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    SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN
    43.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN 有权

    公开(公告)号：US20210074720A1

    公开(公告)日：2021-03-11

    申请号：US16885499

    申请日：2020-05-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Younghwan Son ,  Sanghoon Jeong ,  Sangjun Hong ,  Seogoo Kang ,  Jeehoon Han

    IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

    Abstract: A semiconductor device includes a lower structure; a stack structure including gate layers and interlayer insulating layers and having an opening; a vertical structure in the opening; a contact structure on the vertical structure; and a conductive line on the contact structure. The vertical structure includes an insulating core region, a channel semiconductor layer covering side and lower surfaces of the insulating core region, data storage patterns between the channel semiconductor layer and the gate layers and spaced apart from each other, a first dielectric layer, and a second dielectric layer. At least a portion of the first dielectric layer is between the data storage patterns and the gate layers, at least a portion of the second dielectric layer is between the data storage patterns and the channel semiconductor layer, and the insulating core region includes first convex portions having increased widths in regions facing the gate layers.

    Three-dimensional semiconductor device
    44.
    发明授权
    Three-dimensional semiconductor device 有权

    公开(公告)号：US10396088B2

    公开(公告)日：2019-08-27

    申请号：US15696276

    申请日：2017-09-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sohyeon Lee ,  Sunil Shim ,  Jaeduk Lee ,  Jaehoon Jang ,  Jeehoon Han

    IPC: H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/52 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

    Abstract: A three-dimensional semiconductor device and a method of manufacturing the same are provided. The three-dimensional semiconductor device includes a stack structure including insulating layers and electrodes that are alternately stacked on a substrate, a horizontal semiconductor pattern between the substrate and the stack structure, vertical semiconductor patterns penetrating the stack structure and connected to the horizontal semiconductor pattern; and a common source plug at a side of the stack structure. The stack structure, the horizontal semiconductor pattern and the common source plug extend in a first direction. The horizontal semiconductor pattern includes a first sidewall extending in the first direction. The first sidewall has protrusions protruding toward the common source plug.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    45.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20250126789A1

    公开(公告)日：2025-04-17

    申请号：US18661135

    申请日：2024-05-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minsoo Shin ,  Joongshik Shin ,  Hyeongjin Kim ,  Jeehoon Han

    IPC: H10B43/27 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

    Abstract: A three-dimensional semiconductor memory device includes a plurality of peripheral circuit structures on a substrate, a plurality of stacked structures, each the plurality of stacked structures including a plurality of gate electrodes stacked on the plurality of peripheral circuit structure in a first direction perpendicular to a lower surface of the substrate, and the plurality of stacked structure being spaced apart from each other in a second direction parallel to the lower surface of the substrate, a separation structure extending between the plurality of stacked structures in a third direction intersecting the first direction and the second direction, the separation structure including a plurality of support patterns that are spaced apart from each other in the third direction in the separation structure; and an internal insulating layer surrounding a side surface of each of the plurality of support patterns.

    SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
    46.
    发明申请
    SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME 有权

    公开(公告)号：US20250107098A1

    公开(公告)日：2025-03-27

    申请号：US18807157

    申请日：2024-08-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kohji Kanamori ,  Jae-Bok Baek ,  Donghyuck Jang ,  Jeehoon Han

    IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

    Abstract: Disclosed are semiconductor devices and electronic systems. The semiconductor device comprises a semiconductor substrate including first and second cell array regions and a connection region including a lower pad region and an upper pad region, a peripheral circuit structure including peripheral circuits on the semiconductor substrate, and a cell array structure on the peripheral circuit structure and including a first stack structure including first conductive patterns stacked on the peripheral circuit structure and a second stack structure including second conductive patterns stacked on the first stack structure. The first stack structure includes a connection portion that has a uniform thickness on the upper pad region, and first and second stepwise structures that are asymmetric with each other on the lower pad region. The second stack structure includes third and fourth stepwise structures that are symmetric with each other on the connection portion of the first stack structure.

    SEMICONDUCTOR DEVICES
    47.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20250056807A1

    公开(公告)日：2025-02-13

    申请号：US18790129

    申请日：2024-07-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Juseong Min ,  Jaebok Baek ,  Taekkyu Yoon ,  Jeehoon Han

    IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

    Abstract: A semiconductor device includes a substrate, active regions extending on the substrate in a first direction, the active regions spaced apart from each other in a second direction perpendicular to the first direction, and arranged in a third direction oblique to the first direction and second direction, and gate electrodes disposed on the active regions and including a first edge extending in the second direction, a second edge extending in the first direction, and a corner region defined by the first edge and the second edge, wherein the corner region includes a protrusion having a width narrowing in a direction away from a center of each of the gate electrodes in plan view.

    Semiconductor devices comprising crack preventing layers and data storage systems including the same
    49.
    发明授权
    Semiconductor devices comprising crack preventing layers and data storage systems including the same 有权

    公开(公告)号：US12185543B2

    公开(公告)日：2024-12-31

    申请号：US17742043

    申请日：2022-05-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sanghun Chun ,  Kwangyoung Jung ,  Youngji Noh ,  Junghwan Park ,  Jeehoon Han

    IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

    Abstract: A semiconductor device includes a substrate, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, channel structures penetrating the gate electrodes, extending in the first direction, and each including a channel layer, separation regions penetrating the gate electrodes, extending in the first direction and a second direction perpendicular to the first direction, and spaced apart from each other in a third direction perpendicular to the first direction and the second direction, and crack prevention layers disposed on at least a portion of the separation regions, wherein each of the separation regions includes a lower region and upper regions spaced apart from each other in the second direction on the lower region and protruding upwardly from the lower region, and wherein the crack prevention layers are in contact with upper surfaces of the upper regions.

    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    50.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20240422983A1

    公开(公告)日：2024-12-19

    申请号：US18404198

    申请日：2024-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kohji Kanamori ,  Seo-Goo Kang ,  Seunghyun Lee ,  Jeehoon Han

    IPC: H10B43/35 ,  H01L23/522 ,  H01L23/528 ,  H01L25/065 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B80/00

    Abstract: A semiconductor device and an electronic system are provided. The semiconductor device may include a substrate including a cell array region and a connection region, a stacked structure including conductive patterns stacked on the substrate, an inner supporter that extends into the stacked structure in the connection region, a contact plug that extends into a portion of the stacked structure and electrically connected to one of the conductive patterns and at least partially extends around the inner supporter in plan view, an insulating spacer between the contact plug and the stacked structure and at least partially extends around the contact plug, and outer supporters spaced apart from the contact plug in the connection region and extending into the stacked structure.

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