公开(公告)号：US20220196911A1

公开(公告)日：2022-06-23

申请号：US17539474

申请日：2021-12-01

Applicant: Skorpios Technologies, Inc.

Inventor： Paveen Apiratikul ,  Damien Lambert

IPC: G02B6/12 ,  G02B6/136

Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

公开(公告)号：US11249253B2

公开(公告)日：2022-02-15

申请号：US16239811

申请日：2019-01-04

Applicant: Skorpios Technologies, Inc.

Inventor： John Dallesasse ,  Stephen B. Krasulick

IPC: G02B6/38 ,  G02B6/00 ,  G02B6/27 ,  G02B6/26 ,  G02B5/30 ,  G02B6/126 ,  G02B6/10 ,  G02F1/00 ,  G02F1/09 ,  G02B6/12

Abstract: Photonic rotators integrated on a substrate are disclosed for manipulating light polarization.

公开(公告)号：US20210116636A1

公开(公告)日：2021-04-22

申请号：US16914156

申请日：2020-06-26

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: G02B6/12 ,  H01S5/02326 ,  G02B6/122 ,  G02B6/136 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40 ,  H04B10/50 ,  H04J14/02

Abstract: A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

公开(公告)号：US20200301072A1

公开(公告)日：2020-09-24

申请号：US16777727

申请日：2020-01-30

Applicant: Skorpios Technologies, Inc.

Inventor： Majid Sodagar ,  Paveen Apiratikul

IPC: G02B6/122 ,  G02B6/136

Abstract: A method is provided for forming an optical device having a waveguide and a spot size converter (SSC). The method includes providing a crystalline semiconductor region and a non-crystalline semiconductor region on a substrate. The crystalline semiconductor region is coupled to the non-crystalline semiconductor region. The method also includes simultaneously etching the non-crystalline semiconductor region and the crystalline semiconductor region using a same etch mask to form a spot size converter coupled a waveguide. The waveguide has a ridge over a shoulder, and the spot size converter has a ridge over a shoulder.

公开(公告)号：US10732349B2

公开(公告)日：2020-08-04

申请号：US15426375

申请日：2017-02-07

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/02 ,  G02B6/12 ,  H01S5/022 ,  G02B6/122 ,  G02B6/136 ,  H01S5/026 ,  H01S5/028 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40 ,  H04B10/50 ,  H04J14/02

Abstract: A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

公开(公告)号：US20200233150A1

公开(公告)日：2020-07-23

申请号：US16690483

申请日：2019-11-21

Applicant: Skorpios Technologies, Inc.

Inventor： Paveen Apiratikul ,  Damien Lambert

IPC: G02B6/12 ,  G02B6/136

Abstract: An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.

公开(公告)号：US20200152615A1

公开(公告)日：2020-05-14

申请号：US16452212

申请日：2019-06-25

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse

IPC: H01L25/16 ,  H01L25/00 ,  H01S5/022 ,  H01S5/10 ,  H01L25/075 ,  G02B6/136 ,  G02B6/12 ,  G02B6/122

Abstract: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

公开(公告)号：US10345521B2

公开(公告)日：2019-07-09

申请号：US15980536

申请日：2018-05-15

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/14 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/12

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US10330871B2

公开(公告)日：2019-06-25

申请号：US14996001

申请日：2016-01-14

Applicant: Skorpios Technologies, Inc.

Inventor： Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  Derek Van Orden ,  Stephen B. Krasulick

IPC: G02B6/42 ,  G02B6/28 ,  G02B6/122 ,  G02B6/14 ,  G02B6/26 ,  H01S5/026 ,  H01S5/30 ,  G02B6/12

Abstract: A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

公开(公告)号：US20190170944A1

公开(公告)日：2019-06-06

申请号：US16171132

申请日：2018-10-25

Applicant: Skorpios Technologies, Inc.

Inventor： Majid Sodagar ,  Stephen B. Krasulick ,  John Zyskind ,  Paveen Apiratikul ,  Luca Cafiero

IPC: G02B6/30

Abstract: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.