Semiconductor inductors
    45.
    发明授权

    公开(公告)号:US11127813B2

    公开(公告)日:2021-09-21

    申请号:US16617548

    申请日:2017-06-30

    Abstract: The present disclosure is directed to systems and methods for fabricating a semiconductor inductor that includes a coil deposited on a stop layer that is deposited on a sacrificial substrate. The semiconductor inductor may be fabricated on a silicon wafer and singulated. The sacrificial substrate beneficially provides structural support for the singulated semiconductor inductor. The singulated semiconductor inductor advantageously requires minimal active die surface area. The removal of the sacrificial substrate after coupling to the active die beneficially reduces the overall thickness (or height) of the semiconductor package, providing a decided advantage in low profile, portable, electronic devices.

    Contact pads for integrated circuit packages

    公开(公告)号:US09299672B2

    公开(公告)日:2016-03-29

    申请号:US14280110

    申请日:2014-05-16

    Abstract: Disclosed herein are contact pads for use with integrated circuit (IC) packages. In some embodiments, a contact pad disclosed herein may be disposed on a substrate of an IC package, and may include a metal projection portion and a metal recess portion. Each of the metal projection portion and the metal recess portion may have a solder contact surface. The solder contact surface of the metal recess portion may be spaced away from the solder contact surface of the metal projection portion. Related devices and techniques are also disclosed herein, and other embodiments may be claimed.

    Microelectronic assemblies having topside power delivery structures

    公开(公告)号:US12243828B2

    公开(公告)日:2025-03-04

    申请号:US17355770

    申请日:2021-06-23

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

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