公开(公告)号：WO2015191656A1

公开(公告)日：2015-12-17

申请号：PCT/US2015/035004

申请日：2015-06-10

Applicant: SUNEDISON, INC.

Inventor： TOMAR, Vivek ,  GUPTA, Puneet ,  BHUSARAPU, Satish

IPC: H05B6/06 ,  B01J8/18 ,  C01B33/027 ,  H05B6/10 ,  H05B6/40

CPC classification number: B01D9/00 ,  B01J8/0005 ,  B01J8/1818 ,  B01J8/1836 ,  B01J19/088 ,  B01J2208/00433 ,  B01J2208/00469 ,  B01J2208/00495 ,  B01J2208/0053 ,  B01J2219/0809 ,  C01B33/027 ,  H05B6/02 ,  H05B6/06 ,  H05B6/108 ,  H05B6/40

Abstract: A system for the production of a polycrystalline silicon product is disclosed. The system includes a reaction chamber, a susceptor, an induction unit, and a plurality of energy sources. The reaction chamber has a reactor wall, and the susceptor encircles the reactor wall. The induction heater surrounds the susceptor, and has multiple induction coils for producing heat in the susceptor. The coils are grouped into a plurality of zones. The plurality of energy sources supply electric current to the coils. Each energy source is connected with the coils of at least one zone.

Abstract translation: 公开了一种用于生产多晶硅产品的系统。 该系统包括反应室，感受体，感应单元和多个能量源。 反应室具有反应器壁，并且基座围绕反应器壁。 感应加热器围绕基座，并具有多个感应线圈，用于在基座中产生热量。 线圈被分组成多个区域。 多个能量源向线圈提供电流。 每个能量源与至少一个区域的线圈连接。

公开(公告)号：WO2014100487A3

公开(公告)日：2015-03-05

申请号：PCT/US2013076708

申请日：2013-12-19

Applicant: SUNEDISON INC

Inventor： PHILLIPS RICHARD J ,  RATHOD SHAILENDRA B

IPC: C03C27/06

CPC classification number: C30B15/12 ,  C03B23/20 ,  C03C27/06 ,  C03C2217/213 ,  C30B15/002 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1052

Abstract: A method of bonding a first silica part to a second silica part includes coating contacting surfaces of the first and second silica parts with a solution having one of silica and silica precursors. The coated surfaces of the first silica part are placed adjacent to the coated surfaces of the second silica part to form an assembly, and the assembly is heated, a crucible for use in directional solidification of multicrystalline ingots comprising a base, a sidewall and a weir, a system for growing a single crystal ingot comprising a crucible having a base, a sidewall, a weir, a heater and a feed tube, and a method for growing a single crystal ingot from a crucible havng a base and a sidewall and a weir comprising placing a feedstock material into the crucible, melting the feedstock material, lowering a seed cyrstal into the melt and pulling the seed crystal from the melt to pull an ingot.

Abstract translation: 将第一二氧化硅部分结合到第二二氧化硅部分的方法包括第一和第二二氧化硅部分的涂层接触表面与具有二氧化硅和二氧化硅前体之一的溶液。 第一二氧化硅部分的涂覆表面被放置成与第二二氧化硅部分的涂覆表面相邻以形成组件，并且组件被加热，坩埚用于多晶锭的定向凝固，所述多晶锭包括基体，侧壁和堰 ，用于生长单晶锭的系统，其包括具有基底，侧壁，堰，加热器和进料管的坩埚，以及用于从具有基部和侧壁的坩埚和堰的生长单晶锭的方法 包括将原料材料放入坩埚中，熔化原料，将晶体降低成熔体并将晶种从熔体中拉出以拉出晶锭。

公开(公告)号：WO2014152510A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/027418

申请日：2014-03-14

Applicant: SUNEDISON, INC.

Inventor： LIU, Qingmin ,  LIBBERT, Jeffrey Louis

IPC: H01L21/762

CPC classification number: H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3226 ,  H01L21/76254

Abstract: A method for reducing light point defects of a semiconductor-on-insulator structure and a method for reducing the surface roughness of a semiconductor-on-insulator structure are disclosed. The methods can include a combination of thermally annealing the structure followed by a non-contact smoothing process.

Abstract translation: 公开了一种用于减少绝缘体上半导体结构的光点缺陷的方法和用于降低绝缘体上半导体结构的表面粗糙度的方法。 该方法可以包括对退火结构进行非接触平滑处理的组合。

公开(公告)号：WO2014106177A1

公开(公告)日：2014-07-03

申请号：PCT/US2013/078295

申请日：2013-12-30

Applicant: SUNEDISON, INC.

Inventor： FALSTER, Robert J. ,  VORONKOV, Vladimir V. ,  PITNEY, John A. ,  ALBRECHT, Peter D.

IPC: H01L21/02 ,  H01L21/322 ,  H01L21/463 ,  H01L21/687

CPC classification number: H01L21/322 ,  C30B25/12 ,  H01L21/302 ,  H01L21/68735 ,  H01L21/6875

Abstract: Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

Abstract translation: 公开了用于制备具有减小的应变的异质结构的装置和方法。 异质结构可以包括符合具有与结构不同的晶格的表面层的半导体结构，以形成相对低缺陷的异质结构。

公开(公告)号：WO2014106155A2

公开(公告)日：2014-07-03

申请号：PCT/US2013/078224

申请日：2013-12-30

Applicant: SUNEDISON, INC.

Inventor： FALSTER, Robert J. ,  VORONKOV, Vladimir V. ,  PITNEY, John, A. ,  ALBRECHT, Peter D.

IPC: H01L21/02

CPC classification number: H01L21/322 ,  C30B25/12 ,  H01L21/302 ,  H01L21/68735 ,  H01L21/6875

Abstract: Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure.

Abstract translation: 公开了用于制备具有减小的应变的异质结构的装置和方法。 异质结构可以包括符合具有与结构不同的晶格的表面层的半导体结构，以形成相对低缺陷的异质结构。

公开(公告)号：WO2014055752A1

公开(公告)日：2014-04-10

申请号：PCT/US2013/063248

申请日：2013-10-03

Applicant: SUNEDISON, INC.

Inventor： KWESKIN, Sasha J. ,  SHIVE, Larry W.

IPC: H01L21/02

CPC classification number: H01L21/02054 ,  H01L21/02024 ,  H01L21/02052

Abstract: A method is provided for cleaning a surface of a semiconductor wafer comprising: (a) contacting the front surface of the wafer with a slurry comprising an abrasive agent and a polymeric rheological modifier; (b) contacting the front surface of the semiconductor wafer with an oxidant; and (c) irradiating the front surface of the semiconductor wafer with ultraviolet light.

Abstract translation: 提供了一种用于清洁半导体晶片的表面的方法，包括：（a）使晶片的前表面与包含研磨剂和聚合物流变改性剂的浆料接触; （b）使半导体晶片的前表面与氧化剂接触; 和（c）用紫外线照射半导体晶片的前表面。

公开(公告)号：US10221500B2

公开(公告)日：2019-03-05

申请号：US15398407

申请日：2017-01-04

Applicant: SunEdison, Inc.

Inventor： Salvador Zepeda ,  Richard J. Phillips ,  Christopher Vaughn Luers ,  Steven Lawrence Kimbel ,  Harold W. Korb ,  John D. Holder ,  Carissima Marie Hudson ,  Hariprasad Sreedharamurthy ,  Stephan Haringer ,  Marco Zardoni

IPC: C30B15/12 ,  C30B15/20 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

公开(公告)号：US10145023B2

公开(公告)日：2018-12-04

申请号：US14802712

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Tirumani N. Swaminathan ,  Jihong Chen

IPC: C30B15/04 ,  C30B15/00 ,  C30B15/02 ,  C30B27/02 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

公开(公告)号：US20180241341A1

公开(公告)日：2018-08-23

申请号：US15509939

申请日：2015-09-09

Applicant: Christopher NEEDHAM ,  SUNEDISON, INC.

Inventor： Christopher Thomas Needham ,  Bharat Malapareddy ,  Anurag Mapati ,  Manickam Narayanan ,  Rajesh Manapat ,  Nagendra Srinivas Cherukupalli

IPC: H02S20/23 ,  H02S20/24 ,  F24S25/12 ,  F24S25/20 ,  F24S25/60 ,  F24S25/61 ,  F24S25/615

CPC classification number: H02S20/23 ,  F24S25/12 ,  F24S25/20 ,  F24S25/60 ,  F24S25/61 ,  F24S25/615 ,  F24S2025/601 ,  H02S20/24 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47

Abstract: A solar assembly (200) includes a solar module (100) including a solar laminate (102) mounted within a frame (104) that circumscribes the solar laminate. The solar assembly also includes a mount (202) supporting the solar module including a first end and an opposing second end, wherein the first end is attached to the solar module. The solar assembly further includes a structural adhesive compound (210) and a mounting surface (230). The structural adhesive compound is positioned between the mount second end and the mounting surface to facilitate bonding the mount to the mounting surface.

公开(公告)号：US09527752B2

公开(公告)日：2016-12-27

申请号：US13751294

申请日：2013-01-28

Applicant: SunEdison, Inc.

Inventor： Puneet Gupta ,  Satish Bhusarapu

IPC: C01F7/50 ,  C01B33/107

CPC classification number: C01F7/50 ,  C01B33/10705

Abstract: Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.