公开(公告)号：JPH11121454A

公开(公告)日：1999-04-30

申请号：JP28073097

申请日：1997-10-14

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, by which conductive material is buried in a contact hole, plug loss is suppressed without leaving the conductive material outside of the contact hole and without lowering its productivity to thereby form a highly-reliable buried wiring layer. SOLUTION: An insulating film 20 is formed on a wiring layer formed on a substrate 10, and a contact hole for exposure of the wiring layer is made in the insulating film 20. Next, a conductive layer 30 is formed at a first film deposition rate in the contact hole and on the insulating film 20, the layer 30 being formed at a film deposition rate higher than the first rate. Thereafter, the conductive layer 30 outside of the hole is removed.

公开(公告)号：JPH1116837A

公开(公告)日：1999-01-22

申请号：JP16363997

申请日：1997-06-20

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To improve productivity and quality of film formation by constructing at least one of the outer tube and the inner tube of a reduced-pressure CVD apparatus from an infrared absorbing material. SOLUTION: An outer tube 11 and an inner tube 12, which are conventionally made of transparent quartz, of a reduced-pressure CVD apparatus are constructed from SiC which is a material having an infrared absorbing characteristic. The upper end surface of the outer tube 11 is sealed and the lower end surface thereof is opened. The lower end surface of the outer tube 11 is air- tightly and removably placed on an upper flange 4a formed on the upper end surface of a cylindrical furnace port 4. Further, a furnace port cap 5 equipped with a boat base 7 is removably mounted on a lower flange 4b formed on the lower end surface of the furnace port 4. The upper and lower end surfaces of the inner tube 12 are opened and the lower end surface is removably supported on a supporting part 4c formed along the inner circumference of the furnace port 4. Further, the outer tube 11 and the inner tube 12 is constructed from SiC.

公开(公告)号：JPH10275857A

公开(公告)日：1998-10-13

申请号：JP7812597

申请日：1997-03-28

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a contact by which a constant forming of contact is possible with ensuring a large process margin, even for a semiconductor device requiring miniaturization. SOLUTION: Impurity density in polycrystalline silicon, forming a mask (an etching mask layer 6 and side walls 7) is set lower than the impurity density of polycrystalline silicon forming a plug 8a in a contact hole 5a. In this way, etching rate of the plug 8a becomes lower than the etching rate of the mask. Even of a sufficient overetching is carried out until the etching mask layer 6 and the sidewalls 7 on an interlayer insulating film 5 are completely removed, the plug 8a in the contact hole 5a does not withdraw to the back of the peripheral region (interlayer insulating film 5). Accordingly, an ideal contact shape can be obtained, without controlling with high precision the etching amount. The process margin becomes large in the contact-forming process as a result.

公开(公告)号：JPH10270079A

公开(公告)日：1998-10-09

申请号：JP7614097

申请日：1997-03-27

Applicant: SONY CORP

Inventor： ADACHI MOMOE ,  FUJITA SHIGERU

IPC: H01M10/05 ,  H01M10/052 ,  H01M10/0568 ,  H01M10/40

Abstract: PROBLEM TO BE SOLVED: To provide a nonaqueous electrolyte battery with an excellent shelf life and cycle property. SOLUTION: This nonaqueous electrolyte battery has a negative electrode 1 formed of lithium, lithium alloy or a material capable of doping/dedoping lithium, a positive electrode 2 and nonaqueous electrolytic solution formed with electrolyte dissolved in nonaqueous solvent. The electrolyte contains at least one of LiN(C2 F5 SO2 )2 and LiN(C4 F9 SO2 )(CF3 SO2 ) and at least one of LiPF6 , LiBF4 , LiClO4 and LiAsF6 .

公开(公告)号：JPH1050684A

公开(公告)日：1998-02-20

申请号：JP20140396

申请日：1996-07-31

Applicant: SONY CORP ,  KOKUSAI ELECTRIC CO LTD

Inventor： FUJITA SHIGERU ,  FURUNO MAKOTO ,  ITAYA HIDEJI

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/31 ,  H01L21/683 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device manufacture method which prevents foreign substances from being generated on a wafer. SOLUTION: The semiconductor device manufacturing method comprises mounting wafers W in stages of wafer mounts 2 in a single wafer type low- pressure CVD apparatus having a heat treating chamber 1, and forming films on the wafers being heated. The mounts 2 are stacked one above the other in the treating chamber 1. When the wafers W are inserted in the treating chamber 1, previously heated up to desired treating temp., the wafers are not immediately mounted on the stages of the mounts, except the lowermost mount, but left in this chamber until the wafer center temp. rises near the internal temp. in the treating chamber 1. Then they are mounted on specified stages of the mounts to form films.

公开(公告)号：JPH09134919A

公开(公告)日：1997-05-20

申请号：JP28985095

申请日：1995-11-08

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L21/318

Abstract: PROBLEM TO BE SOLVED: To form a nitride film stably and with good reproducibility so as to facilitate the film control, by taking the film growth process on two stages of growing a silicon nitride film initially under first condition, and subsequently, forming a film under second condition different from it. SOLUTION: In a device using ONO gate structure such as a flash memory, etc., a lower electrode is made, and then a base silicon oxide film to constitute an ONO film is made. The formation of a silicon nitride film is performed by decompressed CVD method. That is, the formation of a nucleus can be performed without depending upon the condition of the surface of a silicon oxide film, by growing a film, setting the pressure higher that that under optimum pressure conditions on a CVD device. Hereby, incubation time can be fixed regardless of the surface condition of the silicon oxide film. Subsequently, film growth is performed under the pressure condition in normal film growth process, thus this is excellent in film controllability since the film growth rate is not so high and besides the base has a nucleus.

公开(公告)号：JPH09120838A

公开(公告)日：1997-05-06

申请号：JP27800495

申请日：1995-10-25

Applicant: SONY CORP

Inventor： NARUSE YOSHIAKI ,  FUJITA SHIGERU ,  KOMARU TOKUO

IPC: H01M10/05 ,  C01B31/02 ,  C01B31/04 ,  H01M4/131 ,  H01M4/133 ,  H01M4/587 ,  H01M10/0569 ,  H01M10/40 ,  H01M4/02 ,  H01M4/58

Abstract: PROBLEM TO BE SOLVED: To provide a nonaqeuous electrolyte secondary battery having a high energy density, and excellent cycle characteristics. SOLUTION: A battery is provided with a negative electrode comprising carbon material capable of doping and dedoping lithium, a positive electrode 2, and nonaqueous electrolyte in which electrolyte is dissolved in nonaqueous solvent. For the nonaqueous solvent, ethylene carbonate and propylene carbonate are both used. A total rate of ethylene carbonate and propylene carbonate is 30-50 volume %, and propylene carbonate is set to be 4 volume % or more and less than 10 volume %. As the negative electrode 1, carbon material (graphite) of a face (002) spacing of 0.340nm or less, and as the positive electrode 2, composite oxide including lithium and more than one sort of transition metal is used.

公开(公告)号：JPH08181121A

公开(公告)日：1996-07-12

申请号：JP32510994

申请日：1994-12-27

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE: To inhibit the unnecessary spreading of a connection hole, such as a contact hole, by a method wherein an etching-resisting mask having an aperture at a part other than a contact part is formed on a silicate glass film, the silicate glass film is etched using this mask as a mask and after that, the silicate glass film is etched by selective etching. CONSTITUTION: An etching-resisting mask 10 having an aperture at a part other than a contact part to a diffused layer 5 is formed on a silicate glass film 6. The film 6 being exposed on the aperture is etched by anisotropic etching until a silicon nitride film 3 is exposed. A silicon oxide film 7 is formed and a flattening of the entire surface is conducted. The exposing film 6 is etched by selective etching. The film 3 located at the contact part is etched to make the layer 5 expose. An electrode wiring 8, which makes contact with the exposed layer 5, is formed.

公开(公告)号：JPH07245344A

公开(公告)日：1995-09-19

申请号：JP3513794

申请日：1994-03-07

Applicant: SONY CORP

Inventor： FUJITA SHIGERU

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To provide a forming method of a polysilicon plug wiring preventing the formation of a PN junction in an upper layer polysilicon wiring. CONSTITUTION:An interlayer insulating film 13, an N-type polysilicon film 14, an interlayer insulating film 15, a P-type polysilicon film 16, and an interlayer insulating film 17 are sequentially laminated on lower layer wirings 11, 12, and a contact hole 19 is opened. BF2 is implanted in the exposed surface of the P-type polysilicon film 16 by using slant ion implantation, and a high concentration layer 16A is formed only in the vicinity of the contact hole 19. After that, a polysilicon plug 20 is buried and made an N-type polysilicon plug by implanting phosphorus (P). Since the high concentration layer 16A is formed on the P-type polysilicon film 16, it can be prevented that N-type impurities diffuse from the polysilicon plug 20 and a PN junction is formed. Thereby the deterioration of characteristics of a device can be prevented when the device is formed on the P-type polysilicon film 16.

公开(公告)号：JPH0714607A

公开(公告)日：1995-01-17

申请号：JP6356794

申请日：1994-03-31

Applicant: SONY CORP ,  MITSUI PETROCHEMICAL IND

Inventor： KOMARU TOKUO ,  FUJITA SHIGERU ,  YOKOYAMA KEIICHI ,  HIBARA AKIO

IPC: C01B31/02 ,  C01B31/04 ,  H01M4/485 ,  H01M4/587 ,  H01M10/05 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/40 ,  H01M4/02 ,  H01M4/58

Abstract: PURPOSE:To maintain charge/discharge reaction by using a mixture of methylethyl carbonate and dimethyl carbonate as a low viscosity solvent of an electrolyte in a nonaqueous electrolyte secondary battery using a carbon material capable of doping/undoping lithium in an negative electrode and a lithium transition composite oxide in a positive electrode. CONSTITUTION:A mixture of methylethyl carbonate and dimetyl carbonate is used as a low viscosity solvent of an electrolyte so as to obtain normal charge/discharge reaction in overcharging and even after leaving under high temperature in a charged state. When the total volume of a nonaqueous solvent is represented by T, the volume of methylethyl carbonate by M, and the volume of dimethyl carbonate by D, a mixing ratio of methylethyl carbonate and dimethyl carbonate to the total volume is specified to 2/10