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    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE
    42.
    发明申请
    ETCHED FACET IN A MULTI QUANTUM WELL STRUCTURE 审中-公开

    公开(公告)号：US20200233150A1

    公开(公告)日：2020-07-23

    申请号：US16690483

    申请日：2019-11-21

    Applicant: Skorpios Technologies, Inc.

    Inventor： Paveen Apiratikul ,  Damien Lambert

    IPC: G02B6/12 ,  G02B6/136

    Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

    Method and system for widely tunable laser
    45.
    发明授权
    Method and system for widely tunable laser 有权

    公开(公告)号：US09917417B2

    公开(公告)日：2018-03-13

    申请号：US15285042

    申请日：2016-10-04

    Applicant: Skorpios Technologies, Inc.

    Inventor： Guoliang Li ,  Stephen B. Krasulick ,  Damien Lambert

    IPC: H01S5/00 ,  H01S5/068 ,  H01S5/02 ,  H01S5/022 ,  H01S5/40

    CPC classification number: H01S5/068 ,  H01S5/021 ,  H01S5/02284 ,  H01S5/0268 ,  H01S5/4012 ,  H01S5/4087

    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER
    48.
    发明申请
    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER 有权

    公开(公告)号：US20170110850A1

    公开(公告)日：2017-04-20

    申请号：US15285042

    申请日：2016-10-04

    Applicant: Skorpios Technologies, Inc.

    Inventor： Guoliang Li ,  Stephen B. Krasulick ,  Damien Lambert

    IPC: H01S5/068 ,  H01S5/02 ,  H01S5/022 ,  H01S5/40

    CPC classification number: H01S5/068 ,  H01S5/021 ,  H01S5/02284 ,  H01S5/0268 ,  H01S5/4012 ,  H01S5/4087

    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

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