公开(公告)号：JP2012083730A

公开(公告)日：2012-04-26

申请号：JP2011197410

申请日：2011-09-09

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/20 ,  C07C2604/00 ,  C07D209/70 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/32 ,  G03F7/325 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/0275 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/128

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, a chemically amplified resist composition and a resist film which satisfy high sensitivity, high resolution, excellent roughness performance and excellent dry etching resistance, and further have excellent developing time dependency.SOLUTION: The negative pattern forming method includes: (1) a step of forming a film from a chemically amplified resist composition containing (A) a fullerene derivative having an acid decomposable group, (B) a compound which generates an acid by irradiation of active rays or radiation and (C) a solvent; (2) a step of exposing the film; and (3) a step of developing the film using a developer containing an organic solvent.

Abstract translation: 要解决的问题：提供满足高灵敏度，高分辨率，优异的粗糙性能和优异的耐干蚀刻性的图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜，并且还具有优异的显影时间依赖性。 阴性图案形成方法包括：（1）从化学放大抗蚀剂组合物形成膜的步骤，所述化学放大抗蚀剂组合物含有（A）具有酸可分解基团的富勒烯衍生物，（B）通过以下步骤产生酸的化合物： 照射活性射线或辐射，（C）溶剂; （2）曝光胶片的步骤; 和（3）使用含有有机溶剂的显影剂显影该膜的步骤。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012027438A

公开(公告)日：2012-02-09

申请号：JP2011029622

申请日：2011-02-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  DOBASHI TORU ,  FUJII KANA

IPC: G03F7/038 ,  C08F220/28 ,  C08F232/00 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24479

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in sensitivity, limit resolution, roughness properties, exposure latitude (EL), post exposure bake (PEB) temperature dependency and depth of focus (DOF), and a resist composition.SOLUTION: A pattern forming method of the invention comprises: (A) forming a film using a resin-containing resist composition, which includes a repeating unit with a group that is decomposed by an action of an acid to produce an alcoholic hydroxy group and in which its solubility in a developer containing an organic solvent decreases by an action of an acid; (B) exposing the film; and (C) developing the exposed film using a developer containing an organic solvent.

Abstract translation: 要解决的问题：提供灵敏度，极限分辨率，粗糙度特性，曝光宽容度（EL），曝光后烘烤（PEB）温度依赖性和聚焦深度（DOF）以及抗蚀剂组合物优异的图案形成方法 。 解决方案：本发明的图案形成方法包括：（A）使用含树脂的抗蚀剂组合物形成膜，该组合物包括具有通过酸作用分解的基团的重复单元以产生醇羟基 并且其中在含有机溶剂的显影剂中的溶解度通过酸的作用而降低; （B）曝光胶片; 和（C）使用含有有机溶剂的显影剂显影曝光的薄膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011197587A

公开(公告)日：2011-10-06

申请号：JP2010067075

申请日：2010-03-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  IWATO KAORU

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method with the excellent exposure latitude (EL) and focus margin (DOF) capable of reducing the line width irregularity (LWR) and residual defect, a chemically amplified resist composition and a resist film.SOLUTION: The pattern forming method includes: (α) a step of forming a film with a substantially alkaline-insoluble resin (A) with a polarity increased by action of an acid for reducing the solubility to a developing solution including an organic solvent, a nonionic compound (B) for generating an acid by radiation of an active ray or a radioactive, and a chemically amplified resist composition (C) including a solvent; (β) a step of exposing the film; and (γ) a step of developing the film with a developing solution including an organic solvent. Also, a chemically amplified resist composition used for the pattern forming method, and a resist film formed with the chemically amplified resist composition are provided.

Abstract translation: 要解决的问题：提供能够降低线宽不规则（LWR）和残留缺陷的优异的曝光宽容度（EL）和聚焦余量（DOF）的图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜。 图案形成方法包括：（α）通过用于降低对包含有机溶剂的显影溶液的溶解性的酸的作用而使具有极性增加的基本上不溶于碱的树脂（A）的膜形成膜的步骤，非离子表面活性剂 通过活性射线或放射性辐射产生酸的化合物（B）和包含溶剂的化学放大抗蚀剂组合物（C）; （β）暴露薄膜的步骤; 和（γ）用包含有机溶剂的显影液显影该膜的步骤。 此外，提供了用于图案形成方法的化学放大抗蚀剂组合物和形成有化学放大抗蚀剂组合物的抗蚀剂膜。

公开(公告)号：JP2011118335A

公开(公告)日：2011-06-16

申请号：JP2010076454

申请日：2010-03-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YOSHITOME MASAHIRO ,  HIRANO SHUJI ,  SAEGUSA HIROSHI ,  IWATO KAORU ,  IIZUKA YUSUKE

IPC: G03F7/039 ,  C08F220/24 ,  C08F220/28 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0046 ,  G03F7/0758 ,  G03F7/2041 ,  G03F7/38 ,  Y10S430/108 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having good pitch dependence and coverage dependence of CD and a resist pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin increasing the solubility in an alkali developer by the action of an acid, the resin containing a repeating unit (a) having a cyano group and a group decomposing by the action of an acid to be made alkali-soluble; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin having at least either a fluorine atom or a silicon atom and a group decomposing by the action of an alkali developer to increase the solubility in an alkali developer. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有良好的螺距依赖性和CD的覆盖度依赖性的光化射线敏感或辐射敏感性树脂组合物和使用其的抗蚀剂图案形成方法。 光敏性或辐射敏感性树脂组合物包括：（A）通过酸作用增加在碱性显影剂中的溶解性的树脂，含有具有氰基的重复单元（a）的树脂 和通过酸的作用分解成碱溶性的基团; （B）在用光化射线或辐射照射时产生酸的化合物; 和（C）至少具有氟原子或硅原子的树脂和通过碱显影剂的作用分解的基团，以提高在碱性显影剂中的溶解度。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011118318A

公开(公告)日：2011-06-16

申请号：JP2009281058

申请日：2009-12-10

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HIRANO SHUJI ,  IWATO KAORU ,  SAEGUSA HIROSHI ,  IIZUKA YUSUKE

IPC: G03F7/039 ,  C08F20/10 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition allowing formation of a resist pattern, which is improved in elution of an acid, line edge roughness, reduction of development defects and scum generation, shows good followability for an immersion liquid in liquid immersion exposure, and further has various favorable performances in terms of particle suppression, a pattern profile and bubble defect prevention, and to provide a method of forming a pattern by using the actinic ray-sensitive or radiation-sensitive resin composition.
SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: resin (A) capable of increasing the solubility with an alkali developing solution by an action of an acid; and resin (C) having at least either a fluorine atom or a silicon atom and containing repeating unit (c) having at least two polarity conversion groups.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供允许形成抗蚀剂图案的光化学射线敏感或辐射敏感性树脂组合物，其提高了酸的洗脱，线边缘粗糙度，减少显影缺陷和浮渣产生，显示出 液浸式浸渍液中的浸渍液的良好追随性，进一步在粒子抑制，图案形状和气泡缺陷防止方面具有各种有利的性能，并且提供通过使用光化射线敏感或辐射照射形成图案的方法， 敏感树脂组合物。 光敏射线敏感性或辐射敏感性树脂组合物含有：能够通过酸作用增强与碱性显影液的溶解性的树脂（A） 和至少具有氟原子或硅原子的含有至少具有两个极性转换基团的重复单元（c）的树脂（C）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011053363A

公开(公告)日：2011-03-17

申请号：JP2009200909

申请日：2009-08-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  IIZUKA YUSUKE ,  SAEGUSA HIROSHI ,  HIRANO SHUJI ,  FUKUHARA TOSHIAKI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition useful to form a fine pattern in semiconductor manufacturing and remarkably reducing pattern collapse, development defects, liquid immersion defects (residual water defects, bubble defects) and scum, and a pattern forming method using the same. SOLUTION: The actinic ray- or radiation-sensitive resin composition is characterized in that a receding contact angle of water at a surface of a film formed of the actinic ray- or radiation-sensitive resin composition is ≥65°, and a receding contact angle of water at a surface of the film processed with an alkali developer is ≤35°. The pattern forming method using the same is also provided. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供可用于在半导体制造中形成精细图案的光化射线或辐射敏感性树脂组合物，并且显着降低图案崩溃，显影缺陷，液浸缺陷（残留水缺陷，气泡缺陷）和 浮渣和使用其的图案形成方法。 光化射线或辐射敏感性树脂组合物的特征在于，由光化射线或辐射敏感性树脂组合物形成的膜的表面处的水的后退接触角为≥65°， 用碱性显影剂处理的膜表面的水的后退接触角≤35°。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011002805A

公开(公告)日：2011-01-06

申请号：JP2009281055

申请日：2009-12-10

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SAEGUSA HIROSHI ,  IWATO KAORU ,  HIRANO SHUJI ,  IIZUKA YUSUKE

IPC: G03F7/039 ,  C08F20/28 ,  G03F7/004 ,  G03F7/075 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition, capable of forming a resist pattern improved in the elution of a generated acid, line edge roughness, development defects and generation of scums, less liable to profile degradation, and having proper conformability with an immersion liquid in immersion exposure, and to provide a pattern forming method that uses the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin, capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit, having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom. The pattern forming method that uses the composition is also provided.

Abstract translation: 要解决的问题：为了提供能够形成抗蚀剂图案的光化学射线敏感或辐射敏感性树脂组合物，其能够改善所产生的酸的洗脱，线边缘粗糙度，显影缺陷和浮渣的产生，不易形成轮廓退化 并且具有与浸渍曝光中的浸渍液体适当的一致性，并且提供使用该组合物的图案形成方法。解决方案：光化射线敏感或辐射敏感性树脂组合物包括：（A）能够增加 通过酸的作用在碱性显影剂中的溶解度，（B）在用光化射线或辐射照射时能够产生酸的化合物，和（C）含有（c）重复单元的树脂，其具有至少一个 极性转换基团，并且具有氟原子或硅原子中的至少一个。 还提供了使用该组合物的图案形成方法。

公开(公告)号：JP2010250063A

公开(公告)日：2010-11-04

申请号：JP2009099215

申请日：2009-04-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SUGIYAMA SHINICHI ,  HIRANO SHUJI ,  IIZUKA YUSUKE ,  IWATO KAORU ,  SAEGUSA HIROSHI

IPC: G03F7/004 ,  C08F20/26 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an active ray sensitive or radiation sensitive resin composition which allows formation of a pattern having good properties of PEBS (post exposure bake sensitivity), MEEF (mask error enhancement factor), coverage dependence and bridge defects, and to provide a method for forming a pattern by using the composition. SOLUTION: The composition includes (A) a resin the solubility of which with an alkali developing solution is increased by an action of an acid, (B) a compound generating an acid by irradiation with active rays or radiation, and (C) a resin, which contains a repeating unit having a polarity converting group that is decomposed by an action of an alkali developing solution to increase the solubility with an alkali developing solution, and which contains at least either a fluorine atom or a silicon atom, wherein the composition contains as the compound (B), a compound that generates an acid expressed by general formula (I) by irradiation with active rays or radiation. In general formula (I), each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom; R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or a group selected from alkyl groups substituted with at least one fluorine atom, and when a plurality of R 1 or R 2 are present, the respective groups may be identical or different from one another; L represents a divalent linking group and when a plurality of L are present, they may be identical or different from one another; A represents a group having a cyclic structure; x represents an integer of 1 to 20; y represents an integer of 0 to 10; and z represents an integer of 0 to 10. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够形成具有良好PEBS性质（曝光后感光度），MEEF（掩模误差增强因子），覆盖度依赖性和桥接缺陷的图案的活性射线敏感或辐射敏感性树脂组合物 并且提供通过使用该组合物形成图案的方法。 该组合物包含（A）通过酸的作用使其与碱性显影液的溶解度增加的树脂，（B）通过用活性射线或辐射照射产生酸的化合物和（C ）树脂，其含有具有通过碱显影液的作用分解的极性转换基的重复单元，以增加与碱性显影液的溶解度，并且至少含有氟原子或硅原子，其中 组合物含有化合物（B），通过用活性射线或辐射照射产生由通式（I）表示的酸的化合物。 在通式（I）中，Xf各自独立地表示氟原子或被至少一个氟原子取代的烷基; R 1 和R 2 各自独立地表示氢原子，氟原子，烷基或选自被至少一个氟原子取代的烷基的基团， 存在多个R 1 或R 2 ，各个组可以相同或不同; L表示二价连接基团，当存在多个L时，它们可以相同或不同; A表示具有环状结构的基团; x表示1〜20的整数， y表示0〜10的整数， z表示0〜10的整数。（C）2011，JPO＆INPIT

公开(公告)号：JP2009215352A

公开(公告)日：2009-09-24

申请号：JP2008057615

申请日：2008-03-07

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  INABE HARUKI

IPC: C09D125/02 ,  C08F12/22 ,  C08F38/00 ,  C09D4/00 ,  C09D5/00 ,  C09D7/12 ,  C09D149/00 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a film forming composition (coating liquid) can form an insulated film with a low dielectric constant, the excellent mechanical strength and a good surface property, and an electronic device using the composition. SOLUTION: The film forming composition includes a polymer of a substituted styrene derivative represented by formula (1), (wherein R 1 is a hydrogen atom, an alkyl group or an aryl group, R 2 is a hydrogen atom, an alkyl group or an aryl group, R 3 is an alkyl group, an aryl group, an alkoxy group, an acyloxy group, an aryloxy group, a hydroxy group, a carboxyl group, an alkoxy carbonyl group, an aryloxycarbonyl group, a trialkylsilyl group or a triarylsilyl group, in the case R 3 is present by plurality, they may be either same or different, and they may be coupled with each other to form a ring structure, and n is an integer or 0-4). COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供成膜组合物（涂布液）可以形成具有低介电常数，优异的机械强度和良好的表面性能的绝缘膜，以及使用该组合物的电子器件。 解决方案：成膜组合物包括由式（1）表示的取代的苯乙烯衍生物的聚合物，其中R 1是氢原子，烷基或芳基， SP> 2 是氢原子，烷基或芳基，R 3是烷基，芳基，烷氧基，酰氧基，芳氧基， 羟基，羧基，烷氧基羰基，芳氧基羰基，三烷基甲硅烷基或三芳基甲硅烷基，在R 3中，多个存在，它们可以相同或不同， 并且它们可以彼此耦合以形成环结构，并且n是整数或0-4）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009046540A

公开(公告)日：2009-03-05

申请号：JP2007211834

申请日：2007-08-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KUBO YOHEI ,  IWATO KAORU ,  INABE HARUKI

IPC: C08F38/00 ,  C07C233/65 ,  C07C233/75 ,  C08F10/14 ,  C08F12/34 ,  C09D5/25 ,  C09D139/00 ,  C09D147/00 ,  C09D149/00 ,  C09D201/02 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a film capable of forming a film that exhibits high heat resistance, high mechanical strengths, a low dielectric constant and good preservation stability with time, a film obtained using the composition for forming a film, and an electronic device comprising the film. SOLUTION: The composition for forming a film comprises a compound represented by formula (1) and/or a polymer obtained by polymerizing at least the compound represented by formula (1). The film is formed using the composition for forming a film. The electronic device comprises the film. In formula (1), A 1 is a bivalent to tetravalent organic group; A 2 is an alkenyl group or an alkynyl group; Ar is a (2+a1)-valent aryl group; R is a hydrogen atom or a 1-30C alkyl group; a1 is an integer of 1-4; and a2 is an integer of 2-4. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 待解决的问题：提供一种用于形成能够形成具有高耐热性，高机械强度，低介电常数和随时间保持稳定性良好的膜的膜的组合物，使用该成型用组合物获得的膜 胶片，以及包含该胶片的电子装置。 解决方案：用于形成膜的组合物包含由式（1）表示的化合物和/或通过至少使由式（1）表示的化合物聚合而获得的聚合物。 使用用于形成膜的组合物形成膜。 电子装置包括薄膜。 在式（1）中，A 1是二价至四价有机基团; A 2 是烯基或炔基; Ar是（2 + a1）价的芳基; R是氢原子或1-30C烷基; a1是1-4的整数; a2为2-4的整数。 版权所有（C）2009，JPO＆INPIT