公开(公告)号：WO1995029491A1

公开(公告)日：1995-11-02

申请号：PCT/JP1994000712

申请日：1994-04-27

Applicant: TDK CORPORATION ,  YASUHARA, Katsushi ,  ITO, Takashi ,  TAKEDA, Osamu ,  INOUE, Shoji

Inventor： TDK CORPORATION

IPC: H01F01/34

CPC classification number: H01F1/344 ,  C01G49/009 ,  C01P2002/32 ,  C01P2002/52 ,  C01P2004/02 ,  C01P2004/61 ,  C01P2006/42 ,  C04B35/2658

Abstract: A ferrite which is reduced in power loss and has a large value of DELTA B (= Bm - Br) in the high-frequency range and a satisfactory mu a-B relationship, and a power source core made therefrom. The ferrite is composed of the chief component comprising 30-41 mole % of MnO, 6-16 mole % of ZnO and the balance consisting of Fe2O3 and the subsidiary component comprising 50-250 ppm of SiO2, 200-1,500 ppm of CaO, at most 4,000 ppm of SnO2, at most 3,000 ppm of TiO2 (provided the sum of SnO2 and TiO2 is at least 300 ppm), at most 500 (exclusive of 0) ppm of Nb2O5, and at most 400 (exclusive of 0) ppm of ZrO2.

Abstract translation: 在高频范围内降低功率损耗并且具有大的DELTA B（= Bm-Br）值的铁氧体和令人满意的mu a-B关系，以及由其制成的电源芯。 铁素体由主要组分组成，其主要组分包括30-41摩尔％的MnO，6-16摩尔％的ZnO，余量由Fe 2 O 3组成，辅助组分包含50-250ppm的SiO 2，200-1,500ppm的CaO， 最多4000ppm的SnO 2，最多3000ppm的TiO 2（提供的SnO 2和TiO 2的总和为至少300ppm），至多500（不包括0）ppm的Nb 2 O 5和至多400（不包括0）ppm的 氧化锆。

公开(公告)号：WO1995015556A1

公开(公告)日：1995-06-08

申请号：PCT/JP1994002014

申请日：1994-11-30

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  KUROSE, Shigeo ,  HONJO, Yoshihiro ,  SOMIYA, Akira

IPC: G11B05/84

CPC classification number: G11B5/735 ,  G11B5/84 ,  G11B5/842

Abstract: The first object of the present invention is to provide a magnetic recording medium which has fewer dropouts immediately after production, prevents dropouts from increasing with time, prevents the deterioration in electro-magnetic conversion properties, and has high-durability coating such as a magnetic layer. The second object of the present invention is to provide a magnetic recording medium which has high-durability back-coat layer and has high charge prevention effect by the back-coat layer in addition to the features of the first object. The third object of the present invention is to improve productivity and to reduce the cost of production when such a magnetic recording medium is produced. In a production method including a step of kneading a solid content and a binder solution, a step of suspending solid material in the kneaded product, and a step of adding a viscosity adjustment solution to the dispersion to obtain a coating material, wherein materials (binder solution, kneaded material, dispersion, viscosity adjustment agent, coating material) are filtered after each process step described above, and filtration means capable of removing 95 % of a predetermined range is used at each filtration step.

Abstract translation: 本发明的第一个目的是提供一种磁性记录介质，其在生产之后立即具有较少的压差，防止掉落随时间增加，防止电磁转换性能的劣化，并且具有高耐久性涂层如磁性层 。 本发明的第二个目的是提供一种具有高耐久性背涂层并且除了第一物体的特征之外还通过背涂层具有高电荷防止效果的磁记录介质。 本发明的第三个目的是提高生产率并降低制造这种磁记录介质时的生产成本。 在包括捏合固体含量和粘合剂溶液的步骤的制备方法中，将固体材料悬浮在捏合产物中的步骤和向分散体中加入粘度调节溶液以获得涂料的步骤，其中材料（粘合剂 溶液，捏合材料，分散体，粘度调节剂，涂料）在每个过程步骤后使用能够除去95％的预定范围的过滤装置。

公开(公告)号：WO1994022173A1

公开(公告)日：1994-09-29

申请号：PCT/JP1994000452

申请日：1994-03-22

Applicant: TDK CORPORATION ,  SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. ,  ARAI, Michio ,  INUSHIMA, Takashi ,  CODAMA, Mitsufumi ,  SUGIURA, Kazushi ,  TAKAYAMA, Ichiro ,  KOBORI, Isamu ,  YAMAUCHI, Yukio ,  SAKAMOTO, Naoya

Inventor： TDK CORPORATION ,  SEMICONDUCTOR ENERGY LABORATORY, CO., LTD.

IPC: H01L31/113

CPC classification number: H01L27/14643 ,  H01L21/84 ,  H01L27/1237 ,  H01L31/1133

Abstract: An active layer (3') consisting of non-single-crystal silicon is formed by a thin-film technology on a substrate (1) coated with an insulation layer (2), and a gate electrode layer (5') is partially disposed on the active layer (3') through a gate insulation layer (4'). An imaging device having a MOS structure can be obtained by introducing a P- or N-type impurity into the active layer (3'). A bias voltage is applied to the gate electrode in such a manner that forward current flows between source and drain. When input light is applied to the active layer between the source and the drain through the gate electrode or the substrate, an electric output corresponding to the input light is obtained from the source or the drain. MOS transistors are provided on the substrate (1) to form switching devices and shift registers, which are necessary for the operation of the imaging device. The active layer (3') can be obtained by crystallizing an amorphous silicon layer by laser annealing or high temperature annealing with hydrogenation, and a trap density less than 5x10 /cm is realized. The light response time of the imaging device is several hundreds of microseconds ( mu sec), that is, 10 times or higher than the response of a conventional photosensor using amorphous silicon.

Abstract translation: 由涂覆有绝缘层（2）的基板（1）上通过薄膜技术形成由非单晶硅组成的有源层（3'），并且部分地设置栅极电极层（5'） 在有源层（3'）上通过栅极绝缘层（4'）。 具有MOS结构的成像装置可以通过在活性层（3'）中引入P型或N型杂质来获得。 偏置电压以正向电流在源极和漏极之间流动的方式施加到栅电极。 当通过栅电极或衬底将输入光施加到源极和漏极之间的有源层时，从源极或漏极获得与输入光相对应的电输出。 MOS晶体管设置在基板（1）上，以形成开关装置和移位寄存器，这对成像装置的操作是必需的。 有源层（3'）可以通过使用氢化使激光退火或高温退火使非晶硅层结晶而获得，并且实现了小于5×10 11 / cm 2的阱密度。 成像装置的光响应时间是几百微秒（μsec），也就是比使用非晶硅的常规光电传感器的响应的10倍或更高。

公开(公告)号：WO1994022164A1

公开(公告)日：1994-09-29

申请号：PCT/JP1994000426

申请日：1994-03-17

Applicant: TDK CORPORATION ,  HAMADA, Munemitsu ,  FUKUDA, Masaru ,  TAGUCHI, Haruo ,  IWAYA, Shoichi ,  ABE, Hiroaki

Inventor： TDK CORPORATION

IPC: H01J61/067

CPC classification number: H01J61/067 ,  C04B35/465 ,  C04B35/486 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/09 ,  H01J61/24 ,  H01J61/70 ,  H01J61/72 ,  H01J61/78

Abstract: The electrode for a ceramic cathode fluorescent discharge ensures a high density of electron current, has a high resistance against heat shock, and is less damaged by sputtering. The diameter of a tube using this electrode can be small. The material for the electrode is prepared using 0.5 to 1.5 mol of a first component selected from BaO, CaO or SrO, 0.05 to 0.95 mol of a second component selected from ZrO2 or TiO2, and 0.025 to 0.475 mol of a third component selected from V2O5, Nb2O5, Ta2O5, Sc2O3, Y2O3, La2O3, Dy2O3, Ho2O3, or 0.05 to 0.95 mol of the same selected from HfO2, CrO3, MoO3, WO3. Also, the electrode is fabricated by granulating this material and putting the lump, granular, or porous material in a bottomed cylindrical semiconductor magnetic container, and then, burning and reducing it. The mercury dispenser of the ceramic cathode fluorescent discharge lamp using this electrode is arranged in series between the bottomed semiconductor magnetic cylinder and the lead out section of the lead wire.

Abstract translation: 用于陶瓷阴极荧光放电的电极确保高密度的电子电流，具有高的耐热冲击性，并且较少受溅射损坏。 使用该电极的管的直径可以很小。 使用0.5〜1.5mol选自BaO，CaO或SrO的第一成分，0.05〜0.95mol选自ZrO 2或TiO 2的第二成分和0.025〜0.475mol选自V 2 O 5的第3成分来制备电极材料 ，Nb 2 O 5，Ta 2 O 5，Sc 2 O 3，Y 2 O 3，La 2 O 3，Dy 2 O 3，Ho 2 O 3，或0.05〜0.95mol选自HfO 2，CrO 3，MoO 3，WO 3的相同。 此外，通过将该材料制粒并将块状，粒状或多孔材料放入有底的圆柱形半导体磁性容器中，然后燃烧和还原，制造电极。 使用该电极的陶瓷阴极荧光放电灯的水银分配器串联布置在有底半导体磁性圆筒和引线的引出部分之间。

公开(公告)号：WO1994009491A1

公开(公告)日：1994-04-28

申请号：PCT/JP1993001485

申请日：1993-10-15

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  KOHNO, Masahide ,  KURODA, Kazuhiro ,  ISHIKAWA, Yasushi ,  SASAKI, Hideki ,  TAKASUGI, Yasufumi ,  IKARASHI, Tsunehiko ,  INOUE, Osamu

IPC: G11B05/702

CPC classification number: G11B5/735 ,  G11B5/7022 ,  G11B5/7023 ,  G11B5/7026 ,  Y10S428/90 ,  Y10T428/31609 ,  Y10T428/31935

Abstract: A magnetic recording medium comprises a nonmagnetic base, on which are formed an electron-cured magnetic resin layer containing dispersed ferromagnetic powder and an electron-cured resin backcoating. The present invention uses an electron-curable vinyl chloride resin having sulfur-containing polar group in combination with an electron-curable urethane resin having a phosphorus-containing polar group. In this way, the dispersion of ferromagnetic powder, surface flatness and electromagnetic conversion characteristics can be improved. Further, an error rate can be reduced in high density digital recording. Further, storage property is excellent.

Abstract translation: 磁记录介质包括非磁性基底，在其上形成含有分散的铁磁性粉末和电子固化树脂背涂层的电子固化的磁性树脂层。 本发明使用具有含硫极性基团的电子可固化氯乙烯树脂与具有含磷极性基团的电子可固化聚氨酯树脂组合。 以这种方式，可以提高铁磁粉末的分散性，表面平坦度和电磁转换特性。 此外，在高密度数字记录中可以降低错误率。 此外，保存性优异。

公开(公告)号：WO1993002979A1

公开(公告)日：1993-02-18

申请号：PCT/JP1992001015

申请日：1992-08-07

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  KAWAMURA, Keizou ,  KOBAYASHI, Makoto

IPC: C03C08/14

CPC classification number: C03C8/14 ,  C03C4/16 ,  C03C8/20 ,  H01B3/085 ,  H05K1/0306

Abstract: A dielectric material for high frequencies, wherein a glass, an oxide aggregate having a dielectric constant whose temperature coefficient τε is positive, and an oxide aggregate having a dielectric constant whose temperature coefficient τε is negative are used, these are blended in a predetermined volumetric ratio, the temperature coefficient τε of high frequency dielectric material is about -12 ppm/°C. Thereby the temperature coefficient τf of the resonance frequency of the high-frequency resonator made of the dielectric material is about zero.

公开(公告)号：WO1993000689A1

公开(公告)日：1993-01-07

申请号：PCT/JP1992000811

申请日：1992-06-26

Applicant: TDK CORPORATION ,  FUMAKILLA LIMITED

Inventor： TDK CORPORATION ,  FUMAKILLA LIMITED ,  TAKEUCHI, Michikazu ,  MIURA, Akira ,  SATOH, Takeyoshi ,  NOHARA, Hiroshi

IPC: H01C07/02

CPC classification number: H05B3/14 ,  A01M1/2077 ,  H01C1/084 ,  H01C7/02

Abstract: A thermister (2) of a positive characteristics is so disposed in a recessed section that one of the two principal faces facing each other faces a bottom section (11) of a case (1) and the other faces an opening face (12) opposed to the bottom section (11). A heat radiation member (5) has flat thermally-coupling sections (52) and a heat radiation cylindrical body (51) which is provided at least on one of the sides of the case (1), i.e. on the bottom section (11) side and the opening face (12) side and which is in surface contact with the side. Thereby, the efficiency of thermal conduction from the thermister (2) of a positive characteristic to the heat radiation cylindrical bodys (51) is improved.

Abstract translation: 具有正特性的热敏电阻器（2）设置在两个主面中彼此面对的壳体（1）的底部（11）的凹部中，另一个面向相对的开口面（12） 到底部（11）。 散热构件（5）具有平坦的热耦合部分（52）和设置在壳体（1）的至少一个侧面上即即底部部分（11）上的散热筒体（51） 侧面和开口面（12）侧，并且与侧面表面接触。 因此，提高了从正特性的热敏电阻（2）到散热筒体（51）的热传导效率。

公开(公告)号：WO1992014616A1

公开(公告)日：1992-09-03

申请号：PCT/JP1992000152

申请日：1992-02-17

Applicant: TDK CORPORATION

Inventor： TDK CORPORATION ,  TOMINAGA, Junji

IPC: B41M05/34

CPC classification number: G11B7/24 ,  G11B7/243 ,  G11B7/2534 ,  G11B7/2542 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595 ,  G11B2007/24304 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715 ,  Y10S430/146 ,  Y10T428/12569 ,  Y10T428/12611 ,  Y10T428/12806 ,  Y10T428/12896 ,  Y10T428/12917

Abstract: A substrate (2) coated with a recording layer (3) comprising shape memory alloy films (311, 312) and hydrogen storage alloy film (32), a dielectric film (4) and light reflecting film (5) which are layered in the abovesaid order. The hydrogen storage alloy film (32) emits hydrogen gas and reduces in volume on receiving light for recording, whereby voids (321) are formed within said film. Shape memory alloy films (311, 312) are deformed by gas pressure in the voids (321) and thus the thickness of the voids (321) increases. When erasing light is applied, shape memory alloy films (311, 312) attempt to restore to the initial shape thereof to apply pressure to hydrogen gas in the voids (321) and said gas is again occluded, and the voids (321) almost disappear. Emission and storage of hydrogen gas are reversible to permit re-writing of recorded information.

公开(公告)号：WO1984003852A1

公开(公告)日：1984-10-11

申请号：PCT/JP1983000095

申请日：1983-03-28

Applicant: TDK CORPORATION ,  SHIGETA, Masao ,  SHIBATA, Kazuhiko

Inventor： TDK CORPORATION

IPC: B22D11/06

CPC classification number: B22D11/005

Abstract: A method of producing a continuous thin metal strip of less than 20 mu m thick passes a nozzle (1) having a slit-like orifice (12) over the surface of a cooling roll or disc (3) rotating at a high speed to bring it into contact with a molten alloy. The shape and disposition of the nozzle is regulated as follows, thereby forming an adequate molten metal reservoir (2) and enabling the production stable thin metal strip: (a) the center line of the slit-like orifice in the nozzle is disposed vertically, (b) the angle formed between the center line of the orifice and the tangential direction of the surface of the rotating cooler is between approx. 2O to approx. 100 , (c) the width c of the slit is between approx. 0.2 to approx. 1 mm, (d) the width e of a second lip 12 is between approx. 3 to approx. 10 mm, (e) the width d d of a first lip c is more than approx. 3 mm, and (f) the distance a between the first lip and the surface of the cooler is at least approx. 1 mm, the distance b between the second lip and the surface of the cooler is approx. 0.1 mm to approx. 1 mm, and a > b.

Abstract translation: 制造小于20μm厚的连续薄金属条的方法将具有狭缝状孔口（12）的喷嘴（1）穿过在高速旋转的冷却辊或盘（3）的表面上，以使 它与熔融合金接触。 喷嘴的形状和配置如下进行调节，从而形成一个足够的熔融金属容器（2），并且能够生产稳定的薄金属条：（a）喷嘴中的狭缝状孔口的中心线垂直设置， （b）在孔的中心线与旋转冷却器的表面的切线方向之间形成的角度在大约 2O o至约 （c）狭缝的宽度c在约100℃之间。 0.2〜 （d）第二唇缘12的宽度e在约1毫米之间， 3到约 （e）第一唇缘c的宽度d d大于约 3 mm，（f）第一唇缘和冷却器表面之间的距离a至少约为 1 mm，第二个唇缘和冷却器表面之间的距离b约为 0.1毫米至约 1 mm，a> b。

公开(公告)号：WO1998030071A1

公开(公告)日：1998-07-09

申请号：PCT/JP1997004904

申请日：1997-12-26

Applicant: TDK CORPORATION ,  INOUE, Tetsushi ,  AOTANI, Junji ,  FUJITA, Tetsuji ,  ENDO, Hiroyuki

Inventor： TDK CORPORATION

IPC: H05B33/22

CPC classification number: H05B33/14 ,  C09K11/06 ,  C09K2211/1003 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/5012 ,  H01L2251/308 ,  H05B33/12 ,  Y10S428/917

Abstract: An organic electroluminescent (EL) element which comprises a photoelectronic functional material reduced especially in physical, photochemical, and electrochemical changes and an organic thin film which is formed by the vapor deposition of a compound highly compatible with a hole injection electrode and which efficiently emits lights of various colors with high reliability and is highly amorphous. It is inhibited during operation from undergoing a driving voltage increase or a luminance decrease, current leakage, or development or growth of a nonluminous part, is reduced in luminance decrease, is highly reliable with respect to heat resistance, etc., and has high luminance. The invention also provides a multilayered organic EL element which comprises a hole injection electrode and organic materials each having an optimal work function and which has high heat resistance, and an organic EL element which has high heat resistance, and an organic EL element which has a high hole mobility and is capable of attaining a higher current density. Each organic EL element has organic compound layers at least one of which comprises a compound having a skeleton represented by formula (I) wherein L0 represents two to four o-, p-, or m-phenylene groups, provided that when L0 is four phenylene rings, it may have optionally substituted aminophenyl at the center; and R01, R02, R03, and R04 each represents any of (a), (b) and (c), wherein R11, R12, R13, R14, R15, R16, and R17 represent each optionally substituted aryl; and r1, r2, r3, and r4 are each an integer of 0 to 5, provided that (r1+r2+r3+r4) is 1 or above.

Abstract translation: 一种有机电致发光（EL）元件，其特征在于减少光电子功能材料，特别是物理，光化学和电化学变化，以及通过气相沉积与空穴注入电极高度相容并有效发光的有机薄膜 各种颜色的高可靠性，高度无定形。 在运行中由于发生驱动电压增加或亮度降低，电流泄漏或非发光部件的显影或生长而被抑制的亮度降低，在耐热性等方面是高度可靠的，并且具有高亮度 。 本发明还提供一种多层有机EL元件，其包括空穴注入电极和各自具有最佳功函数并且具有高耐热性的有机材料和具有高耐热性的有机EL元件和有机EL元件，其具有 高空穴迁移率，能够获得更高的电流密度。 每个有机EL元件具有至少一种有机化合物层，其中至少一种包括具有由式（I）表示的骨架的化合物，其中L 0表示2-4个邻 - 对 - 或间 - 亚苯基，条件是当L0为四亚苯基 它可以在中心具有任选取代的氨基苯基; R 01，R 02，R 03和R 04各自表示（a），（b）和（c）中的任一个，其中R 11，R 12，R 13，R 14，R 15，R 16和R 17表示各自任选取代的芳基; 并且r1，r2，r3和r4各自为0〜5的整数，条件是（r1 + r2 + r3 + r4）为1以上。