公开(公告)号：EP1490901A1

公开(公告)日：2004-12-29

申请号：EP02787066.6

申请日：2002-12-20

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： WIECZOREK, Karsten ,  KAHLERT, Volker ,  HORSTMANN, Manfred

IPC: H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/76841 ,  H01L29/4933 ,  H01L29/665

Abstract: A layer stack (220) comprising at least three material layers (221, 222, and 223) is provided on a silicon-containing conductive region to form a silicide portion (208) on and in the silicon-containing conductive region, wherein the layer (221) next to the silicon provides the metal atoms for the silicide reaction, the intermediate layer (222) is a metal-nitrogen-compound formed by supplying a nitrogen containing as during deposition, and for formation of the top layer (223), supply for said gas is discontinued. The method may be carried out as an in situ method, thereby significantly improving throughput and deposition tool performance compared to typical prior art processes, in which at least two deposition chambers have to be used