公开(公告)号：US20150136759A1

公开(公告)日：2015-05-21

申请号：US14541010

申请日：2014-11-13

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Sumi TANAKA

IPC: H05B6/70 ,  H01L21/67 ,  H05B6/64

CPC classification number: H01L21/67115 ,  H05B6/6411 ,  H05B6/70 ,  H05B6/701 ,  H05B6/705 ,  H05B6/806

Abstract: A microwave heating apparatus includes a processing chamber configured to accommodate a substrate; a substrate holding unit configured to hold and rotate the substrate in the processing chamber; a microwave generating source configured to generate a microwave; and a plurality of microwave inlet ports formed at a surface of the processing chamber which faces the substrate in the processing chamber, each of the microwave inlet ports having an opening area that gradually becomes wider toward the substrate. The microwave generated by the microwave generating source is irradiated to the substrate in the processing chamber through the microwave inlet ports to heat the substrate.

Abstract translation: 微波加热装置包括：配置成容纳基板的处理室; 衬底保持单元，被配置为在所述处理室中保持和旋转所述衬底; 构造成产生微波的微波发生源; 以及多个微波入口，形成在处理室的与处理室中的基板相对的表面处，每个微波入口具有朝向基板逐渐变宽的开口面积。 由微波发生源生成的微波通过微波入口照射到处理室中的基板，以加热基板。

公开(公告)号：US20250104974A1

公开(公告)日：2025-03-27

申请号：US18974589

申请日：2024-12-09

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32 ,  C23C16/455

Abstract: A plasma processing apparatus comprises a processing chamber, a waveguide, an electrode, an electromagnetic wave emission part and a multipactor discharge part. A plasma generation space is formed in the processing chamber. Electromagnetic waves for generating plasma are applied to the electrode. The waveguide is disposed along an outer circumference of the electrode. The electromagnetic wave emission part is made of a dielectric material and configured to emit the electromagnetic waves into the plasma generation space. The multipactor discharge part is a gap formed between the electrode and the electromagnetic wave emission part and faces the plasma generation space.

公开(公告)号：US20250095954A1

公开(公告)日：2025-03-20

申请号：US18967559

申请日：2024-12-03

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroyuki MIYASHITA ,  Yuki OSADA

IPC: H01J37/24 ,  H01J37/32

Abstract: Provided is a high-frequency power supply comprising: a power generator configured to generate a high-frequency power having a variable frequency; an output part configured to output the high-frequency power; a sensor configured to specify a reflection coefficient of the high-frequency power for a load connected to the output part; and a controller configured to determine a matching frequency of the high-frequency power for the load, wherein the controller is configured to: (i) obtain three reflection coefficients corresponding to a first frequency, a second frequency, and a third frequency from the sensor; (ii) determine, as the matching frequency, a frequency of a minimum point of a quadratic function that expresses the relationship between the first to third frequencies and the three reflection coefficients; and (iii) control the power generator to generate the high-frequency power having the matching frequency.

公开(公告)号：US20240170260A1

公开(公告)日：2024-05-23

申请号：US18282775

申请日：2022-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Mitsutoshi ASHIDA ,  Eiki KAMATA

IPC: H01J37/32 ,  H01J37/16 ,  H01L21/3065

CPC classification number: H01J37/32229 ,  H01J37/16 ,  H01L21/3065

Abstract: There is provided a plasma processing apparatus comprising: a processing container configured such that a substrate is subjected to plasma processing; a dielectric top plate which is quadrangular and which is provided to close an upper opening of the processing container; and a conductor plate supporting the dielectric top plate and having four electromagnetic wave emitting ports for emitting electromagnetic waves to the dielectric top plate. Each of the four electromagnetic wave emitting ports has a rectangular shape having long side and short side, the electromagnetic wave emitting ports are arranged such that the long side of each of the four electromagnetic wave emitting ports are parallel to the closest side among four sides of the dielectric top plate forming the quadrangular shape, and the long sides of the two electromagnetic wave emitting ports oriented in a same direction do not overlap each other in the same direction.

公开(公告)号：US20230386791A1

公开(公告)日：2023-11-30

申请号：US18249552

申请日：2021-10-15

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/44

CPC classification number: H01J37/32229 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/511 ,  C23C16/4405 ,  H01J2237/332

Abstract: Disclosed is a plasma processing apparatus including a chamber and a waveguide structure. The waveguide structure is configured to propagate electromagnetic waves, which are VHF waves or UHF waves, in order to generate plasma within the chamber. The waveguide structure includes a resonator for electromagnetic waves. The resonator includes a first waveguide, a second waveguide, and a load impedance portion. The first waveguide has a first characteristic impedance. The second waveguide has a second characteristic impedance. The second waveguide is terminated at a short-circuit end having a ground potential. The load impedance portion is connected between the first waveguide and the second waveguide. The second characteristic impedance is greater than the first characteristic impedance.

公开(公告)号：US20230343561A1

公开(公告)日：2023-10-26

申请号：US17766379

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Masashi IMANAKA ,  Eiki KAMATA ,  Taro IKEDA ,  Shigenori OZAKI ,  Soudai EMORI

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32238 ,  H01J2237/327

Abstract: There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

公开(公告)号：US20230295797A1

公开(公告)日：2023-09-21

申请号：US18042833

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Takayuki KOMIYA ,  Satoru KAWAKAMI ,  Taro IKEDA ,  Toshihiko IWAO

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52

CPC classification number: C23C16/345 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/509 ,  C23C16/52

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

公开(公告)号：US20230066120A1

公开(公告)日：2023-03-02

申请号：US17893621

申请日：2022-08-23

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Mikio SATO ,  Taro IKEDA ,  Mitsutoshi ASHIDA

IPC: H01J37/32

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

公开(公告)号：US20230054452A1

公开(公告)日：2023-02-23

申请号：US17891300

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI ,  Hiroyuki MIYASHITA

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.

公开(公告)号：US20220199369A1

公开(公告)日：2022-06-23

申请号：US17599912

申请日：2020-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Mikio SATO ,  Taro IKEDA ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.