公开(公告)号：JP2014194534A

公开(公告)日：2014-10-09

申请号：JP2014030830

申请日：2014-02-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATAOKA SHOHEI ,  SHIBUYA AKINORI ,  FUKUHARA TOSHIAKI ,  FURUYA SO ,  SHIRAKAWA MICHIHIRO

IPC: G03F7/004 ,  C07C311/51 ,  C08F20/18 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/038 ,  C07C25/18 ,  C07C233/04 ,  C07C235/88 ,  C07C311/03 ,  C07C311/06 ,  C07C311/51 ,  C07C311/53 ,  C07C381/12 ,  C07C2601/14 ,  C07C2603/74 ,  C07D327/06 ,  C07D333/46 ,  C07D333/76 ,  C07D411/06 ,  C08F220/26 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325 ,  H01L21/0275

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, a photosensitive or radiation-sensitive resin composition, a resist film and a compound, a method for manufacturing an electronic device, and an electronic device, which exhibit high roughness performance and defocusing performance in the formation of an ultrafine pattern (particularly a trench pattern or a hole pattern in a size of 50 nm or less), and excellent resolution and exposure latitude.SOLUTION: The pattern forming method includes steps of (1) forming a film comprising the following photosensitive or radiation-sensitive resin composition, (2) exposing the film, and (3) developing the film with an organic solvent-containing developer to form a negative pattern. The photosensitive or radiation-sensitive resin composition comprises a compound (A) expressed by general formula (I-1), a compound (B) which is different from the compound (A) and generates an acid by irradiation with actinic rays or radiation, and a resin (P) which does not react with an acid generated from the compound (A) but shows decrease in the solubility with an organic solvent-containing developer by an action of an acid from the compound (B). Also disclosed are the photosensitive or radiation-sensitive resin composition, a resist film, the compound (A), a method for manufacturing an electronic device, and an electronic device.

Abstract translation: 要解决的问题：为了提供图案形成方法，感光性或辐射敏感性树脂组合物，抗蚀剂膜和化合物，电子器件的制造方法和电子器件，其具有高的粗糙度性能和散焦性能 超细图案（特别是50nm以下的沟槽图案或孔图案）的形成，以及优异的分辨率和曝光宽容度。图案形成方法包括以下步骤：（1）形成包含以下 感光或辐射敏感性树脂组合物，（2）曝光该膜，和（3）用含有机溶剂的显影剂显影该膜以形成负型图案。 光敏或辐射敏感性树脂组合物包含由通式（I-1）表示的化合物（A），与化合物（A）不同的化合物（B）），并通过用光化射线或辐射照射产生酸， 和不与化合物（A）产生的酸反应的树脂（P），但是通过化合物（B）的酸作用，与含有机溶剂的显影剂的溶解度降低。 还公开了光敏或辐射敏感性树脂组合物，抗蚀剂膜，化合物（A），电子器件的制造方法和电子器件。

公开(公告)号：JP2013210636A

公开(公告)日：2013-10-10

申请号：JP2013084294

申请日：2013-04-12

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TANGO NAOHIRO ,  SHIRAKAWA MICHIHIRO ,  FUJITA MITSUHIRO ,  YAMAGUCHI SHUHEI ,  SHIBUYA AKINORI ,  KATAOKA SHOHEI

IPC: G03F7/039 ,  C07C381/12 ,  C08F20/26 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having effect in improvement of a trailing shape of a resist pattern and capable of forming a pattern with good LER performance, and a pattern forming method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) resin increasing solubility of the resin in alkali developer by action of acid; and (B) a compound generating the acid by irradiation with an actinic ray or a radiation ray. The compound generating the acid by the irradiation with the actinic ray or the radiation ray is contained by an amount of 10 to 30 mass% on the basis of the entire solid content of the actinic ray-sensitive or radiation-sensitive resin composition. A pattern forming method uses the composition.

Abstract translation: 要解决的问题：提供具有改善抗蚀剂图案的拖尾形状并且能够形成具有良好的LER性能的图案的光化射线敏感或辐射敏感性树脂组合物以及使用该组合物的图案形成方法。 解决方案：光化射线敏感或辐射敏感性树脂组合物包含：（A）树脂通过酸作用增加树脂在碱性显影剂中的溶解度; 和（B）通过用光化射线或辐射线照射产生酸的化合物。 基于光化射线敏感性或辐射敏感性树脂组合物的全部固体成分，通过用光化射线或放射线照射而产生酸的化合物的含量为10〜30质量％。 图案形成方法使用该组合物。

公开(公告)号：JP2013068778A

公开(公告)日：2013-04-18

申请号：JP2011207018

申请日：2011-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  TAKAHASHI HIDETOMO ,  SHIRAKAWA MICHIHIRO

IPC: G03F7/039 ,  C08F2/50 ,  C08F20/18 ,  G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0045 ,  B32B3/10 ,  C07C303/32 ,  C07C309/04 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C309/24 ,  C07D327/10 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  Y10T428/24802

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition capable of suppressing occurrence of pattern collapse or bridge defects after developing, and having a high residual film ratio, in a negative pattern formation by means of organic solvent developing, and to provide a resist film, a pattern forming method, a method for manufacturing an electronic device, and an electronic device using the same.SOLUTION: There is provided an actinic ray sensitive or radiation sensitive resin composition including: a resin (P) having a repeating unit (a) represented by the following general formula (I); a compound (B) represented by any one of specific general formulae (B-1) to (B-3); and a solvent. In the general formula (I), Rrepresents a hydrogen atom or a methyl group. R, Rand Reach independently represent a linear or branched alkyl group.

Abstract translation: 要解决的问题：提供一种能够通过有机溶剂在阴图形形成中抑制显影后图案塌陷或桥接缺陷的发生和具有高残留膜比的光化射线敏感或辐射敏感性树脂组合物 显影和提供抗蚀剂膜，图案形成方法，电子器件的制造方法和使用其的电子器件。 提供一种光化射线敏感或辐射敏感性树脂组合物，其包含：具有由以下通式（I）表示的重复单元（a）的树脂（P）; 由具体通式（B-1）至（B-3）中任一个表示的化合物（B）; 和溶剂。 在通式（I）中，R 0 表示氢原子或甲基。 R 1 ，R 2 和R 3 各自独立地表示线性或 支链烷基。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013057923A

公开(公告)日：2013-03-28

申请号：JP2012035633

申请日：2012-02-21

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAHASHI HIDETOMO ,  YAMAGUCHI SHUHEI ,  KATAOKA SHOHEI ,  SHIRAKAWA MICHIHIRO ,  YOSHINO FUMIHIRO ,  SAITO SHOICHI

IPC: G03F7/039 ,  C08F20/16 ,  G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method having excellent roughness performance such as line width roughness, uniformity in a local pattern dimension and exposure latitude and suppressing reduction in a film thickness, so-called film loss, in a pattern formed by exposure, and to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film used for the method.SOLUTION: The pattern forming method includes the steps of: (1) forming a film of an actinic ray-sensitive or radiation-sensitive resin composition comprising resin (P) having a repeating unit (a) expressed by a general formula (I) and a compound (B) generating an organic acid upon irradiation with actinic rays or radiation; (2) exposing the film; and (3) developing the film by using a developing solution containing an organic solvent to form a negative pattern. In the general formula (I), Rrepresents a hydrogen atom or a methyl group; and R, R, and Reach independently represent a straight-chain or branched alkyl group.

Abstract translation: 要解决的问题：提供一种图案形成方法，其具有优异的粗糙度性能，例如线宽粗糙度，局部图案尺寸和曝光宽容度的均匀性，并且抑制图案中所谓的膜损失 通过曝光形成，并提供用于该方法的光化射线敏感或辐射敏感性树脂组合物和抗蚀剂膜。 图案形成方法包括以下步骤：（1）形成具有由通式（a）表示的重复单元（a）的树脂（P）的光化射线敏感性或辐射敏感性树脂组合物的膜， I）和在用光化射线或辐射照射时产生有机酸的化合物（B）; （2）曝光胶片; 和（3）通过使用含有有机溶剂的显影溶液显影以形成负图案。 在通式（I）中，R 0 表示氢原子或甲基; 和R 1 ，R 2 ，并且R 3 各自独立地表示 直链或支链烷基。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013047790A

公开(公告)日：2013-03-07

申请号：JP2012158041

申请日：2012-07-13

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAGUCHI SHUHEI ,  TAKAHASHI HIDETOMO ,  SHIRAKAWA MICHIHIRO ,  YOSHINO FUMIHIRO

IPC: G03F7/038 ,  C08F220/10 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0382 ,  C08F20/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for achieving excellent roughness performance such as line width roughness, uniformity of local pattern dimensions and exposure latitude, reducing dependency of a pattern size on developing time, and suppressing reduction of film thickness, so-called film thinning, in a patterned portion formed by development, and to provide an actinic ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device and an electronic device.SOLUTION: The pattern forming method includes steps of: (1) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin (P) having a repeating unit (a1) expressed by general formula (I) or (II) by 20 mol% or more in the whole repeating units and a compound (B) that generates an acid by irradiation with actinic rays or radiation; (2) exposing the film: and (3) forming a negative pattern by developing the exposed film by using a developing solution containing an organic solvent.

Abstract translation: 要解决的问题：为了提供一种用于获得优异的粗糙度性能的图案形成方法，例如线宽粗糙度，局部图案尺寸和曝光宽容度的均匀性，减小图案尺寸对显影时间的依赖性，并且抑制膜厚度的降低 ，所谓的薄膜变薄，在通过显影形成的图案部分中，并且提供用于该方法的光化射线敏感或辐射敏感性树脂组合物，抗蚀剂膜，电子器件的制造方法和电子器件。 图案形成方法包括以下步骤：（1）通过使用包含具有由通式（a1）表示的重复单元（a1）的树脂（P）的光化射线敏感性或辐射敏感性树脂组合物形成膜， I）或（II）在整个重复单元中为20摩尔％或更多，以及通过用光化射线或辐射照射产生酸的化合物（B） （2）使膜曝光;（3）通过使用含有有机溶剂的显影液显影曝光的薄膜来形成负图案。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013033227A

公开(公告)日：2013-02-14

申请号：JP2012143050

申请日：2012-06-26

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  SHIRAKAWA MICHIHIRO ,  OTANI TADAHIRO ,  NAKAMURA ATSUSHI ,  TAKAHASHI HIDETOMO ,  IWATO KAORU

IPC: G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/095

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, by which a pattern with good line width roughness (LWR) and a rectangular profile can be formed, and to provide a multilayer resist pattern formed by the method, a multilayer film for development with an organic solvent suitably used for the pattern forming method, and a resist composition suitably used for the pattern forming method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (1) forming a first film on a substrate by using a first resin composition (I); (2) forming a second film on the first film by using a second resin composition (II) different from the resin composition (I); (3) exposing a multilayer film having the first film and the second film; (4) developing the first film and the second film in the exposed multilayer film by using a developing solution containing an organic solvent to form a negative pattern.

Abstract translation: 要解决的问题为了提供一种图案形成方法，通过该图案形成方法可以形成具有良好的线宽粗糙度（LWR）和矩形轮廓的图案，并且提供通过该方法形成的多层抗蚀剂图案，多层膜 用于适合用于图案形成方法的有机溶剂的显影，以及适用于图案形成方法的抗蚀剂组合物，电子器件的制造方法和电子器件。 图案形成方法包括以下步骤：（1）通过使用第一树脂组合物（I）在基材上形成第一膜; （2）通过使用与树脂组合物（I）不同的第二树脂组合物（II）在第一膜上形成第二膜; （3）曝光具有第一膜和第二膜的多层膜; （4）通过使用含有有机溶剂的显影液形成负图案，使曝光的多层膜中的第一膜和第二膜显影。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012013835A

公开(公告)日：2012-01-19

申请号：JP2010148902

申请日：2010-06-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAHASHI HIDETOMO ,  SHIRAKAWA MICHIHIRO ,  YOSHITOME MASAHIRO ,  HIRANO SHUJI ,  TANGO NAOHIRO

IPC: G03F7/039 ,  C08F20/26 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition that excels in roughness property, exposure latitude, depth of focus and development defect performance and that allows to form a fine isolated space pattern of favorable shape, and to provide a pattern forming method using the same.SOLUTION: An actinic ray sensitive or radiation sensitive resin composition contains a resin (P) including a repeating unit (A) comprising a structure moiety (S1) which is decomposed by action of an acid to generate an alkali soluble group and a structure moiety (S2) which is decomposed by action of an alkali developer to increase the dissolution rate in the alkali developer, where the content of the repeating unit (A) is 30 mol% or more based on the total repeating units in the resin.

Abstract translation: 要解决的问题：提供优异的粗糙性，曝光宽容度，深度和显影缺陷性能的光化射线敏感或辐射敏感性树脂组合物，并且允许形成良好形状的精细隔离空间图案，以及 以提供使用该图案形成方法的图案形成方法。 光敏射线敏感性或辐射敏感性树脂组合物含有包含重结构单元（A）的树脂（P），该重复单元（A）包含结构部分（S1），其通过酸的作用而分解以产生碱溶性基团， 结构部分（S2），其通过碱显影剂的作用而分解，以提高碱显影剂中的溶解速率，其中重复单元（A）的含量相对于树脂中的总重复单元为30摩尔％以上。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011213840A

公开(公告)日：2011-10-27

申请号：JP2010082700

申请日：2010-03-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HIRANO SHUJI ,  TAKAHASHI HIDETOMO ,  IIZUKA YUSUKE ,  SHIRAKAWA MICHIHIRO ,  YOSHITOME MASAHIRO

IPC: C08F20/12 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a production method capable of obtaining a lactone compound containing an acid-degradable group with a high yield, and a production method for an active light ray-sensitive or radiation-sensitive resin composition in which resist performance is improved.SOLUTION: This production method is a production method for a compound represented by formula (IB) below using a compound represented by formula (IA) below. (formulas (IA) and (IB)) (where Q represents a polymerizable group; Ls are independently a linking group when m is 2 or more; Lc represents a group having a lactone structure; Arepresents a group eliminated by an action of an acid or a group having a group generating an alkali soluble group by being degraded by an action of an acid; and m represents an integer of 0 or more).

Abstract translation: 要解决的问题：提供能够以高产率获得含有酸降解基团的内酯化合物的制备方法，以及其中抗蚀剂性能得到改善的活性光敏感或辐射敏感性树脂组合物的制备方法 。溶液：该制造方法是使用下述式（IA）表示的化合物的下述式（IB）表示的化合物的制造方法。 （式（IA）和（IB））（其中Q表示可聚合基团;当m为2以上时，Ls独立地为连接基; Lc表示具有内酯结构的基团;表示通过酸的作用除去的基团 或具有通过酸的作用而降解而产生碱溶性基团的基团，m表示0以上的整数。

公开(公告)号：JP2011203646A

公开(公告)日：2011-10-13

申请号：JP2010072842

申请日：2010-03-26

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SHIRAKAWA MICHIHIRO ,  TAKAHASHI HIDETOMO ,  HIRANO SHUJI ,  IIZUKA YUSUKE ,  YOSHITOME MASAHIRO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which improves a pattern shape and exposure latitude and reduces bridge defects, and a pattern forming method using the same.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: a resin (P) comprising a repeating unit (A) having a structural moiety (S1) which is decomposed by the action of an acid to thereby generate an alkali-soluble group, and a structural moiety (S2) which is decomposed by the action of an alkali developer to thereby exhibit an increased dissolution rate in the alkali developer; and a compound (PDA) which has a proton accepting functional group and is decomposed upon irradiation with actinic rays or radiation to thereby generate a compound having reduced or lost proton accepting ability or having acidity turned from proton accepting ability.

Abstract translation: 要解决的问题：提供改善图案形状和曝光宽容度并减少桥接缺陷的光化射线敏感或辐射敏感性树脂组合物，以及使用其的图案形成方法。解决方案：光化射线敏感或辐射敏感性， 敏感性树脂组合物包括：包含具有通过酸作用而分解从而产生碱溶性基团的结构部分（S1）的重复单元（A）的树脂（P）和结构部分（S2），其中 被碱显影剂的作用分解，从而在碱性显影剂中表现出增加的溶解速率; 和具有质子接受官能团的化合物（PDA），并且在通过光化射线或辐射照射时分解，从而产生具有质子接受能力降低或失去或具有由质子接受能力转变的酸度的化合物。

公开(公告)号：JP2011203505A

公开(公告)日：2011-10-13

申请号：JP2010070872

申请日：2010-03-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SHIRAKAWA MICHIHIRO ,  TAKAHASHI HIDETOMO ,  HIRANO SHUJI ,  IIZUKA YUSUKE ,  YOSHITOME MASAHIRO

IPC: G03F7/004 ,  C08F20/28 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which improves exposure latitude, depth of focus and pattern shape and to suppress standing waves, and a pattern forming method using the same.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: a resin (P) comprising a repeating unit (A) having a structural moiety (S1) which is decomposed by the action of an acid to thereby generate an alkali-soluble group, and a structural moiety (S2) which is decomposed by the action of an alkali developer to thereby exhibit an increased dissolution rate in the alkali developer; and a compound (Q) represented by any one of general formulae (1) to (5).

Abstract translation: 要解决的问题：提供改善曝光宽容度，焦深和图案形状并抑制驻波的光化射线敏感或辐射敏感性树脂组合物，以及使用其的图案形成方法。解决方案： 敏感或辐射敏感性树脂组合物包括：包含具有结构部分（S1）的重复单元（S）的树脂（P），其通过酸的作用而分解，从而产生碱溶性基团，并且结构部分 （S2），其通过碱性显影剂的作用而分解，从而在碱性显影剂中表现出增加的溶解速率; 和由通式（1）至（5）中的任何一个表示的化合物（Q）。