公开(公告)号：JP2013115413A

公开(公告)日：2013-06-10

申请号：JP2011263508

申请日：2011-12-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMANE KAZUAKI ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  ASAYAMA TETSUYA ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/161

Abstract: PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by reducing asymmetry of thermal stability about the information writing direction.SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming a reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, magnetization of the storage layer changes thus recording the information in the storage layer. The magnetization fixed layer includes a multilayer ferri-pin structure having at least two layers of a ferromagnetic layer and a non-magnetic layer, and an antiferromagnetic oxide layer is formed in contact with any ferromagnetic layer.

Abstract translation: 要解决的问题：通过减少关于信息写入方向的热稳定性的不对称性来提供具有优异特性平衡的存储元件。 解决方案：存储元件包括具有垂直于膜表面的磁化的存储层和对应于信息变化的磁化取向的层结构，具有垂直于膜表面的磁化的磁化固定层变为参考 存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的中间层。 当在层结构的层叠方向上馈送电流时，存储层的磁化改变，从而将信息记录在存储层中。 磁化固定层包括具有至少两层铁磁层和非磁性层的多层铁 - 引线结构，并且反铁磁性氧化物层形成为与任何铁磁层接触。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013115400A

公开(公告)日：2013-06-10

申请号：JP2011263288

申请日：2011-12-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMANE KAZUAKI ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  ASAYAMA TETSUYA ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  H01F10/16 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by ensuring thermal stability.SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming the reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, the orientation of magnetization of the storage layer changes thus recording the information in the storage layer. The storage layer has at least a Co-Fe-B magnetic layer. The intermediate layer in contact with the storage layer and the other layer in contact with the storage layer on the reverse side of the intermediate layer have a boundary surface of an oxide layer at least in contact with the storage layer, and the oxide layer of the other layer is an Li-based oxide layer containing Li.

Abstract translation: 要解决的问题：通过确保热稳定性来提供具有优异特性平衡的存储元件。 解决方案：存储元件包括具有垂直于膜表面的磁化的存储层和对应于信息变化的磁化取向的层结构，具有垂直于膜表面的磁化的磁化固定层变为参考 存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的中间层。 当在层结构的层叠方向上馈送电流时，存储层的磁化方向改变，从而将信息记录在存储层中。 存储层至少具有Co-Fe-B磁性层。 与存储层接触的中间层和与中间层的相反侧的存储层接触的另一层具有至少与存储层接触的氧化物层的边界表面，并且 其他层是含有Li的Li基氧化物层。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013115319A

公开(公告)日：2013-06-10

申请号：JP2011261854

申请日：2011-11-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： UCHIDA HIROYUKI ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI

IPC: H01L21/8246 ,  G11B5/31 ,  G11C11/15 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

CPC classification number: H01L43/02 ,  G01R33/093 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L27/2481 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by ensuring thermal stability.SOLUTION: The storage element includes a layer structure having a storage layer that has magnetization perpendicular to the film surface and orientation of magnetization which changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to the film surface becoming a reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. The storage layer includes a multilayer structure layer laminating a non-magnetic material and an oxide, and when a current is fed in the lamination direction of the layer structure, orientation of magnetization of the storage layer changes thus recording information in the storage layer.

Abstract translation: 要解决的问题：通过确保热稳定性来提供具有优异特性平衡的存储元件。 解决方案：存储元件包括具有垂直于膜表面的磁化的存储层和对应于信息而改变的磁化取向的层结构，具有垂直于膜表面的磁化的磁化固定层变为 存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的中间层。 存储层包括层叠非磁性材料和氧化物的多层结构层，并且当电流沿着层结构的层叠方向进给时，存储层的磁化取向改变，从而将记录信息记录在存储层中。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013115318A

公开(公告)日：2013-06-10

申请号：JP2011261853

申请日：2011-11-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI

IPC: H01L43/08 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/82

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a memory element which can perform a writing operation in a short time without causing writing error.SOLUTION: A memory element is constructed to include a layer structure having: a memory layer in which a magnetization direction is changed according to information; an intermediate layer made of nonmagnetic material; and a magnetization fixed layer which is provided onto the memory layer via the intermediate layer and in which a magnetization direction is fixed. In the memory layer, at least two ferromagnetic layers are laminated with a coupling layer interposed therebetween, the two ferromagnetic layers are magnetically coupled to each other via the coupling layer, and each magnetization direction in the two ferromagnetic layers is inclined from a direction perpendicular to a film surface. By flowing a current in a lamination direction in the layer structure, a magnetization state in the memory layer is changed, thereby recording information in the memory layer.

Abstract translation: 要解决的问题：提供可以在短时间内执行写入操作而不引起写入错误的存储元件。 解决方案：存储元件被构造为包括具有：根据信息使磁化方向改变的存储层的层结构; 由非磁性材料制成的中间层; 以及经由所述中间层提供到所述存储层上并且固定有磁化方向的磁化固定层。 在存储层中，至少两个铁磁层层叠有耦合层，两个铁磁层经由耦合层彼此磁耦合，并且两个铁磁层中的每个磁化方向从垂直于 一个电影表面。 通过在层结构中沿层叠方向流动电流，改变存储层中的磁化状态，从而将信息记录在存储层中。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012253207A

公开(公告)日：2012-12-20

申请号：JP2011124945

申请日：2011-06-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： BESSHO KAZUHIRO ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  HIGO YUTAKA ,  YAMANE KAZUAKI ,  ASAYAMA TETSUYA ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a reliable memory element that has resistance against external radiation, and stably operates without causing erroneous operation.SOLUTION: The memory element includes a memory layer that retains information by a magnetization state of a magnetic body, a magnetization fixed layer having the magnetization serving as a reference for information stored in the memory layer, and an intermediate layer comprising a non-magnetic body and arranged between the memory layer and the magnetization fixed layer. The information is stored by inverting the magnetization of the memory layer by utilizing spin torque magnetization inversion generated by a current flowing in a lamination direction of a layer structure having the memory layer, the intermediate layer, and the magnetization fixed layer. The memory layer includes a ferromagnetic layer containing B, and an isotope ratio of 10B contained in the B is smaller than 19.9% which is observed in the nature.

Abstract translation: 要解决的问题：提供具有抵抗外部辐射的可靠的存储元件，并且稳定地操作而不引起错误的操作。 解决方案：存储元件包括通过磁体的磁化状态保持信息的存储层，具有作为存储在存储层中的信息的参考的磁化的磁化固定层，以及包括非磁性材料的中间层 磁体并且布置在存储层和磁化固定层之间。 通过利用由具有存储层，中间层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。 存储层包括含有B的铁磁层，B中所含的同位素比率B小于19.9％，这在本质上是观察到的。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012244030A

公开(公告)日：2012-12-10

申请号：JP2011114439

申请日：2011-05-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a spin torque magnetic memory which inhibits variation in thermal stability and an inversion current.SOLUTION: A storage element comprises: a storage layer holding information by a magnetization state of a magnetic substance; a magnetization fixed layer having magnetization which serves as reference for information stored in the storage layer; and an intermediate layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. The storage element stores information by inverting magnetization of the storage layer by utilizing spin torque magnetization reversal occurring in association with a current flowing in a laminate direction. In this configuration, when assuming that saturation magnetization of the storage layer is Ms (emu/cc) and a film thickness of the storage layer is t (nm), the film thickness t of the storage layer satisfies (1489/Ms)-0.593

Abstract translation: 要解决的问题：提供抑制热稳定性和反转电流变化的自旋转矩磁存储器。 解决方案：存储元件包括：通过磁性物质的磁化状态保持信息的存储层; 具有作为存储在存储层中的信息的参考的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的中间层。 存储元件通过利用与在层叠方向上流动的电流相关联地发生的旋转转矩磁化反转来反转存储层的磁化来存储信息。 在该结构中，当假定存储层的饱和磁化强度为Ms（emu / cc）且存储层的膜厚度为t（nm）时，存储层的膜厚度t满足（1489 / Ms）-0.593

公开(公告)号：JP2012238631A

公开(公告)日：2012-12-06

申请号：JP2011104877

申请日：2011-05-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMORI HIROYUKI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI ,  ASAYAMA TETSUYA

IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01F10/3286 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/303 ,  H01F41/325 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To allow a spin torque type magnetic memory to increase anisotropic energy and have sufficient thermal fluctuation resistance even if microfabricated.SOLUTION: A memory element includes a MTJ structure consisting of: a memory layer which has magnetization perpendicular to the film surface and holds information by a magnetization state of a magnetic material; a magnetization fixed layer having magnetization perpendicular to the film surface serving as a reference for information stored in the memory layer; and an intermediate layer made of a nonmagnetic material provided between the memory layer and the magnetization fixed layer. In addition, the memory element also includes: a coercive force enhancement layer consisting of at least one of Cr, Ru, W, Si, and Mn adjacent to the memory layer; and a spin barrier layer made of an oxide adjacent to the coercive force enhancement layer.

Abstract translation: 要解决的问题：为了允许自旋扭矩型磁存储器增加各向异性能量，并且即使是微制造也具有足够的热波动阻力。 解决方案：存储元件包括MTJ结构，其包括：具有垂直于膜表面的磁化并通过磁性材料的磁化状态保持信息的存储层; 具有垂直于膜表面的磁化的磁化固定层用作存储在存储层中的信息的参考; 以及设置在存储层和磁化固定层之间的由非磁性材料制成的中间层。 此外，存储元件还包括：与存储层相邻的由Cr，Ru，W，Si和Mn中的至少一种构成的矫顽力增强层; 以及由与矫顽力增强层相邻的氧化物构成的自旋阻挡层。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012129225A

公开(公告)日：2012-07-05

申请号：JP2010276590

申请日：2010-12-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMORI HIROYUKI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI ,  ASAYAMA TETSUYA

IPC: H01L27/105 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L27/228 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/115

Abstract: PROBLEM TO BE SOLVED: To achieve a magnetic memory using a spin torque which can obtain vertical magnetization in heat treatment at a temperature in a range from about 300°C to 400°C and can be easily manufactured in a semiconductor process.SOLUTION: A memory element comprises a memory layer 17 having magnetization perpendicular to a film surface and a direction of magnetization changed corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film surface, which serves as a reference of information stored in the memory layer 17 and an insulation layer 16 of an oxide provided between the memory layer 17 and the magnetization fixed layer 15. At least one of the memory layer and the magnetization fixed layer is formed such that an Fe film and an Ni-contained film sequentially formed from the side of an interface bordering the insulation layer and a graded composition distribution in which a composition ratio of Fe to Ni on the interface side is larger is formed after heat treatment.

Abstract translation: 要解决的问题：使用能够在约300℃至400℃的温度范围内获得热处理中的垂直磁化的自旋转矩来实现磁存储器，并且可以容易地在半导体工艺中制造。 解决方案：存储元件包括具有垂直于膜表面的磁化和对应于信息变化的磁化方向的存储层17，具有垂直于膜表面的磁化的磁化固定层15，其用作信息的参考 存储在存储层17中的绝缘层16和设置在存储层17和磁化固定层15之间的氧化物的绝缘层16.形成存储层和磁化固定层中的至少一个，使得Fe膜和Ni- 在与热绝缘层相邻的界面侧依次形成的包含膜和在界面侧的Fe与Ni的组成比较大的分级组成分布。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012064611A

公开(公告)日：2012-03-29

申请号：JP2010205086

申请日：2010-09-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  OMORI HIROYUKI ,  HIGO YUTAKA ,  YAMANE ICHIYO ,  UCHIDA HIROYUKI

IPC: H01L27/105 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a storage element that can enhance perpendicular magnetic anisotropy and improve heat stability without increase in a write current.SOLUTION: A storage element 3 comprises a storage layer 17 having magnetization perpendicular to a film surface with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. The storage layer 17 includes a laminate structure of Co-Fe-B layers and a chemical element belonging to any one of the group 1a, group 2a, group 3a, group 5a and group 6, in which the thin film chemical element of 0.05 nm-0.3 nm per 1 nm thickness of the Co-Fe-B layer is inserted. Information is recorded in a storage layer 17 by injection of an electron spin polarized in a lamination direction of the laminate structure including the storage layer 17, the insulation layer 16 and the magnetization fixed layer 15. A magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17.

Abstract translation: 要解决的问题：提供一种可增强垂直磁各向异性并提高热稳定性而不增加写入电流的存储元件。 解决方案：存储元件3包括具有垂直于膜表面的磁化的存储层17，其具有对应于信息变化的磁化方向;具有垂直于膜面的磁化的磁化固定层15，其用作存储的信息的参考 存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.存储层17包括Co-Fe-B层和属于任意形式的化学元素的层叠结构 组1a，组2a，组3a，组5a和组6中的一个，其中插入Co-Fe-B层每1nm厚度为0.05nm-0.3nm的薄膜化学元素。 信息通过注入包含存储层17，绝缘层16和磁化固定层15的叠层结构的层叠方向的电子自旋极化记录在存储层17中。施加的有效抗磁场的大小 调节到存储层17的饱和磁化强度的大小。（C）2012，JPO＆INPIT

公开(公告)号：JP2012060062A

公开(公告)日：2012-03-22

申请号：JP2010204372

申请日：2010-09-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： UCHIDA HIROYUKI ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  YAMANE ICHIYO

IPC: H01L27/105 ,  H01L21/8246 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a storage element that can improve heat stability without increasing a writing current and enhance perpendicular magnetic anisotropy.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and composed of a plurality of magnetic layers forming a multilayered ferri-pin structure in which the magnetic layers are coupled in antiparallel with each other by a non-magnetic layer, and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. A magnetization direction of the storage layer 17 is varied by injection of an electron spin polarized in a lamination direction, to record information. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17.

Abstract translation: 要解决的问题：提供一种可以提高热稳定性而不增加写入电流并增强垂直磁各向异性的存储元件。 解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在 存储层17由多层磁性层构成，其中磁性层通过非磁性层彼此反平行地耦合而形成多层铁引线结构，以及设置在非磁性层之间的非磁性材料的绝缘层16 存储层17和磁化固定层15.存储层17的磁化方向通过在层叠方向上注入电子自旋极化而变化，以记录信息。 这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。（C）2012，JPO和INPIT