FORMING METHOD FOR SINGLE CRYSTAL THIN-FILM

    公开(公告)号:JPS62165908A

    公开(公告)日:1987-07-22

    申请号:JP744486

    申请日:1986-01-17

    Applicant: SONY CORP

    Abstract: PURPOSE:To form a single crystal thin-film by the continuous scanning of energy beams by a method wherein one part of a semiconductor layer is melted and recrystallized and changed into a single crystal and an adjacent semiconductor layer is melted and recrystallized, using the single crystal as a seed crystal. CONSTITUTION:An SiO2 film 2 is formed onto an Si substrate 1, a polycrystalline Si film 3 is applied on the film 2, and a cap layer 4 is shaped onto the film 3. Laser beams are scanned in the (a) direction to the sample 7. In this case, laser power is reduced up to a point close to the melting point of the Si film 3 and lamellae are generated in the film 3 in sections corresponding to scribing lines 8 in the substrate 1, and seed crystal sections 12 are shaped in the lamellae. Laser beams cross the lines 8, laser power is brought to a first level, the film 3 adjacent to the seed crystal sections 12 is melted and recrystallized, and single crystal growth sections 13 are formed. Laser beams are scanned in succession on the whole surface of a sample 7, thus obtaining Si single crystal thin-films extending over the whole surface of the sample 7.

    FORMING METHOD FOR SINGLE CRYSTAL THIN-FILM

    公开(公告)号:JPS62165907A

    公开(公告)日:1987-07-22

    申请号:JP744386

    申请日:1986-01-17

    Applicant: SONY CORP

    Abstract: PURPOSE:To grow a single crystal positively extending over the whole surface of a sample by a method wherein a region, from which a semiconductor layer is exposed, and a region coated with a cap layer are formed, the former is melted and recrystallized, a single crystal film with a (100) face is shaped, and the latter is melted and recrystallized, using the single crystal film as a species. CONSTITUTION:A first region 11 from which a semiconductor layer 3 is exposed and a second region 12 coated with a cap layer 4 are shaped onto an insulating substrate. Energy beams are made to scan in the direction of the arrow (a) and the first region 11 is melted and recrystallized, and a single crystal thin-film (a lamellar seed crystal) with a (100) face is formed. Energy beams are made to scan in the direction of the arrow (b) crossing at right angles with the direction of the arrow (a), and the second region 12 is melted and recrystallized, employing the single crystal thin-film as a seed. Accordingly, the single crystal thin-films are shaped positively extending over the whole surface of a sample 10.

    MANUFACTURE OF SEMICONDUCTOR SINGLE CRYSTAL THIN FILM

    公开(公告)号:JPS61144815A

    公开(公告)日:1986-07-02

    申请号:JP26698884

    申请日:1984-12-18

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain a thin film of excellent crystallizability by a method wherein a polycrystalline Si layer is deposited on a quartz substrate, the Si layer is solidified by cooling and recrystallized after it is fused by scanning an energy beam, and when the Si layer is formed into a single crystal thin film, it is divided into square-shaped parts through the intermediary of a narrow-width coupling part, and they are coupled when solidified by cooling. CONSTITUTION:When a polycrystalline Si layer is deposited on a quartz sub strate, the Si layer is formed into square-shaped insular regions 11, 110, 112, 21 and 22 separated by strip-formed regions 21 and 22 and narrow-width cou pling parts 120, 121, 122, 131, 132 and the like. Then, an energy beam is scanned from leading edges A-A' to B-B' direction, and the processings to be performed on the strip-formed regions 21 and 22 are mentioned as follows. If the region 112 is in a fused state, the parts 212, and 222 adjoining to the region 112, among the regions 21 and 22, and the coupling parts 122 and 132 are also turned into a fused state, they are moved as the beam makes progress, and a plurality of insular regions can be coupled successively.

    Manufacture of thin film of semiconductor single crystal
    44.
    发明专利
    Manufacture of thin film of semiconductor single crystal 失效
    半导体单晶薄膜的制造

    公开(公告)号:JPS6144788A

    公开(公告)日:1986-03-04

    申请号:JP16692684

    申请日:1984-08-09

    Applicant: Sony Corp

    Abstract: PURPOSE: To obtain the titled thin film having excellent crystallinity and same crystal plane direction, by forming plural pairs of linear notches to a specific semiconductor layer, scanning the notches with a heating means along the widening direction of the notches, and cooling and solidifying the molten semiconductor layer.
    CONSTITUTION: A polycrystalline semiconductor layer 2 made of silicon is applied to an insulation substrate 1 made of quartz by vacuum chemical deposition. Plural pairs of linear notches 4A, 4B are formed to the semiconductor layer 2. The notches of each pair make an angle with each other, and are placed symmetrically forming a definite gap between the ends, and the corresponding notches of the pairs are placed parallel to each other. A cap layer 3 made of SiO
    2 and/or Si
    3 N
    4 , etc. is formed on the notched semiconductor layer. A linear heating means having a width L is transferred along the direction of the arrow from the bottom upward to melt the semiconductor layer 2, which is cooled spontaneously to effect the growth of the crystal along the direction of the arrow 6 preventing the formation of a large number of crystal growth nuclei. The titled thin film having excellent crystallinity and having the same crystal plane direction is formed in the region shown by the dotted line 10.
    COPYRIGHT: (C)1986,JPO&Japio

    Abstract translation: 目的:为了获得具有优异的结晶度和相同的晶面方向的标题薄膜,通过在特定的半导体层上形成多对线状凹口,沿着凹口的加宽方向用加热装置扫描凹口,并冷却和固化 熔融半导体层。 构成:通过真空化学沉积将由硅制成的多晶半导体层2施加到由石英制成的绝缘基板1。 多对线状凹口4A,4B形成于半导体层2上。每对的凹口彼此成一个角度,并且对称地放置在端部之间形成确定的间隙,并且对的相应凹口平行放置 对彼此。 在缺口半导体层上形成由SiO 2和/或Si 3 N 4等构成的覆盖层3。 具有宽度L的线性加热装置从底部向上沿着箭头方向传送以熔化半导体层2,半导体层2自发地冷却以使晶体沿着箭头6的方向生长,从而防止形成 大量晶体生长核。 在虚线10所示的区域中形成具有优异结晶度并且具有相同晶面方向的标题薄膜。

    LIQUID CRYSTAL DISPLAY
    45.
    发明专利

    公开(公告)号:JPS5887535A

    公开(公告)日:1983-05-25

    申请号:JP18633481

    申请日:1981-11-20

    Applicant: SONY CORP

    Abstract: PURPOSE:To make latent heat and quenching unnecessary, and to increase a write speed, by executing the transfer from smetic C phase to A phase, by applying voltage being below a switching threshold level, and irradiating the light. CONSTITUTION:HOBACPC which becomes chiral smetic C phase by leading an optical active center into smetic C phase is pinch-held between horizontal orientation layers 3a, 3b obtained by spincoating PVA on transparent electrodes 2a, 2b. Because of orientation control force on the glass wall surface and thin cell thickness, a liquid crystal molecule is equivalent in enery, and the direction of dipole moment of the molecule takes 2 stable horizontal orientation states of the reverse direction. When laser light is irradiated, smetic. A phase is obtained, and when it is cooled and returned to smethic C* phase, either an array A or B can be selected by a weak electric field applied in the thickness direction of the cell. Its array difference can be read out by use of polarization.

    Filter for display, and display
    46.
    发明专利

    公开(公告)号:JP2004004261A

    公开(公告)日:2004-01-08

    申请号:JP2002159291

    申请日:2002-05-31

    Abstract: PROBLEM TO BE SOLVED: To provide a filter for a display particularly suitable for use in the display screen of the display in which unnecessary electromagnetic interference (EMI) is suppressed and to provide the display.
    SOLUTION: A filter 16a for the display is mounted on the display screen of the display and has a major dispersion layer 32a formed by dispersing first particles substantially absorbing visible light and absorbing the unnecessary electromagnetic interference, and second particles substantially transmitting the visible light and substantially blocking unnecessary electromagnetic interference. The first particles comprise ferrite particles and/or metallic magnetic substance particles having visible light absorbing surface-coating and having a particle size of 5 μm or smaller, (preferably, 50 nm to 5 μm). The second particles comprise transparent conductive material particles having a particle size of 5 μm or smaller (preferably 5 nm to 5 μm). A lattice pattern 36 containing the highly concentrated first particles is formed in the major dispersion layer 32.
    COPYRIGHT: (C)2004,JPO

    Plasma display device and its manufacturing method
    47.
    发明专利
    Plasma display device and its manufacturing method 审中-公开
    等离子体显示装置及其制造方法

    公开(公告)号:JP2003338247A

    公开(公告)日:2003-11-28

    申请号:JP2002146392

    申请日:2002-05-21

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma display device and its manufacturing method wherein reduction of the drive voltage and prolongation of life-time of the device is possible. SOLUTION: Because a pair of maintenance electrodes 12X, 12Y is arranged on two slopes of a slated part 11A, the respective upper faces are installed having slopes that the discharge gap G side is low, and the outer side is high. In the discharge, a stronger electric field than that of a previous one is generated at the outer side region of the maintenance electrode 12, and at the whole upper face side of the maintenance electrodes 12X, 12Y, a more even discharge becomes to be made. COPYRIGHT: (C)2004,JPO

    Abstract translation: 解决的问题:提供等离子体显示装置及其制造方法,其中可以降低驱动电压并延长装置的使用寿命。 解决方案:由于一对维护电极12X,12Y布置在板状部分11A的两个斜面上,所以各个上表面安装有具有放电间隙G侧较低且外侧高的斜面。 在放电中,在维护电极12的外侧区域产生比前一个更强的电场,并且在维护电极12X,12Y的整个上表面侧,产生更均匀的放电 。 版权所有(C)2004,JPO

    Plasma display device and driving circuit therefor, and driving method
    48.
    发明专利
    Plasma display device and driving circuit therefor, and driving method 审中-公开
    等离子体显示装置及其驱动电路及驱动方法

    公开(公告)号:JP2003302928A

    公开(公告)日:2003-10-24

    申请号:JP2002110092

    申请日:2002-04-12

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma display device and a driving circuit therefor, a capable of high-luminance and high-gradation display even if pixels are increased in number, and to provide a driving method therefor. SOLUTION: A data driver applies a data pulse Pd and a charge holding pulse Ph to address electrodes superimposing the two kinds of voltage signals. The data pulse Pd is a driving voltage for initiating discharge across the address electrodes and scanning electrodes, and the pulse width is narrower than conventional, for example, 1 μsec or less. The voltage value Vd is set so that the summation with the scanning pulse is higher than a discharge initiating voltage. The charge holding pulse Ph is a driving voltage for holding an electric field so as to sustain the discharge initiated by the application of the data pulse until the particulates charged in the pixel area are increased to a predetermined value. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题:为了提供等离子体显示装置及其驱动电路,即使像素数量增加,也能够进行高亮度和高分级显示,并提供其驱动方法。 解决方案:数据驱动器将数据脉冲Pd和电荷保持脉冲Ph施加到叠加两种电压信号的寻址电极。 数据脉冲Pd是用于开始在寻址电极和扫描电极上的放电的驱动电压,并且脉冲宽度比常规的窄,例如1μsec或更小。 电压值Vd被设定为使得与扫描脉冲的相加高于放电起始电压。 电荷保持脉冲Ph是用于保持电场的驱动电压,以便维持通过施加数据脉冲而发起的放电,直到充电在像素区域中的微粒增加到预定值。 版权所有(C)2004,JPO

    METHOD FOR DRIVING PLASMA DISPLAY DEVICE
    49.
    发明专利

    公开(公告)号:JP2003208123A

    公开(公告)日:2003-07-25

    申请号:JP2002008738

    申请日:2002-01-17

    Applicant: SONY CORP

    Inventor: KOJIMA SHIGERU

    Abstract: PROBLEM TO BE SOLVED: To provide a method for driving a plasma display device capable of improving display quality. SOLUTION: From directly after the end of reset discharge, a positive adjusting pulse 51 is applied to a scanning electrode 17Y. The electrons gathering on the side of the scanning electrode 17Y on a protective layer surface are made to be stored as wall electric charges by the electric field formed by the adjusting pulse 51, and neutralization with the positive charge particles such as Xe is suppressed. Moreover, the positive charge particles remaining in the discharge space are also converged on the side of a sustaining electrode 17X on the protective layer surface. Thus, a predetermined quantity of wall charges are stably formed in the normal area in the whole pixel area. COPYRIGHT: (C)2003,JPO

    PLASMA DISPLAY DEVICE
    50.
    发明专利

    公开(公告)号:JP2003151442A

    公开(公告)日:2003-05-23

    申请号:JP2001345550

    申请日:2001-11-12

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma display device capable of enhancing image quality on a display screen and reducing noise and radiant noise caused by discharge, by preventing a discharge gas particle in a charged condition which serves as a priming particle from driving into an adjacent picture element, and by dissolving a tailing phenomenon and a flickering phenomenon on the display screen. SOLUTION: This plasma display device has a plurality of pairs of discharge maintaining electrodes 12 formed on the inside of a first base 11, and a barrier rib 24 formed on the inside of a second base 21 to form a sealed discharge space 4 between the first base 11 and the second base 21, and each pair of discharge electrodes 12 forms an electric field for plasma display so as to turn it toward a direction perpendicular to the wall surface of the barrier rib 24.

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