公开(公告)号：US08673796B2

公开(公告)日：2014-03-18

申请号：US13262311

申请日：2010-03-31

Applicant: Masashi Yoshimura ,  Masaki Fukuma ,  Yutaka Tsuji ,  Shigeru Nakayama

Inventor： Masashi Yoshimura ,  Masaki Fukuma ,  Yutaka Tsuji ,  Shigeru Nakayama

IPC: C04B35/00

CPC classification number: C04B35/443 ,  C04B35/62635 ,  C04B35/63416 ,  C04B35/63448 ,  C04B35/63488 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9653

Abstract: To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

Abstract translation: 为了提供由尖晶石烧结体制成的透光窗材料，其中包含在透光窗材料中的最大直径的孔不大于100μm，并且具有最大直径不小于10的孔数 每1cm 3的透光窗材料的母体不超过2.0，进一步减少光散射因子，以及包括制备尖晶石成型体的尖晶石透光窗材料的方法。 在1500〜1900℃的温度下，在常压或以下或真空中烧结尖晶石成型体的一次烧结工序。 以及二次烧结工序，在1500〜2000℃的温度范围内的压力下烧结尖晶石成形体，其中，一次烧结工序后的尖晶石成型体的相对密度为95〜96％，相对密度 的二次烧结步骤后的尖晶石成型体为99.8％以上。

公开(公告)号：US20130040442A1

公开(公告)日：2013-02-14

申请号：US13643206

申请日：2011-11-10

Applicant: Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

Inventor： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC: H01L21/20

CPC classification number: H01L33/007 ,  H01L21/76256 ,  H01L33/0079

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract translation: 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

公开(公告)号：US08187507B2

公开(公告)日：2012-05-29

申请号：US12514836

申请日：2007-11-14

Applicant: Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

Inventor： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

IPC: H01B1/06 ,  C01G15/00

CPC classification number: C30B29/406 ,  C30B19/02 ,  Y10T117/1024

Abstract: A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

Abstract translation: 提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。 本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序 互相反应。 根据本发明的制造方法，能够防止成核，如图1所示， 如图4所示，可以生长非极性表面。

公开(公告)号：US20120093713A1

公开(公告)日：2012-04-19

申请号：US13262311

申请日：2010-03-31

Applicant: Masashi Yoshimura ,  Masaki Fukuma ,  Yutuka Tsuji ,  Shigiru Nakayama

Inventor： Masashi Yoshimura ,  Masaki Fukuma ,  Yutuka Tsuji ,  Shigiru Nakayama

IPC: C01F7/02 ,  C04B35/64

CPC classification number: C04B35/443 ,  C04B35/62635 ,  C04B35/63416 ,  C04B35/63448 ,  C04B35/63488 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9653

Abstract: To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.

Abstract translation: 为了提供一种由尖晶石烧结体制成的透光窗材料，其中包含在透光窗材料中的最大直径的孔不大于100μm，并且具有最大直径不小于10的孔数 μm为1cm 3以下的透光窗材料不超过2.0，进一步减少光散射因子，以及包括制备尖晶石成型体的尖晶石透光窗材料的方法。 在1500〜1900℃的温度下，在常压或以下或真空中烧结尖晶石成型体的一次烧结工序。 以及二次烧结工序，在1500〜2000℃的温度范围内的压力下烧结尖晶石成形体，其中，一次烧结工序后的尖晶石成型体的相对密度为95〜96％，相对密度 的二次烧结步骤后的尖晶石成型体为99.8％以上。

公开(公告)号：US20110272734A1

公开(公告)日：2011-11-10

申请号：US13144696

申请日：2009-11-11

Applicant: Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

Inventor： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

IPC: H01L33/30

CPC classification number: C30B25/18 ,  C30B29/403 ,  H01L33/007

Abstract: The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α2, then (α1−α2)/α2 is between −0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

Abstract translation: 本发明是一种使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配备透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的 和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。 使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为α1，氮化物系化合物半导体薄膜的热膨胀系数为α2，则α1-α2/α2为 在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。 透明基板10的绝对折射率优选在氮化物系化合物半导体薄膜的绝对折射率的60％〜140％的范围内。

公开(公告)号：US08038794B2

公开(公告)日：2011-10-18

申请号：US11628253

申请日：2005-04-15

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC: C30B29/38

CPC classification number: C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

Abstract: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Abstract translation: 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US20100252950A1

公开(公告)日：2010-10-07

申请号：US12743778

申请日：2008-11-21

Applicant: Masashi Yoshimura ,  Akihito Fujii ,  Shigeru Nakayama

Inventor： Masashi Yoshimura ,  Akihito Fujii ,  Shigeru Nakayama

IPC: C04B41/81

CPC classification number: C04B41/87 ,  C04B35/443 ,  C04B41/009 ,  C04B41/4529 ,  C04B2111/80 ,  G02F1/1303 ,  G02F2201/38 ,  C04B41/5055 ,  C04B41/5027 ,  C04B41/5041 ,  C04B35/00

Abstract: There is provided a method of producing a polycrystalline transparent ceramic substrate used in a transparent substrate or the like for a liquid crystal projector. The method of producing a polycrystalline transparent ceramic substrate is characterized in comprising a step for sintering a ceramic body molded into a predetermined shape and producing a polycrystalline transparent ceramic sintered body, a step for cutting the polycrystalline transparent ceramic sintered body and producing a plurality of polycrystalline transparent ceramic cut bodies, a step for polishing the cut surfaces of the polycrystalline transparent ceramic cut bodies and producing polycrystalline transparent ceramic polished bodies, and a step for applying an antireflection coating to the polycrystalline transparent ceramic polished bodies and producing coated polycrystalline transparent ceramic bodies.

Abstract translation: 提供一种用于液晶投影仪的透明基板等中使用的多晶透明陶瓷基板的制造方法。 多晶透明陶瓷基板的制造方法的特征在于，包括将模制成规定形状的陶瓷体烧结并制造多晶透明陶瓷烧结体的工序，切断多晶透明陶瓷烧结体的工序，制造多个多晶体 透明陶瓷切割体，用于抛光多晶透明陶瓷切割体的切割表面并制造多晶透明陶瓷抛光体的步骤，以及将抗反射涂层施加到多晶透明陶瓷抛光体并制造涂覆的多晶透明陶瓷体的步骤。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

Applicant: Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

Inventor： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC: C30B25/12

CPC classification number: C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

Abstract: The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

Abstract translation: 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US07361220B2

公开(公告)日：2008-04-22

申请号：US10809033

申请日：2004-03-25

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC classification number: C30B23/02 ,  C30B29/403 ,  C30B29/406

Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

Abstract translation: 本发明提供一种制造氮化镓单晶的方法，其可以抑制氮化镓的分解并提高升华方法中的生产效率。 根据制造方法，将用于氮化镓（GaN）单晶的材料（GaN粉末）放置在坩埚内部，通过加热升华或蒸发，并在衬底表面上冷却以再次返回到固体，使得镓 氮化物单晶生长在衬底表面上。 单晶的生长在压力下进行。 压力优选为5atm以上（5×1.013×10 -5 Pa）。 单晶优选在含有NH 3和N 2 N的混合气体气氛中生长。

公开(公告)号：US07142354B2

公开(公告)日：2006-11-28

申请号：US10511170

申请日：2001-12-12

Applicant: Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

Inventor： Tetsuo Kojima ,  Susumu Konno ,  Shuichi Fujikawa ,  Koji Yasui ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC: G02F1/35 ,  H01S3/108

CPC classification number: G02F1/3501 ,  G02F2001/3505

Abstract: In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.

Abstract translation: 在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。 波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。 激光加工装置包括波长转换装置。