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    41.
    发明专利
    未知

    公开(公告)号：SE325642B

    公开(公告)日：1970-07-06

    申请号：SE567565

    申请日：1965-04-29

    Applicant: DANFOSS AS

    Inventor： JENSEN A

    IPC: H01L45/00 ,  H01L9/00

    Abstract: 1,083,154. Semi-conductor devices. DANFOSS A.S. April 23, 1965 [May 5, 1964], No. 17254/65. Heading H1K. A switching arrangement comprises at least two junctionless non-rectifying semi-conductor switching devices formed in a single element of polycrystalline material. As shown, Fig. 1, three independent switches comprise a metal plate 1 which acts as a common electrode, a layer of polycrystalline switching material and three electrodes 3, 4, 5. In a second embodiment, Fig. 2 (not shown), a metal electrode layer (16) is applied to the top surface of a polycrystalline layer and is then divided into two electrodes (16a, 16b). When the first switch has been fired the circuit path (18) between electrode (16a) and common electrode (14) occurs near the dividing line so that application of a voltage below the threshold voltage to electrode (16b) allows the second switch to fire. In another embodiment, Fig. 3 (not shown), the polycrystalline material is cast round pairs of electrodes (20, 21; 22, 23). In a further embodiment, Figs. 4 and 5 (not shown), two electrode structures comprising a plurality of strip conductors (27, 29) located in grooves in insulating plates (26, 30) are arranged in contact with opposite sides of a polycrystalline layer (28) so that the sets of electrodes cross at right angles forming a matrix of switching elements. The polycrystalline material may comprise 67À5% Te, 25% As, 7À5% Ge applied by vaporization, sintering, or solidification from a melt. This material becomes conductive when its threshold voltage is exceeded and returns to its high resistance condition when the current falls to zero. Alternatively the material may be 90% Te, 10% Ge which becomes conductive when its threshold voltage is exceeded but maintains this low resistance condition even when the current falls to zero. The material may be returned to the high resistance condition by applying a current or current pulse, of either polarity, above a threshold value.

    42.
    发明专利
    未知

    公开(公告)号：DK117306B

    公开(公告)日：1970-04-13

    申请号：DK448163

    申请日：1963-09-24

    Applicant: DANFOSS AS

    Inventor： JENSEN A

    IPC: H03K6/06

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