公开(公告)号：JPH11150333A

公开(公告)日：1999-06-02

申请号：JP31410797

申请日：1997-11-14

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element of a structure, wherein the overflow of carriers from an active layer to optical waveguide layers can be inhibited and the element is constituted using a high-quality II-VI compound semiconductor material which is excellent in life characteristics. SOLUTION: An n-type Zn1-x Mgx Sy Se1-y clad layer 5, an n-type Sn1-u Mgu Sy Se1-v optical waveguide layer 6, an active layer 7 consisting of a Zn1-z Cdz Se layer, a p-type Zn1-u Mgu Sv Se1-v optical waveguide layer 8 and a p-type Zn1-x Mgx Sv Se1-v clad layer 9 are laminated in order on an n-type GaAs substrate 1 via buffer layers to form a laser structure. The compositions of the layers 6 and 8 are chosen so that the absolute value of a lattice mismatching Δa/a to the substrate 1 is 0.01 or lower, a difference between the band gaps of the layer 7 and the layer 6 and the gaps of the layer 7 and the layer 8 is 0.3 eV or higher and a difference between the refractive indexes between the layers 5 and 6 and between the layers 8 and 9 is 0.1 or higher. As one example, the (x), the (y), the (u), the (v) and the (z) are used on the conditions of x=0.25, y=0.28, u=0.11, v=0.16 and z=0.25.

公开(公告)号：JPH11150332A

公开(公告)日：1999-06-02

申请号：JP31410697

申请日：1997-11-14

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU

IPC: H01L33/06 ,  H01L33/28 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which is excellent in operation characteristics and life characteristics, can be highly reliable and is constituted using a II-VI chemical semiconductor material. SOLUTION: In a semiconductor laser of an SCH structure, wherein a ZnCdSe layer is used as an active layer, a ZnSSe layer is used as an optical waveguide layer, and a ZnMgSSe layer is used as a clad layer, a p-type ZnSSe cap layer 10, which has a part having a stripe form and has grooves 10a in both sides of the part, is provided on a p-type ZnMgSSe clad layer 9. The point parts of the grooves 10a reach to the depth in the middle in the thickness direction of the layer 9. A p-type ZnSe contact layer 11, a p-type ZnSe/ZnTEMQW layer 12 and a p-type ZnTe contact layer 13 are provided on the part having the stripe form of the layer 10. Insulating layers 14 are respectively provided on the parts, which are located under the parts of the grooves 10a, of the layer 9 and the parts adjacent to the outside parts of the grooves 10a, of the layer 10 and a current constricting structure is formed.