公开(公告)号：JP2004163472A

公开(公告)日：2004-06-10

申请号：JP2002326056

申请日：2002-11-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  NIIKURA CHIE

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for designing a photomask by which OPC can be easily carried out and the time required for designing can be decreased while the accuracy of the OPC is maintained, and to provide a photomask produced by the above method and a semiconductor device manufactured by using the photomask. SOLUTION: In a model base OPC, the result of measuring the line width of a test pattern is compared with the calculation result of the model to judge whether or not the fitting residual falls within the tolerance of error (-a, +a). When the residual exceeds the tolerance, the influences of the fitting residual on characteristics such as the connection relation of the pattern with upper and lower layers and the connection are analyzed to determine practically necessary tolerance (-b, +c), wherein each of a, b, c is a constant. If the measurement point shows the fitting difference exceeding the range of (-a, +a) but within the range of (-b, +c), the fitting accuracy is regarded sufficiently high, and inspection of the model is completed. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于设计可以容易地执行OPC的光掩模的方法，并且可以在维持OPC的精度的同时降低设计所需的时间，并提供由 以及使用光掩模制造的半导体器件。

解决方案：在模型库OPC中，将测试图形的线宽测量结果与模型的计算结果进行比较，以判断拟合残差是否落在误差公差（-a， 一个）。 当余量超过公差时，分析拟合残差对图案与上层和下层的连接关系以及连接之间的特性的影响，以确定实际上必需的公差（-b，+ c），其中 ，b，c是常数。 如果测量点显示的拟合差超过（-a，+ a）的范围，但在（-b，+ c）的范围内，则拟合精度被认为足够高，并且完成了模型的检查。 版权所有（C）2004，JPO

公开(公告)号：JP2003332201A

公开(公告)日：2003-11-21

申请号：JP2002134919

申请日：2002-05-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To materialize accurate exposure by controlling the angle of incidence of EUV light impinging on a reflection type mask in an exposure method and an exposure system of using light reflected from the reflection type mask while the reflection type mask is irradiated with the EUV light. SOLUTION: In the exposure method and the exposure system of irradiating a wafer 9 with the EUV light reflected from the reflection-type mask 4 while the reflection type mask 4 is irradiated at a prescribed angle with the EUV light emitted from an EUV light source 1, a change in an angle of incidence of the EUV light impinging on the reflection-type mask 4 is detected, an angle of incidence of the EUV light impinging on the reflection-type mask 4 is corrected on the basis of the detected change of the angle of incidence to carry out an exposure operation. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：通过在曝光方法中控制入射在反射型掩模上的EUV光的入射角和使用从反射型掩模反射的光的曝光系统来实现准确的曝光，而反射型掩模为 用EUV光照射。 解决方案：在曝光方法和曝光系统中，以反射型掩模4反射的EUV光照射晶片9，同时以与EUV发射的EUV光以规定角度照射反射型掩模4 光源1，检测入射在反射型掩模4上的EUV光的入射角的变化，基于检测到的方式校正入射在反射型掩模4上的EUV光的入射角 改变入射角进行曝光操作。 版权所有（C）2004，JPO

公开(公告)号：JP2015019143A

公开(公告)日：2015-01-29

申请号：JP2013143566

申请日：2013-07-09

Applicant: ソニー株式会社 ,  Sony Corp

Inventor： IWASAKI MASANORI ,  OZAWA KEN ,  MATSUZAWA NOBUYUKI ,  YASUHARA DAISUKE ,  KIMURA NOZOMI

IPC: H04N5/225 ,  G03B11/00 ,  H01L27/14 ,  H04N5/335

CPC classification number: H04N5/3572 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L2224/45144 ,  H01L2224/48463 ,  H04N5/2173 ,  H04N5/2253 ,  H04N5/2254 ,  H01L2924/00

Abstract: 【課題】フレアやゴーストといったノイズの発生を低減しつつ、光学フィルタを十分に機能させる。【解決手段】撮像レンズ100を透過する光線を撮像素子102上に結像する撮像装置において、撮像素子102上に設けられ、光線を透過させる積層物101と、積層物101を、その上面端部が、撮像素子102の有効画素領域の外端部の画素に入射する光線からなる光線束の最も外側の光線を透過できる光学必要幅H以上の位置に設ける。本技術は、受信装置に適用することができる。【選択図】図2

Abstract translation: 要解决的问题：使滤光器完全起作用，同时减少诸如耀斑和鬼影的噪声的产生。解决方案：用于将透过成像透镜100的光束聚焦在成像元件102上的成像装置包括层压体101 其形成在成像元件102上并透射光束。 层叠体101的上表面端部位于比光束必须宽度H宽的位置，该宽度允许光束通量中的最外侧的光束包括入射光束 位于成像元件102的有效像素区域中的位于外端的像素通过其传输。 成像装置适用于接收装置。

公开(公告)号：JP2013092393A

公开(公告)日：2013-05-16

申请号：JP2011233003

申请日：2011-10-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  MATSUZAWA NOBUYUKI ,  MAEDA KENSAKU ,  MORIYA YUSUKE

IPC: G01N33/53 ,  C12M1/34 ,  C12Q1/68 ,  G01N21/64 ,  G01N33/543

CPC classification number: G01N33/52 ,  C12Q1/6825 ,  G01N21/6428 ,  G01N21/6454 ,  G01N33/54373 ,  G01N2021/6439 ,  G01N2458/00 ,  C12Q2563/107

Abstract: PROBLEM TO BE SOLVED: To provide a chemical sensor, a biomolecule detection device, and a biomolecule detection method that enable biomolecules to be detected with high precision.SOLUTION: A chemical sensor of the present invention comprises a substrate, an optical layer, and an intermediate layer. The substrate has a plurality of photodiodes formed thereon and arranged in a flat shape. The optical layer is laminated on the substrate, and waveguides for guiding incident light to each of the photodiodes are formed in the optical layer. The intermediate layer is laminated on the optical layer, and a probe retaining region capable of retaining a probe material is formed for each waveguide in the intermediate layer.

Abstract translation: 要解决的问题：提供能够以高精度检测生物分子的化学传感器，生物分子检测装置和生物分子检测方法。 解决方案：本发明的化学传感器包括基板，光学层和中间层。 基板具有形成在其上的多个光电二极管并且被布置成平坦的形状。 光学层层叠在基板上，并且在光学层中形成用于引导入射到每个光电二极管的波导的波导。 中间层被层叠在光学层上，并且在中间层中为每个波导形成能够保持探针材料的探针保持区域。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013085215A

公开(公告)日：2013-05-09

申请号：JP2012039687

申请日：2012-02-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MOGI HIDEAKI ,  OZAWA KEN ,  HIGASHITSUTSUMI YOSHIHITO ,  IWAMA JUN

IPC: H04N9/07 ,  G02B5/20 ,  G02B5/28 ,  H04N5/225

CPC classification number: H04N5/332 ,  G02B5/208 ,  H01L27/14621 ,  H04N5/2254 ,  H04N9/045

Abstract: PROBLEM TO BE SOLVED: To provide an image pickup apparatus that enables detection of infrared light or ultraviolet light and visible light in the same manner.SOLUTION: An image pickup apparatus 1A comprises a lens system 20, and an image pickup unit 10 on which light having passed through the lens system 20 is incident. The image pickup unit 10 has a plurality of first image pickup elements 11 which receive light in a first wavelength band, and a plurality of second image pickup elements 12 which receive light in a second wavelength band different from the first wavelength band. The lens system 20 or the image pickup unit 10 comprises an optical element 30A which causes light in the first wavelength band having a light quantity smaller than the light quantity of light in the second wavelength band to reach the image pickup unit.

Abstract translation: 要解决的问题：提供能够以相同的方式检测红外光或紫外光和可见光的图像拾取装置。 解决方案：图像拾取装置1A包括透镜系统20和其上穿过透镜系统20的光入射的图像拾取单元10。 图像拾取单元10具有接收第一波长带中的光的多个第一图像拾取元件11和接收与第一波长带不同的第二波长带的光的多个第二图像拾取元件12。 透镜系统20或图像拾取单元10包括光学元件30A，其使第一波长带中的光具有小于第二波长带中的光的光量的光量到达图像拾取单元。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012054856A

公开(公告)日：2012-03-15

申请号：JP2010197484

申请日：2010-09-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO SHUZO ,  OTANI EIJI ,  OZAWA KEN ,  KOBAYASHI SEIJI

IPC: H04N13/02 ,  G02B5/30 ,  G03B35/08 ,  G03B35/26 ,  H04N5/225 ,  H04N5/369 ,  H04N9/07

CPC classification number: G02B5/3058 ,  G03B35/08 ,  G03B35/26 ,  H04N13/0217 ,  H04N13/0257

Abstract: PROBLEM TO BE SOLVED: To provide an imaging method capable of suppressing occurrence of binocular rivalry and preventing significant deterioration of the amount of light reaching an imaging element.SOLUTION: An imaging method using an imaging device comprises an optical system and an imaging element array for converting light passing through the optical system to electric signals. When a pixel group composed of unit pixel rows selected for every two or more rows is set to a first pixel group PG, imaging elements composing the first pixel group are set to a first imaging element group 41, and a pixel group composed of a second imaging element group 42 composed of imaging elements not included in the first imaging element group 41 is set to a second pixel group PG, parallax information for obtaining a stereoscopic image is acquired in the first imaging element group 41, image information for obtaining an image is acquired in the second imaging element group 42, image information is acquired at pixels where the parallax information in the first imaging element group 41 is acquired based on the acquired image information, and thereafter the stereoscopic image is obtained from the parallax information and the image information at all pixels.

Abstract translation: 要解决的问题：提供一种能够抑制双目对抗的发生并防止到达成像元件的光量的显着劣化的成像方法。 解决方案：使用成像装置的成像方法包括光学系统和用于将通过光学系统的光转换成电信号的成像元件阵列。 当为每两行或更多行选择的由单位像素行组成的像素组被设置为第一像素组PG 1 时，将构成第一像素组的成像元件设置为第一像素组 成像元件组41和由不包括在第一成像元件组41中的成像元件组成的第二成像元件组42的像素组被设置为第二像素组PG 2 ，在第一摄像元件组41中取得用于获得立体图像的视差信息，在第二摄像元件组42中取得图像获取图像信息，在第一成像元件组中的视差信息的像素处获取图像信息 基于所获取的图像信息获取组41，然后从所有像素的视差信息和图像信息获得立体图像。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2007103899A

公开(公告)日：2007-04-19

申请号：JP2006092240

申请日：2006-02-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  WATANABE YOKO ,  BOONTARIKA THUNNAKART ,  OZAWA KEN

IPC: H01L21/027

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/2041 ,  Y10S438/952

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection coating using an immersion lithography technology, capable of sufficiently reducing reflectivity at the interface between a resist layer and a silicon semiconductor substrate even if exposure light diagonally enters one layer. SOLUTION: A 2-layer structure antireflection coating is formed between a resist layer and a silicon oxide film formed on the surface of a silicon semiconductor substrate, and is used for exposing the resist layer by an exposure system whose numerical aperture is 0.93-1.2, with a wavelength of 190-195 nm. N 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy an equation ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1, when a specified set is selected as sets of value [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], with a complex index of the refraction N 1 , N 2 of an upper layer and a lower layer, constituting the antireflection coating, as N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i and film thickness of the upper layer and lower layer as d 1 , d 2 . COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供使用浸没式光刻技术的抗反射涂层，即使曝光光线对角地进入一层，也能够充分降低抗蚀剂层和硅半导体基板之间的界面处的反射率。 解决方案：在抗蚀剂层和形成在硅半导体衬底的表面上的氧化硅膜之间形成2层结构抗反射涂层，并且用于通过数值孔径为0.93的曝光系统曝光抗蚀剂层 -1.2，波长为190-195nm。 n 1 ，k 1 ，d 1 ，n 2 ，k 2 d 2 满足公式ä（n 1 -n 10 ）/（n 1m 10 ）} 2 + A（K 1 -k 10 ）/（K 1M - ķ 10 ）} 2 + A（D 1 -d 10 ）/（D 1M < / SB> -d 10 ）} 2 + A（N 2 -n 20 ）/（N < SB>2米 -n 20 ）} 2 + A（K 2 -k 20 ） /（K 2米 -k 20 ）} 2 + A（D 2 -d 20 < / SB>）/（d 2m -d 20 ≤1，当指定的集合被选择为值[n 10 ， 10 ，d 10 ， 20 ， 具有构成防反射涂层的上层和下层的折射率N 1 ，N 2 的复合指数的 20 作为N 1 = n 1 i，N 2 = n 2 1 ，d 2 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006216639A

公开(公告)日：2006-08-17

申请号：JP2005025978

申请日：2005-02-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for setting light intensity distribution by which the optimized intensity distribution of exposure light is set to demonstrate the maximum performance even at a through pitch. SOLUTION: The method for setting light intensity distribution is comprised of the steps to diffract lights emitted from an exposure light source that are supposed to be emitted from four point light sources located at the specified positions, by a pattern having Q kinds of specified pitches P q formed on an exposure mask, to obtain light intensity distribution by calculation when the images are formed, to calculate a value S q as an NILS value from the obtained light intensity distribution, to calculate a map of an average value S OPT of a sum of products of weight rates WT q and values S q set at the respective pitches P q , and to design the light source intensity distribution to the angle of lights which are emitted from the exposure light sources so that the map of the average value S OPT can be obtained and enter the exposure mask. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种设置光强度分布的方法，通过该方法，曝光光的优化强度分布被设定为即使在直通间距也显示最大性能。 解决方案：用于设置光强度分布的方法包括以下步骤：将假定从位于指定位置的四点光源发射的曝光光源发出的光衍射到具有Q种 形成在曝光掩模上的指定间距P q ，以便在形成图像时通过计算获得光强度分布，以从所获得的NILS值计算值S q 光强度分布，以计算重量率WT 和值S q 的乘积之和的平均值S OPT 的映射 并且将光源强度分布设计成从曝光光源发射的光的角度，使得平均值S OPT 可以获得并进入曝光掩模。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006156515A

公开(公告)日：2006-06-15

申请号：JP2004341602

申请日：2004-11-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: H01L27/14 ,  H01L31/0232

CPC classification number: H01L27/14685 ,  G02B3/0031 ,  G02B3/0037 ,  H01L27/14605 ,  H01L27/14627

Abstract: PROBLEM TO BE SOLVED: To obtain an on-chip lens that can be improved in reproducibility as compared with a heat reflowing system and is shading corrected easily and stably.
SOLUTION: An exposed and developed photoresist such as an ultraviolet ray-photosensitive resin etc., is directly formed in the surface of a lens after the photoresist is exposed to ultraviolet rays by using the so-called gray-tone mask. Consequently, individual lenses can be formed in lenses having free curved surfaces and the shapes of the lenses can be changed independently in accordance with the heights of images, as compared with the case where the conventional on-chip lens formed by heat reflowing method is inevitably formed in a four-quadrant symmetrical spherical-surface lens.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：与热回流系统相比，获得可再现性提高的片上透镜，并且容易且稳定地进行着色校正。 解决方案：通过使用所谓的灰色蒙版掩模，在光致抗蚀剂暴露于紫外线之后，在透镜的表面中直接形成曝光和显影的光致抗蚀剂如紫外线 - 感光树脂等。 因此，与通过热回流法形成的传统的片上透镜不可避免地相比，可以在具有自由曲面的透镜中形成各个透镜，并且可以根据图像的高度独立地改变透镜的形状 形成在四象限的对称球面透镜中。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006058773A

公开(公告)日：2006-03-02

申请号：JP2004242602

申请日：2004-08-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  INOUE KAZUHARU

IPC: G02B3/00

Abstract: PROBLEM TO BE SOLVED: To manufacture an optical component made of a hardenable optical element material, for example an optical lens whose both faces are spherical curved faces, finely and precisely compared to a conventional mechanically manufacturing method.
SOLUTION: A formation method for a hardenable optical element material and a manufacturing method for an optical component includes: a first main face formation step in which a hardened object 3a is obtained by hardening the hardenable optical component element material 3 after applying it to the surface of a formation substrate 2 having the inverted pattern of the first main face of the formed object to be obtained finally, that is, the optical component 1; and a second main face formation step in which the second main face of the formed object to be obtained finally is formed by etching. Prior to etching mentioned above, a registration 4 is applied to the surface of the hardened object 3a formed by hardening in the first main face formation step, and a shape for the registration 4 is selected.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：与传统的机械制造方法相比，制造由可硬化光学元件材料制成的光学部件，例如其两个面均为球形曲面的光学透镜。 解决方案：可硬化光学元件材料的形成方法和光学部件的制造方法包括：第一主面形成步骤，其中通过在施加之后硬化可硬化光学元件材料3而获得硬化物体3a 到具有最终要获得的成形物体的第一主面的倒置图案的形成衬底2的表面，即光学部件1; 以及第二主面形成步骤，其中最终得到的成形物体的第二主面通过蚀刻形成。 在上述蚀刻之前，通过在第一主面形成步骤中通过硬化形成的硬化物体3a的表面施加配准4，并且选择用于配准的形状4。 版权所有（C）2006，JPO＆NCIPI