantum-well layer is formed to be thinner than the first quantum-well layer. The second quantum-well layer includes two or more quantum-well layers which are formed to have the same thickness. A quantum wall(107b) is formed between the first quantum-well layer and the second quantum-well layer.
Abstract translation: 目的：提供发光装置，以减少由于晶体缺陷引起的不发射损失，同时在施加高电流的同时减少螺旋钻不发射损失。 构成：在第一导电半导体层（105）和第二导电半导体层（109）之间形成有源层。 有源层包括邻近第一导电半导体层的第一量子阱层（107a）和与第二导电半导体层相邻的第二量子阱层（107f）。 第二量子阱层形成为比第一量子阱层薄。 第二量子阱层包括形成为具有相同厚度的两个或多个量子阱层。 在第一量子阱层和第二量子阱层之间形成量子壁（107b）。
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公开(公告)号：KR101011757B1
公开(公告)日：2011-02-07
申请号：KR1020100032558
申请日：2010-04-09
Applicant: 엘지이노텍 주식회사
Inventor： 문용태
IPC: H01L33/08
CPC classification number: H01L33/08 , H01L33/32 , H01L33/50 , H01L2224/48091 , H01L2924/00014
Abstract: PURPOSE: A light emitting device, a manufacturing method thereof, and a light emitting package are provided to improve light efficiency by reflecting light generated from the light emitting device by a first electrode layer and a second electrode layer. CONSTITUTION: An active layer is formed on a first conductive semiconductor layer and emits light of a first wavelength region. A second conductive semiconductor layer(130) is formed on the active layer and includes a second electrode. A light re-emitting layer(140) is formed on the second conductive semiconductor and is comprised of a nitride semiconductor. The light re-emitting layer absorbs the light of the first wavelength region and emits light of a second wavelength. The light re-emitting layer is comprised of multi layer with different In compositions. The layer with the largest In is formed on the uppermost part of the light re-emitting layer.
Abstract translation: 目的：提供发光器件及其制造方法和发光封装，以通过由第一电极层和第二电极层反射从发光器件产生的光来提高光效率。 构成：在第一导电半导体层上形成有源层并发射第一波长区域的光。 第二导电半导体层（130）形成在有源层上并且包括第二电极。 在第二导电半导体上形成光再发射层（140），并由氮化物半导体构成。 光再发射层吸收第一波长区域的光并发射第二波长的光。 光再发射层由具有不同In组成的多层组成。 具有最大In的层形成在光再发射层的最上部。
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公开(公告)号：KR1020100096927A
公开(公告)日：2010-09-02
申请号：KR1020090016020
申请日：2009-02-25
Applicant: 엘지이노텍 주식회사
Inventor： 문용태
CPC classification number: H01L33/0079 , H01L21/0237 , H01L21/02483 , H01L21/02538 , H01L21/0254 , H01L21/02614 , H01L33/007
Abstract: PURPOSE: A method for fabricating a light emitting device is provided to effectively separate a nitride semiconductor thin film from a substrate. CONSTITUTION: A gallium oxide layer is formed. A first electrical conductive semiconductor layer(110), an active layer(120), and a second electrical conductive semiconductor layer(130) are formed on the gallium oxide layer. A conductive board(200) is formed on a second conductive semiconductor layer. The gallium oxide layer is separated from the electrical conductive semiconductor layer. The first electrode(150) is formed on the first electrical conductive semiconductor layer.
Abstract translation: 目的：提供一种制造发光器件的方法，以有效地将氮化物半导体薄膜与衬底分离。 构成：形成氧化镓层。 在氧化镓层上形成第一导电半导体层（110），有源层（120）和第二导电半导体层（130）。 导电板（200）形成在第二导电半导体层上。 氧化镓层与导电半导体层分离。 第一电极（150）形成在第一导电半导体层上。
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