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    STRAHLUNGSDETEKTOR
    41.
    发明公开
    STRAHLUNGSDETEKTOR 审中-公开

    公开(公告)号：EP1730787A1

    公开(公告)日：2006-12-13

    申请号：EP05738727.6

    申请日：2005-03-10

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： JAEGER, Arndt ,  STAUSS, Peter ,  WINDISCH, Reiner

    IPC: H01L31/0216 ,  H01L31/068

    CPC classification number: H01L31/02162 ,  H01L31/0687 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A radiation detector is disclosed, for the detection of radiation (8), with a given spectral sensitivity distribution (9), which has a maximum at a given wavelength λo, comprising a semiconductor body (1) with an active region (5), provided for detector signal generation and for the incident radiation. In one embodiment, the active region (5) comprises a number of functional layers (4a, 4b, 4c, 4d), with differing band gaps and/or thicknesses and embodied such that said layers (4a, 4b, 4c, 4d) at least partly absorb radiation at a wavelength greater than λo. In a further embodiment, a filter layer structure (70) is arranged after the active region, comprising at least one filter layer (7, 7a, 7b, 7c). The filter layer structure determines the short wave side (101) of the detector sensitivity (10), according to the given spectral sensitivity distribution (9), by means of absorption of wavelengths less than λo. A radiation detector for the detection of radiation (8), according to the spectral sensitivity distribution (9) of the human eye is also disclosed. The semiconductor body can be monolithically integrated.

    Abstract translation: 公开了一种用于检测辐射（8）的辐射检测器，其具有在给定波长λ0处具有最大值的给定的光谱灵敏度分布（9），该辐射检测器包括具有有源区域（5）的半导体主体（1） 提供用于检测器信号生成和入射辐射。 在一个实施例中，有源区（5）包括多个具有不同带隙和/或厚度的功能层（4a，4b，4c，4d），并且体现为使得所述层（4a，4b，4c，4d） 至少部分吸收波长大于λ0的辐射。 在另一实施例中，滤波器层结构（70）被布置在有源区之后，包括至少一个滤波器层（7,7a，7b，7c）。 根据给定的光谱灵敏度分布（9），通过吸收小于λ0的波长，滤波器层结构确定检测器灵敏度（10）的短波侧（101）。 还公开了根据人眼的光谱灵敏度分布（9）来检测辐射（8）的辐射检测器。 半导体本体可以单片集成。

    STRAHLUNGEMITTIERENDES HALBLEITERBAUELEMENT
    42.
    发明公开
    STRAHLUNGEMITTIERENDES HALBLEITERBAUELEMENT 有权
    辐射的半导体器件

    公开(公告)号：EP1658643A1

    公开(公告)日：2006-05-24

    申请号：EP04762553.8

    申请日：2004-07-30

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： STEIN, Wilhelm ,  WINDISCH, Reiner ,  WIRTH, Ralph ,  PIETZONKA, Ines

    IPC: H01L33/00

    CPC classification number: H01L33/40 ,  H01L33/02

    Abstract: The invention relates to a radiation emitting semi-conductor element with a semi-conductor body, comprising a first main surface (5), a second main surface (9) and a semi-conductor layer sequence (4) with an active zone (7) generating electromagnetic radiation. The semi-conductor layer sequence (4) is arranged between the first and the second main surface (5,9), a first current expansion layer (3) is arranged on the first main surface (5) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4) and a second current expansion layer (10) is arranged on the second main surface (9) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4).

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