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    OPTICAL INTERCONNECT
    51.
    发明申请
    OPTICAL INTERCONNECT 审中-公开
    光学互联

    公开(公告)号：WO2009142646A1

    公开(公告)日：2009-11-26

    申请号：PCT/US2008/064761

    申请日：2008-05-23

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  FATTAL, David, A. ,  STEWART, Duncan ,  WU, Wei

    Inventor： FATTAL, David, A. ,  STEWART, Duncan ,  WU, Wei

    IPC: G02B6/26

    CPC classification number: G02B6/34 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/29311 ,  G02B6/29334 ,  G02B6/43

    Abstract: An optical interconnect has first (101) and second (103) substantially perpendicular optical waveguides and an optical grating (105) disposed between and evanescently coupled to the waveguides (101, 103). The optical grating (105) includes a plurality perforated rows (107) that are oriented at an angle of approximately 45 degrees with respect to the first (101) and second (103) optical waveguides.

    Abstract translation: 光学互连具有第一（101）和第二（103）基本上垂直的光波导和设置在波导（101,103）之间并且ev逝地耦合到波导（101,103）的光栅（105）。 光栅（105）包括相对于第一（101）和第二（103）光波导以大约45度的角度定向的多个穿孔列（107）。

    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY
    56.
    发明申请
    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
    补偿联系人LITHOGRAPHY的失败

    公开(公告)号：WO2008013778A3

    公开(公告)日：2008-05-08

    申请号：PCT/US2007016580

    申请日：2007-07-24

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  WU WEI ,  STEWART DUNCAN ,  WANG SHIH-YUAN ,  WILLIAMS R STANLEY

    Inventor： WU WEI ,  STEWART DUNCAN ,  WANG SHIH-YUAN ,  WILLIAMS R STANLEY

    IPC: G03F7/00 ,  B29C59/02

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).

    Abstract translation: 接触光刻的方法包括预测在接触光刻过程期间将图案从模具（110）转移到衬底（130）时可能发生的变形;以及修改模具（110）以补偿变形。 接触光刻系统包括设计子系统（210），其被配置为生成描述光刻图案的数据：分析子系统（220），其被配置为识别当使用由所述数据创建的模具（110）时可能发生的一个或多个失真; 以及模具修改子系统（230），其被配置为修改所述数据以补偿由所述分析子系统（220）识别的所述一个或多个失真。

    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY
    57.
    发明申请
    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
    补偿接触光刻中的失真

    公开(公告)号：WO2008013778A2

    公开(公告)日：2008-01-31

    申请号：PCT/US2007/016580

    申请日：2007-07-24

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  WU, Wei ,  STEWART, Duncan ,  WANG, Shih-Yuan ,  WILLIAMS, R., Stanley

    Inventor： WU, Wei ,  STEWART, Duncan ,  WANG, Shih-Yuan ,  WILLIAMS, R., Stanley

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).

    Abstract translation: 接触光刻的方法包括预测在接触光刻过程中将图案从模具（110）转印到基板（130）时可能发生的扭曲：以及修改模具（110）以补偿 为扭曲。 一种接触光刻系统包括被配置为产生描述光刻图案的数据的设计子系统（210）：分析子系统（220），其被配置为识别在使用从数据创建的模具（110）时可能发生的一个或多个失真; 和模具修改子系统（230），其被配置为修改数据以补偿由分析子系统（220）识别的一个或多个失真。

    GENERATING MULTIPLE BANDGAPS USING MULTIPLE EPITAXIAL LAYERS
    58.
    发明申请
    GENERATING MULTIPLE BANDGAPS USING MULTIPLE EPITAXIAL LAYERS 审中-公开
    使用多个外延层产生多个带

    公开(公告)号：WO2005062079A2

    公开(公告)日：2005-07-07

    申请号：PCT/GB2004/005452

    申请日：2004-12-24

    Applicant: INTENSE LIMITED ,  YANSON, Dan, Andreyevitch ,  BACCHIN, Gianluca ,  KOWALSKI, Olek, Peter ,  MCDOUGALL, Stewart, Duncan

    Inventor： YANSON, Dan, Andreyevitch ,  BACCHIN, Gianluca ,  KOWALSKI, Olek, Peter ,  MCDOUGALL, Stewart, Duncan

    IPC: G02B

    CPC classification number: H01L21/182

    Abstract: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; and applying an intermixing agent to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps in the quantum well in each of the respective regions.

    Abstract translation: 用于在光学半导体器件的形成期间修改能带隙的量子阱混合（QWI）技术使得能够对QWI工艺进行空间控制，从而实现晶片，器件或衬底表面上的不同带隙位移 。 该方法包括：形成包括限定至少一个量子阱的一个或多个核心层的衬底; 在量子阱上沉积一系列混合阻挡层，每个连续的混合阻挡层由半导体材料形成并且具有与之前紧邻的阻挡层不同的蚀刻特性; 在衬底的不同区域中蚀刻掉不同数量的连续阻挡层，以便在衬底的不同区域中提供不同数量的阻挡层的总厚度; 以及向基底表面施加混合剂，使得量子阱区域中的混合程度作为阻挡层总厚度的函数而变化，由此在各个区域中的每个区域中的量子阱中形成不同的带隙。 / p>

    METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS
    60.
    发明申请
    METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
    制造光学器件的方法和相关改进

    公开(公告)号：WO2002059952A2

    公开(公告)日：2002-08-01

    申请号：PCT/GB2002/000292

    申请日：2002-01-23

    Applicant: THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW ,  HAMILTON, Craig, James ,  KOWALSKI, Olek, Peter ,  MARSH, John, Haig ,  MCDOUGALL, Stewart, Duncan

    Inventor： HAMILTON, Craig, James ,  KOWALSKI, Olek, Peter ,  MARSH, John, Haig ,  MCDOUGALL, Stewart, Duncan

    IPC: H01L21/18

    CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

    Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise "point" defects.

    Abstract translation: 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件本体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入器件本体的部分（53） 邻近电介质层（51）的部分（5）。 结构缺陷基本上包括“点”缺陷。

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