SEMICONDUCTIVE SHIELD FREE OF WELD LINES AND PROTRUSIONS
    45.
    发明申请
    SEMICONDUCTIVE SHIELD FREE OF WELD LINES AND PROTRUSIONS 审中-公开
    半导体屏蔽没有焊接线和突起

    公开(公告)号:WO2018000314A1

    公开(公告)日:2018-01-04

    申请号:PCT/CN2016/087870

    申请日:2016-06-30

    Abstract: Semiconductive shield layers for power cable constructions are made from a composition comprising: (A) A nonpolar, ethylene-based polymer having a density of greater than (>) 0.90 g/cc and a melt index of >20 g/10 min at 190℃/2.16 Kg; (B) A polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms; (C) Acetylene carbon black; and (D) A curing agent; with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.

    Abstract translation: 用于电力电缆结构的半导体屏蔽层由包含以下成分的组合物制成:(A)非极性的基于乙烯的聚合物,其密度大于(>)0.90g / cc,熔体指数 在190℃/ 2.16Kg下> 20g / 10分钟; (B)由乙烯和碳原子数为4〜20的不饱和烷基酯构成的极性聚合物, (C)乙炔炭黑; 和(D)固化剂; 条件是(1)组合物具有相分离结构,和(2)非极性聚合物与极性聚合物的重量比为0.25-4。

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