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    ELECTRONIC DEVICES
    44.
    发明公开
    ELECTRONIC DEVICES 审中-公开
    电子器件

    公开(公告)号：EP1665355A2

    公开(公告)日：2006-06-07

    申请号：EP04768442.8

    申请日：2004-09-10

    Applicant: Plastic Logic Limited

    Inventor： CAIN, Paul, A. ,  SIRRINGHAUS, Henning ,  STONE, Nicholas J. ,  BROWN, Thomas, M.

    IPC: H01L21/32

    Abstract: An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.

    SOLUTION PROCESSING
    49.
    发明公开
    SOLUTION PROCESSING 审中-公开
    处理液相

    公开(公告)号：EP1243033A1

    公开(公告)日：2002-09-25

    申请号：EP00983403.7

    申请日：2000-12-21

    Applicant: Plastic Logic Limited ,  SEIKO EPSON CORPORATION

    Inventor： SIRRINGHAUS, Henning ,  FRIEND, Richard, Henry ,  KAWASE, Takeo

    IPC: H01L51/40 ,  H01L51/20

    CPC classification number: H01L51/52 ,  B82Y30/00 ,  H01L21/31133 ,  H01L21/76838 ,  H01L27/283 ,  H01L27/32 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/0018 ,  H01L51/002 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0059 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    Abstract: A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality of regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being electrically separated in their plane by means of the relative repellence of the first zone and to be absent from the first area of the substrate so as to resist the flow across the first zone of electrical current between the spaced apart regions of the deposited material.

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