公开(公告)号：JP2015055723A

公开(公告)日：2015-03-23

申请号：JP2013188334

申请日：2013-09-11

Applicant: 富士フイルム株式会社 ,  Fujifilm Corp

Inventor： SHIBUYA AKINORI ,  KITAMURA SATORU ,  KATAOKA SHOHEI ,  KOJIMA MASASHI ,  GOTO AKIYOSHI ,  KATO KEITA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

Abstract: 【課題】露光ラチチュード、ウエハ面内のパターン線幅均一性(CDU)、及びパターン形状に優れた感活性光線性又は感放射線性樹脂組成物、それを用いた感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜及びパターン形成方法、電子デバイスの製造方法、並びに、電子デバイスを提供する。【解決手段】(A)活性光線または放射線の照射により下記一般式(I)又は(II)で表される酸を発生する化合物、及び(B)酸の作用により分解し、極性基を生じる基を有する樹脂、を含有する感活性光線性又は感放射線性樹脂組成物。【選択図】なし

Abstract translation: 要解决的问题：提供在曝光宽容度，晶片平面内的图案线宽均匀性（CDU）和图案轮廓，抗蚀剂膜和图案形成方法中使用的光化射线敏感或辐射敏感性树脂组合物，其使用 该组合物，电子器件的制造方法和电子器件。解决方案：光化射线敏感或辐射敏感性树脂组合物包含：（A）产生由通式（I）或（II）表示的酸的化合物 ）通过光化射线或辐射照射; 和（B）具有通过酸的作用分解以生成极性基团的基团的树脂。

公开(公告)号：JP2014167628A

公开(公告)日：2014-09-11

申请号：JP2014060928

申请日：2014-03-24

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  TARUYA SHINJI ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI ,  DOBASHI TORU ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  KATO KEITA

IPC: G03F7/038 ,  C08F20/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method and a resist composition from which a pattern having fewer development defects can be formed.SOLUTION: The resist composition is used for a specified pattern forming method and comprises the following resin, a hydrophobic resin having a fluorine atom or a silicon atom, and a solvent comprising a specified component. The resin contains a repeating unit (P) having a group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group, contains neither a fluorine atom nor a silicon atom, and shows decrease in the solubility with a developing solution containing an organic solvent by an action of an acid; and in the resin, the repeating unit (P) contains no lactone structure, and the group that is decomposed by an action of an acid to generate an alcoholic hydroxyl group is a group expressed by at least one of specified general formulae. The compounding rate of the resin showing decrease in the solubility with a developing solution containing an organic solvent by an action of an acid is 60 to 95 mass% in the total solid content.

Abstract translation: 要解决的问题：提供一种能够形成具有较少显影缺陷的图案的图案形成方法和抗蚀剂组合物。解决方案：抗蚀剂组合物用于指定的图案形成方法，并且包括以下树脂，疏水性树脂具有 氟原子或硅原子，以及包含特定成分的溶剂。 树脂含有具有通过酸作用而分解以产生醇羟基的基团的重复单元（P），既不含氟原子也不含硅原子，并且显示出与含有 有机溶剂通过酸的作用; 并且在树脂中，重复单元（P）不含有内酯结构，通过酸的作用而分解以产生醇羟基的基团是由至少一个指定的通式表示的基团。 与通过酸作用而含有有机溶剂的显影溶液的溶解性显示出降低的树脂的配合比率，在总固体成分中为60〜95质量％。

公开(公告)号：JP2014071304A

公开(公告)日：2014-04-21

申请号：JP2012217564

申请日：2012-09-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  TAKAHASHI HIDETOMO ,  KATO KEITA

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/04 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/58 ,  C08F232/00 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0388 ,  C08F212/14 ,  C08F212/32 ,  C08F220/04 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/58 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2002 ,  G03F7/2037 ,  G03F7/30 ,  G03F7/325 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method which suppresses generation of standing waves, which allows formation of a pattern with high rectangularity while minimizing scum in patterning on a stepped substrate, which can achieve excellent exposure latitude and which is particularly suitable for KrF exposure, and to provide an active ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (1) forming a film by using an active ray-sensitive or radiation-sensitive resin composition comprising a resin (A) having a repeating unit having a group that is decomposed by an action of an acid to generate a polar group and a repeating unit having a carboxyl group, a compound (B) that generates an acid by irradiation with active rays or radiation, and a solvent (C); (2) exposing the film to KrF excimer laser light, extreme ultraviolet rays or an electron beam; and (3) forming a negative pattern by developing the exposed film by using a developing solution containing an organic solvent.

Abstract translation: 要解决的问题：提供抑制驻波产生的图案形成方法，其允许形成具有高矩形性的图案，同时最小化阶梯式基板上的图案化中的浮渣，其可以获得优异的曝光宽容度，并且特别适用于KrF 曝光，并提供用于该方法的主动射线敏感或辐射敏感性树脂组合物，抗蚀剂膜，电子器件的制造方法和电子器件。解决方案：图案形成方法包括以下步骤：（1 ）通过使用包含具有通过酸作用分解的基团的重复单元的树脂（A）产生极性基团的活性射线敏感性或辐射敏感性树脂组合物形成膜，以及具有 羧基，通过用活性射线或辐射照射产生酸的化合物（B）和溶剂（C）; （2）将膜暴露于KrF准分子激光，极紫外线或电子束; 和（3）通过使用含有机溶剂的显影液显影曝光的薄膜来形成负图案。

公开(公告)号：JP2014048500A

公开(公告)日：2014-03-17

申请号：JP2012191849

申请日：2012-08-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： GOTO AKIYOSHI ,  SHIBUYA AKINORI ,  KATAOKA SHOHEI ,  YAMAGUCHI SHUHEI ,  MATSUDA TOMOKI ,  KATO KEITA

IPC: G03F7/004 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C311/07 ,  C07D217/08 ,  C07D295/08 ,  C07D295/22 ,  C07D317/72 ,  C07D327/06 ,  C07D411/04 ,  C08F20/36 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/027 ,  C07C309/12 ,  C07C309/19 ,  C07C311/09 ,  C07C323/21 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74 ,  C07D217/02 ,  C07D217/08 ,  C07D279/12 ,  C07D285/15 ,  C07D295/067 ,  C07D295/26 ,  C07D319/14 ,  C07D327/02 ,  C07D327/06 ,  C07D333/46 ,  C07D335/02 ,  C07D339/08 ,  C07D411/04 ,  C07D413/04 ,  C07D417/04 ,  C07D493/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition satisfying all demands for reducing pattern collapse, improving exposure latitude and pattern roughness characteristics such as LWR (line width roughness), and achieving excellent stability with time, and to provide a resist film and a pattern forming method using the composition, and a method for manufacturing an electronic device and an electronic device.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes a compound expressed by general formula (1). In the formula, Rrepresents a polycyclic aromatic group or a polycyclic heterocyclic aromatic group; Q represents a connecting group including a heteroatom; n and m each independently represent an integer of 0 to 12, and when n is 2 or more, Rmay be the same or different from each other or a plurality of Rmay be connected to each other to form a non-aromatic ring together with R, and when m is 2 or more, Rmay be the same or different from each other or the plurality of Rmay be connected to each other to form a non-aromatic ring together with R; and Xrepresents a non-nucleophilic anion.

Abstract translation: 要解决的问题：提供满足减少图案塌陷的所有要求的光化射线敏感或辐射敏感性树脂组合物，提高LWR（线宽粗糙度）的曝光宽容度和图案粗糙度特性，并且随时间实现优异的稳定性，以及 提供使用该组合物的抗蚀剂膜和图案形成方法以及电子器件和电子器件的制造方法。光化学射线敏感性或辐射敏感性树脂组合物包含通式（1）表示的化合物， 。 在该式中，R表示多环芳基或多环杂环芳基; Q表示包含杂原子的连接基团; n和m各自独立地表示0〜12的整数，当n为2以上时，R m可以相同或不同，或者多个R may彼此连接，与R一起形成非芳香环 当m为2以上时，R m可以相同或不同，或者多个R may相互连接，与R一起形成非芳香环; X表示非亲核阴离子。

公开(公告)号：JP2013137524A

公开(公告)日：2013-07-11

申请号：JP2012254323

申请日：2012-11-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  SHIRAKAWA MICHIHIRO ,  TAKAHASHI HIDETOMO ,  KAMIMURA SATOSHI

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0388 ,  C08F220/18 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/325 ,  H01L21/0274

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method which suppresses generation of a remarkable standing wave, can form a pattern having high rectangularity and a fine trench pattern, has excellent exposure latitude and LWR, can reduce a development defect, and is particularly suitable for KrF exposure, in a negative pattern forming method by organic solvent development, and to provide an actinic ray-sensitive resin composition and the like used for the same, a resist film, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes: (1) a film-forming step by an actinic ray-sensitive resin composition and the like containing a resin (A) having a repeating unit having a group which is decomposed by an acid and forms a polar group and a repeating unit having an aromatic group, an acid generating compound (B) by active rays and the like and a solvent (C); (2) an exposure step; and (3) a negative pattern forming step by an organic solvent-containing developer. The resin (A) is at least one of a resin having a naphthyl group and the like as an aromatic group, and a resin containing a compound (D) having a naphthalene ring and the like.

Abstract translation: 要解决的问题：为了提供抑制显着驻波的产生的图案形成方法，可以形成具有高矩形性和细沟槽图案的图案，具有优异的曝光宽容度和LWR，可以减少显影缺陷，并且特别适合 用于通过有机溶剂显影以负型图案形成方法进行KrF曝光，并提供用于其的光化学敏感性树脂组合物等，抗蚀剂膜，电子器件的制造方法和电子器件。 解决方案：图案形成方法包括：（1）通过光化学敏感性树脂组合物等形成的含有具有由酸分解并形成极性的基团的重复单元的树脂（A）的成膜步骤 基团和具有芳基的重复单元，通过活性射线等产生酸的化合物（B）和溶剂（C）; （2）曝光步骤; 和（3）通过含有机溶剂的显影剂的负图案形成步骤。 树脂（A）为具有萘基等作为芳香族基团的树脂和含有具有萘环的化合物（D）等的树脂中的至少一种。

公开(公告)号：JP2013011855A

公开(公告)日：2013-01-17

申请号：JP2012091329

申请日：2012-04-12

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  SHIRAKAWA MICHIHIRO ,  TAKAHASHI HIDETOMO ,  SAITO SHOICHI ,  YOSHINO FUMIHIRO

IPC: G03F7/039 ,  C08F220/18 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0382 ,  C08F220/12 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method that prevents reduction in resolution and rectangularity caused by unintentional dissolution of a pattern part during organic solvent development and is excellent in dry etching durability and particularly suitable for KrF exposure, and to provide an actinic ray sensitive or radiation sensitive resin composition used therefor.SOLUTION: A pattern forming method includes the steps of: (1) forming a film by using an actinic ray sensitive or radiation sensitive resin composition containing a resin (A) having a repeating unit that is decomposed by an action of an acid to produce a polar group, a compound (B) that generates an acid by irradiation with actinic rays or radiation, and a solvent (C); (2) exposing the film; and (3) developing the exposed film by using a developing solution containing an organic solvent to form a negative pattern. The resin (A) contains a repeating unit represented by general formula (I) of less than 20 mol% based on the whole repeating units in the resin (A), and contains a repeating unit having a non-phenolic aromatic group other than the unit of general formula (I).

Abstract translation: 要解决的问题：提供一种图案形成方法，其防止在有机溶剂显影期间由图案部分的非故意溶解引起的分辨率和矩形性降低，并且干蚀刻耐久性优异并且特别适用于KrF曝光，并提供 用于其的光化射线敏感或辐射敏感性树脂组合物。 解决方案：图案形成方法包括以下步骤：（1）通过使用含有具有通过酸的作用分解的重复单元的树脂（A）的光化射线敏感或辐射敏感性树脂组合物形成膜 产生极性基团，通过用光化射线或辐射照射产生酸的化合物（B）和溶剂（C）; （2）曝光胶片; 和（3）通过使用含有有机溶剂的显影溶液显影曝光的薄膜以形成负图案。 树脂（A）含有由通式（I）表示的重复单元，相对于树脂（A）中的全部重复单元，含有小于20摩尔％的重复单元，并且含有非酚类芳香族基团以外的重复单元 通式（I）单元。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012133329A

公开(公告)日：2012-07-12

申请号：JP2011243961

申请日：2011-11-07

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  FUJII KANA ,  KAMIMURA SATOSHI ,  IWATO KAORU

IPC: G03F7/039 ,  C08F20/00 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/20 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

Abstract: PROBLEM TO BE SOLVED: To provide a negative pattern forming method for improving removability of a film, reducing scum on a substrate generating after development, reducing scum defects and achieving excellent resolution, in a pattern forming method which includes forming a film having a film thickness of 200 nm or more from a chemically amplified resist composition, and exposing and developing the film, so as to stably form a fine pattern with high accuracy for manufacturing a high-integration and high-accuracy electronic device.SOLUTION: The negative pattern forming method includes steps of: (1) forming a film having a film thickness of 200 nm or more from a chemically amplified resist composition, which contains (A) a resin showing increase in its polarity by an action of an acid to decrease solubility with a developing solution containing an organic solvent, (B) a compound generating an acid by irradiation with actinic rays or radiation, and (C) a solvent; (2) exposing the film; and (3) developing the exposed film with a developing solution containing an organic solvent.

Abstract translation: 要解决的问题：为了提供一种用于提高膜的可除去性的负型图案形成方法，减少在显影后产生的底物上的浮渣，减少浮渣缺陷并获得优异的分辨率，在图案形成方法中，包括形成具有 从化学放大型抗蚀剂组合物的膜厚度为200nm以上，曝光和显影膜，以便高精度地稳定地形成精细图案以制造高集成度和高​​精度的电子器件。 阴性图案形成方法包括以下步骤：（1）从化学放大型抗蚀剂组合物形成膜厚度为200nm以上的膜，其含有（A）显示出极性增加的树脂， 使用含有有机溶剂的显影液降低溶解度的作用，（B）通过用光化射线或辐射照射产生酸的化合物和（C）溶剂; （2）曝光胶片; 和（3）用含有机溶剂的显影液显影曝光的薄膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012083727A

公开(公告)日：2012-04-26

申请号：JP2011196046

申请日：2011-09-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  YAMANAKA TSUKASA ,  ENOMOTO YUICHIRO ,  KATO KEITA

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/32 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405 ,  Y10T428/24802

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of attaining both CDU (Critical Dimension Uniformity) performance and defect performance at high levels.SOLUTION: In the pattern forming method which includes (a) forming a film using a chemically amplified resist composition, (b) exposing the film, and (c) developing the exposed film using a developer containing an organic solvent, the developer contains an ester and ketone having a carbon number of 7 or more.

Abstract translation: 要解决的问题：提供能够以高水平实现CDU（临界尺寸均匀性）性能和缺陷性能的图案形成方法。 解决方案：在图案形成方法中，包括（a）使用化学放大型抗蚀剂组合物形成膜，（b）使膜曝光，和（c）使用含有有机溶剂的显影剂显影曝光膜，显影剂 含有碳数为7以上的酯和酮。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011221509A

公开(公告)日：2011-11-04

申请号：JP2011056712

申请日：2011-03-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  DOBASHI TORU ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  IWATO KAORU ,  KATAOKA SHOHEI ,  MIZUTANI KAZUYOSHI

IPC: G03F7/038 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/2041 ,  Y10T428/24

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having excellent exposure latitude (EL) and a large depth of focus (DOF), and a resist composition.SOLUTION: A pattern forming method of the present invention includes (A) forming a film with a resist composition; (B) exposing the film to light; and (C) developing the exposed film with a developer containing an organic solvent. The resist composition contains (a) a resin which is decomposed by the action of an acid and ΔSP represented by the following equation (1) is equal or more than 2.5(MPa); (b) a compound which generates an acid upon irradiation with actinic rays or radiation; and (c) a solvent.

Abstract translation: 要解决的问题：提供一种用于形成具有优异的曝光宽容度（EL）和大的聚焦深度（DOF）的图案的图案形成方法和抗蚀剂组合物。 解决方案：本发明的图案形成方法包括（A）用抗蚀剂组合物形成膜; （B）将薄膜曝光; 和（C）用含有机溶剂的显影剂显影曝光的薄膜。 抗蚀剂组合物含有（a）通过酸的作用而分解的树脂和下述式（1）表示的ΔSP等于或大于2.5（MPa） 1/2 < SP>; （b）在用光化射线或辐射照射时产生酸的化合物; 和（c）溶剂。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011203698A

公开(公告)日：2011-10-13

申请号：JP2010073662

申请日：2010-03-26

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  IWATO KAORU ,  TARUYA SHINJI ,  KATAOKA SHOHEI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  MIZUTANI KAZUYOSHI ,  DOBASHI TORU

IPC: G03F7/038 ,  C08F20/12 ,  C08F34/00 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition which is excellent in stability with time, a development defect performance and a roughness characteristic, and also to provide a pattern forming method using the composition.SOLUTION: This active ray-sensitive or radiation-sensitive resin composition contains: a resin containing a repeated unit including a group generating an alcoholic hydroxy group by being decomposed by action of an acid, whose solubility to a developing solution containing an organic solvent is reduced by action of the acid; a compound generating an acid by irradiation of an active ray or a radiation; and a solvent. The moisture content rate measured by the Karl Fischer's method is ≤1.0 mass%.

Abstract translation: 要解决的问题：提供一种稳定性随时间优异，显影缺陷性能和粗糙度特性优异的活性射线敏感性或辐射敏感性树脂组合物，并且还提供使用该组合物的图案形成方法。 主动射线敏感性或辐射敏感性树脂组合物含有：含有通过酸作用分解产生醇羟基的基团的重复单元的树脂，其对含有有机溶剂的显影溶液的溶解度通过 酸; 通过活性射线或辐射的照射产生酸的化合物; 和溶剂。 通过卡尔费休法测定的含水率≤1.0质量％。