公开(公告)号：JP2011201102A

公开(公告)日：2011-10-13

申请号：JP2010069572

申请日：2010-03-25

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: B29C59/02 ,  B29C33/10 ,  B29C33/26 ,  B29C33/38 ,  B29C43/36 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an imprint method capable of suitably transferring a portion surrounded by a projecting portion of an uneven pattern.SOLUTION: In the imprint method, since the uneven pattern of a mold is formed after an imprint mold is brought into contact with a material to be transferred, compared to the case when the mold having the uneven pattern previously formed is brought into contact with the material to be transferred, the frequency of defective transferring caused by interposing the air between the mold and the material to be transferred can be decreased and the portion surrounded by the projecting portion of the uneven pattern can be preferably transferred.

Abstract translation: 要解决的问题：提供能够适当地转移由不均匀图案的突出部分包围的部分的压印方法。解决方案：在压印方法中，由于在压印模具接触之后形成模具的不均匀图案 与具有预先形成的不均匀图案的模具与被转印材料接触的情况相比，与要转印的材料之间插入空气引起的不良转印频率相比， 可以优选地转印由凹凸图案的突出部包围的部分。

公开(公告)号：JP2011096816A

公开(公告)日：2011-05-12

申请号：JP2009248682

申请日：2009-10-29

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L21/027 ,  B29C33/42 ,  B81C99/00

Abstract: PROBLEM TO BE SOLVED: To provide an imprint mold capable of easily changing its uneven pattern.
SOLUTION: Since the imprint mold has an array of a plurality of pins which move up and down, a shape of an uneven pattern formed on the imprint mold can be easily changed by changing a projection amount of each pin. Consequently, the uneven pattern can be suitably changed in accordance with a desired three-dimensional pattern structure, thereby suppressing the number of imprint molds needed to form the desired three-dimensional pattern structure.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够容易地改变其不均匀图案的压印模具。 解决方案：由于压印模具具有上下移动的多个销的阵列，因此可以通过改变每个销的突出量来容易地改变形成在压印模具上的不均匀图案的形状。 因此，能够根据期望的三维图案结构适当地改变不均匀图案，从而抑制形成期望的三维图案结构所需的压印模具的数量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010080504A

公开(公告)日：2010-04-08

申请号：JP2008244204

申请日：2008-09-24

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L21/027 ,  G03F1/22 ,  G03F1/24 ,  G03F1/60 ,  G03F1/84

Abstract: PROBLEM TO BE SOLVED: To provide a reflection type photomask blank by which contrast between a pattern opened part and a pattern non-opened part of a reflection type photomask can be increased, and a pattern can be inspected easily, and to provide the reflection type photomask, and an inspection method and an inspection device of the same.
SOLUTION: The reflection type photomask blank includes a substrate, a reflection film formed on the substrate, a luminescent layer formed on the reflection film and emitting light when a voltage is applied, an absorber formed on the luminescent layer and absorbing exposure light.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以增加图案打开部分和反射型光掩模的图案未打开部分之间的对比度的反射型光掩模坯料，并且可以容易地检查图案，并且提供 反射型光掩模，以及检查方法和检查装置。 解决方案：反射型光掩模坯料包括基板，形成在基板上的反射膜，形成在反射膜上的发光层，当施加电压时发光;形成在发光层上并吸收曝光光的吸收体 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009218459A

公开(公告)日：2009-09-24

申请号：JP2008062093

申请日：2008-03-12

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L21/027 ,  G03F1/22 ,  G03F1/24

Abstract: PROBLEM TO BE SOLVED: To provide: a reflective mask blank having a substrate, a multilayered reflective film reflecting exposure light, and an absorber absorbing the exposure light, and improved in contrast for inspection light by reducing the film thickness of the absorber and preventing degradation of resolution of a pattern peripheral part in exposure; and a reflective mask.
SOLUTION: In this reflective mask blank, the absorber is composed of a first absorber 205 and a second absorber 204, and has a structure where the first absorber 205 is stacked on the second absorber 204 to be set on the exposure light side; the value of an extinction coefficient to the exposure light possessed by the first absorber 205 is larger than or equal to that possessed by the second absorber 204; the value of an extinction coefficient, possessed by the first absorber 205, to the inspection light having a wavelength larger than that of the exposure light is smaller than that possessed by the second absorber 204. This reflective mask is also provided.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供：具有基板，反射曝光光的多层反射膜和吸收曝光光的吸收体的反射掩模坯料，通过减小吸收体的膜厚度来提高检查光的对比度 并防止曝光中图案周边部分的分辨率降低; 和反光罩。 解决方案：在该反射掩模坯料中，吸收体由第一吸收体205和第二吸收体204构成，并且具有将第一吸收体205层叠在第二吸收体204上以将其设定在曝光侧的结构 ; 与第一吸收器205具有的曝光光的消光系数的值大于或等于第二吸收器204所具有的值; 由第一吸收器205拥有的具有比曝光光的波长大的波长的检查光的消光系数的值小于第二吸收器204所具有的消光系数。该反射掩模也被提供。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008171991A

公开(公告)日：2008-07-24

申请号：JP2007003296

申请日：2007-01-11

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/417 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To etch source/drain electrode layers without damaging an active layer due to over etching, or the like including the scraping of the active layer in patterning by one etching in a state where the electrodes are in contact with the active layer.
SOLUTION: A material having resistance against alkali is adopted for the active layer, a material having properties dissolved to alkali is adopted for the source/drain electrodes, and etching is made by alkali etchant when patterning the source/drain electrodes, thus patterning the source/drain electrodes on an upper layer by etching without damaging the lower-layer active layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了蚀刻源极/漏极电极层而不会由于过蚀刻而损坏有源层，包括在电极与电极接触的状态下通过一次蚀刻在图案化中刮除活性层 活动层。 解决方案：对于有源层采用具有抗碱性的材料，对源/漏电极采用具有溶解于碱的性质的材料，并且在图案化源/漏电极时通过碱蚀刻剂进行蚀刻，因此 通过蚀刻在上层上图案化源极/漏极，而不会损坏下层有源层。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008072011A

公开(公告)日：2008-03-27

申请号：JP2006250704

申请日：2006-09-15

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ISHIZAKI MAMORU ,  KON MASATO ,  ITO MANABU

IPC: H01L29/786 ,  H01L21/28 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor which can prevent erasure of a channel even if an etching method is used without using a lift-off method.
SOLUTION: The method of manufacturing the thin-film transistor includes at least a first step of forming a gate electrode pattern on an insulating substrate, a second step of forming a gate insulating film on the gate electrode pattern, a third step of forming an oxide semiconductor film pattern on the gate insulating film, and a fourth step of forming a source electrode and a drain electrode on the gate insulating film. In the manufacturing method, the fourth step of forming the source and drain electrodes on the gate insulating film is a step of forming the source and drain electrodes by etching using an etchant having (electrode film thickness÷electrode etching rate) is smaller than (film thickness of oxide semiconductor film pattern÷etching rate of oxide semiconductor film pattern) after forming the electrode layer.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种即使在不使用剥离方法的情况下使用蚀刻方法的情况下也可以防止擦除沟道的薄膜晶体管的制造方法。 解决方案：制造薄膜晶体管的方法至少包括在绝缘基板上形成栅电极图案的第一步骤，在栅电极图案上形成栅极绝缘膜的第二步骤，第三步骤 在所述栅极绝缘膜上形成氧化物半导体膜图案，以及在所述栅极绝缘膜上形成源电极和漏极的第四工序。 在制造方法中，在栅极绝缘膜上形成源极和漏极的第四步骤是通过使用具有（电极膜厚度÷电极蚀刻速率）小于（膜）的蚀刻剂的蚀刻来形成源极和漏极的步骤 形成电极层后氧化物半导体膜图案的厚度÷氧化物半导体膜图案的蚀刻速率。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007299913A

公开(公告)日：2007-11-15

申请号：JP2006126320

申请日：2006-04-28

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ISHIZAKI MAMORU ,  ITO MANABU ,  KON MASATO ,  KINO OSAMU ,  MATSUBARA RYOHEI

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor which is excellent in stability, is high in mobility and suitable for a pixel portion and a drive portion of a flexible display. SOLUTION: In a thin film transistor device, wherein a gate electrode is included on an insulating substrate, a drain electrode and a source electrode are arranged on a gate insulating film formed on these, and an oxide semiconductor pattern is arranged so that it may include a gap between the source electrode and the drain electrode, a sealing layer is included on the oxide semiconductor pattern. The sealing layer is an inorganic insulating film, for example it is oxidized silicon nitride or fluorinated resin. Moreover, the sealing layer is not included at least on a pixel electrode. Furthermore, an interlayer dielectric having an opening at a pixel electrode portion is included on the sealing layer, and an upper pixel electrode connected with the pixel electrode at the opening is included on the interlayer dielectric. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供稳定性优异的移动性高的薄膜晶体管，适用于柔性显示器的像素部分和驱动部分。 解决方案：在绝缘基板上包括栅电极的薄膜晶体管器件中，在其上形成的栅极绝缘膜上设置漏电极和源电极，并且设置氧化物半导体图案，使得 它可以包括源电极和漏电极之间的间隙，氧化物半导体图案上包含密封层。 密封层是无机绝缘膜，例如是氧化氮化硅或氟化树脂。 此外，密封层至少不包括在像素电极上。 此外，在密封层上包含具有像素电极部分开口的层间电介质，并且在层间电介质中包含与开口处的像素电极连接的上部像素电极。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007298627A

公开(公告)日：2007-11-15

申请号：JP2006125195

申请日：2006-04-28

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ITO MANABU ,  SEKINE NORIMASA ,  ISHIZAKI MAMORU ,  KINO OSAMU ,  MATSUBARA RYOHEI ,  KON MASATO

IPC: G09F9/30 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/167 ,  H01L29/786 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To provide a display device and a manufacturing method of the display device which facilitates the positioning of substrates formed of a color filter and a semiconductor circuit. SOLUTION: A second substrate formed of a transparent semiconductor circuit is located between a reflection type display element and a first substrate formed of a color filter layer. The use of the transparent semiconductor circuit assures the visualization, makes the disposition of the semiconductor circuit between the color filter and a reflection type display element possible and facilitates the positioning of the color filter and the semiconductor circuit. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供一种便于由滤色器和半导体电路形成的基板的定位的显示装置的显示装置和制造方法。 解决方案：由透明半导体电路形成的第二衬底位于反射型显示元件和由滤色器层形成的第一衬底之间。 透明半导体电路的使用确保可视化，使得可以在滤色器和反射型显示元件之间布置半导体电路，并且有利于滤色器和半导体电路的定位。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007123702A

公开(公告)日：2007-05-17

申请号：JP2005316405

申请日：2005-10-31

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L29/786 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a stable thin-film transistor and a manufacturing method thereof by preventing oxygen deficiency of an oxide semiconductor in which oxygen deficiency easily occurs, thereby improving the flexibility in transistor design.
SOLUTION: A laminate is used as an active layer, the laminate in which an oxide semiconductor A used as a substrate and consisting of any one kind of ZnO, SnO2, In2O3 and Zn2SnO4; and an intermediate oxide layer material B having a thickness not more than a film thickness causing a tunnel effect and having oxygen atoms are laminated. Thus, the problem is solved.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供稳定的薄膜晶体管及其制造方法，通过防止容易发生缺氧的氧化物半导体的氧缺陷，从而提高晶体管的设计灵活性。 解决方案：层压体用作活性层，其中氧化物半导体A用作基底并由任何一种ZnO，SnO 2，In 2 O 3和Zn 2 SnO 4组成的层压体; 并且层叠厚度不大于导致隧道效应且具有氧原子的膜厚度的中间氧化物层材料B. 因此，问题得到解决。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007123700A

公开(公告)日：2007-05-17

申请号：JP2005316403

申请日：2005-10-31

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L21/336 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To pattern each of layers without using a lift-off process, and to provide a thin-film transistor to be manufactured using such a process.
SOLUTION: In the thin-film transistor in which an InGaZnO4 thin film is used as an active layer and an ITO thin film is used as source-drain electrodes, this method has a process of patterning the ITO thin film provided on a substrate by etching, wherein the InGaZnO4 thin film provided on the patterned ITO thin film is patterned by etching. In this case, the two kinds of thin films are etched so that the etching is performed at different etching times while using etching liquids or etching gases of the same kind and same density, or while changing the density and not changing the other conditions.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：在不使用剥离工艺的情况下对各层进行图案化，并提供使用这种工艺制造的薄膜晶体管。 解决方案：在其中使用InGaZnO4薄膜作为有源层并且使用ITO薄膜作为源极 - 漏极的薄膜晶体管中，该方法具有将设置在其上的ITO薄膜图案化的工艺 衬底，其中通过蚀刻对设置在图案化的ITO薄膜上的InGaZnO 4薄膜进行图案化。 在这种情况下，蚀刻两种薄膜，使得在使用相同种类和相同密度的蚀刻液体或蚀刻气体的同时，或者在改变密度而不改变其它条件的同时，以不同的蚀刻时间进行蚀刻。 版权所有（C）2007，JPO＆INPIT