MANUFACTURE OF BUBBLE MEMORY CHIP
    41.
    发明专利

    公开(公告)号:JPS5690514A

    公开(公告)日:1981-07-22

    申请号:JP16761479

    申请日:1979-12-25

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To extremely simply obtain a memory by a method wherein, after such a large quantity of ions is injected into the whole surface of the substrate of a magnetic bubble memory as the magnetic properties of the surface layer disappear, only the fixed part is magnetized and regenerated by means of an electronic beam or a laser beam. CONSTITUTION:A sufficient quantity of ions 11 is injected into the whole surface of a substrate 1 made up of garnet crystal as the magnetic properties of the surface layer disappear to form a nonmagnetic layer extinguishing a magnetic characteristic. In this way, making the surface layer into a nonmagnetic layer 13, thereunder a vertical magnetic field is made to remain and said part is made to play to hold magnetic bubbles. Next, the layer 13 except a fixed patter part 15 is irradiated scanning from above an electronic beam or a laser beam to regenerate in the layer 13 except a part 15 a subfacial magnetized layer 14. In this way Au vaporization and hot lithography process and such are not required thus to simplify manufacture and moreover the annealing process is not required, bacause this is done at the time of irradiation.

    MAGNETIC BUBBLE MEMORY CHIP
    42.
    发明专利

    公开(公告)号:JPS5680875A

    公开(公告)日:1981-07-02

    申请号:JP15551579

    申请日:1979-12-03

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To carry out the most suitable alignment of a bias margin correspondingly to the function of the pattern without changing the pattern by selecting the thickness of an insulating layer for a spacer. CONSTITUTION:On the SiO2 insulating layer 21 formed on gadolinium, gallium or garnet substrate 17, permalloy pattern 22a is disposed and on the SiO2 insulating laye 23 of a adjusting spacer laminated on the layer 21, permalloy pattern 22b or the like is provided, thereby a memory chip is formed. By this constitution, in accordance with the function of the pattern such as major loop minor loop, the thickness of the insulating layer is selected to the most suitable value to which the bias margin is aligned, and the bias margin is adjusted easily so as to be most suitable by a formation process without changing the pattern.

    AC TYPE PLASMA DISPLAY PANEL
    44.
    发明专利

    公开(公告)号:JPH06333503A

    公开(公告)日:1994-12-02

    申请号:JP11834293

    申请日:1993-05-20

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To provide an AC type plasma display panel which can reduce the load of an IC driver to apply a sustaining voltage to a display electrode in particular. CONSTITUTION:A plasma display panel is composed to make a lead oxide in a glass paste to be a dielectric layer 13 to cover a tin oxide type display electrode 12 of a glass substrate 11, not exceed 60% of all the inorganic type composite included in the glass paste in the weight ratio. Consequently, the load of an IC driver can be reduced.

    PLASMA DISPLAY PANEL
    45.
    发明专利

    公开(公告)号:JPH06243786A

    公开(公告)日:1994-09-02

    申请号:JP2831193

    申请日:1993-02-18

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To improve dielectric strength of an electrode pair during operation by coveringly arranging a withstand voltage improving film on the surface of a dielectric layer coating the second base plate provided with an electrode pair for face discharge between two base plates facing each other via a discharge space. CONSTITUTION:In a plasma display panel, the first base plate 11 and the second base plate 13 are faced with each other via a discharge space S. The base plate 13 is covered by a dielectric layer 12c after plural display electrodes 12b-1, 12b-2, which constitute an electrode pair 12b for surface discharge and are parallel with each other, are arranged on a base plate 12a. After partition walls 12d, which divide the electrode pairs 12 into every unit discharge area, are formed on the base plate 13, a withstand voltage improving film 13a (for example, SiO2 of approximately 5000A film thickness) and a protecting film 13b (MgO of approximately 5000A film thickness) are formed on the exposed surface of the layer 12c. In this way, insulating breakage between the electrode 12b-1 and the electrode 12b-2 is prevented during the operation of the panel.

    PLASMA DISPLAY PANEL
    47.
    发明专利

    公开(公告)号:JPH04274140A

    公开(公告)日:1992-09-30

    申请号:JP3596591

    申请日:1991-03-01

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To provide a plasma display panel capable of surface emissing with high luminance by arranging electrodes for the surface emission. CONSTITUTION:In a plasma display panel 1 having a pair of bandlike electrodes (x), (y) parallel to each other, one electrode (x) is mounted on a substrate 11 on a light emitting surface H side while the other electrode (y) is disposed on a substrate 21 on a back side in such a manner as not to be superposed on the electrode (x). A distance (d) between the pair of electrodes (x), (y) is set in such a manner that discharge having a discharge current larger than that of normal glow discharge is produced.

    BUBBLE MAGNETIC DOMAIN TRANSFERRING PATTERN

    公开(公告)号:JPH01166389A

    公开(公告)日:1989-06-30

    申请号:JP32294787

    申请日:1987-12-22

    Applicant: FUJITSU LTD

    Inventor: AMATSU MASASHI

    Abstract: PURPOSE:To improve a start stop characteristic by causing the length of the exit side element piece of a transferring path pattern, which is arranged in a direction that an attracting magnetic pole is induced to the exit side element piece and an entrance side element piece by a hold magnetic field, to be shorter than the exit side element piece of the transferring path pattern to be arranged in a direction, in which a restitution magnetic pole is induced. CONSTITUTION:The length of an exit side element piece A' of a transferring path pattern (forth part) 10' to be arranged in the direction, in which the attracting magnetic pole is induced to an entrance side element piece A' and an exit side element piece B' by the hold magnetic field, is caused to be shorter than the length of an exit side element piece A of a transferring path (back path) 10 to be arranged in the direction, in which the restitution magnetic pole is induced. Accordingly, the length of the exit side element piece A' of the forth path pattern goes to be shorter the entrance side element piece B' and for a bubble, a driving magnetic field phase goes to be fast to move from the exit side element piece A' to the entrance side element piece B'. Then, when a driving magnetic field achieves a start stop phase, all the bubbles on the forth path can be led into the stable entrance side element piece B'. Thus, the start stop characteristic can be improved.

    PRODUCING METHOD FOR HYBRID MAGNETIC BUBBLE MEMORY ELEMENT

    公开(公告)号:JPS63279485A

    公开(公告)日:1988-11-16

    申请号:JP11360787

    申请日:1987-05-12

    Applicant: FUJITSU LTD

    Inventor: AMATSU MASASHI

    Abstract: PURPOSE:To facilitate the transferring of a bubble at a connecting part by locally and optionally condensed-heating only the border part between of an ion implantation and transmission line and a permalloy transmission line with the aid of a microlens array, putting a taper at the edge part of a register pattern and putting inclination at the edge part of an ion implantation mask. CONSTITUTION:For example, the taper 3a is formed by locally and optionally condensed-heating the edge part of the register pattern 3 with the aid of the microlens array 7 and melting it and the taper 4a is formed at the edge part of the ion implantation mask 4 as well by the taper 3a. Besides, by the taper 4a, the taper 6b is formed at the border part of an ion implantation pattern 6 as well when the ion is implanted. Therefore as a potential barrier at the border part is made to be shallow by the taper 6b, the bubble can be easily passed through.

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