公开(公告)号：JP2013068781A

公开(公告)日：2013-04-18

申请号：JP2011207021

申请日：2011-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KOSHIJIMA KOSUKE ,  TAKAHASHI HIDETOMO ,  YAMAGUCHI SHUHEI ,  YAMAMOTO KEI

IPC: G03F7/038 ,  C08F20/18 ,  C09K3/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24802

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition having an ultrafine pore diameter (for instance, 60 nm or smaller), and capable of forming a hole pattern excellent in rectangularity of a cross sectional shape, in an excellent uniformity in local pattern dimensions, and to provide a resist film, a pattern forming method, a method for manufacturing an electronic device, and an electronic device using the same.SOLUTION: There is provided an actinic ray sensitive or radiation sensitive resin composition including: a resin (P) including a repeating unit (a) represented by the following general formula (I); and 1 mass% or more of a resin (C) including a compound (B) that generates an organic acid by irradiation with an actinic ray or radiation, and also including at least one of a fluorine atom and a silicon atom, the resin (C) different from the resin (P) based on the total solid amount of the actinic ray sensitive or radiation sensitive resin composition. In the general formula (I), Rrepresents a hydrogen atom or a methyl group. R, Rand Reach independently represent a linear or branched alkyl group.

Abstract translation: 要解决的问题：为了提供具有超细孔径（例如60nm以下）的光化射线敏感性或辐射敏感性树脂组合物，能够形成截面形状矩形性优异的孔图案， 在局部图案尺寸上具有优异的均匀性，并且提供抗蚀剂膜，图案形成方法，电子器件的制造方法和使用其的电子器件。 提供了一种光化射线敏感或辐射敏感性树脂组合物，其包含：包含由以下通式（I）表示的重复单元（a）的树脂（P）; 和1质量％以上的包含通过用光化射线或辐射照射产生有机酸的化合物（B）的树脂（C），还包含氟原子和硅原子中的至少一种的树脂（C），树脂（ C）与基于光化学敏感或辐射敏感性树脂组合物的总固体量的树脂（P）不同。 在通式（I）中，R 0 表示氢原子或甲基。 R 1 ，R 2 和R 3 各自独立地表示线性或 支链烷基。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012133053A

公开(公告)日：2012-07-12

申请号：JP2010283867

申请日：2010-12-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： FUKUHARA TOSHIAKI ,  YAMAGUCHI SHUHEI ,  YAMAMOTO KEI

IPC: G03F7/004 ,  C08F212/14 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of decreasing elution of an acid from an exposed portion of a resist film into an immersion liquid in an immersion exposure process and suppressing watermark defects and development defects, and to provide a resist film and a pattern forming method using the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: (A) a resin the solubility of which with an alkali developing solution is increased by an action of an acid; (B) a compound generating an acid by irradiation with actinic rays or radiation; (C) a hydrophobic resin having a sulfonamide structure; and (D) a mixture solvent comprising two or more kinds of solvents and having a boiling point of 200°C or more. The resist film and the pattern forming method are obtained by using the composition.

Abstract translation: 要解决的问题：提供一种能够在浸没曝光工艺中将酸从抗蚀剂膜的暴露部分浸入浸液中的光敏性或辐射敏感性树脂组合物，并且抑制水印缺陷和 显影缺陷，并提供使用该组合物的抗蚀剂膜和图案形成方法。 光敏射线敏感性树脂组合物含有：（A）通过酸的作用使其与碱性显影液的溶解度增加的树脂; （B）通过用光化射线或辐射照射产生酸的化合物; （C）具有磺酰胺结构的疏水性树脂; 和（D）包含两种或更多种溶剂并且沸点为200℃或更高的混合溶剂。 通过使用该组合物获得抗蚀剂膜和图案形成方法。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012093733A

公开(公告)日：2012-05-17

申请号：JP2011210645

申请日：2011-09-27

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAMOTO KEI ,  IIZUKA YUSUKE ,  SHIBUYA AKINORI ,  YAMAGUCHI SHUHEI

IPC: G03F7/004 ,  C07C309/17 ,  C07C381/12 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  Y10T428/24835

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing a watermark defect and forming an excellently shaped resist pattern, and to provide a resist film using the same and a patterning method.SOLUTION: A resist composition contains: (A) a resin that dissolves by an action of acid whose solubility in an alkaline developer increases; an onium salt that is a compound generating acid by irradiation of activated ray or radioactive ray and that includes the general formula (I), or a bis (alkylsulfonyl) imide anion and a tris (alkylsulfonyl) methide anion; (C) a resin that includes at least one of a fluorine atom and a silicon atom; and a combined solvent that includes a first solvent and a second solvent at least one of which has a standard boiling point of 200°C or higher.

Abstract translation: 要解决的问题：提供能够减少水印缺陷并形成优异的抗蚀剂图案的抗蚀剂组合物，并提供使用其的抗蚀剂膜和图案化方法。 抗蚀剂组合物包含：（A）通过酸在碱性显影剂中的溶解度增加而溶解的树脂; 作为通过激活射线或放射线照射产生酸的化合物的鎓盐，其包含通式（I）或双（烷基磺酰基）酰亚胺阴离子和三（烷基磺酰基）甲基化阴离子; （C）包含氟原子和硅原子中的至少一个的树脂; 以及包含第一溶剂和第二溶剂的组合溶剂，其中至少一种具有200℃或更高的标准沸点。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010271649A

公开(公告)日：2010-12-02

申请号：JP2009125508

申请日：2009-05-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KOSHIJIMA KOSUKE ,  HIRANO SHUJI ,  SAEGUSA HIROSHI ,  IIZUKA YUSUKE ,  IWATO KAORU ,  YAMAMOTO KEI

IPC: G03F7/039 ,  C08F220/12 ,  G03F7/004 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which reduces coating defects and enables provision of an excellent pattern even in immersion exposure, and a pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin which is decomposed by the action of an acid and exhibits increased solubility in an alkali developer; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; (C) a resin having at least either a fluorine atom or a silicon atom and a polarity conversion group which is decomposed by the action of an alkali developer and exhibits increased solubility in the alkali developer; and (D) a mixed solvent containing at least one solvent selected from the group represented by general formulae (S1)-(S3), wherein the total content of the solvent is 3-20 mass% in all solvents. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供减少涂层缺陷并能够在浸渍曝光中提供优异图案的光化射线敏感或辐射敏感性树脂组合物，以及使用其的图案形成方法。 光敏射线敏感性树脂组合物包括：（A）通过酸的作用而分解并在碱性显影剂中显示增加的溶解性的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）具有氟原子或硅原子中至少一个的树脂和通过碱性显影剂的作用分解的极性转换基团，并且在碱性显影剂中表现出增加的溶解性; 和（D）含有至少一种选自通式（S1） - （S3）所示基团的溶剂的混合溶剂，其中所有溶剂中溶剂的总含量为3-20质量％。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007279663A

公开(公告)日：2007-10-25

申请号：JP2006257553

申请日：2006-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAMOTO KEI ,  KANNA SHINICHI ,  KANDA HIROMI

IPC: G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition which is improved in pattern profile in ordinary exposure and liquid immersion lithography and excels in followability of water in liquid immersion lithography and a pattern forming method using the same, with respect to a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes and a pattern forming method using the same. SOLUTION: The positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having a fluorine atom-containing repeating unit of a specific structure and being stable to an acid and insoluble in an alkali developer, and (D) a solvent. The pattern forming method using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供在普通曝光和液浸光刻中改进图案轮廓的正性抗蚀剂组合物，以及液浸式光刻中的水的追随性以及使用其的图案形成方法相对于 用于半导体（例如IC）的制造工艺中的正性抗蚀剂组合物，在制造液晶电路基板，热敏头等中或在其它光制造工艺中使用的图案形成方法。 正型抗蚀剂组合物包括：（A）在酸性作用下在碱性显影剂中的溶解度增加的树脂，（B）在光化射线或辐射照射时能够产生酸的化合物（ C）具有特定结构的含氟原子的重复单元并且对酸稳定并且不溶于碱性显影剂的树脂，和（D）溶剂。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2008，JPO＆INPIT