INTEGRATION OF AN UNPROCESSED, DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE
    43.
    发明申请
    INTEGRATION OF AN UNPROCESSED, DIRECT-BANDGAP CHIP INTO A SILICON PHOTONIC DEVICE 审中-公开
    将不受约束的直接带状芯片集成到硅光电器件

    公开(公告)号:US20160274319A1

    公开(公告)日:2016-09-22

    申请号:US15073957

    申请日:2016-03-18

    Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermetically seals the chip in the platform.

    Abstract translation: 用于在两种或多种材料上分离光子功能的复合器件包括平台,芯片和将芯片固定到平台的接合。 平台包括基层和器件层。 器件层包括硅并且具有露出基底层的一部分的开口。 该芯片,材料包括有源区(例如,用于激光的增益介质)。 芯片被接合到由开口暴露的基层的部分,使得芯片的有源区域与平台的器件层对准。 涂层将芯片密封在平台上。

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