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    ELECTROSTATICALLY DRIVEN DUAL VIBRATING BEAM FORCE TRANSDUCER
    41.
    发明申请
    ELECTROSTATICALLY DRIVEN DUAL VIBRATING BEAM FORCE TRANSDUCER 审中-公开
    静电驱动双振动梁传感器

    公开(公告)号：WO1990010205A1

    公开(公告)日：1990-09-07

    申请号：PCT/US1990000128

    申请日：1990-01-08

    Applicant: SUNDSTRAND DATA CONTROL, INC.

    Inventor： SUNDSTRAND DATA CONTROL, INC. ,  BLAKE, Graeme, A. ,  NORLING, Brian, L.

    IPC: G01L01/10

    CPC classification number: G01P15/097 ,  G01L1/10 ,  G01L1/183 ,  Y10S73/01

    Abstract: A dual vibrating beam force transducer having an electrostatic drive system. The transducer comprises a body (12) having first and second generally parallel beams (20, 22), coupled together at their ends. First and second electrodes (14, 16) are positioned adjacent to but not in contact with the respective beams. A drive circuit (18) causes an oscillating voltage to be applied to the electrodes. The beams are thus subjected to electrostatic forces that cause the beams to oscillate in a vibration plane containing both beams. The mechanical resonance of the beams controls the oscillation frequency, such that the frequency is a function of a force exerted along the beams. An embodiment is also described in which the drive means is coupled directly to one of the beams.

    SENSOR FOR MULTIFUNCTIONAL SENSING
    42.
    发明公开
    SENSOR FOR MULTIFUNCTIONAL SENSING 审中-公开

    公开(公告)号：US20240302228A1

    公开(公告)日：2024-09-12

    申请号：US18601468

    申请日：2024-03-11

    Applicant: CASE WESTERN RESERVE UNIVERSITY

    Inventor： Changyong Cao ,  Yaokun Pang

    IPC: G01L1/22 ,  G01L1/18

    CPC classification number: G01L1/2287 ,  G01L1/183

    Abstract: A textile-based sensor includes a textile triboelectric nanogenerator sensor attached to and overlying a textile piezoresistive sensor, wherein the textile triboelectric nanogenerator sensor is configured to generate an electrical signal indicative of object contact force and/or frequency with the textile triboelectric nanogenerator sensor, object material, and object surface morphology or texture, and the textile piezoresistive sensor is configured to generate an electric signal indicative of the applied external pressure to the sensor, wherein the textile triboelectric nanogenerator sensor overlies the textile piezoresistive sensing.

    Determination of resonant frequency and quality factor for a sensor system
    44.
    发明授权
    Determination of resonant frequency and quality factor for a sensor system 有权

    公开(公告)号：US11868540B2

    公开(公告)日：2024-01-09

    申请号：US17096598

    申请日：2020-11-12

    Applicant: Cirrus Logic International Semiconductor Ltd.

    Inventor： Ryan Hellman

    IPC: G06F3/02 ,  G01L1/14 ,  G01L1/00 ,  G01L1/18 ,  G01L1/16

    CPC classification number: G06F3/0202 ,  G01L1/005 ,  G01L1/14 ,  G01L1/162 ,  G01L1/183

    Abstract: A method for determining sensor parameters of an actively-driven sensor system may include obtaining as few as three samples of a measured physical quantity versus frequency for the actively-driven sensor system, performing a refinement operation to provide a refined version of the sensor parameters based on the as few as three samples and based on a linear model of an asymmetry between slopes of the measured physical quantity versus frequency between pairs of the as few as three samples, iteratively repeating the refinement operation until the difference between successive refined versions of the sensor parameters is below a defined threshold, and outputting the refined sensor parameters as updated sensor parameters for the actively-driven sensor system.

    DOUBLE-SIDE-COATED SURFACE STRESS SENSOR
    45.
    发明申请
    DOUBLE-SIDE-COATED SURFACE STRESS SENSOR 有权
    双面涂层表面应力传感器

    公开(公告)号：US20140352447A1

    公开(公告)日：2014-12-04

    申请号：US14371596

    申请日：2013-04-17

    Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

    Inventor： Genki Yoshikawa ,  Masakazu Aono ,  Tomonobu Nakayama ,  Frederic Loizeau ,  Terunobu Akiyama ,  Sebastian Gautsch ,  Peter Vettiger

    IPC: G01L1/18

    CPC classification number: G01L1/18 ,  G01L1/183 ,  G01N29/022 ,  G01N29/036 ,  G01N2291/0256 ,  G01N2291/02827

    Abstract: A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating the both surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

    Abstract translation: 双面涂布表面应力传感器包括传感膜结构部分，其中彼此相对的至少两个端部固定在安装部分上; 覆盖感测膜结构部分的两个表面的受体层; 以及检测应力的元件，其设置在感测膜结构部分的彼此相对的固定的两个端部中的至少一个附近，或彼此相对的固定的两个端部中的至少一个 部分，其中根据施加到涂覆在感测膜结构部分的两个表面上的受体层上的应力，从元件获得检测输出。 因此，可以提供通过受体层涂覆感测膜结构部分的两个表面的双面涂覆的表面应力传感器，从而获得足够大的检测输出。

    Vibrating beam force transducer
    47.
    发明申请
    Vibrating beam force transducer 有权
    振动梁力传感器

    公开(公告)号：US20070144269A1

    公开(公告)日：2007-06-28

    申请号：US11317384

    申请日：2005-12-22

    Applicant: Mitchell Novack

    Inventor： Mitchell Novack

    IPC: G01L1/22

    CPC classification number: G01L1/106 ,  G01L1/162 ,  G01L1/183

    Abstract: An apparatus and method for monolithic force transducers in which a sensed force is applied across only two ends of a pair of force sensing elements so that the pair of force sensing elements are loaded in series with one in compression and the other in tension, whereby the force sensed by each of the two force sensing elements are identically equal in magnitude but opposite in sense.

    Abstract translation: 一种用于单片力传感器的装置和方法，其中感测的力仅施加在一对力感测元件的两端上，使得一对力感测元件与压缩装置中的一对力被加载，另一个在张力下被加载，由此 两个力感测元件中的每一个感测到的力在大小上是相同的，但在意义上是相反的。

    Sensor
    48.
    发明授权
    Sensor 有权
    传感器

    公开(公告)号：US06584864B2

    公开(公告)日：2003-07-01

    申请号：US10183225

    申请日：2002-06-26

    Applicant: John Christopher Greenwood

    Inventor： John Christopher Greenwood

    IPC: G01L110

    CPC classification number: G01P15/123 ,  G01L1/106 ,  G01L1/183 ,  G01L9/0016 ,  G01L9/0019 ,  G01P15/097

    Abstract: A resonant sensor comprises a support structure comprising two support points; a laminar resonator suspended between said two support points of said support structure and comprising a plurality of substantially parallel flexural members which are responsive to relative movement of said support points; means for exciting said resonator into a balanced mode of oscillation and means for sensing motion of said resonator. Said means for sensing motion of said resonator is or are spaced from, and linked to, said flexible area of said resonator by means of levers. Said support points are preferably adapted to move relative to each other in response to a difference in pressure, force or acceleration.

    Abstract translation: 谐振传感器包括包括两个支撑点的支撑结构; 悬挂在所述支撑结构的所述两个支撑点之间的层状谐振器，并且包括响应于所述支撑点的相对运动的多个基本平行的弯曲构件; 用于将所述谐振器激发成平衡振荡模式的装置和用于感测所述谐振器的运动的装置。用于感测所述谐振器的运动的所述装置借助于杠杆与所述谐振器的所述柔性区域间隔开并与所述谐振器连接。 支撑点优选地适于响应于压力，力或加速度的差异而相对于彼此移动。

    Transducer having a resonating silicon beam and method for forming same
    50.
    发明授权
    Transducer having a resonating silicon beam and method for forming same 失效
    具有谐振硅光束的传感器及其形成方法

    公开(公告)号：US6118164A

    公开(公告)日：2000-09-12

    申请号：US935210

    申请日：1997-09-22

    Applicant: James D. Seefeldt ,  Michael F. Mattes

    Inventor： James D. Seefeldt ,  Michael F. Mattes

    IPC: G01L1/10 ,  G01L1/18 ,  G01L9/00 ,  G01P15/08 ,  H01L29/84 ,  H01L21/00 ,  H01L21/76

    CPC classification number: G01P15/0802 ,  G01L1/183 ,  G01L9/0019 ,  G01L9/0045

    Abstract: A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.

    Abstract translation: 一种形成装置的方法，包括在具有上表面的硅衬底上的力换能器，所述硅衬底包括n型或p型中的一种的掺杂剂，所述力换能器包括具有间隔开的端壁的空腔和梁 支撑在空腔中，所述光束在所述腔的端壁之间延伸，所述方法包括以下步骤：（a）在所述衬底中注入所述n型或p型之一的掺杂剂层; （b）在所述衬底的上表面上沉积外延层，所述外延层包括所述n型或p型中的另一个的掺杂剂; （c）通过所述外延层注入一对间隔的沉降片并与所述层电连接，所述沉降片中的每一个包括所述n型或p型之一的掺杂剂; （d）阳极氧化所述衬底以形成所述沉降片和所述层的多孔硅; （e）氧化多孔硅以形成二氧化硅; 和（f）蚀刻二氧化硅以形成腔和束。

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