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    C V D Diamond radiation detector
    51.
    发明公开
    C V D Diamond radiation detector 无效
    Strahlungsdetektor aus CVD-Diamant。

    公开(公告)号：EP0635584A1

    公开(公告)日：1995-01-25

    申请号：EP94202040.5

    申请日：1994-07-14

    Applicant: Saint-Gobain/Norton Industrial Ceramics Corporation

    Inventor： Lu, Grant ,  Cann, Gordon L.

    IPC: C23C16/26 ,  C30B25/02 ,  C30B29/04 ,  G01T1/26

    CPC classification number: C23C16/276 ,  C23C16/27 ,  G01T1/26 ,  Y10T428/30

    Abstract: The process is an arc jet CVD diamond deposition process with very low methane, less than 0.07%, and the addition of water. The resulting material has is characterized by a narrow Raman peak, a relatively large lattice constant, and a charge carrier collection distance of at least 25 microns.
    Also disclosed is a particle detector device which makes use of the diamond material according to the invention.

    Abstract translation: 该方法是具有非常低的甲烷，小于0.07％和加入水的电弧喷射CVD金刚石沉积方法。 所得材料的特征在于窄拉曼峰，相对大的晶格常数和至少25微米的电荷载体收集距离。 还公开了使用根据本发明的金刚石材料的颗粒检测器装置。

    Diffusion furnace boat assembly and wafer support
    52.
    发明公开
    Diffusion furnace boat assembly and wafer support 失效
    SchiffchenhalteraufbaufürDiffusionsofen und Waferhalteeinrichtung。

    公开(公告)号：EP0600516A1

    公开(公告)日：1994-06-08

    申请号：EP93119553.1

    申请日：1993-12-03

    Applicant: Saint-Gobain/Norton Industrial Ceramics Corporation

    Inventor： Proia, Stephen E. ,  Foster, Bryan D.

    IPC: C23C16/44

    CPC classification number: C23C16/4583

    Abstract: Described is a vertical rack or boat assembly for supporting and carrying semi-conductor material wafers in a vertical diffusion furnace, the assembly being made up of a rack or boat (1) and wafer support rings (5) which fit into the boat (1).

    Abstract translation: 描述了用于在垂直扩散炉中支撑和携带半导体材料晶片的立式机架或船组件，该组件由机架或船（1）和装配到船（1）中的晶片支撑环（5）组成 ）。

    Scintillation crystals having reduced afterglow and method of making the same
    55.
    发明公开
    Scintillation crystals having reduced afterglow and method of making the same 失效
    Szintillationskristalle mit reduzierter Nachleuchtzeit und Verfahren zu deren Herstellung

    公开(公告)号：EP0795631A1

    公开(公告)日：1997-09-17

    申请号：EP97200411.3

    申请日：1997-02-13

    Applicant: Saint-Gobain/Norton Industrial Ceramics Corporation

    Inventor： Murphy, Harold J. ,  Novak, William P. ,  Rybicki, Alan F.

    IPC: C30B15/00

    CPC classification number: C30B15/00 ,  C30B29/32

    Abstract: Methods of making a scintillation crystal having reduced afterglow include preparing a crystal melt according to the Czochralsky technique and doping the melt with an element or a compound which reduces afterglow without significantly reducing the luminescence light output of the crystal grown in the melt. Experiments have shown that doping the melt with any one of calcium, cobalt, germanium, niobium, sodium, and chromium significantly reduces afterglow without unduly reducing the luminescence light output of the crystal. The presently preferred dopant is cobalt, which is added to the melt in concentrations of approximately 10ppm to 50ppm. Crystals made according to the method of the invention exhibit significantly less afterglow than crystals made from the same raw materials without doping. By choice of the proper concentration of dopant, the light output of the crystal during luminescence is not adversely affected.

    Abstract translation: 制造具有减少的余辉的闪烁晶体的方法包括根据切克劳斯基技术制备晶体熔体，并用减少余辉的元素或化合物掺杂熔体，而不显着降低在熔体中生长的晶体的发光光输出。 实验表明，用钙，钴，锗，铌，钠和铬中的任何一种掺杂熔体显着减少余辉，而不会不适当地降低晶体的发光光输出。 目前优选的掺杂剂是钴，其以约10ppm至50ppm的浓度加入到熔体中。 根据本发明的方法制备的晶体与没有掺杂的相同原料制成的晶体相比，显示出明显更少的余辉。 通过选择适当的掺杂剂浓度，在发光期间晶体的光输出不会受到不利影响。

    CRYOLITE RESISTANT REFRACTORY
    56.
    发明公开
    CRYOLITE RESISTANT REFRACTORY 失效
    反对冰晶石耐磨，防火材料

    公开(公告)号：EP0783468A1

    公开(公告)日：1997-07-16

    申请号：EP95933914.0

    申请日：1995-09-25

    Applicant: Saint-Gobain/Norton Industrial Ceramics Corporation

    Inventor： CORTELLINI, Edmund, A.

    IPC: C04B35 ,  C25C3

    CPC classification number: C04B35/6303 ,  C04B35/6316 ,  C04B35/66 ,  C04B2235/3463 ,  C25C3/085

    Abstract: In a Hall-Heroult cell for aluminum production, a cryolite-resistant liner comprising: a) between about 75 weight percent w/o and about 95 w/o alumina-silica refractory grain, and b) between about 2 w/o and about 10 w/o of a sealant selected from the group consisting of zinc borate; sulfur; R1 Al/x/2 Siy/2 Oz/2, R2(OH)2, R2CO3, R2SO4: 2H2O, and R2SiO3; wherein: i) R1 is selected from the group consisting of Na, K, and Li, and mixtures thereof, ii) x, y and z are integers between 1 and 16, inclusive, and iii) R2 is selected from the group consisting of Ca, Sr and Mg.

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