Abstract:
In one embodiment, the present invention relates to a method of processing an ultra-thin resist (16), involving the steps of depositing the ultra-thin resist (16) over a semiconductor substrate (12), the ultra-thin resist (16) having a thickness less than about 3,000Å; irradiating the ultra-thin resist (16) with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist (16); and contacting the ultra-thin resist (16) with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist (16) with the silicon containing compound is conducted between irradiating and developing the utra-thin resist (16) or after developing the ultra-thin resist (16).
Abstract:
The present invention relates to illuminating an interior portion of a processing chamber (120, 220) in a semiconductor processing system (102). A fiber optic light source (110, 210) is operatively associated with the processing chamber (120, 220) to illuminate the interior of the processing chamber (120, 220) to facilitate viewing the interior of the processing chamber (120, 220).