Abstract:
A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300°C) which is within the range of +/- 20x10 -7 /°C of the linear coefficient thermal of expansion of the germanium first layer.
Abstract:
A multi-layer electrode includes a current collector having opposing first and second major surfaces, a fused carbon layer formed over one or both of the major surfaces, a conductive adhesion layer formed over each fused carbon layer, and an activated carbon layer formed over each conductive adhesive layer. The multi-layer electrode can be incorporated into a high energy density, high power density device such as an electric double layer capacitor.
Abstract:
A method for producing a low oxygen content activated carbon material includes heating a natural, non-lignocellulosic carbon precursor in an inert or reducing atmosphere to form a first carbon material, mixing the first carbon material with an inorganic compound to form an aqueous mixture, heating the aqueous mixture in an inert or reducing atmosphere to incorporate the inorganic compound into the first carbon material, removing the inorganic compound from the first carbon material to produce a second carbon material, and heating the second carbon material in an inert or reducing atmosphere to form the low oxygen content activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.
Abstract:
A sorbent structure comprising a continuous activated carbon body in the form of a flow-through substrate; and an additive provided on the flow-through substrate, wherein the additive is capable of enhancing the sorption of CO2 on the sorbent structure. Methods of making the sorbent structure, its use for CO2 capture, and methods for regenerating the structure for further use.
Abstract:
This invention describes a composition and article for a honeycomb body using dielectric drying. The composition comprises a refractory material and a pore former comprising activated carbon. The activated carbon pore former improves efficiency of dielectric drying, increases penetration depth, accelerates volatilization of the pore former, and reduces cracking of the green body.
Abstract:
A flexible substrate is described herein which is made from a freestanding inorganic material (e.g., mica paper, carbon paper, glass fiber paper) with pores/interstices that have been impregnated with a special impregnating material (e.g., silsesquioxane, alkali silicate glass with weight ratio of SiO 2 /X 2 O (X is alkali Na, K etc.) between 1.6-3.5). In one embodiment, the flexible substrate is made by: (1) providing a freestanding inorganic material; (2) providing an impregnating material; (3) impregnating the pores/interstices within the freestanding inorganic material with the impregnating material; and (4) curing the freestanding inorganic material with the impregnated pores/interstices to form the flexible substrate. The flexible substrate is typically used to make a flexible display or a flexible electronic.
Abstract:
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
Abstract:
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers According to one embodiment of the invention, a semiconductor-on- insulator structure has a first layer including a semiconductor material (110), attached to a second layer including a glass or glass-ceramic (120), with the strain point of the glass or glass-ceramic equal to or greater than about 8000C.