公开(公告)号：JP2012032672A

公开(公告)日：2012-02-16

申请号：JP2010173188

申请日：2010-07-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAHASHI HIDETOMO ,  HIRANO SHUJI ,  TSUBAKI HIDEAKI

IPC: G03F7/039 ,  C08F212/02 ,  C08F220/30 ,  C08F220/58 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray- or radiation-sensitive resin composition which simultaneously satisfies sensitivity, resolution, pattern shape, line edge roughness and dry etching resistance, in lithography especially using an electron beam, an X-ray or an EUV ray, and to provide a resist-film and pattern formation method utilizing the same.SOLUTION: The actinic ray- or radiation-sensitive resin composition includes a resin (P) containing: a repeating unit (A) represented by the following general formula (I) or (II) which is decomposed by exposure to an actinic or radioactive ray to generate an acid anion at a side chain of the resin; a repeating unit (B) which is decomposed by the effect of an acid to generate an alkali soluble group; and a repeating unit (F) represented by the following general formula (X).

Abstract translation: 要解决的问题：提供一种光刻或射线敏感性树脂组合物，其在特别是使用电子束的光刻中同时满足灵敏度，分辨率，图案形状，线边缘粗糙度和干蚀刻电阻，X射线 或EUV射线，并提供利用该抗蚀剂膜和图案形成方法。 光解射线或辐射敏感性树脂组合物包括含有以下通式（I）或（II）表示的重复单元（A）的树脂（P），其通过曝光于光化学 或放射线以在树脂的侧链产生酸阴离子; 重复单元（B），其通过酸的作用而分解以产生碱溶性基团; 和由以下通式（X）表示的重复单元（F）。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012025762A

公开(公告)日：2012-02-09

申请号：JP2011191956

申请日：2011-09-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KODAMA KUNIHIKO ,  TSUCHIMURA TOMOTAKA ,  SAEGUSA HIROSHI ,  TSUBAKI HIDEAKI

IPC: C07C381/12 ,  C07C309/06 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a novel compound used for a photosensitive composition forming a good-profile pattern improved in pattern collapse even in formation of a fine pattern of ≤100 nm.SOLUTION: The compound is an arylsulfonium salt represented by formula (I) (wherein Xand Xeach independently denote an aryl group or the like; Ardenotes an aryl group; Ydenotes a single bond or a divalent linking group; Ydenotes a polycyclic hydrocarbon group; mand mdenote an integer of 0 to 2; mdenotes 1 or 2; here, m+m+m=3; mdenotes an integer of 1 to 3; and X- denotes a counter anion).

Abstract translation: 待解决的问题：为了提供一种用于感光组合物的新型化合物，即使在形成≤100nm的精细图案时也能形成改善图案塌陷的良好轮廓图案。 解决方案：化合物是由式（I）表示的芳基锍盐（其中X 1 和X 2 表示芳基等; Ar 1表示芳基; Y 1 表示单键或二价连接基团 ; Y 2 表示多环烃基; m 1 ，m 2 表示0〜2的整数; m 3表示1或2;这里，m 1 + m 2 + m 3 = 3; m 4 表示1〜3的整数; X - 表示抗衡阴离子）。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011013671A

公开(公告)日：2011-01-20

申请号：JP2010126995

申请日：2010-06-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： DOBASHI TORU ,  TSUBAKI HIDEAKI ,  SHIRAKAWA KOJI ,  TAKAHASHI HIDETOMO ,  TSUCHIMURA TOMOTAKA

IPC: G03F7/004 ,  C08F212/14 ,  C08F220/16 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic-ray- or radiation-sensitive resin composition that is satisfactory with respect to high sensitivity, high resolution of a dense pattern and an isolated line, sufficient exposure latitude, proper line width roughness, proper bridge margin and high resolution of isolated space, and to provide a method for forming a pattern using the composition.SOLUTION: The actinic-ray- or radiation-sensitive resin composition includes a resin (A), whose solubility in an alkali developer is increased by the action of an acid; the resin containing a monocyclic acid-dissociable cycloalkyl (meth)acrylate unit having 5 to 8 carbon atoms and a substituted styrene unit; and a compound (B) which, when exposed to actinic rays or radiation, generates sulfonic acid having a structure of an aromatic ring that has a substituent, including a hydrocarbon group having 3 or more carbon atoms.

Abstract translation: 要解决的问题：提供对于高灵敏度，高分辨率的致密图案和隔离线，令人满意的光化射线或辐射敏感性树脂组合物，足够的曝光宽容度，适当的线宽粗糙度，适当的桥边距 和分离空间的高分辨率，并提供使用该组合物形成图案的方法。解决方案：光化射线或辐射敏感树脂组合物包括树脂（A），其在碱显影剂中的溶解度增加 酸的作用; 所述树脂含有具有5〜8个碳原子的单环酸解离的（甲基）丙烯酸环氧烷基酯单元和取代的苯乙烯单元; 和当曝光于光化射线或辐射时产生具有取代基的芳香环结构的磺酸的化合物（B），包括具有3个或更多个碳原子的烃基。

公开(公告)号：JP2009294264A

公开(公告)日：2009-12-17

申请号：JP2008145152

申请日：2008-06-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  SUGIMOTO NAOYA

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new surface treating agent for a freezing process, with which, in a freezing process, the height of a first resist pattern does not change upon surface treatment and the formation of a second resist pattern, and the line width roughness (LWR) of the first resist pattern does not change even after surface treatment and the formation of the second resist pattern, and to provide a pattern forming method using the same. SOLUTION: The surface treating agent for pattern formation contains a compound having an aziridinyl group. The pattern forming method uses the surface treating agent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于冷冻过程的新型表面处理剂，在冷冻过程中，第一抗蚀剂图案的高度在表面处理和第二抗蚀剂图案的形成时不会改变， 并且即使在表面处理和第二抗蚀剂图案的形成之后，第一抗蚀剂图案的线宽粗糙度（LWR）也不变化，并且提供使用其的图案形成方法。 解决方案：用于图案形成的表面处理剂含有具有吖丙啶基的化合物。 图案形成方法使用表面处理剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009009047A

公开(公告)日：2009-01-15

申请号：JP2007172414

申请日：2007-06-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  TSUBAKI HIDEAKI ,  WADA KENJI

IPC: G03F7/039 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0046 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/70458 ,  G03F7/70466

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method using a positive resist composition suitable for multiple exposures, ensuring that in the multiple exposure process of performing exposure a plurality of times on the same resist film, the pattern is reduced in the film loss. SOLUTION: The pattern forming method performs a multiple exposure process comprising exposing a resist film a plurality of times, wherein a contact angle of the resist film for water is ≥75°. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供使用适合于多次曝光的正性抗蚀剂组合物的图案形成方法，确保在多次曝光过程中在同一抗蚀剂膜上进行多次曝光，图案在 电影丢失。 解决方案：图案形成方法进行多次曝光处理，包括多次曝光抗蚀剂膜，其中水的抗蚀剂膜的接触角为≥75°。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008311474A

公开(公告)日：2008-12-25

申请号：JP2007158582

申请日：2007-06-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  WADA KENJI ,  TSUBAKI HIDEAKI

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/38

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/2022 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a pattern with a desirous pattern resolution and line width roughness (LWR) using a positive resist composition suitable for multiple exposure in a multiple exposure process of exposing the same photo-resist film two or more times. SOLUTION: The method of forming a pattern is characterized by steps of exposing the same resist film two or more times and heating the resist film during at least one period between two exposures. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在曝光相同的光致抗蚀剂膜的多次曝光工艺中使用适合于多次曝光的正光刻胶组合物来形成具有想像图案分辨率和线宽粗糙度（LWR）的图案的方法 两次以上。 解决方案：形成图案的方法的特征在于以下步骤：在两次曝光之间的至少一个时间段期间曝光相同抗蚀剂膜两次或更多次并加热抗蚀剂膜。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008310314A

公开(公告)日：2008-12-25

申请号：JP2008128797

申请日：2008-05-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI

IPC: G03F7/30 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide a method for pattern formation that can form a pattern which renders the dimension of a trench pattern or a hole pattern, effectively fine, without producing any scum. SOLUTION: The method is characterized by comprising (α) the step of coating a resist composition, which contains a resin capable of increasing its polarity due to the action of an acid and, upon exposure to an active light or a radiation, undergoes an increase in solubility to a positive developer and undergoes a decrease in solubility to a negative developer; (β) the step of exposure; (γ) the step of conducting development with a negative developer to form a resist pattern; and (δ) the step of allowing a crosslinked layer forming material to act on the resist pattern to crosslink the resin constituting the resist pattern and the corsslinked layer forming material to form a crosslinked layer. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种图案形成方法，其可以形成使得沟槽图案或孔图案的尺寸有效地精细而不产生任何浮渣的图案。 解决方案：该方法的特征在于包括（α）涂覆抗蚀剂组合物的步骤，该抗蚀剂组合物含有能够由于酸的作用而增加其极性的树脂，并且在暴露于活性光或辐射时， 对正极显影剂的溶解度增加，并且对负显影剂的溶解度降低; （β）曝光的步骤; （γ）用负极显影剂进行显影以形成抗蚀剂图案的步骤; 和（δ）允许交联层形成材料作用于抗蚀剂图案以交联构成抗蚀剂图案的树脂和交联层形成材料以形成交联层的步骤。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008309879A

公开(公告)日：2008-12-25

申请号：JP2007155323

申请日：2007-06-12

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/146

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a pattern for stably forming an accurate fine pattern to be used in semiconductor manufacturing process such as IC or the like, manufacturing of a circuit board for a liquid crystal, thermal head or the like, and other photo fabrication processes. SOLUTION: The method of forming a pattern includes steps of: (α) coating a substrate with a specific resist composition for negative development which contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an active ray or radiation; (β) exposing the resist film via an immersion medium; and (γ) performing development with a negative developer. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成图案的方法，用于稳定地形成要用于诸如IC等的半导体制造工艺中的精确精细图案，制造用于液晶的电路板，热敏头或 类似物和其他照相制造工艺。 解决方案：形成图案的方法包括以下步骤：（α）用含负极显影的特定抗蚀剂组合物涂覆基材，所述抗蚀剂组合物含有能够通过酸的作用增加极性的树脂，并变得更易溶于 阳性显影剂，并且在用活性射线或辐射照射时较少溶于阴性显影剂; （β）通过浸渍介质曝光抗蚀剂膜; 和（γ）用负极显影剂进行显影。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008281974A

公开(公告)日：2008-11-20

申请号：JP2007197838

申请日：2007-07-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  TARUYA SHINJI ,  MIZUTANI KAZUYOSHI ,  WADA KENJI ,  HOSHINO WATARU

IPC: G03F7/30 ,  C08F20/28 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resist composition to be used in the method, a developing solution to be used in the method and a rinsing solution to be used in the method. SOLUTION: The pattern forming method includes: (α) coating a resist composition including a resin that includes a specific repeating unit, and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (β) exposing; and (γ) developing with a negative developing solution. There are also provided the resist composition to be used in the method, the developing solution to be used in the method and the rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶，热敏头和 或其他光加工方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 解决方案：图案形成方法包括：（α）涂覆包含特定重复单元的树脂的抗蚀剂组合物，并且通过酸的作用，增加极性并降低在显影液中的溶解度; （β）曝光; 和（γ）用负显影液显影。 还提供了该方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008116720A

公开(公告)日：2008-05-22

申请号：JP2006300263

申请日：2006-11-06

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SAEGUSA HIROSHI ,  KODAMA KUNIHIKO ,  TSUBAKI HIDEAKI

IPC: G03F7/004 ,  C07C69/75 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a positive photosensitive composition which solves the problems of pattern collapse and film thickness reduction of an isolated pattern even in the formation of a fine pattern of ≤100 nm and forms a pattern of a good profile, and a pattern forming method using the same. SOLUTION: The positive photosensitive composition comprises (A) a resin which is decomposed by the action of an acid to increase solubility in an alkali developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a specific non-polymer compound having an alicyclic group and an ester group. The pattern forming method using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供即使形成≤100nm的精细图案也能够解决隔离图案的图案塌陷和膜厚度降低的问题的正型感光性组合物，并且形成良好轮廓的图案， 以及使用该图案形成方法的图案形成方法。 正光敏组合物包含：（A）通过酸的作用而分解的树脂，以增加在碱性显影剂中的溶解度;（B）在用光化射线或辐射照射时能够产生酸的化合物 ，（C）具有脂环基和酯基的特定非聚合物。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2008，JPO＆INPIT