公开(公告)号：JPS58182143A

公开(公告)日：1983-10-25

申请号：JP6600082

申请日：1982-04-20

Applicant: Sony Corp

Inventor： ISHIDA MINORU

IPC: G02B7/09 ,  G11B7/08 ,  G11B7/09

CPC classification number: G11B7/08

Abstract: PURPOSE:To suppress the temperature dependency of damping characteristics, by supporting an optical system with leaf springs between which a polymer compound having the damping characteristics is sandwiched. CONSTITUTION:The plate members 14 and 15 are made of, for example, 20mum stainless steel and 10mum beryllium copper, and the polymer compound layer 16 uses, for example, acrylic alkyl ester flexible resin and is, for example, 50mum thick. The polymer compound layer 16 is stuck not over the entire areas of the plate members 14 and 15, but partly. Thus, the temperature dependency of the damping characteristics is reduced.

Abstract translation: 目的：为了抑制阻尼特性的温度依赖性，通过支撑具有夹在其间具有阻尼特性的高分子化合物的板簧的光学系统。 构成：板构件14,15由例如20μm不锈钢和10m铍铜制成，高分子化合物层16例如使用丙烯酸烷基酯类柔软树脂，例如为50μm厚。 高分子化合物层16不被卡在板件14和15的整个区域上，而是部分地粘着。 因此，衰减特性的温度依赖性降低。

公开(公告)号：JPS5891540A

公开(公告)日：1983-05-31

申请号：JP18962081

申请日：1981-11-26

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H04R23/00 ,  G05D3/12 ,  G11B7/09

Abstract: PURPOSE:To obtain a titled pickup which generates no resonance, has widened a servo-band, and generates no vibrating sound, by forming a bobbin which is provided with an objective lens and is driven electromagnetically, by ceramics. CONSTITUTION:Light of a laser light beam, etc. is irradiated to a disk by an objective lens 2 through a photoconductive hole (b), and its reflected ray is photodetected by a photoelectric converting element through the objective lens. A bobbin 1 is formed by ceramics, and focus adjustment and tracking adjustment can be executed by driving said bobbin in the axial core direction and the right- angle direction to both plate springs 9. Since ceramics have large strength, the thickness of a side wall part of the bobbin 1 can be thinned, and the magnetic permeability in an air-gap part of a magnetic circuit can be raised. Accordingly, it is possible to raise following-up properties of the objective lens at the time of focus adjustment and at the time of tracking adjustment.

公开(公告)号：JP2014230051A

公开(公告)日：2014-12-08

申请号：JP2013107622

申请日：2013-05-22

Applicant: ソニー株式会社 ,  Sony Corp

Inventor： ISHIDA MINORU

IPC: H04N5/225 ,  H04N5/91

CPC classification number: H04N5/23238 ,  G06T5/006 ,  G06T2207/20221 ,  H04N5/2252 ,  H04N5/2258 ,  H04N5/23219 ,  H04N5/23222 ,  H04N5/23235 ,  H04N5/23293

Abstract: 【課題】情報処理装置の電子基板上において、筐体の長辺方向に長い合成画像を生成する複数の撮像部以外の電子部品を配置し易くする。【解決手段】情報処理装置は、第1光学系と、第2光学系と、筐体とを具備する。第1光学系は、第1撮像素子に光を入射させる。また、第2光学系は、第2撮像素子に光を入射させる。また、筐体は、特定方向に長い一の面を備え、その一の面において第1光学系および第2光学系が特定方向と略直交する直交方向に並べて配置される。また、第1光学系の光軸および第2光学系の光軸が特定方向においてある角をなすように、第1光学系および第2光学系が配置される。【選択図】図1

Abstract translation: 要解决的问题：为了在信息处理器的电子板上容易地布置除了多个用于在壳体的较长边缘方向产生复合图像的成像单元之外的电子部件。解决方案：信息处理设备包括第一光学系统， 第二光学系统和外壳。 第一光学系统使光进入第一成像装置。 第二光学系统使光进入第二成像装置。 壳体包括沿特定方向长的一个表面，并且在一个表面上，第一光学系统和第二光学系统在与特定方向几乎正交的方向上并排布置。 第一光学系统和第二光学系统被布置成使得第一光学系统的光轴和第二光学系统的光轴在特定方向上形成一定角度。

公开(公告)号：JP2008103979A

公开(公告)日：2008-05-01

申请号：JP2006284704

申请日：2006-10-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUI YASUHIRO ,  NAKAJIMA HIROTOMO ,  ISHIDA MINORU

IPC: H04N5/208 ,  G06T5/20 ,  H04N1/409 ,  H04N5/232 ,  H04N101/00

Abstract: PROBLEM TO BE SOLVED: To provide an image processing apparatus and image processing method which can adaptively perform contour correction for an arbitrary luminance and can perform sufficient contour enhancement for a desired portion of image data, and also to provide a camera system.
SOLUTION: The image processing apparatus 200 includes: a contour correcting portion 210 for correcting a contour signal of an input digital image signal; a non-linear luminance generating portion 220 for performing gamma correction on a digital image signal to generate a luminance signal; and a contour correction adding portion 230 for adding a final contour image signal S210 output from the contour correcting portion 210 to the non-linear luminance signal S220 generated by the non-linear luminance generating portion 220. The contour correcting portion 210 includes a gain generating portion 213 which is inputted with the luminance signal of digital image and generates a contour correction gain according to the luminance, and has a function to perform luminance modulation correction on the contour signal using the generated gain.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种图像处理装置和图像处理方法，其可以对任意亮度进行自适应地进行轮廓校正，并且可以对图像数据的期望部分执行足够的轮廓增强，并且还提供相机系统。 解决方案：图像处理装置200包括：轮廓校正部分210，用于校正输入数字图像信号的轮廓信号; 用于对数字图像信号执行伽马校正以产生亮度信号的非线性亮度产生部分220; 以及用于将从轮廓校正部分210输出的最终轮廓图像信号S210与由非线性亮度生成部分220生成的非线性亮度信号S220相加的轮廓校正添加部分230.轮廓校正部分210包括增益生成 部分213输入数字图像的亮度信号，并根据亮度生成轮廓校正增益，并且具有使用所生成的增益对轮廓信号进行亮度调制校正的功能。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005229015A

公开(公告)日：2005-08-25

申请号：JP2004037861

申请日：2004-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ISHIDA MINORU ,  ARAYA KATSUHISA ,  KOCHIYAMA AKIRA ,  TSUSHIMA TOMOHITO

IPC: H01L27/10

Abstract: PROBLEM TO BE SOLVED: To provide a storage device which can hold written data stably and can carry out writing of data or the like by a small current. SOLUTION: An electrode-to-electrode substance layer 13 is held between an electrode 11 and an electrode 12. A transfer barrier layer 14 of electron or the like having a pin hole 14A is formed in an interface between the electrode and the substance layer 13. When a writing voltage is applied, an active species is ionized and eluted from the electrode 11 side containing redox active species and moves to the electrode 12 direction. Thereafter, it receives electron from the electrode 12 side and is deposited on receiving electron from the electrode 12 side, and a conduction path 16 is formed between the electrode 11 and the electrode 12. The conduction path 16 is formed in a narrow region corresponding to the pin hole 14A, and the density of the redox active species deposited in an inside becomes higher when compared to a conventional structure wherein the transfer barrier layer 14 of electron or the like does not exist, thus keeping almost a fixed resistance value regardless of the passage of time after writing. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种可以稳定地保存写入数据并且可以通过小电流执行数据等的写入的存储装置。 电极对电极物质层13保持在电极11和电极12之间。具有针孔14A的电子等的转移阻挡层14形成在电极和电极12之间的界面中。 当施加写入电压时，活性物质从含有氧化还原活性物质的电极11侧离子化和洗脱，并移动到电极12的方向。 此后，它从电极12侧接收电子，并从电极12侧接收电子沉积，并且在电极11和电极12之间形成导电路径16.导电路径16形成在与 与不存在电子等的转印阻挡层14的常规结构相比，沉积在内部的氧化还原活性物质的密度和针孔14A的密度变高，因此几乎保持固定的电阻值，而不管 写作后的时间流逝。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004288843A

公开(公告)日：2004-10-14

申请号：JP2003078447

申请日：2003-03-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ARAYA KATSUHISA ,  KOCHIYAMA AKIRA ,  ISHIDA MINORU

IPC: H01L27/10 ,  H01L27/105 ,  H01L45/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor memory element and a semiconductor memory device using the same, which record and read information easily, and are manufactured easily by a relatively simple manufacturing method. SOLUTION: The semiconductor memory element 10 comprises a first electrode 2, a second electrode 5, and an amorphous thin film 4 sandwiched between both electrodes. At least either of the electrodes 2, 5 contains Ag or Cu, and the amorphous thin film 4 is composed of Ge and one or more elements selected from S, Se, Te, and Sb. The semiconductor memory element 10 is provided with wires connected to the first/second electrodes 2, 5, and a plurality of wired semiconductor memory elements 10 are arranged to form the magnetic memory device. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体存储元件和使用该半导体存储元件的半导体存储器件，其容易记录和读取信息，并且通过相对简单的制造方法容易地制造。 解决方案：半导体存储元件10包括夹在两个电极之间的第一电极2，第二电极5和非晶薄膜4。 电极2,5中的至少任一个包含Ag或Cu，非晶薄膜4由Ge和选自S，Se，Te和Sb的一种或多种元素组成。 半导体存储元件10设置有连接到第一/第二电极2,5的导线，并且布置多个有线半导体存储元件10以形成磁存储器件。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2000036543A

公开(公告)日：2000-02-02

申请号：JP20324098

申请日：1998-07-17

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L21/8244 ,  H01L27/11 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To achieve high integration so that the size of a memory cell can be reduced. SOLUTION: Each memory cell 10 has a p-type active region 13 and an n-type active region 14, two pieces of word lines 21a and 21b (WL1 and WL2), and a common gate line (GL1) and a common gate line 22b (GL2). The two memory cells 10 and 10' are arranged so that the cells are deviated by e.g. 1/2 to each other in the direction perpendicular to the direction of the word line from the perfectly opposing positions. Furthermore, these memory cells 10 and 10' are arranged so that the parts of the cells are overlapped in the direction of the word line. Thus, the size of the memory cell can be made small in the direction of the word line.

公开(公告)号：JP2000031298A

公开(公告)日：2000-01-28

申请号：JP17118698

申请日：1998-06-18

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L21/3205 ,  G11C11/412 ,  H01L21/8238 ,  H01L21/8244 ,  H01L27/092 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To enable effective prevention of deterioration of charge holding characteristics caused by a pattern shift at the time of forming a gate, and also enable reduction of a source voltage due to a wiring resistance and reduction of a cell area. SOLUTION: A first active region in which first transistors (drive transistor and word transistor) are to be formed and a second active region in which a second transistor (load transistor) is to be formed are arranged so channel current directions of the transistors are parallel to each other in the respective memory cells, and are also separated between adjacent cells in a direction perpendicular thereto. A power voltage supply line VCC is a groove wiring line of a 2-layer contact structure in which the power voltage is supplied to an impurity region. Further a bit-line connection wiring line 182 is also of a groove wiring type. One of the power voltage supply lines may be used commonly between the adjacent cells in a direction perpendicular to the wiring line direction, and memory node wiring layers 50a and 50b may be formed with different etching masks.

公开(公告)号：JPH08167257A

公开(公告)日：1996-06-25

申请号：JP33249294

申请日：1994-12-13

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: G11B21/02 ,  G11B7/085

Abstract: PURPOSE: To unnecessitate the guide shaft of a movable part which is provided in a conventional feeding mechanism, to reduce the number of components and also to make a whole device small in size and light in weight by using a yoke also for the guide shaft of movable part. CONSTITUTION: The feeding mechanism is provided with the fixedly arranged yoke 11, permanent magnet 12 mounted on this yoke, movable part supported so as capable of sliding in one direction of the yoke, and coil bobbin 13 mounted on this movable part and wound with the coil so as to surround the yokes 11a, 11b. In this case, the magnetic path constituted of the permanent magnet 12 and yokes 11a, 11b is passed through the area between the permanent magnet 12 and the yokes 11a, 11b. Consequently, the force facing toward one direction of the yoke is generated in the area of the coil 13b, then the movable part is moved in one direction of the yoke and guided along the yoke.

公开(公告)号：JPH06216151A

公开(公告)日：1994-08-05

申请号：JP2172093

申请日：1993-01-14

Applicant: SONY CORP

Inventor： ISHIDA MINORU

IPC: H01L21/205 ,  H01L21/31 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE:To provide a minute semiconductor device having the high reliability by reducing the diffusion of impurities, and enhancing the dielectric strength of a sidewall with respect to a conductor film. CONSTITUTION:The first sidewall comprising an SiO2 film 22 formed by high- temperature CVD is formed on the side surfaces of a polycide film 16 and an SiO2 film 17. The second sidewall comprising an SiO2 film 24 formed by low-temperature CVD is formed on the outer surface of the SiO2 film 22. Therefore, heat treatment to be applied is less and the diffusion of impurities 21 and 23, which are already introduced, is less in comparison with the case, wherein the entire sidewall is formed of the SiO2 film 22. The etching of the SiO2 film 22 having the excellent film quantity can be prevented with the SiO2 film 24.