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    MAGNESIUM ALLOY, PREPAIRING METHOD AND USE THEREOF
    42.
    发明申请
    MAGNESIUM ALLOY, PREPAIRING METHOD AND USE THEREOF 审中-公开
    镁合金，预处理方法及其应用

    公开(公告)号：WO2016000575A1

    公开(公告)日：2016-01-07

    申请号：PCT/CN2015/082552

    申请日：2015-06-26

    Applicant: BYD COMPANY LIMITED

    Inventor： ZHANG, Faliang ,  REN, Youping ,  GONG, Qing

    IPC: C22C23/00 ,  C22C23/02 ,  C22C23/04 ,  C22C23/06

    CPC classification number: C22C23/00 ,  C22C23/02 ,  C22C23/04 ,  C22C23/06

    Abstract: A magnesium alloy is provided, based on a total weight of the magnesium alloy, comprising: about 0.2-1.35wt％of Al; about 0.05-3wt％of Mn; about 0.1-2wt％of Si; about 0-0.005wt％of Fe; about 0-0.01wt％of Cu; about 0-0.01wt％of Ni; about 0-0.01wt％of Co; about 0-1wt％of a rare earth element; about 0-1wt％of Zn; about 0-0.1wt％of Be; about 0-1wt％of Zr; about 0-0.005wt％of Ca; 0-0.005wt％of Sn: and about 90.505-99.65wt％of Mg.

    Abstract translation: 基于镁合金的总重量提供镁合金，其包含：约0.2-1.35重量％的Al; 约0.05-3wt％的Mn; 约0.1-2重量％的Si; 约0-0.005重量％的Fe; 约0-0.01重量％的Cu; 约0-0.01重量％的Ni; 约0-0.01重量％的Co; 约0-1wt％的稀土元素; 约0-1wt％的Zn; 约0-0.1重量％的Be; 约0-1wt％的Zr; 约0-0.005wt％的Ca; 0-0.005重量％的Sn和约90.505-99.65重量％的Mg。

    Zr-BASED AMORPHOUS ALLOY AND PREPARING METHOD THEREOF
    43.
    发明申请
    Zr-BASED AMORPHOUS ALLOY AND PREPARING METHOD THEREOF 审中-公开
    基于Zr的非晶合金及其制备方法

    公开(公告)号：WO2011050680A1

    公开(公告)日：2011-05-05

    申请号：PCT/CN2010/077758

    申请日：2010-10-14

    Applicant: BYD COMPANY LIMITED ,  GONG, Qing ,  ZHANG, Faliang ,  JIAN, Yongxi

    Inventor： GONG, Qing ,  ZHANG, Faliang ,  JIAN, Yongxi

    IPC: C22C45/10 ,  C22C1/02

    CPC classification number: C22C45/10 ,  B22D27/003 ,  B22D27/15 ,  C22C1/002 ,  C22C1/02 ,  C22C16/00

    Abstract: A Zr-based amorphous alloy and a method for preparing the same are provided. The Zr-based amorphous alloy may be represented by the general formula of (Zr a Al b Cu c Ni d ) 1oo-e-f Y e M f . a, b, c, and d are atomic fractions, in which: 0.472≤a≤0.568, 0.09≤b≤0.11, 0.27≤c≤0.33, 0.072≤d≤0.088 and the sum of a, b, c, and d equals to 1. e and f are atomic numbers of elements Y and M respectively, in which 0

    Abstract translation: 提供了一种Zr基非晶合金及其制备方法。 Zr基非晶合金可以由通式（ZraAlbCucNid）1oo-e-fYeMf表示。 a，b，c和d是原子级分，其中：0.472 = a = 0.568,0.09 = b = 0.11,0.27 = c = 0.33,0.072 = d = 0.088，a，b，c和d的和 等于1.e和f分别是元素Y和M的原子序数，其中0

    METAL FORMING APPARATUS
    46.
    发明申请
    METAL FORMING APPARATUS 审中-公开
    金属成型设备

    公开(公告)号：WO2015058611A1

    公开(公告)日：2015-04-30

    申请号：PCT/CN2014/087916

    申请日：2014-09-30

    Applicant: BYD COMPANY LIMITED

    Inventor： GONG, Qing ,  ZHAO, Shuming ,  WANG, Yanan ,  CHEN, Qiuhui ,  WANG, Xiaohua ,  TANG, Liuping

    IPC: B22D17/04 ,  B22D17/14

    CPC classification number: B22D17/10 ,  B22D17/14 ,  B22D17/2023 ,  B22D17/32 ,  B22D27/15 ,  F27B3/06 ,  F27B3/085 ,  F27B3/24 ,  F27B14/04 ,  F27B14/06 ,  F27B14/14 ,  F27B2014/002 ,  F27B2014/045 ,  F27B2014/068 ,  F27B2014/0837 ,  F27B2014/0887 ,  F27D1/12 ,  F27D3/12 ,  F27D7/06 ,  F27D11/10 ,  F27D19/00 ,  F27D21/0035 ,  F27D2007/066

    Abstract: A metal forming apparatus (1000) includes a smelting device (5), a molding device (10), an injection device (8) and a vacuumizing device (3). The smelting device (5) defines a smelting chamber (501), and includes a rotatable crucible (502) and a heating unit (003) both disposed within the smelting chamber (501). The molding device (10) defines a molding chamber sealedly communicated with the smelting chamber (501). The injection device (8) includes a charging barrel assembly (81) sealedly disposed at a joint between the molding device (10) and the smelting device (5) and an injection unit sealedly connected with the smelting device (5). The vacuumizing device (3) is sealedly connected with the smelting device (5) and the molding device (10) respectively so as to vacuumize the smelting chamber (501) and the molding chamber. The space volume which needs to be vacuumized is greatly reduced, thereby being favorable for guaranteeing the leakproofness and the pressure maintaining performance of a vacuum space.

    Abstract translation: 金属成形装置（1000）包括熔炼装置（5），成型装置（10），注射装置（8）和抽真空装置（3）。 冶炼装置（5）限定了冶炼室（501），并且包括可旋转坩埚（502）和均设置在冶炼室（501）内的加热单元（003）。 成型装置（10）限定与熔融室（501）密封连通的模制室。 注射装置（8）包括密封地设置在模制装置（10）和冶炼装置（5）之间的接头处的充注筒组件（81）和与冶炼装置（5）密封连接的注射单元。 抽真空装置（3）分别与冶炼装置（5）和成型装置（10）密封连接，以使熔炼室（501）和模制室真空。 需要抽真空的空间体积大大降低，有利于保证真空空间的防漏性和保压性。

    A DEVELOPER SOLUTION FOR PHOTORESIST
    49.
    发明申请
    A DEVELOPER SOLUTION FOR PHOTORESIST 审中-公开
    光电开发者解决方案

    公开(公告)号：WO2007028294A1

    公开(公告)日：2007-03-15

    申请号：PCT/CN2006/001031

    申请日：2006-05-19

    Applicant: BYD COMPANY LIMITED ,  JIN, Qiming ,  CHEN, Xuegang ,  DONG, Junqing ,  GONG, Qing ,  HE, Zhiqi

    Inventor： JIN, Qiming ,  CHEN, Xuegang ,  DONG, Junqing ,  GONG, Qing ,  HE, Zhiqi

    IPC: G03F7/32

    CPC classification number: G03F7/322

    Abstract: Disclosed herein is a developer solution for photoresist comprising a basic compound, a surfactant, and a solvent, wherein said surfactant is surfactant (A) comprising a polyoxyethylene phenyl ether represented by formula (I) and a polyoxyethylene phenyl ether represented by formula (II), and/or surfactant (B) being a Gemini type surfactant represented by formula (III) The developer solution of the present invention has excellent development performance, defoaming performance, dispersion stability, and operation temperature, and the pattern has no residue.

    Abstract translation: 本文公开了包含碱性化合物，表面活性剂和溶剂的光致抗蚀剂的显影剂溶液，其中所述表面活性剂是包含由式（I）表示的聚氧乙烯苯基醚和由式（II）表示的聚氧乙烯苯基醚的表面活性剂（A） ，和/或表面活性剂（B）是由式（III）表示的双子型表面活性剂。本发明的显影液具有优异的显影性能，消泡性能，分散稳定性和操作温度，并且图案无残留。

    BASE PLATE FOR HEAT SINK AS WELL AS HEAT SINK AND IGBT MODULE HAVING THE SAME
    50.
    发明申请
    BASE PLATE FOR HEAT SINK AS WELL AS HEAT SINK AND IGBT MODULE HAVING THE SAME 审中-公开
    散热片基板和散热片以及IGBT模块相同

    公开(公告)号：WO2017071652A1

    公开(公告)日：2017-05-04

    申请号：PCT/CN2016/103806

    申请日：2016-10-28

    Applicant: BYD COMPANY LIMITED

    Inventor： GONG, Qing ,  SUN, Yaxuan ,  LIN, Xinping ,  ZHAO, Shuming ,  WU, Bo ,  LUO, Jingjing ,  CHENG, Donghai

    IPC: H05K7/20

    CPC classification number: H05K7/20 ,  H01L23/473

    Abstract: A base plate for a heat sink as well as a heat sink and an IGBT module having the same are provided. The base plate includes: a base plate body, including a body part; and a first surface layer and a second surface layer disposed respectively on two opposing surfaces of the body part; and N pins disposed on the first surface layer and spaced apart from one another, each pin having a first end fixed on the first surface layer and a second end configured as a free end, in which the first surface layer and the N pins are configured to contact a coolant, an area of a first portion of the first surface layer contacting the coolant is denoted as S1, and an area of a second portion of the first surface layer contacting each pin is denoted as S2, in which 180≤S1/S2≤800, and 300≤N

    Abstract translation: 提供了一种用于散热器的基板以及具有该基板的散热器和IGBT模块。 基板包括：基板主体，其包括主体部分; 以及分别设置在所述主体部分的两个相对表面上的第一表面层和第二表面层; 以及N个销，所述N个销设置在所述第一表面层上并且彼此间隔开，每个销具有固定在所述第一表面层上的第一端和构造为自由端的第二端，其中配置所述第一表面层和所述N个销 接触冷却剂时，第一表面层的与冷却剂接触的第一部分的面积表示为S1，并且接触每个销的第一表面层的第二部分的面积表示为S2，其中180≤S1/ S2≤800，并且300≤N<650。

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